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71. 发明申请

US20100249400A1 NOVEL DIHYDRONAPHTHALENE COMPOUND AND USE THEREOF 有权
标题翻译：新型二氢萘酚化合物及其用途
公开(公告)号：US20100249400A1
公开(公告)日：2010-09-30
申请号：US12675331
申请日：2008-09-11
申请人： Isamu Shiina
发明人： Isamu Shiina
IPC分类号： C07D403/12 , C07D413/12 , C07C211/09 , C07D401/12
CPC分类号： C07D295/088 , C07C217/24 , C07C2602/10
摘要： Disclosed is a compound represented by the formula (I) below as a dihydronaphthalene compound having a chemical structure which is excellent in production efficiency when compared with lasofoxifene and nafoxidine. This compound is useful as a proteasome inhibitor and/or an antitumor agent. (In the formula, two —(CH2)l—N(R1) (R2) groups represent a same substituent; R1 and R2 each represents a hydrogen atom, or a same or different alkyl group; or alternatively, R1 and R2 may combine together to form a monocyclic heterocyclic ring with a nitrogen atom having them or additionally together with one or more atoms selected from an oxygen atom, a sulfur atom and a nitrogen atom; R3, R4 and R5 each represents one or more substituents selected from a hydrogen atom, an alkyl group, an acyl group, an alicyclic group, an aromatic group, a halogen atom, an acyloxy group, a cyano group and a nitro group; l represents an integer of 2-5; n represents an integer of 1-4; m represents an integer of 1-5; and q represents an integer of 1-3.)
摘要翻译：公开了下述式（I）表示的化合物，其具有与拉索昔芬和nafoxidine相比具有优异的生产效率的化学结构的二氢化合物。该化合物可用作蛋白酶体抑制剂和/或抗肿瘤剂。（式中，二 - （CH 2）1 -N（R 1）（R 2）基团表示相同的取代基; R 1和R 2各自表示氢原子或相同或不同的烷基;或者，R 1和R 2可以组合一起形成具有氮原子的单环杂环，或者另外与一个或多个选自氧原子，硫原子和氮原子的原子一起形成; R3，R4和R5各自表示一个或多个选自氢的取代基原子，烷基，酰基，脂环族基团，芳香族基团，卤素原子，酰氧基，氰基和硝基; l表示2-5的整数; n表示1- 4; m表示1-5的整数，q表示1-3的整数。）

72. 发明申请

US20100208412A1 FERROELECTRIC MATERIAL, METHOD OF PRODUCING FERROELECTRIC MATERIAL, AND FERROELECTRIC DEVICE 有权
标题翻译：电磁材料，生产电磁材料的方法和电磁装置
公开(公告)号：US20100208412A1
公开(公告)日：2010-08-19
申请号：US12700381
申请日：2010-02-04
申请人： Kenji Takashima , Makoto Kubota , Soichiro Okamura , Takashi Nakajima , Tomosato Okubo , Yosuke Inoue
发明人： Kenji Takashima , Makoto Kubota , Soichiro Okamura , Takashi Nakajima , Tomosato Okubo , Yosuke Inoue
IPC分类号： H01G4/10 , C01G49/02 , B05D1/18
CPC分类号： H01G7/06 , B82Y30/00 , C01G49/0018 , C01G49/009 , C01P2002/34 , C01P2002/52 , C01P2004/62 , C01P2004/64 , C01P2006/40 , H01G4/10 , H01G4/33 , H01L21/02197 , H01L28/55 , H01L41/1878 , H01L41/318
摘要： Provided are a ferroelectric material having good ferroelectricity and good insulation property, and a ferroelectric device using the ferroelectric material. In the present invention, the ferroelectric material includes a metal oxide having a perovskite-type crystal structure, in which: the metal oxide contains bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide; the bismuth ferrite is substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese; and at least one of the copper oxide and the nickel oxide is added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese.
摘要翻译：提供具有良好的铁电性和良好绝缘性的铁电材料，以及使用铁电材料的铁电体元件。在本发明中，所述铁电体材料包括具有钙钛矿型晶体结构的金属氧化物，其中：所述金属氧化物含有铁被铁取代的铋铁氧体，以及氧化铜和氧化镍中的至少一种; 铋铁氧体以0.5at的取代比被锰代替。％以上〜20点。相对于铁和锰的总量为％以下; 相对于铁被铁取代的铁酸铋，氧化铜和氧化镍中的至少一种的添加量为0.5摩尔％以上至20摩尔％以下。

