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71. 发明授权

US4733251A Thermal transfer printing 失效
标题翻译：热转印
公开(公告)号：US4733251A
公开(公告)日：1988-03-22
申请号：US69607
申请日：1987-07-02
申请人： Sadatoshi Murakami , Satoru Yamasaki , Masaru Ohnishi , Kenji Nomura , Masayuki Tanaka , Sayoko Hirata
发明人： Sadatoshi Murakami , Satoru Yamasaki , Masaru Ohnishi , Kenji Nomura , Masayuki Tanaka , Sayoko Hirata
IPC分类号： B41J2/325 , B41J31/00 , B41J35/00 , B41J3/20
CPC分类号： B41J2/325
摘要： A thermal transfer printing method which is performed by the use of a thermal printer including a platen, a thermal print head having at least one heating element and a length of ink carrier ribbon with the recording medium positioned between the thermal print head and the length of ink carrier ribbon, which ink carrier ribbon having a base film and an ink layer, which method includes the steps of pressing the ink carrier ribbon against the platen by the thermal print head with the ink layer brought in contact with the recording medium, heating the heating element to cause that portion of the ink layer, which is aligned with the heating element, to fuse, and causing that portion of the ink layer so fused to partially transfer onto the recording medium when a cohesive force acting internally of the ink layer becomes smaller than an adhesive force acting between the ink layer and the recording medium and, at the same time, smaller than a adhesive force acting between the ink layer and the base film, whereby the cohesive force is substantially destroyed so as to permit the thickness of the ink layer to be substantially split into halves such that one of the halves is transferred onto the recording medium and the other of the halves remains adhering to the base film.
摘要翻译：一种热转印打印方法，其通过使用包括压板的热敏打印机，具有至少一个加热元件的热打印头和墨水载体带的长度来执行，记录介质位于热打印头和长度为墨水载体带，该墨水载体带具有基底膜和墨水层，该方法包括以下步骤：通过热敏打印头将墨水载体带压靠在压盘上，墨层与记录介质接触，加热加热元件使得与加热元件对准的油墨层的那部分熔化，并且当在油墨层内部作用的内聚力变为小于在油墨层和记录介质之间作用的粘合力，并且同时小于作用在油墨层和第二层之间的粘合力 e基膜，由此内聚力基本上被破坏，以便允许油墨层的厚度基本上分成两半，使得其中的一半转印到记录介质上，另一半保持粘附到基底电影。

72. 发明授权

US4722133A Tool transfer mechanism for machine tools 失效
标题翻译：机床刀具传送机构
公开(公告)号：US4722133A
公开(公告)日：1988-02-02
申请号：US775793
申请日：1985-09-13
申请人： Kenji Nomura , Toshifumi Hasegawa , Shigeru Doi
发明人： Kenji Nomura , Toshifumi Hasegawa , Shigeru Doi
IPC分类号： B23Q3/155 , B23Q3/157
CPC分类号： B23Q3/1554 , B23Q3/15773 , Y10T483/1736 , Y10T483/176 , Y10T483/1891
摘要： A tool transfer mechanism for transferring a tool between a gateway position of a tool storage magazine and an exchange position adjacent a spindle which includes a base mounted on a frame, an actuator for rectilinearly moving the base, and a holding arm mounted on the base resiliently biased toward the tool to hold the same. The holding arm is moved outwardly to release the tool when the base is at the gateway position. The base is rotated in accordance with its rectilinear movement to change the posture of the tool between a first posture where the tool is parallel with remaining tools stored in the magazine and a second posture where the tool is parallel with the spindle.
摘要翻译：一种工具传送机构，用于在工具存储盒的网关位置和邻近主轴的交换位置之间传送工具，该主轴包括安装在框架上的基座，用于直线移动底座的致动器以及弹性地安装在基座上的保持臂偏向工具夹持。当基座处于关门位置时，保持臂向外移动以释放工具。根据其直线运动使基座旋转，以在刀具平行于存储在刀库中的剩余刀具的第一姿势与刀具与主轴平行的第二姿势之间改变刀具的姿态。

73. 发明授权

US09947803B2 Amorphous oxide and thin film transistor 有权
公开(公告)号：US09947803B2
公开(公告)日：2018-04-17
申请号：US13097572
申请日：2011-04-29
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L21/336 , H01L29/786 , C23C14/00 , C23C14/08 , C23C14/28 , C23C14/34 , H01L21/02 , H01L27/12
CPC分类号： H01L29/78696 , C23C14/0021 , C23C14/086 , C23C14/28 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693
摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

