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61. 发明申请

US20210202345A1 PACKAGES WITH SEPARATE COMMUNICATION AND HEAT DISSIPATION PATHS 有权
公开(公告)号：US20210202345A1
公开(公告)日：2021-07-01
申请号：US16731709
申请日：2019-12-31
申请人： TEXAS INSTRUMENTS INCORPORATED
发明人： Sreenivasan KODURI
IPC分类号： H01L23/367 , H01L23/13 , H01L23/485 , H01L25/065 , H01L23/31 , H01L25/16 , H01L23/14 , H01L21/56 , H01L23/482 , H01L21/48
摘要： In some examples, a package comprises a platform and at least one pedestal positioned along at least a portion of a perimeter of the platform. The platform and the at least one pedestal form a cavity. The package also comprises a die positioned in the cavity and on the platform, with the die having an active circuit facing away from the platform. The package also comprises a conductive layer coupled to the die and to a conductive terminal. The conductive terminal is positioned above the at least one pedestal, and the die and the conductive terminal are positioned in different horizontal planes.

62. 发明授权

US11043417B2 Line structure for fan-out circuit and manufacturing method thereof, and photomask pattern for fan-out circuit 有权
公开(公告)号：US11043417B2
公开(公告)日：2021-06-22
申请号：US16439499
申请日：2019-06-12
申请人： MACRONIX International Co., Ltd.
发明人： Wei-Hung Wang , Chih-Hao Huang
IPC分类号： H01L21/768 , H01L21/027 , H01L23/482 , H01L23/528
摘要： A line structure for fan-out circuit having a dense-line area and a fan-out area is provided. The line structure includes a plurality of dense lines arranged in the dense-line area parallel to a first direction, a plurality of pads disposed in the fan-out area, and a plurality of connecting lines arranged in the fan-out area parallel to a second direction. The connecting lines respectively connect one of the dense lines with one of the pads, wherein at least one of the connecting lines is a wavy line.

63. 发明申请

US20210166993A1 SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20210166993A1
公开(公告)日：2021-06-03
申请号：US16700761
申请日：2019-12-02
申请人： Advanced Semiconductor Engineering, Inc.
发明人： You-Lung YEN , Bernd Karl APPELT
IPC分类号： H01L23/48 , H01L23/482 , H01L23/31 , H01L21/56 , H01L21/762 , H01L23/00
摘要： A semiconductor device package includes a substrate, a first semiconductor die, a conductive via, a first contact pad and a second contact pad. The substrate includes a first surface, and a second surface opposite to the first surface, the substrate defines a cavity through the substrate. The first semiconductor die is disposed in the cavity, wherein the first semiconductor die includes an active surface adjacent to the first surface, and an inactive surface. The conductive via penetrates through the substrate. The first contact pad is exposed from the active surface of the first semiconductor die and adjacent to the first surface of the substrate. The second contact pad is disposed on the first surface of the substrate, wherein the second contact pad is connected to a first end of the conductive via.

64. 发明授权

US11011468B2 Semiconductor structure and method for manufacturing the same 有权
公开(公告)号：US11011468B2
公开(公告)日：2021-05-18
申请号：US16676291
申请日：2019-11-06
申请人： NANYA TECHNOLOGY CORPORATION
发明人： Hsih-Yang Chiu
IPC分类号： H01L23/528 , H01L23/48 , H01L23/482 , H01L21/768 , H01L21/683 , H01L21/304 , H01L21/283 , H01L23/538
摘要： The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate, a target layer, a plurality of metal pads, a plurality of conductive lines, a plurality of conductive plugs, an isolating liner, and a plurality of metal contacts. The semiconductor substrate has a front surface, a rear surface opposite to the front surface, and an implanted region connected to the rear surface. The target layer is disposed over the front surface. The metal pads are disposed over the target layer. The plurality of conductive lines are disposed within the semiconductor substrate and the target layer and connected to the metal pads. The conductive plugs are disposed in the implanted region. The isolating liner encircles the conductive plugs. The metal contacts are disposed over the conductive lines and the conductive plugs.

65. 发明授权

US10978580B2 Insulated gate bipolar transistor and diode 有权
公开(公告)号：US10978580B2
公开(公告)日：2021-04-13
申请号：US16849705
申请日：2020-04-15
申请人： ROHM CO., LTD.
发明人： Kohei Shinsho
IPC分类号： H01L29/739 , H01L29/41 , H01L29/417 , H01L29/08 , H01L23/482 , H01L29/66 , H01L29/06
摘要： A semiconductor device includes a semiconductor layer having a first principal surface on one side thereof and a second principal surface on the other side thereof, a channel region of a first conductivity type formed at a surface layer portion of the first principal surface of the semiconductor layer, an emitter region of a second conductivity type formed at a surface layer portion of the channel region in the semiconductor layer, a drift region of the second conductivity type formed in a region of the second principal surface side with respect to the channel region in the semiconductor layer so as to be electrically connected to the channel region, a collector region of the first conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region, a cathode region of the second conductivity type formed at a surface layer portion of the second principal surface of the semiconductor layer so as to be electrically connected to the drift region and including a continuously laid around line-shaped pattern, and a gate electrode formed at the first principal surface side of the semiconductor layer so as to face the channel region across an insulating film.