73. 发明申请

US20100155647A1 OXYNITRIDE PIEZOELECTRIC MATERIAL AND METHOD OF PRODUCING THE SAME 有权
标题翻译：氧化物压电材料及其制造方法
公开(公告)号：US20100155647A1
公开(公告)日：2010-06-24
申请号：US12639473
申请日：2009-12-16
申请人： Hiroshi Saito , Takanori Matsuda , Kaoru Miura , Kenji Takashima , Masaki Azuma , Takashi Iijima , Hiroshi Funakubo , Soichiro Okamura , Nobuhiro Kumada , Satoshi Wada
发明人： Hiroshi Saito , Takanori Matsuda , Kaoru Miura , Kenji Takashima , Masaki Azuma , Takashi Iijima , Hiroshi Funakubo , Soichiro Okamura , Nobuhiro Kumada , Satoshi Wada
IPC分类号： H01L41/187
CPC分类号： H01L41/187 , C01B21/0821 , C01P2002/34 , C01P2002/77 , C04B35/58 , C04B35/58014 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3232 , C04B2235/3236 , C04B2235/3244 , C04B2235/3287 , C04B2235/3293 , C04B2235/3298 , C04B2235/3418 , C04B2235/3873 , C04B2235/3886 , C04B2235/3895 , C04B2235/465 , C04B2235/6025 , C04B2235/761 , C04B2235/765 , C04B2235/768 , C04B2235/787 , H01L41/43
摘要： Provided are an oxynitride piezoelectric material which exhibits ferroelectricity and has good piezoelectric properties and a method of producing the oxynitride piezoelectric material. The oxynitride piezoelectric material includes a tetragonal perovskite-type oxynitride represented by the following general formula (1): A1-xBix+δ1B1-yB′y+δ2O3-zNz (1) where A represents a divalent element, B and B′ each represent a tetravalent element, x represents a numerical value of 0.35 or more to 0.6 or less, y represents a numerical value of 0.35 or more to 0.6 or less, z represents a numerical value of 0.35 or more to 0.6 or less, and δ1 and δ2 each represent a numerical value of −0.2 or more to 0.2 or less, in which the A includes at least one kind selected from Ba, Sr, and Ca and the B and the B′ each include at least one kind selected from Ti, Zr, Hf, Si, Ge, and Sn.
摘要翻译：本发明提供一种表现出铁电性并且具有良好的压电性能的氮氧化合物压电材料以及制造氮氧化合物压电材料的方法。氮氧化物压电材料包括由以下通式（1）表示的四方晶系钙钛矿型氧氮化物：A1-xBix +δ1B1-yB'y +δ2O3-zNz（1）其中A表示二价元素，B和B'各自表示四价元素，x表示0.35以上且0.6以下的数值，y表示0.35以上且0.6以下的数值，z表示0.35以上且0.6以下的数值，δ1和δ2 各自表示-0.2以上至0.2以下的数值，其中A包括选自Ba，Sr和Ca中的至少一种，B和B'各自包含选自Ti，Zr中的至少一种，Hf，Si，Ge和Sn。

74. 发明申请

US20090323189A1 Anti-Reflection Structure Body, Method Of Producing The Same And Method Of Producing Optical Member 有权
标题翻译：防反射结构体及其制造方法及其制造方法
公开(公告)号：US20090323189A1
公开(公告)日：2009-12-31
申请号：US12310016
申请日：2007-08-09
申请人： Jun Taniguchi
发明人： Jun Taniguchi
IPC分类号： G02B1/11 , C23C14/48
CPC分类号： G02B1/118
摘要： An anti-reflection structure body comprises a base member which is made of glassy carbon and at a surface of which is formed an anti-reflection structure including a cluster of minute projections each having a diameter that contracts towards a tip thereof. The minute projections preferably have an average height of from 200 nm to 3000 nm and an average maximum diameter of from 50 nm to 300 nm, and an average pitch of from 50 nm to 300 nm. An anti-reflection structure body which is easily produced, capable of achieving an anti-reflection effect near to non-reflection, and capable of providing the minute structure even to a member having a high melting point such as quartz glass or the like by transfer or the like can be provided.
摘要翻译：防反射结构体包括由玻璃碳制成的基底构件，其表面形成有防反射结构，该防反射结构包括具有朝向其尖端收缩的直径的微小突起簇。微小突起的平均高度优选为200nm〜3000nm，平均最大直径为50nm〜300nm，平均间距为50nm〜300nm。一种抗反射结构体，其易于制造，能够实现接近无反射的抗反射效果，并且能够通过转印对具有高熔点的构件（例如石英玻璃等）提供均匀的微小结构或类似物。

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