专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20150109062A1 MAGNETORESISTIVE EFFECT OSCILLATOR 有权
标题翻译：磁感应效应振荡器
公开(公告)号：US20150109062A1
公开(公告)日：2015-04-23
申请号：US14515864
申请日：2014-10-16
申请人： TDK CORPORATION
发明人： Tsuyoshi SUZUKI , Eiji SUZUKI
IPC分类号： H03B15/00 , H03B7/06
CPC分类号： H03B15/006 , H03B15/00
摘要： A magnetoresistive effect oscillator is provided which can realize a rise or a fall of oscillation at a higher speed. In the magnetoresistive effect oscillator, at the rise, a current having a first current density, which is larger than a critical current density for oscillation, is applied, and thereafter a current having a second current density, which is less than the current density corresponding to the first current density and not less than the critical current density for oscillation, is applied such that the magnetoresistive effect element oscillates at a predetermined frequency. In the magnetoresistive effect oscillator, at the fall, starting from the state where a first current density is applied to hold the magnetoresistive effect element in an oscillating condition, a current having a second current density and having polarity reversed to that of the first current density is applied such that the oscillation disappears.
摘要翻译：提供了一种能够以更高速度实现振荡的上升或下降的磁阻效应振荡器。在磁阻效应振荡器中，在上升时，施加具有比用于振荡的临界电流密度大的第一电流密度的电流，之后具有小于对应于电流密度的第二电流密度的电流施加到第一电流密度并且不小于用于振荡的临界电流密度，使得磁阻效应元件以预定频率振荡。在磁阻效应振荡器中，在从施加第一电流密度的状态开始的磁阻效应振荡器中，将磁阻效应元件保持在振荡状态，具有第二电流密度并具有与第一电流密度相反的极性的电流以使得振荡消失。

62. 发明授权

US08871365B2 High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications 有权
标题翻译：用于磁性器件应用的具有面外各向异性的高热稳定性参考结构
公开(公告)号：US08871365B2
公开(公告)日：2014-10-28
申请号：US13406972
申请日：2012-02-28
申请人： Yu-Jen Wang , Witold Kula , Ru Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru Ying Tong , Guenole Jan
IPC分类号： H01F10/32 , G01R33/09 , G11C11/15 , G11B5/39
CPC分类号： H01L43/12 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/66 , G11B5/84 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/305 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.
摘要翻译：通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

63. 发明授权

US08837087B2 Thin magnetic film, method of manufacturing the same, and high frequency oscillator, magnetic head, magnetic recording medium, and magnetic recording/reproducing apparatus using thin magnetic film 有权
标题翻译：薄磁膜及其制造方法，以及高频振荡器，磁头，磁记录介质和使用薄磁膜的磁记录/再现装置
公开(公告)号：US08837087B2
公开(公告)日：2014-09-16
申请号：US13946938
申请日：2013-07-19
申请人： Kabushiki Kaisha Toshiba , Tohoku University , Showa Denko K.K.
发明人： Akihiko Takeo , Akira Kikitsu , Tomoyuki Maeda , Migaku Takahashi , Shin Saito , Ken Inoue , Gohei Kurokawa
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/235 , G11B5/3146 , G11B5/656 , G11B5/732 , G11B5/7325 , G11B2005/0024 , H01F10/30 , H01F10/3286 , H01F10/329 , H01F41/30 , H03B15/006 , H03B28/00
摘要： According to one embodiment, there is provided a thin magnetic film having a negative anisotropy of −6×106 erg/cm3 or less and including, on at least a nonmagnetic substrate, at least one seed layer made of a metal or metal compound, a ruthenium underlayer for controlling the orientation of an immediately overlying layer, and a magnetic layer having negative anisotropy in the normal line direction perpendicular to a surface of the magnetic layer and mainly containing Co and Ir, wherein the additive element concentration of Ir in the magnetic layer is 10 (inclusive) to 45 (inclusive) at %.
摘要翻译：根据一个实施方案，提供了一种具有-6×106erg / cm 3或更小的负各向异性的薄磁膜，并且在至少一个非磁性基底上至少包括由金属或金属化合物制成的至少一个晶种层，钌底层，用于控制直接上覆层的取向，以及在与磁性层的表面垂直的法线方向上具有负各向异性的磁性层，主要含有Co和Ir，其中磁性层中的添加元素浓度为10（含）至45（含）％。

