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61. 发明授权

US5041308A Method of coating silicon particles 失效
标题翻译：涂覆硅颗粒的方法
公开(公告)号：US5041308A
公开(公告)日：1991-08-20
申请号：US449776
申请日：1989-12-13
申请人： Makoto Kuramoto
发明人： Makoto Kuramoto
IPC分类号： B01J8/18 , B01J19/00 , B01J19/02 , C01B33/027 , C01B33/029 , C01B33/03
CPC分类号： C01B33/03 , B01J19/002 , B01J19/02 , B01J8/1836 , C01B33/027 , C01B33/029 , B01J2208/00044 , B01J2208/00407 , B01J2219/0204 , B01J2219/0272
摘要： An apparatus for heating polycrystalline silicon, in which polycrystalline silicon of semiconductor grade placed in the reaction vessel is directly heated by means of a heater outside of the reaction vessel where the inner surface of the reaction vessel is formed of graphite coated with highly pure silicon and having a thickness of 100 microns or more.
摘要翻译：一种用于加热多晶硅的装置，其中放置在反应容器中的半导体级的多晶硅通过反应容器外部的加热器直接加热，反应容器的内表面由涂覆有高纯硅的石墨形成，具有100微米或更大的厚度。

62. 发明授权

US5006317A Process for producing crystalline silicon ingot in a fluidized bed reactor 失效
标题翻译：在流化床反应器中生产结晶硅锭的方法
公开(公告)号：US5006317A
公开(公告)日：1991-04-09
申请号：US525900
申请日：1990-05-18
申请人： Angel Sanjurjo
发明人： Angel Sanjurjo
IPC分类号： B01J8/18 , B01J8/42 , C01B33/027 , C30B15/00 , C30B15/30
CPC分类号： C30B29/06 , B01J8/1836 , B01J8/42 , C01B33/027 , C30B15/30 , B01J2208/00274 , B01J2208/00398 , Y10T117/1028
摘要： Crystalline silicon ingots are produced directly from an internally heated bed of silicon particles.
摘要翻译：晶体硅锭直接从内部加热的硅颗粒床产生。

63. 发明授权

US4900411A Method of preparing a high-purity polycrystalline silicon using a microwave heating system in a fluidized bed reactor 失效
标题翻译：在流化床反应器中使用微波加热系统制备高纯度多晶硅的方法
公开(公告)号：US4900411A
公开(公告)日：1990-02-13
申请号：US925775
申请日：1986-10-30
申请人： Yoon Poong , Song Yongmok
发明人： Yoon Poong , Song Yongmok
IPC分类号： C01B33/02 , B01J8/42 , C01B33/027 , C01B33/029 , C01B33/03 , C23C16/24 , C23C16/442 , H01L21/205
CPC分类号： B01J8/42 , C01B33/029 , C01B33/03
摘要： Method and apparatus for the preparation of high-purity polycrystalline silicon deposited by thermal decomposition or hydrogen reduction of a gaseous halogenated silicon on high-purity silicon particles in a fluidized bed reactor heated by microwave.

