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71. 发明授权

US09577142B2 Process for forming semiconductor laser diode implemented with sampled grating 有权
标题翻译：用采样光栅实现的形成半导体激光二极管的工艺
公开(公告)号：US09577142B2
公开(公告)日：2017-02-21
申请号：US14926579
申请日：2015-10-29
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Masami Ishiura
IPC分类号： H01L33/00 , H01L33/10 , H01S5/227 , H01S5/0625 , H01S5/12 , H01S5/026 , H01S5/50
CPC分类号： H01L33/0062 , H01L33/10 , H01S5/0261 , H01S5/0265 , H01S5/06258 , H01S5/1209 , H01S5/2275 , H01S5/50
摘要： A method to produce a semiconductor laser diode (LD) including a sampled grating (SG) is disclosed. The method prepares various resist patterns each including grating regions and space regions alternately arranged along an optical axis. The grating regions and the space region in respective cavity types have total widths same with the others but the grating regions in respective types has widths different from others. After the formation of the grating patterns based on the resist patterns, only one of the grating patterns is used for subsequent processes.
摘要翻译：公开了一种制造包括采样光栅（SG）的半导体激光二极管（LD）的方法。该方法制备各种抗蚀剂图案，每个抗蚀图案包括沿着光轴交替布置的光栅区域和空间区域。相应腔型中的光栅区域和空间区域具有与其它类型相同的总宽度，但是各种类型的光栅区域具有与其它区域不同的宽度。在基于抗蚀剂图案形成光栅图案之后，仅将一种光栅图案用于后续处理。

72. 发明授权

US09564504B2 Semiconductor device and method of manufacturing semiconductor device 有权
公开(公告)号：US09564504B2
公开(公告)日：2017-02-07
申请号：US15014439
申请日：2016-02-03
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Masahiro Nishi
IPC分类号： H01L21/338 , H01L29/45 , H01L21/285 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/20 , H01L21/02 , H01L21/283 , H01L21/306 , H01L21/324 , H01L21/3213 , H01L21/768
CPC分类号： H01L29/452 , H01L21/02389 , H01L21/283 , H01L21/28575 , H01L21/28587 , H01L21/30604 , H01L21/32133 , H01L21/324 , H01L21/3245 , H01L21/768 , H01L29/2003 , H01L29/41733 , H01L29/42312 , H01L29/66462
摘要： A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrode 22 containing Ti or Ta on a top face of a nitride semiconductor layer 18; a second step of forming a second electrode 24 containing Al on a top face of the first electrode 22; a third step of forming a coating metal layer 26 covering at least one of an edge of a top face of the second electrode 24 and a side face of the second electrode 24, having a window 26a exposing the top face of the second electrode 24 in a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.

73. 发明授权

US09432139B2 Optical module having composite prism to multiplex optical beams 有权
标题翻译：具有复合棱镜的光学模块用于复用光束
公开(公告)号：US09432139B2
公开(公告)日：2016-08-30
申请号：US14244705
申请日：2014-04-03
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Takeshi Okada
IPC分类号： G02B6/34 , H04J14/02 , G02B27/10 , G02B27/09 , G02B6/42
CPC分类号： H04J14/02 , G02B6/4206 , G02B6/425 , G02B27/0922 , G02B27/1006
摘要： An optical module that installs a plurality of laser diodes (LDs) and a composite prism to condense optical beams emitted from the LDs is disclosed. The LDs are arranged on a line so as to level the optical beams within a plane. The composite prism includes input surfaces and output surfaces each corresponding to respective one of the input surfaces. The composite prism outputs optical beams whose intervals are narrowed compared with intervals of the optical beams entering therein.
摘要翻译：公开了一种安装多个激光二极管（LD）和复合棱镜以冷凝从LD发射的光束的光学模块。 LD被布置在一条直线上，以使平面内的光束平坦化。复合棱镜包括各自对应于输入表面中的相应一个的输入表面和输出表面。复合棱镜输出与进入其中的光束的间隔相比间隔窄的光束。

