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61. 发明申请

US20140217853A1 PIEZOELECTRIC GENERATOR 有权
标题翻译：压电式发电机
公开(公告)号：US20140217853A1
公开(公告)日：2014-08-07
申请号：US13757897
申请日：2013-02-04
申请人： RESEARCH IN MOTION LIMITED
发明人： Peter Mankowski
IPC分类号： H01L41/047 , H02N2/18
CPC分类号： H02N2/18 , H01L41/0475 , H01L41/087 , H01L41/113 , H01L41/18 , H01L41/187 , H01L41/1871 , H01L41/1876
摘要： The present disclosure provides an ionic ring comprising a number of piezoelectric elements, a piezoelectric device including the ionic ring, and a piezoelectric generator including the ionic ring and host devices incorporating the piezoelectric generator. The piezoelectric generator can be used to generate energy on a portable electronic device in response to mechanical deformation. The generated energy can be used instead of a battery of the portable electronic device or can be used to charge the battery.
摘要翻译：本公开提供了包括多个压电元件的离子环，包括离子环的压电器件，以及包括离子环的压电发生器和结合有压电发生器的主体器件。压电发生器可以用于响应于机械变形在便携式电子设备上产生能量。可以使用所产生的能量来代替便携式电子设备的电池，或者可以使用所产生的能量来对电池充电。

62. 发明申请

US20140117810A1 BOUNDARY ACOUSTIC WAVE DEVICE 有权
标题翻译：边界声波装置
公开(公告)号：US20140117810A1
公开(公告)日：2014-05-01
申请号：US13845205
申请日：2013-03-18
申请人： Murata Manufacturing Co., Ltd.
发明人： Takashi YAMANE , Takeshi Nakao
IPC分类号： H01L41/18
CPC分类号： H01L41/18 , H03H9/0222 , H03H9/02559 , H03H9/02574
摘要： A boundary acoustic wave device includes an LiTaO3 piezoelectric substrate3, a first dielectric medium layer disposed on the piezoelectric substrate, a second dielectric medium layer disposed on the first medium layer and having a sound velocity different from the first medium layer, and an interdigital electrode disposed at the boundary between the piezoelectric substrate and the first medium layer. The sound velocity of the first medium layer is less than the sound velocity of LiTaO3. The sound velocity of the second medium layer is greater than the sound velocity of LiTaO3. The inequality (h/λ)×a≦0.05 is satisfied, where H is the thickness of the first medium layer, h is the thickness of the interdigital electrode, λ is the period of electrode fingers of the interdigital electrode, and a is the ratio of the density of a metal of the interdigital electrode to the density of Au.
摘要翻译：弹性边界波装置包括LiTaO3压电基片3，设置在压电基片上的第一介电层，设置在第一介质层上并具有与第一介质层不同的声速的第二介质介质层，在压电基板和第一介质层之间的边界处。第一介质层的声速小于LiTaO3的声速。第二介质层的声速大于LiTaO3的声速。满足不等式（h /λ）×a＆nlE; 0.05，其中H是第一介质层的厚度，h是叉指电极的厚度，λ是叉指电极的电极指的周期，a是指数电极的金属密度与Au的密度之比。

63. 发明申请

US20140087509A1 MEMS-BASED CANTILEVER ENERGY HARVESTER 有权
标题翻译：基于MEMS的CANTILEVER能量收割机
公开(公告)号：US20140087509A1
公开(公告)日：2014-03-27
申请号：US14094590
申请日：2013-12-02
申请人： Texas Micropower, Inc. , The Board of Regents of the University of Texas System
发明人： Erika Fuentes-Fernandez , Pradeep Shah , Wardia Mechtaly-Debray , Bruce E. Gnade
IPC分类号： B81C1/00
CPC分类号： H01L41/1136 , B81C1/00388 , B81C1/00539 , H01L41/0477 , H01L41/083 , H01L41/18 , H01L41/31 , H01L41/332 , H02N2/181 , H02N2/186
摘要： The claimed invention is directed to integrated energy-harvesting piezoelectric cantilevers. The cantilevers are fabricated using sol-gel processing using a sacrificial poly-Si seeding layer. Improvements in film microstructure and electrical properties are realized by introducing a poly-Si seeding layer and by optimizing the poling process.
摘要翻译：所要求保护的发明涉及集成的能量收集压电悬臂。使用溶胶 - 凝胶加工制造悬臂，使用牺牲多晶硅接种层。通过引入多晶硅晶种层并优化极化过程，可以实现薄膜微结构和电性能的改善。