64. 发明授权

US4820587A Polysilicon produced by a fluid bed process 失效
标题翻译：通过流化床工艺生产的多晶硅
公开(公告)号：US4820587A
公开(公告)日：1989-04-11
申请号：US4116
申请日：1987-01-16
申请人： Marcelian F. Gautreaux , Robert H. Allen
发明人： Marcelian F. Gautreaux , Robert H. Allen
IPC分类号： C01B33/02 , B01J8/26 , C01B33/027 , C01B33/029 , B32B5/16 , B05D7/00
CPC分类号： B01J8/26 , C01B33/027 , C01B33/029 , Y10S117/912 , Y10T428/2991 , Y10T428/2995
摘要： Silicon of high purity is made by decomposing silane in a fluidized bed reactor. To obtain good process economics, two modes of operation are used. In a first mode, the reactor is operated under high productivity conditions which also result in co-production of silicon dust or fines. The dust on the particles can cause problems in handling. For example, in bagging the particles, or removing the particles from a bag, the dust can become airborne from the larger particle surfaces and form an objectionable cloud of silicon dust. The invention provides a method for uniting dust to the larger silicon particles. In a second process mode, a thin (0.1-5.0 micron) layer of high purity silicon is deposited on the dust laden particles. This second mode is most preferably carried out by (a) treating the dust-laden particles with a deposition gas comprising 1 to 5 mole % silicon admixed with an inert carrier gas such as hydrogen, (b) in a fluidized bed reactor, and (c) at a process temperature of 620.degree.650.degree. C. The product polysilicon is composed of free flowing, approximately spherical particles having a size distribution of 150-1500 microns, an average size of 650-750 microns and has a particle bulk density of 2.3 grams per cubic centimeter, a bulk density of about 1360 kg/m.sup.3 and a silicon surface dust content of less than about 0.08 wt. %.
摘要翻译：高纯度硅通过在流化床反应器中分解硅烷来制备。为了获得良好的工艺经济性，使用了两种操作模式。在第一模式中，反应器在高生产率条件下运行，这也导致硅粉或细粉的共同生产。颗粒上的灰尘会导致处理问题。例如，在包装颗粒或从袋中去除颗粒时，灰尘可以从较大颗粒表面飞散，并形成令人不快的硅粉尘云。本发明提供了一种将灰尘与较大的硅颗粒结合的方法。在第二种工艺模式中，将薄（0.1-5.0微米）的高纯度硅层沉积在载有尘埃的颗粒上。该第二模式最好通过以下步骤进行：（a）用包含1至5摩尔％硅的惰性载气如氢气沉积的沉积气体处理含灰尘的颗粒，（b）在流化床反应器中和（ c）在620℃至650℃的过程温度下。产物多晶硅由自由流动的大致球形的颗粒组成，其尺寸分布为150-1500微米，平均尺寸为650-750微米，颗粒体积密度为 2.3克/立方厘米，堆积密度约1360公斤/立方米，硅表面粉尘含量小于约0.08重量％。％。

65. 发明授权

US4784840A Polysilicon fluid bed process and product 失效
标题翻译：多晶硅流化床工艺及产品
公开(公告)号：US4784840A
公开(公告)日：1988-11-15
申请号：US114453
申请日：1987-10-28
申请人： Marcelian F. Gautreaux , Robert H. Allen
发明人： Marcelian F. Gautreaux , Robert H. Allen
IPC分类号： B01J8/26 , C01B33/027 , C01B33/029 , C01B33/02 , B05D7/00
CPC分类号： C01B33/027 , B01J8/26 , C01B33/029
摘要： Silicon of high purity is used in making semiconductor devices. Silicon for this purpose is made by decomposing silane in a fluidized bed reactor. This process entails thermal decomposition of silane to deposit additional metallic silicon on particles of high purity silicon. To obtain good process economics, two modes of operation are used. In a first mode, the reactor is operated under high productivity conditions which also result in co-production of silicon dust or fines. Some of the dust is deposited on the product silicon particles and some of it is elutriated by gas flow in the reactor and removed through an exit point near the top of the reactor apparatus. The dust on the particles can cause problems in handling. For example, in bagging the particles, or removing the particles from a bag, the dust can become airborne from the larger particle surfaces and form an objectionable cloud of silicon dust. The invention provides a method for uniting dust to the larger silicon particles, and also provides the improved silicon particles produced by the process. The improvement comprises a second mode, viz depositing a thin (0.1-5.0 micron) layer of high purity silicon on the dust laden particles. This second mode is most preferably carried out by (a) treating the dust-laden particles with a deposition gas comprising 1 to 5 mole % silicon admixed with an inert carrier gas such as hydrogen, (b) in a fluidized bed reactor, and (c) at a process temperature of 620.degree.-650.degree. C. By this method the amount of readily removable dust can be considerably reduced, forming an improved product tht is better suited for commerce. The process can be extended to the use of other silicon-containing gases such as dichlorosilane and trichlorosilane by selecting reaction conditions suitable for use with those substances.
摘要翻译：高纯度硅用于制造半导体器件。为此目的的硅通过在流化床反应器中分解硅烷来制备。该方法需要硅烷的热分解，以在高纯度硅颗粒上沉积额外的金属硅。为了获得良好的工艺经济性，使用了两种操作模式。在第一模式中，反应器在高生产率条件下运行，这也导致硅粉或细粉的共同生产。一些灰尘沉积在产品硅颗粒上，其中一些灰尘通过反应器中的气流被淘汰，并通过靠近反应器装置顶部的出口点去除。颗粒上的灰尘会导致处理问题。例如，在包装颗粒或从袋中去除颗粒时，灰尘可以从较大颗粒表面飞散，并形成令人不快的硅粉尘云。本发明提供了一种将灰尘与更大的硅颗粒结合的方法，并且还提供了由该方法制备的改进的硅颗粒。该改进包括第二模式，即在载有尘埃的颗粒上沉积薄（0.1-5.0微米）的高纯度硅层。该第二模式最好通过以下步骤进行：（a）用包含1至5摩尔％硅的惰性载气如氢气沉积的沉积气体处理含灰尘的颗粒，（b）在流化床反应器中和（ c）在620〜-650℃的加工温度下，通过这种方法可以大大减少容易移除的粉尘的量，形成改进的产品更适合商业化。通过选择适合与这些物质一起使用的反应条件，该方法可以扩展到使用其它含硅气体如二氯硅烷和三氯硅烷。