64. 发明授权

US08766629B2 Frequency conversion apparatus and frequency conversion method 有权
标题翻译：变频装置和变频方式
公开(公告)号：US08766629B2
公开(公告)日：2014-07-01
申请号：US12606457
申请日：2009-10-27
申请人： Hiroki Maehara
发明人： Hiroki Maehara
IPC分类号： G11C11/02 , G01R33/02 , H03D7/00
CPC分类号： H03B15/006
摘要： To provide a frequency conversion device which uses a magneto-resistive device and thereby can correspond to a Si-based MMIC and a GaAs-based MMIC. A frequency conversion apparatus according to the present invention includes: a frequency conversion device made of a magneto-resistive device including a magnetic free layer, an intermediate layer, and a magnetic pinned layer; a magnetic field applying mechanism for applying a magnetic field to the frequency conversion device; a local oscillator for applying a local oscillation signal to the frequency conversion device; and an input terminal electrically connected to the frequency conversion device, and used to input an external input signal.
摘要翻译：提供一种使用磁阻装置的频率转换装置，从而可以对应于基于Si的MMIC和基于GaAs的MMIC。根据本发明的变频装置包括：由包括磁性自由层，中间层和磁性固定层的磁阻装置构成的变频装置; 用于向所述变频装置施加磁场的磁场施加机构; 用于将本地振荡信号施加到所述变频装置的本地振荡器; 以及电连接到所述变频装置的输入端子，用于输入外部输入信号。

65. 发明申请

US20140070896A1 MAGNETIC FIELD FEEDBACK BASED SPINTRONIC OSCILLATOR 有权
标题翻译：基于磁场反馈的旋转振荡器
公开(公告)号：US20140070896A1
公开(公告)日：2014-03-13
申请号：US14023155
申请日：2013-09-10
申请人： Indian Institute of Technology Bombay
发明人： Ashwin Tulapurkar , Chakkalakal Tomy , Yoshishige Suzuki , Dinesh Kumar , Katsunori Konishi
IPC分类号： H03B15/00
CPC分类号： H03B15/006
摘要： The embodiments herein relate to a magnetic field feedback based spintronic microwave oscillator driven by DC current. The microwave oscillator works based on a magnetic tunnel junction structure connected to a feedback waveguide. Any fluctuation in the magnetization direction of free magnetization layer of MTJ drives an oscillating current through the feedback waveguide which in turn exerts an oscillating magnetic field on the free layer and amplifies the magnetization fluctuations. If the DC current passing through the MTJ is more than a critical value, continuous processing states of the magnetization are possible. The critical current is independent of the thickness and magnetization of the free layer. A MTJ can be driven into spontaneous oscillations with DC current and magnetic field feedback circuit and can act as a spintronic microwave oscillator.
摘要翻译：本文的实施例涉及由DC电流驱动的基于磁场反馈的自旋电子微波振荡器。微波振荡器基于连接到反馈波导的磁隧道结结构工作。 MTJ的自由磁化层的磁化方向的任何波动驱动通过反馈波导的振荡电流，反馈波导又在自由层上施加振荡磁场并放大磁化波动。如果通过MTJ的直流电流大于临界值，则磁化的连续处理状态是可能的。临界电流与自由层的厚度和磁化强度无关。 MTJ可以用直流电流和磁场反馈电路驱动到自发振荡中，并可作为自旋电子微波振荡器。

66. 发明授权

US08569852B2 Magnetic oscillation element and spin wave device 有权
标题翻译：磁振动元件和自旋波装置
公开(公告)号：US08569852B2
公开(公告)日：2013-10-29
申请号：US13238631
申请日：2011-09-21
申请人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
发明人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
IPC分类号： H01F7/02 , H01L29/82 , G11C11/15
CPC分类号： H01F10/329 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3295 , H01L43/08 , H03B15/006
摘要： According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.
摘要翻译：根据一个实施例，磁振荡元件包括依次堆叠的第一电极/第二磁性层/非磁性间隔层/第一磁性层/第二电极。第一磁性层具有可变的磁化方向。第二磁性层具有固定的磁化方向。连接第一和第二电极的方向上的第一磁性层的厚度大于第一磁性层的自旋穿透深度的2倍。第一磁性层的厚度小于第二电极的最大宽度。当沿该方向观察时，第一磁性层具有设置在第一表面之外的边缘部分。边缘部分在与第二电极的边缘的切线垂直的方向上的宽度不小于第一磁性层的交换长度。