64. 发明申请

US20130335166A1 DEVICES HAVING A TUNABLE ACOUSTIC PATH LENGTH AND METHODS FOR MAKING SAME 有权
标题翻译：具有可控气道长度的装置及其制造方法
公开(公告)号：US20130335166A1
公开(公告)日：2013-12-19
申请号：US13969056
申请日：2013-08-16
申请人： Cymatics Laboratories Corp.
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H01L41/083 , H03H9/38 , H01L41/18
CPC分类号： H01L41/083 , H01L41/18 , H03H9/0095 , H03H9/15 , H03H9/171 , H03H9/205 , H03H9/38 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2009/02173
摘要： A tunable acoustic resonator device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different and, consequently, the different levels of applied stress are used to tune the acoustic resonator device. Compared with the tunable resonator device consisting of only tunable crystal medium, a device having both the piezoelectric and tunable crystal medium has advantages such as larger inherent bandwidth and less nonlinearity with AC signals. The device also requires a smaller applied stress (i.e. bias voltage) to achieve the required frequency tuning.
摘要翻译：可调声谐振器装置具有作为第一薄膜层的压电介质和作为第二薄膜层的可调晶体介质。可调谐晶体介质在相对较低的施加应力条件下在工作温度范围内具有第一声学行为，并且在施加应力相对较高的条件下具有第二声学行为。声学行为基本上不同，因此，施加的应力的不同水平被用于调谐声谐振器装置。与仅由可调谐晶体介质组成的可调谐谐振器相比，具有压电和可调谐晶体介质的器件具有诸如固有带宽更大和AC信号的非线性较小的优点。器件还需要较小的施加应力（即偏置电压）来实现所需的频率调谐。

65. 发明授权

US08601657B2 Method for manufacturing piezoelectric device 有权
标题翻译：制造压电元件的方法
公开(公告)号：US08601657B2
公开(公告)日：2013-12-10
申请号：US13473937
申请日：2012-05-17
申请人： Korekiyo Ito
发明人： Korekiyo Ito
IPC分类号： H04R17/10 , B32B38/10
CPC分类号： H01L41/053 , H01L41/18 , H01L41/313 , H03H3/02 , H03H3/08 , H03H9/02007 , H03H9/02574 , H03H9/05 , H03H2003/021 , Y10T29/42 , Y10T29/49126 , Y10T156/1153
摘要： In a piezoelectric device and a method of manufacturing thereof, after an ion implanted portion is formed in a piezoelectric single crystal substrate by implantation of hydrogen ions, an interlayer of a metal is formed on a rear surface of the piezoelectric single crystal substrate. In addition, a support member is bonded to the piezoelectric single crystal substrate with the interlayer interposed therebetween. A composite piezoelectric body in which the ion implanted portion is formed is heated at about 450° C. to about 700° C. to oxidize the metal of the interlayer so as to decrease the conductivity thereof. Accordingly, the conductivity of the interlayer is decreased, so that a piezoelectric device having excellent resonance characteristics is provided.
摘要翻译：在压电器件及其制造方法中，在通过注入氢离子在压电单晶衬底中形成离子注入部分之后，在压电单晶衬底的后表面上形成金属中间层。此外，支撑构件与介于其间的夹层结合到压电单晶衬底。其中形成离子注入部分的复合压电体在约450℃至约700℃下加热，以中间层的金属氧化，从而降低其导电性。因此，中间层的导电性降低，提供了具有优异的谐振特性的压电元件。

