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    • 78. 发明申请
    • MOSFET well biasing scheme that mitigates body effect
    • MOSFET井偏置方案,减轻身体效应
    • US20050001683A1
    • 2005-01-06
    • US10753194
    • 2004-01-08
    • Sandeep Gupta
    • Sandeep Gupta
    • H03F1/30H03F3/45
    • H03F3/45192H03F1/301H03F2200/153H03F2200/331H03K2217/0018
    • A biasing scheme for a MOSFET that mitigates the MOSFET body effect. The biasing scheme can be realized replicating the voltage at the source terminal of a MOSFET and applying this replicated voltage to the body terminal. In this manner, the effect of the body transconductance, at high frequencies, becomes a function of the ratio of the well-to-substrate capacitance of the MOSFET to the sum of the well-to-substrate capacitance and the source-to-body capacitance of the transistor. At high frequencies, the biasing scheme mitigates the reduction in gain of a source follower caused by the body effect of a driven MOSFET within the source follower, improves the stability of a feedback network established by a gain boosting amplifier and the driven MOSFET by contributing a negative half plane zero to the transfer function of the feedback network, and reduces the power consumed by the gain boosting amplifier.
    • 用于减轻MOSFET体效应的MOSFET的偏置方案。 偏置方案可以实现复用MOSFET的源极端子处的电压,并将该复制电压施加到主体端子。 以这种方式,在高频下,体导体的影响成为MOSFET的阱间电容与衬底间电容和源对体之和的比值的函数。 晶体管的电容。 在高频时,偏置方案可以减轻由源极跟随器中的驱动MOSFET的体效应导致的源极跟随器增益的降低,从而提高由增益放大器和驱动MOSFET所建立的反馈网络的稳定性, 负半平面零到反馈网络的传递函数,并降低增益放大器消耗的功率。