66. 发明申请

US20210057523A1 Semiconductor Device Including Trench Electrode Structures 有权
公开(公告)号：US20210057523A1
公开(公告)日：2021-02-25
申请号：US16991090
申请日：2020-08-12
申请人： Infineon Technologies Austria AG
发明人： Alim Karmous
IPC分类号： H01L29/06 , H01L23/482 , H01L29/423 , H01L29/417 , H01L29/40 , H01L21/761 , H01L21/762
摘要： A semiconductor device is proposed. The semiconductor device includes a semiconductor body including a first main surface. A plurality of trench electrode structures extend in parallel along a first lateral direction. A first one of the plurality of trench electrode structures includes a gate electrode. A gate contact is electrically connected to the gate electrode in a gate contact area. The gate contact area is arranged in a first section along the first lateral direction. An isolation structure is arranged between the gate contact and the semiconductor body in the gate contact area. A bottom side of the isolation structure is arranged between a bottom side of the first one of the plurality of trench electrode structures and the first main surface along a vertical direction. The gate contact extends up to or below the first main surface along the vertical direction.

67. 发明授权

US10930987B2 Microfabricated air bridges for planar microwave resonator circuits 有权
公开(公告)号：US10930987B2
公开(公告)日：2021-02-23
申请号：US16534249
申请日：2019-08-07
申请人： International Business Machines Corporation
发明人： Vivekananda P. Adiga , Markus Brink
IPC分类号： H01P3/02 , H01L21/3205 , H01L21/768 , H05H7/20 , H01L23/482 , H01B12/06 , H01P11/00
摘要： The present invention provides a process and structure of microfabricated air bridges for planar microwave resonator circuits. In an embodiment, the invention includes depositing a superconducting film on a surface of a base material, where the superconducting film is formed with a compressive stress, where the compressive stress is higher than a critical buckling stress of a defined structure, etching an exposed area of the superconducting film, thereby creating the at least one bridge, etching the base material, thereby forming a gap between the at least one bridge and the base material, depositing the at least one metal line on at least part of the superconducting film and at least part of the base material, where the at least one metal line runs under the bridge.

68. 发明申请

US20210013128A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20210013128A1
公开(公告)日：2021-01-14
申请号：US17034599
申请日：2020-09-28
申请人： FUJI ELECTRIC CO., LTD.
发明人： Keiji OKUMURA
IPC分类号： H01L23/482 , H01L29/423
摘要： In an inactive region of an active region, a gate pad, a gate poly-silicon layer, and a gate finger are provided at a front surface of a semiconductor substrate, via an insulating film. The gate poly-silicon layer is provided beneath the gate pad, sandwiching the insulating film therebetween. The gate pad, the gate poly-silicon layer, a gate finger, gate electrodes of a trench gate structure, a gate finger, and a second measurement pad are electrically connected in the order stated. As a result, the gate electrodes where parasitic resistance occurs and the gate poly-silicon layer where built-in resistance occurs are connected in series between the second measurement pad and the gate pad. A resistance value of the overall gate resistance that is a combined resistance of the built-in resistance and the parasitic resistance may be measured by the second measurement pad.

69. 发明授权

US10886207B2 Semiconductor device 有权
公开(公告)号：US10886207B2
公开(公告)日：2021-01-05
申请号：US16383746
申请日：2019-04-15
申请人： DENSO CORPORATION
发明人： Takanori Kawashima , Hitoshi Ozaki , Takuya Isomura
IPC分类号： H01L23/498 , H01L23/482 , H01L23/31 , H01L23/00 , H01L25/07
摘要： A semiconductor device may be provided with a first semiconductor element including a plurality of signal electrodes, a second semiconductor element including a plurality of signal electrodes, an encapsulant encapsulating the first semiconductor element and the second semiconductor element, and a plurality of signal terminals protruding from the encapsulant. The plurality of signal terminals may include a first signal terminal, a second signal terminal and a common signal terminal. The first signal terminal may be connected with one of the signal electrodes of the first semiconductor element within the encapsulant. The second signal terminal may be connected with one of the signal electrodes of the second semiconductor element within the encapsulant. The common signal terminal may be, within the encapsulant, connected with another one of the signal electrodes of the first semiconductor element and another one of the signal electrodes of the second semiconductor element.

70. 发明授权

US10867923B2 Semiconductor device 有权
公开(公告)号：US10867923B2
公开(公告)日：2020-12-15
申请号：US16135234
申请日：2018-09-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Sang Hoon Ahn , Tae Soo Kim , Jong Min Baek , Woo Kyung You , Thomas Oszinda , Byung Hee Kim , Nae In Lee
IPC分类号： H01L23/532 , H01L21/768 , H01L23/482 , H01L23/522
CPC分类号： H01L23/53295 , H01L21/7682 , H01L23/4821 , H01L23/5329 , H01L23/5222 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2221/1042
摘要： A semiconductor device includes an element layer, a plurality of first interconnect lines on the element layer, a first insulation layer including carbon having a uniform concentration distribution between the first interconnect lines, a plurality of second interconnect lines spaced from the first interconnect lines, and a second insulation layer between the second interconnect lines. An air spacing is included between the second interconnect lines.

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