66. 发明授权

US08591011B2 Piezoelectric element, actuator device, liquid ejecting head, and liquid ejecting apparatus 有权
标题翻译：压电元件，致动器装置，液体喷射头和液体喷射装置
公开(公告)号：US08591011B2
公开(公告)日：2013-11-26
申请号：US13683591
申请日：2012-11-21
申请人： Seiko Epson Corporation
发明人： Masato Shimada , Xin-shan Li
IPC分类号： B41J2/045
CPC分类号： B41J2/14201 , B41J2/14233 , B41J2002/14241 , B41J2002/14419 , B41J2002/14491 , H01L41/0477 , H01L41/09 , H01L41/0973 , H01L41/18 , H01L41/1875 , H01L41/1876
摘要： A piezoelectric element includes a lower electrode film disposed on a substrate, a piezoelectric layer 70 disposed on the lower electrode film, a upper electrode film 80 disposed on the piezoelectric layer 70, wherein the piezoelectric layer 70 is formed of a plurality of columnar grains 70a, and the upper electrode film 80 conforms to the surface shape of each of the grains 70a of the piezoelectric layer 70.
摘要翻译：压电元件包括设置在基板上的下电极膜，设置在下电极膜上的压电层70，设置在压电层70上的上电极膜80，其中压电层70由多个柱状晶粒70a 上电极膜80与压电体层70的各个粒子70a的表面形状一致。

67. 发明申请

US20130307372A1 PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING PIEZOELECTRIC DEVICE 有权
标题翻译：压电元件及制造压电元件的方法
公开(公告)号：US20130307372A1
公开(公告)日：2013-11-21
申请号：US13850520
申请日：2013-03-26
申请人： Murata Manufacturing Co., Ltd.
发明人： Korekiyo ITO
IPC分类号： H01L41/27 , H01L41/053
CPC分类号： H01L41/253 , H01L21/02694 , H01L41/0536 , H01L41/081 , H01L41/0815 , H01L41/0838 , H01L41/18 , H01L41/27 , H01L41/277 , H01L41/297 , H01L41/312 , H01L41/332 , H01L41/47 , H03H3/02 , H03H3/08 , H03H9/02574 , H03H9/059 , H03H9/173
摘要： In a method of manufacturing a piezoelectric device, during an isolation formation step, a supporting substrate has a piezoelectric thin film formed on its front with a compressive stress film present on its back. The compressive stress film compresses the surface on a piezoelectric single crystal substrate side of the supporting substrate, and the piezoelectric thin film compresses the back of the supporting substrate, which is opposite to the surface on the piezoelectric single crystal substrate side. Thus, the compressive stress produced by the compressive stress film and that produced by the piezoelectric thin film are balanced in the supporting substrate, which causes the supporting substrate to be free of warpage and remain flat. A driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film.
摘要翻译：在压电元件的制造方法中，在隔离形成工序中，支撑基板的前面形成有压电薄膜，其背面存在压应力膜。压缩应力膜压缩支撑基板的压电单晶基板侧的表面，压电薄膜压缩与压电单晶基板侧的表面相反的支撑基板的背面。因此，压缩应力膜产生的压电应力和由压电薄膜产生的压缩应力在支撑基板上平衡，这导致支撑基板没有翘曲并保持平坦。在隔离形成步骤中诱导隔离的驱动力是将植入的离子化元素气化，而不是由压电薄膜产生的隔离面的压缩应力。

68. 发明申请

US20130221806A1 NANO-PIEZOELECTRIC GENERATOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：纳米压电发生器及其制造方法
公开(公告)号：US20130221806A1
公开(公告)日：2013-08-29
申请号：US13774039
申请日：2013-02-22
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jung-inn SOHN , Seung-nam CHA
IPC分类号： H01L41/113 , H01L41/29 , H01L41/047
CPC分类号： H01L41/113 , H01L41/047 , H01L41/0478 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/29 , H02N2/18
摘要： A nano-piezoelectric generator includes a first electrode and a second electrode, at least one nano-piezoelectric unit, formed of a semiconductor piezoelectric material having a nano-structure, disposed between the first and the second electrodes, and an interlayer, formed of an insulating material, disposed between the first electrode and the at least one nano-piezoelectric unit.
摘要翻译：纳米压电发电机包括第一电极和第二电极，至少一个纳米压电单元，由具有纳米结构的半导体压电材料形成，设置在第一和第二电极之间;以及夹层，由绝缘材料，设置在第一电极和至少一个纳米压电单元之间。