67. 发明申请

US20130278346A1 MAGNETIC OSCILLATOR 有权
标题翻译：磁振荡器
公开(公告)号：US20130278346A1
公开(公告)日：2013-10-24
申请号：US13923062
申请日：2013-06-20
申请人： Tazumi NAGASAWA , Kiwamu KUDO , Rie SATO , Koichi MIZUSHIMA
发明人： Tazumi NAGASAWA , Kiwamu KUDO , Rie SATO , Koichi MIZUSHIMA
IPC分类号： H03B15/00
CPC分类号： H03B15/006 , G11B5/3903 , G11B2005/0002 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic oscillator includes a layered film and a pair of electrodes. The layered film includes a first ferromagnetic layer, an insulating layer stacked on the first ferromagnetic layer, and a second ferromagnetic layer stacked on the insulating layer. The pair of electrodes is configured to apply a current to the layered film in a direction perpendicular to a film surface of the layered film. Regions having different resistance area products are provided between the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁振荡器包括分层膜和一对电极。层叠膜包括第一铁磁层，堆叠在第一铁磁层上的绝缘层和堆叠在绝缘层上的第二铁磁层。一对电极被配置为在与层叠膜的膜表面垂直的方向上向层叠膜施加电流。具有不同电阻面积的区域设置在第一铁磁层和第二铁磁层之间。

68. 发明授权

US08525601B2 Oscillators using magnetic domain wall and methods of operating the same 有权
标题翻译：振荡器采用磁畴壁和操作方法相同
公开(公告)号：US08525601B2
公开(公告)日：2013-09-03
申请号：US12654703
申请日：2009-12-29
申请人： Sung-chul Lee , Mathias Klaui , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae , Jin-seong Heo
发明人： Sung-chul Lee , Mathias Klaui , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Ji-young Bae , Jin-seong Heo
IPC分类号： H03B17/00
CPC分类号： H03B15/006 , Y10T428/1121
摘要： An oscillator generates a signal using precession of a magnetic moment of a magnetic domain wall. The oscillator includes a free layer having the magnetic domain wall and a fixed layer corresponding to the magnetic domain wall. A non-magnetic separation layer is interposed between the free layer and the fixed layer.
摘要翻译：振荡器使用磁畴壁的磁矩的进动产生信号。振荡器包括具有磁畴壁的自由层和对应于磁畴壁的固定层。非磁性分离层介于自由层和固定层之间。

69. 发明授权

US08488373B2 Spin injection layer robustness for microwave assisted magnetic recording 有权
公开(公告)号：US08488373B2
公开(公告)日：2013-07-16
申请号：US13200844
申请日：2011-10-03
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Hitoshi Iwasaki , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： G11C11/00
CPC分类号： H03B15/006 , C23C14/025 , C23C14/165 , G11C5/005 , G11C11/161 , Y10T428/1114
摘要： A spin transfer (torque) oscillator (STO) with a non-magnetic spacer formed between a spin injection layer (SIL) and a field generation layer (FGL), and with an interfacial layer comprised of Fe(100-V)CoV where v is from 5 to 100 atomic % formed between the SIL and non-magnetic spacer is disclosed. A composite seed layer made of Ta and a metal layer having a fcc(111) or hcp(001) texture is used to enhance perpendicular magnetic anisotropy (PMA) in the STO device. The interfacial layer quenches SIL oscillations and thereby stabilizes the SIL against FGL oscillations. The interfacial layer preferably has a thickness from 5 to 50 Angstroms and enhances amplitude (dR/R) in the STO device. The STO device may have a top SIL or bottom SIL configuration. The SIL is typically a laminated structure such as (Co/Ni)X where x is between 5 and 50.

70. 发明申请

US20130169371A1 SPIN TRANSFER OSCILLATOR 有权
标题翻译：旋转振荡器
公开(公告)号：US20130169371A1
公开(公告)日：2013-07-04
申请号：US13702413
申请日：2011-06-09
申请人： Claire Baraduc , Bernard Dieny , Christophe Thirion , Nicolas De Mestier Du Bourg
发明人： Claire Baraduc , Bernard Dieny , Christophe Thirion , Nicolas De Mestier Du Bourg
IPC分类号： H03B28/00 , H01F10/32
CPC分类号： H03B28/00 , B82Y25/00 , H01F10/32 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H03B15/006
摘要： A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency.
摘要翻译：一种包括具有至少两个磁性层的磁性堆叠的自旋转移振荡器，所述两个磁性层中的至少一个是具有可变方向磁化的振荡层，以及电流供给装置，其被配置为使电子流的电流垂直于磁栈的平面。磁性堆叠包括在振荡层的表面的电平上产生电流的不均匀性的装置，并且选择由供电装置提供的电流的强度，使得振荡层的磁化具有一致的磁性结构，磁性配置整体振荡在同一基频。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式