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71. 发明授权

US07005672B2 Thin film transistor with a semiconductor layer that includes a gelable self-organizable polymer 有权
标题翻译：具有半导体层的薄膜晶体管，其包括可凝胶化的可自组织聚合物
公开(公告)号：US07005672B2
公开(公告)日：2006-02-28
申请号：US10720597
申请日：2003-11-24
申请人： Yiliang Wu , Ping Liu , Beng S. Ong , Dasarao K. Murti
发明人： Yiliang Wu , Ping Liu , Beng S. Ong , Dasarao K. Murti
IPC分类号： H01L29/786 , H01L51/00
CPC分类号： H01L51/0545 , C08G61/02 , C08G61/126 , H01L51/0003 , H01L51/0007 , H01L51/0012 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/052 , H01L51/0525 , H01L51/0541
摘要： A thin film transistor including: an insulating layer; a gate electrode; a semiconductor layer including coalesced structurally ordered polymer aggregates of a self-organizable polymer, wherein the self-organizable polymer is of a type capable of gelling; a source electrode; and a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer.
摘要翻译：一种薄膜晶体管，包括：绝缘层; 栅电极; 包含可自组织聚合物的结合有序的聚合物聚集体的半导体层，其中所述自组织聚合物是能够凝胶化的类型; 源电极; 和漏电极，其中绝缘层，栅极电极，半导体层，源电极和漏极电极只要栅电极和半导体层都接触绝缘层，并且源电极并且漏电极都接触半导体层。

72. 发明授权

US06309785B1 Imaging members 有权
标题翻译：成像成员
公开(公告)号：US06309785B1
公开(公告)日：2001-10-30
申请号：US09698042
申请日：2000-10-30
申请人： Yu Qi , Beng S. Ong , Ping Liu , C. Geoffrey Allen
发明人： Yu Qi , Beng S. Ong , Ping Liu , C. Geoffrey Allen
IPC分类号： G03G5087
CPC分类号： G03G5/14765 , G03G5/0564 , G03G5/0571 , G03G5/075 , G03G5/076
摘要： A photoconductive imaging member includes a photogenerating layer and a charge transport layer, wherein the charge transport layer contains charge transport components and a poly(imide-carbonate) binder of general structure (I) or general structure(II): where A, B, and E are divalent linkages; D is a trivalent linkage in (I) and a tetravalent linkage in (II); and x and y are the mole fractions of the repeating units such that x+y is equal to 1. The poly(imide carbonates)s can be made by interfacial polycondensation of bischloroformate, bis(imidephenol) and bisphenol.
摘要翻译：光导成像构件包括光生成层和电荷输送层，其中电荷输送层包含电荷传输组分和通式（I）或通式（II）的聚（酰亚胺 - 碳酸酯）粘合剂：其中A，B，和E是二价键; D是（I）中的三价键和（II）中的四价键; 并且x和y是重复单元的摩尔分数，使得x + y等于1.聚（酰亚胺碳酸酯）可以通过双氯甲酸酯，双（亚氨基苯酚）和双酚的界面缩聚来制备。

73. 发明授权

US06277535B1 Undercoating layer for imaging member 有权
标题翻译：成像构件的底漆层
公开(公告)号：US06277535B1
公开(公告)日：2001-08-21
申请号：US09549612
申请日：2000-04-14
申请人： Ping Liu , Yu Qi , Beng S. Ong , Cheng-Kuo Hsiao , Helen R. Cherniack , Huoy-Jen Yuh
发明人： Ping Liu , Yu Qi , Beng S. Ong , Cheng-Kuo Hsiao , Helen R. Cherniack , Huoy-Jen Yuh
IPC分类号： G03G514
CPC分类号： G03G5/142
摘要： An electrophotographic imaging member includes a supporting substrate, an undercoating layer, an optional adhesive layer, a photogenerating layer, and a charge transporting layer. The undercoating layer is derived from the reaction of a silyl-functionalyzed polymer (III) with a silane coupling agent (I) and an optional silane coupling agent (II): (RO)3Si—A—Si(OR)3 (I) where R is alkyl, substituted alkyl, aryl, or substituted aryl, acyl, and the like; A is selected from alkylene, arylene, and alkylenearyl; X is alkyl, substituted alkyl, aryl, or substituted aryl; R1, R2, and R3 are independently selected from alkyl aryl, alkoxy, aryloxy, acyloxy, halide, cyano, amino, and the like; R4, R5, and R6 are hydrogen and alkyl; Z is selected from chloride, bromide, iodine, cyano, alkoxy, and acyloxy; B is preferably selected from halide, cyano, aryl, alkoxycarbonyl, aryloxycarbonyl and the like; D and E are preferably selected from alkyleneoxycarbonyl, arylene, alkylenearyl, aryleneoxycarbonyl, and alkylenearyloxycarbonyl; a, b, and c are the mole fractions of the repeating units of the polymer such that a+b+c=1.
摘要翻译：电子照相成像构件包括支撑基底，底涂层，任选的粘合剂层，光生成层和电荷输送层。底涂层衍生自甲硅烷基官能化聚合物（III）与硅烷偶联剂（I）和任选的硅烷偶联剂（II）的反应：其中R是烷基，取代的烷基，芳基或取代的芳基，酰基，等等; A选自亚烷基，亚芳基和亚烷基硬脂基; X是烷基，取代的烷基，芳基或取代的芳基; R 1，R 2和R 3独立地选自烷基芳基，烷氧基，芳氧基，酰氧基，卤素，氰基，氨基等; R4，R5和R6是氢和烷基; Z选自氯化物，溴化物，碘，氰基，烷氧基和酰氧基; B优选选自卤素，氰基，芳基，烷氧基羰基，芳氧基羰基等; D和E优选选自亚烷基氧基羰基，亚芳基，亚烷基硬脂基，亚芳基氧基羰基和亚烷基氧基羰基; a，b和c是聚合物的重复单元的摩尔分数，使得+ b + c = 1。