74. 发明授权

US09269826B2 Amorphous oxide and thin film transistor 有权
标题翻译：无定形氧化物和薄膜晶体管
公开(公告)号：US09269826B2
公开(公告)日：2016-02-23
申请号：US12984960
申请日：2011-01-05
申请人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
发明人： Hideo Hosono , Masahiro Hirano , Hiromichi Ota , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L29/786 , C23C14/00 , C23C14/08 , C23C14/28 , C23C14/34 , H01L21/02 , H01L27/12
CPC分类号： H01L29/78696 , C23C14/0021 , C23C14/086 , C23C14/28 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/7869 , H01L29/78693
摘要： The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.
摘要翻译：本发明涉及使用该无定形氧化物的无定形氧化物和薄膜晶体管。特别地，本发明提供了电子载流子浓度小于1018 / cm3的非晶氧化物，以及使用这种无定形氧化物的薄膜晶体管。在具有源电极6，漏电极5，栅电极4，栅极绝缘膜3和沟道层2的薄膜晶体管中，使用电子载流子浓度小于1018 / cm3的非晶氧化物通道层2。

75. 发明授权

US08652854B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08652854B2
公开(公告)日：2014-02-18
申请号：US13417811
申请日：2012-03-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

76. 发明授权

US08153448B2 Manufacturing method of a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08153448B2
公开(公告)日：2012-04-10
申请号：US12453451
申请日：2009-05-12
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

77. 发明授权

US07829444B2 Field effect transistor manufacturing method 有权
标题翻译：场效应晶体管制造方法
公开(公告)号：US07829444B2
公开(公告)日：2010-11-09
申请号：US11269641
申请日：2005-11-09
申请人： Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Hisato Yabuta , Masafumi Sano , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L21/20
CPC分类号： H01L29/78618 , H01L29/66969 , H01L29/78693
摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译：提供一种用于制造场效应晶体管的新颖方法。在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

78. 发明申请

US20100267198A1 FIELD EFFECT TRANSISTOR MANUFACTURING METHOD 审中-公开
标题翻译：场效应晶体管制造方法
公开(公告)号：US20100267198A1
公开(公告)日：2010-10-21
申请号：US12824568
申请日：2010-06-28
申请人： HISATO YABUTA , MASAFUMI SANO , TATSUYA IWASAKI , HIDEO HOSONO , Toshio Kamiya , KENJI NOMURA
发明人： HISATO YABUTA , MASAFUMI SANO , TATSUYA IWASAKI , HIDEO HOSONO , Toshio Kamiya , KENJI NOMURA
IPC分类号： H01L21/36
CPC分类号： H01L29/78618 , H01L29/66969 , H01L29/78693
摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
摘要翻译：提供一种用于制造场效应晶体管的新颖方法。在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

79. 发明授权

US07547933B2 Semiconductor device and manufacturing method of a semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US07547933B2
公开(公告)日：2009-06-16
申请号：US10695643
申请日：2003-10-29
申请人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
发明人： Tomohiro Takamatsu , Junichi Watanabe , Ko Nakamura , Wensheng Wang , Naoyuki Sato , Aki Dote , Kenji Nomura , Yoshimasa Horii , Masaki Kurasawa , Kazuaki Takai
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L21/31691 , H01L28/56
摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.
摘要翻译：提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向，具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

80. 发明授权

US07473949B2 Ferroelectric capacitor and method of manufacturing the same 失效
标题翻译：铁电电容器及其制造方法
公开(公告)号：US07473949B2
公开(公告)日：2009-01-06
申请号：US11081663
申请日：2005-03-17
申请人： Jeffrey Scott Cross , Mineharu Tsukada , John David Baniecki , Kenji Nomura , Igor Stolichnov
发明人： Jeffrey Scott Cross , Mineharu Tsukada , John David Baniecki , Kenji Nomura , Igor Stolichnov
IPC分类号： H01L29/92
CPC分类号： G11C11/22 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/65 , H01L28/75
摘要： After a step of fabricating a MOS transistor (14) on a semiconductor substrate (11) and further steps up to bury a W plug (24), an Ir film (25a), an IrOy film (25b), a PZT film (26), and an IrOx film (27) are formed sequentially over the entire surface. The composition of the PZT film (26) is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (25a), the IrOy film (25b), the PZT film (26) and the IrOx film (27), annealing is effected to remedy the damage to the PZT film (26) that is caused when the IrOx film (27) is formed and to diffuse Ir in the IrOx film (27) into the PZT film (26). As a result, the Ir diffused into the PZT film (26) concentrates at an interface between the IrOx film (27) and the PZT film (26) and at grain boundaries in the PZT film (26), and the Ir concentrations at the interface and boundaries are higher than those in the grains.
摘要翻译：在半导体衬底（11）上制造MOS晶体管（14）的步骤之后，进一步升高埋入W插头（24），Ir膜（25a），IrOy膜（25b），PZT膜（26）），并且在整个表面上依次形成IrOx膜（27）。 PZT膜（26）的组成使得Pb的含量超过Zr和Ti的含量。在Ir膜（25a），IrOy膜（25b），PZT膜（26）和IrOx膜（27）的处理之后，进行退火以补偿当IrOx膜（26）引起的对PZT膜（26）的损伤形成膜（27）并使IrOx膜（27）中的Ir扩散到PZT膜（26）中。结果，扩散到PZT膜（26）中的Ir浓缩在IrOx膜（27）和PZT膜（26）之间的界面以及PZT膜（26）中的晶界处，并且在界面和边界高于谷物。

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