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    • 71. 发明申请
    • SACRIFICIAL ETCH PROTECTION LAYERS FOR REUSE OF WAFERS AFTER EPITAXIAL LIFT OFF
    • 外部提升关闭后的重复使用的防腐蚀层
    • US20130043214A1
    • 2013-02-21
    • US13536267
    • 2012-06-28
    • Stephen R. ForrestJeramy ZimmermanKyusang Lee
    • Stephen R. ForrestJeramy ZimmermanKyusang Lee
    • B32B15/04B44C1/22
    • H01L31/1896Y02E10/50Y10T428/31678
    • There is disclosed a growth structure comprising a growth substrate, a sacrificial layer, a buffer layer, at least three substrate protective layers, at least one epilayer, at least one contact, and a metal or alloy-coated host substrate. In one embodiment, the device further comprises at least three device structure protecting layers. The sacrificial layer may be positioned between the growth substrate and the at least one epilayer, wherein the at least three substrate protective layers are positioned between the growth substrate and the sacrificial layer, and the at least three device structure protecting layers are positioned between the sacrificial layer and the epilayer. There is also disclosed a method of preserving the integrity of a growth substrate by releasing the cell structure by etching the sacrificial layer and the protective layers.
    • 公开了一种生长结构,其包括生长衬底,牺牲层,缓冲层,至少三个衬底保护层,至少一个外延层,至少一个接触层,以及涂覆有金属或合金的主体衬底。 在一个实施例中,该装置还包括至少三个装置结构保护层。 牺牲层可以位于生长衬底和至少一个外延层之间,其中至少三个衬底保护层位于生长衬底和牺牲层之间,并且至少三个器件结构保护层位于牺牲层之间 层和外延层。 还公开了通过蚀刻牺牲层和保护层来释放细胞结构来保持生长基质的完整性的方法。
    • 74. 发明授权
    • Organic photosensitive cells grown on rough electrode with nano-scale morphology control
    • 在具有纳米尺度形态控制的粗糙电极上生长的有机光敏电池
    • US07955889B1
    • 2011-06-07
    • US11483642
    • 2006-07-11
    • Fan YangStephen R. Forrest
    • Fan YangStephen R. Forrest
    • H01L51/44H01L51/48
    • H01L51/447H01L51/0053H01L51/0078H01L51/0096H01L51/424Y02E10/549
    • An optoelectronic device and a method for fabricating the optoelectronic device includes a first electrode disposed on a substrate, an exposed surface of the first electrode having a root mean square roughness of at least 30 nm and a height variation of at least 200 nm, the first electrode being transparent. A conformal layer of a first organic semiconductor material is deposited onto the first electrode by organic vapor phase deposition, the first organic semiconductor material being a small molecule material. A layer of a second organic semiconductor material is deposited over the conformal layer. At least some of the layer of the second organic semiconductor material directly contacts the conformal layer. A second electrode is deposited over the layer of the second organic semiconductor material. The first organic semiconductor material is of a donor-type or an acceptor-type relative to the second organic semiconductor material, which is of the other material type.
    • 光电子器件和制造光电器件的方法包括设置在衬底上的第一电极,第一电极的暴露表面具有至少30nm的均方根粗糙度和至少200nm的高度变化,第一电极的第一电极 电极透明。 第一有机半导体材料的共形层通过有机气相沉积沉积到第一电极上,第一有机半导体材料是小分子材料。 第二有机半导体材料层沉积在保形层上。 第二有机半导体材料的至少一些层直接接触共形层。 第二电极沉积在第二有机半导体材料的层上。 第一有机半导体材料是相对于第二有机半导体材料的施主型或受体型,其为另一种材料类型。
    • 75. 发明授权
    • Organic hybrid planar-nanocrystalline bulk heterojunctions
    • 有机混合平面 - 纳米晶体体异质结
    • US07897429B2
    • 2011-03-01
    • US11561448
    • 2006-11-20
    • Stephen R. ForrestFan Yang
    • Stephen R. ForrestFan Yang
    • H01L51/40
    • H01L27/302B82Y10/00H01L51/0046H01L51/0078H01L51/0086H01L51/4246H01L51/4253Y02E10/549Y02P70/521
    • A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.
    • 具有改进的混合平面体异质结的光敏光电子器件包括设置在阳极和阴极之间的多个光导材料。 光电导材料包括供体材料的第一连续层和受主材料的第二连续层。 供体材料或材料的第一网络从第一连续层延伸到第二连续层,提供用于将孔传导到第一连续层的连续路径。 受主材料或材料的第二网络从第二连续层向第一连续层延伸,提供用于将电子传导到第二连续层的连续路径。 第一网络和第二网络彼此交错。 至少另一种光电导材料分散在隔行网络之间。 这种其他光电导材料或材料具有不同于供体和受体材料的吸收光谱。
    • 78. 发明授权
    • Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
    • 带有量子点的中频光敏器件嵌入能量栅栏屏障
    • US07750425B2
    • 2010-07-06
    • US11598006
    • 2006-11-13
    • Stephen R. ForrestGuodan Wei
    • Stephen R. ForrestGuodan Wei
    • H01L27/14
    • H01L31/035236B82Y10/00B82Y15/00B82Y20/00H01L31/09H01L31/18
    • A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.
    • 多层第一半导体材料和多个点阵栅栏栅栏布置在第一电极和第二电极之间的堆叠中。 每个栅栏围栏屏障基本上由第二半导体材料的多个量子点组成,该第二半导体材料嵌入在与第三半导体材料的两层直接接触之间。 量子点的波函数作为至少一个中间带重叠。 第三半导体材料的层被布置为隧道势垒,以在第一材料的层中需要第一电子和/或第一孔,以进行量子力学隧道以在相应量子点内到达第二材料,并且要​​求 在第一半导体材料的层中的第二电子和/或第二孔,以进行量子力学隧道以到达第一半导体材料的另一层。