74. 发明授权

US09413138B2 Method of controlling wavelength tunable laser, control data structure of wavelength tunable laser, and wavelength tunable laser 有权
标题翻译：波长可调激光器的控制方法，波长可调激光器的波长可调谐激光器的控制数据结构
公开(公告)号：US09413138B2
公开(公告)日：2016-08-09
申请号：US13955210
申请日：2013-07-31
申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
发明人： Hirokazu Tanaka , Masao Shibata , Hiromitsu Kawamura , Mitsuyoshi Miyata
IPC分类号： H01S5/06 , H01S5/0687 , B82Y20/00 , H01S5/026 , H01S5/028 , H01S5/0625 , H01S5/0683 , H01S5/12 , H01S5/14 , H01S5/343
CPC分类号： H01S5/0617 , B82Y20/00 , H01S5/0265 , H01S5/028 , H01S5/0612 , H01S5/06256 , H01S5/06258 , H01S5/0683 , H01S5/0687 , H01S5/1209 , H01S5/1212 , H01S5/141 , H01S5/34306 , H01S5/4025
摘要： A method of controlling a wavelength tunable laser to control an oscillation wavelength based on a difference between a detection result of a wavelength by a wavelength detecting unit and a target value, the method includes: acquiring a first drive condition of the wavelength tunable laser to make the wavelength tunable laser oscillate at a first wavelength from a memory; calculating a second drive condition to drive the wavelength tunable laser at a second wavelength by referring to the first drive condition and a wavelength difference between the first wavelength and the second wavelength, the second wavelength differing from the first wavelength; and driving the wavelength tunable laser based on the second drive condition calculated at the calculating of the second drive condition.
摘要翻译：一种基于波长检测单元的波长检测结果与目标值之间的差异来控制波长可调谐激光器来控制振荡波长的方法，该方法包括：获得波长可调激光器的第一驱动条件，波长可调激光器从存储器以第一波长振荡; 计算第二驱动条件以通过参考第一驱动条件和第一波长与第二波长之间的波长差来驱动波长可调激光器处于第二波长，第二波长不同于第一波长; 以及基于在计算第二驱动条件下计算出的第二驱动条件驱动波长可调激光器。

75. 发明申请

US20160118240A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20160118240A1
公开(公告)日：2016-04-28
申请号：US14989462
申请日：2016-01-06
申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
发明人： Tsutomu Komatani
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L21/0217 , H01L21/02164 , H01L21/02178 , H01L21/0228 , H01L29/42316 , H01L29/475 , H01L29/66462 , H01L29/66924 , H01L29/7787
摘要： A method for fabricating a semiconductor device includes: forming a first film on a nitride semiconductor layer so as to contact the nitride semiconductor layer and have a thickness equal to or larger than 1 nm and equal to or smaller than 5 nm, the first film being made of silicon nitride having a composition ratio of silicon to nitrogen larger than 0.75, silicon oxide having a composition ratio of silicon to oxygen larger than 0.5, or aluminum; and forming a source electrode, a gate electrode and a drain electrode on the nitride semiconductor layer.

76. 发明授权

US09325153B2 Method to control transmitter optical module 有权
标题翻译：控制发射机光模块的方法
公开(公告)号：US09325153B2
公开(公告)日：2016-04-26
申请号：US14465615
申请日：2014-08-21
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Kenji Otobe , Kenichi Nakayama
IPC分类号： H04B10/564 , H01S5/0683 , H01S5/068
CPC分类号： H01S5/0683 , H01S5/06804 , H01S5/06808
摘要： An optical module capable of monitoring an inner temperature thereof by a simple arrangement is disclosed. The optical module installs an avalanche photodiode (APD). The APD generates the first photocurrent under a bias where the APD shows the multiplication factor thereof M equal to the unity, and the second photocurrent under another bias where the multiplication factor becomes greater than the unity. The operating temperature of the laser diode (LD) may be estimated from a ratio of the first photocurrent to the second photocurrent.
摘要翻译：公开了一种能够通过简单的配置监视其内部温度的光学模块。光学模块安装雪崩光电二极管（APD）。 APD在偏置下产生第一光电流，其中APD显示其乘法因子M等于单位，而第二光电流在倍增因子变得大于单位的另一偏压下产生。激光二极管（LD）的工作温度可以从第一光电流与第二光电流的比率估计。

77. 发明授权

US09281370B2 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09281370B2
公开(公告)日：2016-03-08
申请号：US14318064
申请日：2014-06-27
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Masahiro Nishi
IPC分类号： H01L21/338 , H01L29/45 , H01L21/285 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/20
CPC分类号： H01L29/452 , H01L21/02389 , H01L21/283 , H01L21/28575 , H01L21/28587 , H01L21/30604 , H01L21/32133 , H01L21/324 , H01L21/3245 , H01L21/768 , H01L29/2003 , H01L29/41733 , H01L29/42312 , H01L29/66462
摘要： A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrode 22 containing Ti or Ta on a top face of a nitride semiconductor layer 18; a second step of forming a second electrode 24 containing Al on a top face of the first electrode 22; a third step of forming a coating metal layer 26 covering at least one of an edge of a top face of the second electrode 24 and a side face of the second electrode 24, having a window 26a exposing the top face of the second electrode 24 in a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.
摘要翻译：根据本发明的实施例的制造方法是制造半导体器件的方法，其具有：在氮化物半导体层18的顶面上形成包含Ti或Ta的第一电极22的第一步骤; 在第一电极22的顶面上形成包含Al的第二电极24的第二步骤; 形成覆盖第二电极24的顶面的边缘和第二电极24的侧面中的至少一个的涂覆金属层26的第三步骤，具有将第二电极24的顶面露出的窗口26a 与前述边缘分离并含有Ta，Mo，Pd，Ni和Ti中的至少一种的区域; 以及在第三步骤之后进行热处理的步骤。