66. 发明授权

US4655827A Process for the reduction of fluorides of silicon, titanium, zirconium or uranium 失效
标题翻译：用于还原硅，钛，锆或铀的氟化物的方法
公开(公告)号：US4655827A
公开(公告)日：1987-04-07
申请号：US758594
申请日：1985-07-24
申请人： Angel Sanjurjo , Kenneth M. Sancier
发明人： Angel Sanjurjo , Kenneth M. Sancier
IPC分类号： C01B33/02 , C01B33/027 , C01B33/033 , C22B34/10 , C22B34/12 , C22B34/14 , C22B60/00 , C22B60/02 , C25C3/00 , C01B3/00 , C01D3/00
CPC分类号： C01B33/033 , C22B34/1245 , C22B34/1259 , C22B34/1272 , C22B34/14 , C22B60/0213 , C22B60/023 , Y02P10/212
摘要： A process is disclosed for producing silicon, titanium, zirconium or uranium by reduction of a fluoro compound with sodium followed by leaching with an aqueous alkaline earth metal chloride and recovery of the sodium metal through electrolytic reduction.
摘要翻译：公开了通过用钠还原氟化合物然后用碱土金属氯化物浸出并通过电解还原回收钠金属来生产硅，钛，锆或铀的方法。

67. 发明授权

US4642228A Fluxing system for reactors for production of silicon 失效
标题翻译：用于生产硅的反应堆的助焊剂系统
公开(公告)号：US4642228A
公开(公告)日：1987-02-10
申请号：US758597
申请日：1985-07-24
申请人： Angel Sanjurjo , Kenneth M. Sancier
发明人： Angel Sanjurjo , Kenneth M. Sancier
IPC分类号： C01B33/02 , C01B33/027 , C01B33/033
CPC分类号： C01B33/033
摘要： A process is disclosed for the production of elemental silicon that utilizes a non-reactive condensible gas as a means for purging the reactor of ambient air prior to the introduction of an alkali metal and a silicon tetrahalide.
摘要翻译：公开了用于生产元素硅的方法，其利用非反应性可冷凝气体作为在引入碱金属和四卤化硅之前净化环境空气的反应器的手段。

