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    • 71. 发明授权
    • Thin film transistor array substrate and method of manufacturing the same
    • 薄膜晶体管阵列基板及其制造方法
    • US07202500B2
    • 2007-04-10
    • US10958264
    • 2004-10-06
    • Soon Sung YooHeung Lyul Cho
    • Soon Sung YooHeung Lyul Cho
    • H01L29/04
    • H01L27/1248H01L27/124H01L27/1255H01L29/458
    • A thin film transistor array substrate includes a gate pattern on a substrate. The gate pattern includes a gate electrode, a gate line connected to the gate electrode, and a lower gate pad electrode connected to the gate line. A source/drain pattern includes a source electrode and a drain electrode, a data line connected to the source electrode, and a lower data pad electrode connected to the data line. A semiconductor pattern is formed beneath the source/drain pattern. A transparent electrode pattern includes a pixel electrode connected to the drain electrode, an upper gate pad electrode connected to the lower gate pad electrode, and an upper data pad electrode connected to the lower data pad electrode. The thin film array substrate further includes a gate insulating pattern and a passivation film pattern stacked at remaining areas excluding areas within which the transparent electrode pattern is formed.
    • 薄膜晶体管阵列基板在基板上包括栅极图案。 栅极图案包括栅电极,连接到栅电极的栅极线和连接到栅极线的下栅极焊盘电极。 源极/漏极图案包括源电极和漏电极,连接到源电极的数据线和连接到数据线的下数据焊盘电极。 在源极/漏极图案之下形成半导体图案。 透明电极图案包括连接到漏电极的像素电极,连接到下栅极焊盘电极的上栅极焊盘电极和连接到下数据焊盘电极的上数据焊盘电极。 薄膜阵列基板还包括层叠在除了形成透明电极图案的区域之外的其余区域的栅极绝缘图案和钝化膜图案。
    • 72. 发明申请
    • Thin film transistor substrate using a horizontal electric field
    • 薄膜晶体管基板采用水平电场
    • US20070029551A1
    • 2007-02-08
    • US11544748
    • 2006-10-10
    • Soon Sung YooOh Nam KwonHeung Lyul Cho
    • Soon Sung YooOh Nam KwonHeung Lyul Cho
    • H01L29/04
    • G02F1/13458G02F1/134363H01L27/124H01L27/1288H01L29/66765
    • A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a first common line formed on the substrate parallel to each other from a first conductive layer; a gate insulating film formed on the substrate, the gate line, and the first common line; a data line formed from a second conductive layer on the gate insulating film crossing the gate line and the common line with the gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed from a third conductive layer connected to the common line through a hole passing through the protective film and the gate insulating film; and a pixel electrode formed from the second conductive layer connected to the thin film transistor to define a horizontal electric field between the pixel electrode and the common electrode.
    • 用于使用水平电场的薄膜晶体管衬底结构包括:衬底; 形成在所述基板上的栅极线和第一公共线从第一导电层彼此平行; 形成在基板上的栅极绝缘膜,栅极线和第一公共线; 由栅极绝缘膜上的与栅极线交叉的第二导电层和与其间的栅极绝缘膜的公共线形成的数据线,以限定像素区域; 连接到栅极线和数据线的薄膜晶体管; 覆盖数据线和薄膜晶体管的保护膜; 由通过穿过保护膜的孔和栅极绝缘膜连接到公共线的第三导电层形成的公共电极; 以及由连接到薄膜晶体管的第二导电层形成的像素电极,以在像素电极和公共电极之间限定水平电场。
    • 76. 发明授权
    • Liquid crystal display device and method for fabricating the same
    • 液晶显示装置及其制造方法
    • US06580474B1
    • 2003-06-17
    • US09657507
    • 2000-09-08
    • Byung Chul AhnByung Ho LimSoon Sung YooYong Wan KimYoung Hun Ha
    • Byung Chul AhnByung Ho LimSoon Sung YooYong Wan KimYoung Hun Ha
    • G02F1136
    • G02F1/136213G02F2001/136231
    • A liquid crystal display device and a method of fabricating the same are disclosed. The device, as disclosed, reduces the number of masks required for fabrication. Thus, cost is reduced and yield is increased. The device includes a plurality of gate lines, a plurality of data lines crossing the gate lines such that active regions are defined near the crossover points, thin film transistors are formed near the active regions, and a plurality of pixel electrodes are formed within regions defined by the adjacent gate and data lines. Also, pixel electrodes overlap gate lines and the two electrodes function as a storage capacitor. A fabrication method includes forming a gate line; forming a data line region, protection layers, and an active area where drain and source electrodes are spaced apart at a predetermined distance; forming a data line, a gate line protection layer, and a gate insulating layer; and forming pixel electrodes by depositing a transparent conductive material, such that each pixel electrode also overlaps a portion of a gate line.
    • 公开了一种液晶显示装置及其制造方法。 所公开的装置减少了制造所需的掩模的数量。 因此,成本降低并且产量增加。 该器件包括多条栅极线,与栅极线交叉的多条数据线,使得在交叉点附近限定有源区,在有源区附近形成薄膜晶体管,并且在限定的区域内形成多个像素电极 通过相邻的门和数据线。 此外,像素电极与栅极线重叠,并且两个电极用作存储电容器。 制造方法包括形成栅极线; 形成数据线区域,保护层以及漏极和源电极以预定距离间隔开的有源区域; 形成数据线,栅极线保护层和栅极绝缘层; 以及通过沉积透明导电材料形成像素电极,使得每个像素电极也与栅极线的一部分重叠。