78. 发明授权

US09279848B2 Test apparatus 有权
标题翻译：测试仪器
公开(公告)号：US09279848B2
公开(公告)日：2016-03-08
申请号：US14466719
申请日：2014-08-22
申请人： Sumitomo Electric Device Innovations, Inc.
发明人： Haruyoshi Ono , Isao Baba
IPC分类号： G01M11/02 , G01R31/26 , H01S5/00
CPC分类号： G01R31/2635 , G01M11/0207 , H01S5/0014
摘要： Disclosed is a test apparatus including: test target sections each having a connector to connect a Device Under the Test (DUT); measuring sections that include measuring devices that have same measuring item respectively; a switch section that switches connection between the test target section and the measuring section under direction of a controller; wherein the controller selects one of the algorithms of connection, 1) searching vacancy of the measuring sections and directs the switch section to make a path between the test target section and the measuring section of vacancy, 2) holding the path that former selected.
摘要翻译：公开了一种测试装置，包括：测试目标部分，每个测试目标部分具有用于连接被测设备（DUT）的连接器; 测量部分包括分别具有相同测量项目的测量装置; 开关部，其在控制器的方向上切换所述测试对象部与所述测量部之间的连接; 其中所述控制器选择所述连接算法之一，1）搜索所述测量部分的空位并引导所述切换部分在所述测试目标部分与所述测量部分之间建立空位，2）保持所选择的路径。

79. 发明授权

US09130083B2 Semiconductor light receiving device and light receiving apparatus 有权
标题翻译：半导体光接收装置和光接收装置
公开(公告)号：US09130083B2
公开(公告)日：2015-09-08
申请号：US14072463
申请日：2013-11-05
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
发明人： Yoshihiro Yoneda , Takuya Fujii , Tooru Uchida
IPC分类号： H01L31/10 , H01L31/0304 , H01L31/109 , H01L31/103
CPC分类号： H01L31/03042 , H01L31/02327 , H01L31/0304 , H01L31/03046 , H01L31/1035 , H01L31/109 , H01L31/184
摘要： A semiconductor light receiving device includes a substrate having an incident surface receiving light incident on the semiconductor light receiving device and a principal surface opposite to the incident surface; a first semiconductor layer disposed on the principal surface of the substrate, the first semiconductor layer defining one of a cathode region and an anode region; a light absorbing region disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light absorbing region, the second semiconductor layer defining the other of the cathode region and the anode region and forming a junction with the light absorbing region. The light absorbing region includes a semiconductor layer having a conductivity type opposite to the conductivity type of the first semiconductor layer. The semiconductor layer of the light absorbing region forms a p-n junction with the first semiconductor layer.
摘要翻译：半导体光接收装置包括具有入射在半导体光接收装置上的入射表面的入射表面和与入射表面相对的主表面的基板; 设置在所述基板的主表面上的第一半导体层，所述第一半导体层限定阴极区域和阳极区域中的一个; 设置在所述第一半导体层上的光吸收区域; 以及设置在所述光吸收区域上的第二半导体层，所述第二半导体层限定所述阴极区域和所述阳极区域中的另一个，并与所述光吸收区域形成结。光吸收区域包括具有与第一半导体层的导电类型相反的导电类型的半导体层。光吸收区的半导体层与第一半导体层形成p-n结。

80. 发明申请

US20150228715A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20150228715A1
公开(公告)日：2015-08-13
申请号：US14696007
申请日：2015-04-24
申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
发明人： Masatoshi Koyama , Kazuaki Matsuura , Tsutomu Komatani
IPC分类号： H01L29/06 , H01L21/311 , H01L29/66
CPC分类号： H01L29/0611 , H01L21/02104 , H01L21/02107 , H01L21/0217 , H01L21/31116 , H01L29/0649 , H01L29/0692 , H01L29/2003 , H01L29/41758 , H01L29/66045 , H01L29/66462 , H01L29/66568 , H01L29/7786
摘要： A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active region, and a third active region, which crosses the inactive region to electrically connect the first active region to the second active region, in a semiconductor layer; forming an insulating layer on the semiconductor layer; and forming an opening selectively in the insulating layer by dry etching.
摘要翻译：一种制造半导体器件的方法包括：形成第一有源区，第二有源区，位于第一有源区和第二有源区之间的非活性区，以及与第一有源区交叉的第三有源区，在半导体层中的第二有源区的第一有源区; 在半导体层上形成绝缘层; 并通过干蚀刻在绝缘层中选择性地形成开口。

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