68. 发明授权

US4102767A Arc heater method for the production of single crystal silicon 失效
标题翻译：电弧加热器方法用于生产单晶硅
公开(公告)号：US4102767A
公开(公告)日：1978-07-25
申请号：US787635
申请日：1977-04-14
申请人： Robert Mazelsky , Maurice G. Fey , Francis J. Harvey
发明人： Robert Mazelsky , Maurice G. Fey , Francis J. Harvey
IPC分类号： C01B33/02 , C01B33/027 , C01B33/03 , C01B33/033 , C30B11/12 , C30B15/00 , C30B15/02 , C30B15/06 , C30B15/08 , C30B29/06 , H05B7/18 , B01K1/00 , C04B35/00 , H01L3/00
CPC分类号： C01B33/03 , C01B33/027 , C01B33/033 , C30B11/12 , C30B15/02 , C30B15/06 , C30B15/08 , H05B7/185 , Y10S117/904 , Y10S117/905 , Y10S117/91
摘要： A method for the production of single crystal silicon characterized by the steps of feeding into an arc heater a quantity of uncontaminated silicon halide to react with hydrogen or a metal reductant, such as sodium, to produce reaction products including liquid silicon and a gaseous salt of the reductant, depositing the liquid silicon on a downwardly inclined surface, and attaching a single seed crystal of silicon to the liquid silicon and withdrawing the single seed crystal from the liquid silicon so as to propagate a large single crystal.
摘要翻译：一种用于生产单晶硅的方法，其特征在于以下步骤：将一定数量的未被污染的卤化硅与氢或金属还原剂如钠反应，以产生包括液态硅和还原剂，将液态硅沉积在向下倾斜的表面上，并将单个晶种的硅结合到液态硅上，并从液态硅中取出单个晶种，以便传播大的单晶。

69. 发明授权

US3899557A Hollow semiconductor bodies and method of producing the same 失效
标题翻译：中空半导体器件及其制造方法
公开(公告)号：US3899557A
公开(公告)日：1975-08-12
申请号：US41075873
申请日：1973-10-29
申请人： SIEMENS AG
发明人： DIETZE WOLFGANG
IPC分类号： C01B33/02 , C01B33/027 , C23C16/01 , C23C16/22 , C23C16/44 , C30B29/60 , C30B31/10 , H01L21/22 , C23C11/06
CPC分类号： C23C16/01 , C23C16/22 , C30B31/10 , Y10S148/007 , Y10S148/025 , Y10S148/073 , Y10S264/57
摘要： Hollow semiconductor bodies having an outer surface composed of a doped semiconductor material and an inner surface composed of a pure semiconductor material are formed by sequential deposition from a gaseous thermally decomposable semiconductor compound onto a heated carrier member. The multi-layer hollow semiconductor bodies are directly heatable during diffusion of dopants into semiconductor elements.
摘要翻译：通过从气态热分解半导体化合物到加热的载体构件的顺序沉积，形成具有由掺杂半导体材料构成的外表面和由纯半导体材料组成的内表面的空心半导体本体。多层中空半导体体在掺杂剂扩散到半导体元件期间是可直接加热的。

70. 发明授权

US3867497A Process of making hollow bodies or tubes of semi-conducting materials 失效
标题翻译：制造中空体或半导体材料管的工艺
公开(公告)号：US3867497A
公开(公告)日：1975-02-18
申请号：US34580573
申请日：1973-03-28
申请人： WACKER CHEMITRONIC
发明人： TEICH HORST , GOPPINGER ALOIS
IPC分类号： C01B33/02 , C01B33/027 , C23C16/01 , C23C16/24 , C23C16/44 , H01L21/205 , H01L21/22 , B01J17/28 , B29C13/04
CPC分类号： C23C16/01 , C23C16/24 , Y10S148/025 , Y10S148/073 , Y10S148/122
摘要： Process for making semi-conducting hollow bodies by thermal splitting of volatile semi-conducting silicon compounds comprising passing the volatile silicon compounds over a carbon mold or a carbon-coated mold, and depositing thereon in three successive stages, SiO2, amorphous silicon, and polycrystalline silicon by adjustment of the temperature in each stage, and, after cooling, lifting the polycrystalline silicon body off the mold. The invention also comprises the polycrystalline Si body so made.
摘要翻译：通过热分解挥发性半导体硅化合物制造半导体中空体的方法，包括使挥发性硅化合物通过碳模或碳涂覆的模具，并在其上沉积三个阶段，SiO 2，非晶硅和多晶通过调节各阶段的温度，并且在冷却之后将多晶硅体从模具上提起。本发明还包括如此制成的多晶Si体。

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