74. 发明授权

US06495300B1 Photoconductive imaging members 失效
标题翻译：光导成像构件
公开(公告)号：US06495300B1
公开(公告)日：2002-12-17
申请号：US09895453
申请日：2001-07-02
申请人： Yu Qi , Beng S. Ong , Cheng-Kuo Hsiao , Ping Liu , Huoy-Jen Yuh , John S. Chambers , Helen R. Cherniack
发明人： Yu Qi , Beng S. Ong , Cheng-Kuo Hsiao , Ping Liu , Huoy-Jen Yuh , John S. Chambers , Helen R. Cherniack
IPC分类号： G03G5047
CPC分类号： G03G5/14704 , G03G5/14734 , G03G5/14739 , G03G5/14773 , G03G5/14786
摘要： A photoconductive imaging member containing an optional supporting substrate, a photogenerating layer, a charge transport layer, and an overcoating layer comprised of a crosslinked composite polysiloxane-silica generated from the reaction of a silyl-functionalized hydroxyalkyl polymer of Formula (I) with an organosilane of Formula (II) in the presence of silica particles and water wherein A, B, D, and F represent the segments of the polymer backbone; E is a hole transporting moiety; X is selected from the group consisting of halide, cyano, alkoxy, acyloxy, and aryloxy; a, b, c, and d each represent mole fractions of the repeating monomer units such that the sum of a+b+c+d is equal to about 1; R is alkyl, substituted alkyl, aryl, or substituted aryl, and R1, R2, and R3 are independently selected from the group consisting of alkyl, aryl, alkoxy, aryloxy, acyloxy, halide, cyano, and amino, subject to the provision that two of R1, R2, and R3 are each independently selected from the group consisting of alkoxy, aryloxy, acyloxy, and halide.
摘要翻译：含有任选的支撑基底，光生成层，电荷输送层和外涂层的光导成像构件，其由通式（I）的甲硅烷基官能化羟烷基聚合物与有机硅烷反应生成的交联复合聚硅氧烷 - 二氧化硅在二氧化硅颗粒和水的存在下，式（II）中，A，B，D和F表示聚合物主链的链段; E是空穴传输部分; X选自卤素，氰基，烷氧基，酰氧基和芳氧基; a，b，c和d各自表示重复单体单元的摩尔分数，使得a + b + c + d的和等于约1; R是烷基，取代的烷基，芳基或取代的芳基，并且R 1，R 2和R 3独立地选自烷基，芳基，烷氧基，芳氧基，酰氧基，卤素，氰基和氨基，条件是 R 1，R 2和R 3中的两个各自独立地选自烷氧基，芳氧基，酰氧基和卤化物。

75. 发明授权

US08049205B2 Poly(alkynylthiophene)s and electronic devices generated therefrom 有权
标题翻译：聚（炔基噻吩）和由其生成的电子器件
公开(公告)号：US08049205B2
公开(公告)日：2011-11-01
申请号：US11398931
申请日：2006-04-06
申请人： Beng S. Ong , Yuning Li , Yiliang Wu
发明人： Beng S. Ong , Yuning Li , Yiliang Wu
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0036 , H01L51/0558
摘要： An electronic device comprising a semiconductive material of Formula (I) wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
摘要翻译：一种包含式（I）的半导体材料的电子器件，其中R是合适的烃或含杂原子的基团; n表示重复单元的数量。