69. 发明申请

US20130211251A1 HIGH FREQUENCY PIEZOELECTRIC CRYSTAL COMPOSITES, DEVICES, AND METHODS FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20130211251A1
公开(公告)日：2013-08-15
申请号：US13821400
申请日：2011-10-13
申请人： Pengdi Han , Jian Tian , Kevin Meneou , Brandon Stone
发明人： Pengdi Han , Jian Tian , Kevin Meneou , Brandon Stone
IPC分类号： H01L41/18 , A61B8/00
CPC分类号： H01L41/183 , A61B8/00 , A61B8/4483 , C01G33/006 , C01P2002/50 , C01P2004/03 , C04B35/491 , C04B35/495 , C04B35/499 , C04B2235/3206 , C04B2235/3215 , C04B2235/3224 , C04B2235/3234 , C04B2235/3236 , C04B2235/3249 , C04B2235/3255 , C04B2235/3286 , C04B2235/3296 , C04B2235/3298 , C04B2235/76 , C04B2235/768 , C04B2235/96 , C30B29/30 , C30B29/32 , G03H3/00 , H01L41/18 , H01L41/1875 , H01L41/1876 , H01L41/332 , H01L41/338 , H03H9/02015 , Y10T29/42
摘要： The present invention generally relates to high frequency piezoelectric crystal composites, devices, and method for manufacturing the same. In adaptive embodiments an improved imaging device, particularly a medical imaging device or a distance imaging device, for high frequency (>20 MHz) applications involving an imaging transducer assembly is coupled to a signal imagery processor. Additionally, the proposed invention presents a system for photolithography based micro-machined piezoelectric crystal composites and their uses resulting in improved performance parameters.

70. 发明申请

US20130207513A1 ELECTROMECHANICAL EFFECT IN METAL OXIDES 有权
标题翻译：金属氧化物的电化学效应
公开(公告)号：US20130207513A1
公开(公告)日：2013-08-15
申请号：US13877662
申请日：2011-10-05
申请人： Igor Lubomirsky , Roman Korobko , Anna Kossoy , Harry L. Tuller
发明人： Igor Lubomirsky , Roman Korobko , Anna Kossoy , Harry L. Tuller
IPC分类号： H01L41/187 , H01L41/27
CPC分类号： H01L41/27 , H01L41/094 , H01L41/18 , H01L41/187 , H01L41/314 , H01L41/316 , Y10T29/42
摘要： This invention provides an electromechanical device comprising an active material comprising a metal oxide such as Ce0.8Gd0.2O1.9 wherein the elastic modulus of metal oxide can be modulated by applying external electric field. The Ce0.8Gd0.2O1.9 layer in a substrate \ electrode \Ce0.8Gd0.2O1.9 \ electrode structure or conductive substrate \Ce0.8Gd0.2O1.9 \ electrode structure develops a stress upon applying an electric field. This invention provides methods for tailoring the elastic modulus of materials using an electric field for the generation of an electromechanical response.
摘要翻译：本发明提供了一种机电装置，其包括含有金属氧化物的活性材料，例如Ce0.8Gd0.2O.1.9，其中金属氧化物的弹性模量可以通过施加外部电场来调制。 Ce0.8Gd0.2O1.9层在衬底\电极\ Ce0.8Gd0.2O1.9 \电极结构或导电衬底\ Ce0.8Gd0.2O1.9 \电极结构中在施加电场时产生应力。本发明提供了使用用于产生机电响应的电场调整材料的弹性模量的方法。

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