76. 发明授权

US07994495B2 Organic thin film transistors 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07994495B2
公开(公告)日：2011-08-09
申请号：US12014884
申请日：2008-01-16
申请人： Yiliang Wu , Beng S. Ong
发明人： Yiliang Wu , Beng S. Ong
IPC分类号： H01L51/30
CPC分类号： H01L51/0529 , H01L21/02126 , H01L21/02211 , H01L21/02282 , H01L21/3122 , H01L51/0036 , H01L51/052 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.
摘要翻译：有机薄膜晶体管具有由嵌段共聚物形成的栅极电介质层。嵌段共聚物包括极性嵌段和非极性嵌段。所得的电介质层对栅电极具有良好的粘合性，并且与半导体层具有良好的相容性。

77. 发明授权

US07795373B2 Ethynylene acene polymers 有权
标题翻译：乙炔丙烯聚合物
公开(公告)号：US07795373B2
公开(公告)日：2010-09-14
申请号：US11399091
申请日：2006-04-06
申请人： Yuning Li , Beng S. Ong , Yiliang Wu
发明人： Yuning Li , Beng S. Ong , Yiliang Wu
IPC分类号： C08G75/00 , C08G65/00
CPC分类号： C08G61/126 , C08G61/02 , H01L51/0038 , H01L51/0043 , H01L51/0558
摘要： A polymer of Formula or structure (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteratom containing group, or a halogen; Ar and Ar′ represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.
摘要翻译：式（I）的聚合物，其中R 1和R 2中的至少一个是合适的烃，氢，含杂原子的基团或卤素; Ar和Ar'表示芳族部分; x，y，a，b，c，d，e，f和g分别表示基团或环的数目; n表示重复单元的数量。

78. 发明授权

US07705111B2 Poly(alkynylthiophene)s 有权
标题翻译：聚（炔基噻吩）
公开(公告)号：US07705111B2
公开(公告)日：2010-04-27
申请号：US11399246
申请日：2006-04-06
申请人： Beng S. Ong , Yuning Li , Yiliang Wu
发明人： Beng S. Ong , Yuning Li , Yiliang Wu
IPC分类号： C08G75/00
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0558
摘要： A polymer of the following formula wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
摘要翻译：下式的聚合物其中R是合适的烃或含杂原子的基团; n表示重复单元的数量。

79. 发明授权

US07586120B2 Ethynylene acene polymers and electronic devices generated therefrom 有权
标题翻译：乙炔聚合物和由其生成的电子器件
公开(公告)号：US07586120B2
公开(公告)日：2009-09-08
申请号：US11399169
申请日：2006-04-06
申请人： Yuning Li , Beng S. Ong , Yiliang Wu
发明人： Yuning Li , Beng S. Ong , Yiliang Wu
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0041 , H01L51/0541 , H01L51/0545
摘要： An electronic device comprising a polymer of Formula (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar and Ar′ represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.
摘要翻译：一种包含式（I）的聚合物的电子器件，其中R 1和R 2中的至少一个是合适的烃，氢，含杂原子的基团或卤素; Ar和Ar'表示芳族部分; x，y，a，b，c，d，e，f和g分别表示基团或环的数目; n表示重复单元的数量。

80. 发明授权

US07491575B2 Fabricating zinc oxide semiconductor using hydrolysis 有权
标题翻译：使用水解制备氧化锌半导体
公开(公告)号：US07491575B2
公开(公告)日：2009-02-17
申请号：US11497826
申请日：2006-08-02
申请人： Yiliang Wu , Beng S. Ong
发明人： Yiliang Wu , Beng S. Ong
IPC分类号： H01L21/00 , H01L21/16
CPC分类号： H01L29/7869
摘要： A process for fabricating at least one semiconductor layer of an electronic device including: performing on a composition including a hydrolyzable zinc compound a number of activities including: (a) hydrolyzing at least a portion of the hydrolyzable zinc compound to form zinc oxide; (b) liquid depositing; and (c) optionally heating, wherein the activities (a), (b), and (c) are each accomplished a number of times in any effective arrangement, resulting in the at least one semiconductor layer comprising the zinc oxide.
摘要翻译：一种用于制造电子器件的至少一个半导体层的方法，包括：对包含可水解锌化合物的组合物进行多种活性，包括：（a）水解可水解的锌化合物的至少一部分以形成氧化锌; （b）液体沉积; 和（c）可选地加热，其中活性（a），（b）和（c）各自以任何有效布置实现多次，导致至少一个包含氧化锌的半导体层。

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