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61. 发明授权

US09217206B2 Enhanced porosification 有权
标题翻译：增强孔隙度
公开(公告)号：US09217206B2
公开(公告)日：2015-12-22
申请号：US14040116
申请日：2013-09-27
申请人： Joseph Behnke , Seung Bum Rim
发明人： Joseph Behnke , Seung Bum Rim
IPC分类号： C25F3/12 , C25F3/30 , C25F7/00 , H01L31/18 , H01L21/02 , H01L31/068
CPC分类号： C25F3/30 , C25F3/12 , C25F7/00 , H01L21/0203 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： Forming a porous layer on a silicon substrate. Forming the porous layer can include placing a first silicon substrate in a solution, where a first electrode is within a threshold distance to an edge of the silicon substrate. It can further include conducting a first current through the silicon substrate, where the first electrode can be positioned relative to the edge allowing for substantially uniform porosification along the edge of the first silicon substrate.
摘要翻译：在硅衬底上形成多孔层。形成多孔层可以包括将第一硅衬底放置在溶液中，其中第一电极处于与硅衬底的边缘的阈值距离内。其还可以包括通过硅衬底进行第一电流，其中第一电极可相对于边缘定位，允许沿着第一硅衬底的边缘基本上均匀的孔隙化。

62. 发明授权

US09209320B1 Method of fabricating a single photon avalanche diode imaging sensor 有权
标题翻译：制造单光子雪崩二极管成像传感器的方法
公开(公告)号：US09209320B1
公开(公告)日：2015-12-08
申请号：US14454460
申请日：2014-08-07
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Eric A. G. Webster
IPC分类号： H01L31/02 , H01L27/146
CPC分类号： H01L31/02027 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14685 , H01L27/14687 , H01L31/107 , H01L31/1892 , Y02E10/50
摘要： A method of fabricating an avalanche photodiode pixel includes growing a second doped semiconductor layer on a first doped semiconductor layer having a first doping concentration. The second doped semiconductor layer is grown with a second doping concentration and is of an opposite majority charge carrier type as the first doped semiconductor layer. A doped contact region having a third doping concentration is formed in the second doped semiconductor layer between the doped contact region and the first doped semiconductor layer. The doped contact region is of a same majority charge carrier type as the second doped semiconductor layer. The third doping concentration is greater than the second doping concentration. A guard ring region is formed in the second doped semiconductor layer, is of an opposite majority charge carrier type as the second doped semiconductor layer, and extends through the second doped semiconductor layer surrounding the doped contact region.
摘要翻译：制造雪崩光电二极管像素的方法包括在具有第一掺杂浓度的第一掺杂半导体层上生长第二掺杂半导体层。第二掺杂半导体层以第二掺杂浓度生长，并且具有与第一掺杂半导体层相反的多数电荷载流子类型。在掺杂接触区域和第一掺杂半导体层之间的第二掺杂半导体层中形成具有第三掺杂浓度的掺杂接触区域。掺杂接触区域具有与第二掺杂半导体层相同的多数电荷载流子类型。第三掺杂浓度大于第二掺杂浓度。保护环区形成在第二掺杂半导体层中，具有与第二掺杂半导体层相反的大多数电荷载流子类型，并延伸穿过包围掺杂接触区的第二掺杂半导体层。

63. 发明申请

US20150329988A1 USE OF FREESTANDING NITRIDE VENEERS IN SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在半导体器件中使用自由氮化合物
公开(公告)号：US20150329988A1
公开(公告)日：2015-11-19
申请号：US14814440
申请日：2015-07-30
申请人： Scott M. Zimmerman , William R. Livesay , Richard L. Ross
发明人： Scott M. Zimmerman , William R. Livesay , Richard L. Ross
IPC分类号： C30B25/18 , C30B25/06 , C30B23/08 , C30B23/02 , C30B19/12 , C30B29/40 , C30B29/06 , C30B29/08 , C30B29/52 , C30B29/42 , C30B29/16 , H01L31/0304 , H01L31/028 , H01L31/0296 , H01L31/036 , H01L31/0693 , H01L31/0687 , H01L31/0735 , H01L31/074 , H01L31/0725 , H01L31/18 , H01L33/00 , C30B25/10
CPC分类号： C30B25/186 , C30B19/12 , C30B23/025 , C30B23/08 , C30B25/02 , C30B25/06 , C30B25/105 , C30B29/06 , C30B29/08 , C30B29/16 , C30B29/40 , C30B29/403 , C30B29/406 , C30B29/42 , C30B29/52 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/03044 , H01L31/036 , H01L31/0547 , H01L31/0687 , H01L31/0693 , H01L31/0725 , H01L31/0735 , H01L31/074 , H01L31/18 , H01L31/1804 , H01L31/1808 , H01L31/1812 , H01L31/184 , H01L31/1844 , H01L31/1848 , H01L31/1856 , H01L31/1892 , H01L33/0054 , H01L33/0062 , H01L33/0075 , H01L33/0083 , Y02E10/52 , Y02E10/544 , Y02E10/547 , Y02P70/521 , Y10T428/31678
摘要： Thin freestanding nitride veneers can be used for the fabrication of semiconductor devices. These veneers are typically less than 100 microns thick. The use of thin veneers also eliminates the need for subsequent wafer thinning for improved thermal performance and 3D packaging.
摘要翻译：薄的独立氮化物薄板可用于制造半导体器件。这些单板通常小于100微米厚。使用薄的单板也消除了随后的晶片变薄以改善热性能和3D封装的需要。

64. 发明授权

US09184332B2 Inverted metamorphic multi-junction (IMM) solar cell and associated fabrication method 有权
标题翻译：反相变质多结（IMM）太阳能电池及相关制造方法
公开(公告)号：US09184332B2
公开(公告)日：2015-11-10
申请号：US13176325
申请日：2011-07-05
申请人： Frank F. Ho
发明人： Frank F. Ho
IPC分类号： H01L31/04 , H01L31/0304 , H01L31/0203 , H01L31/0264 , H01L31/18 , H01L31/0687 , H01L31/043
CPC分类号： H01L31/1852 , H01L31/043 , H01L31/06875 , H01L31/1892 , Y02E10/544
摘要： An IMM solar cell and an associated method of fabricating an IMM solar cell are provided. In the context of a method, a first subcell may be formed upon a temporary substrate and a second subcell may be formed upon the first subcell. The second subcell may have a smaller band gap than the first subcell. The method may also bond the first and second subcells to a silicon subcell and then remove the temporary substrate. In the context of an IMM solar cell, the IMM solar cell includes first and second subcells with the first subcell disposed upon the second subcell and the second subcell having a smaller band gap than the first subcell. The IMM solar cell may also include a silicon subcell supporting the first and second subcells thereupon with a metal-to-metal bond between the silicon subcell and the second subcell.
摘要翻译：提供了IMM太阳能电池和制造IMM太阳能电池的相关方法。在方法的上下文中，第一子电池可以形成在临时衬底上，并且第二子电池可以形成在第一子电池上。第二子电池可以具有比第一子电池小的带隙。该方法还可以将第一和第二子电池结合到硅子电池，然后移除临时衬底。在IMM太阳能电池的上下文中，IMM太阳能电池包括第一和第二子电池，其中第一子电池设置在第二子电池上，而第二子电池具有比第一子电池小的带隙。 IMM太阳能电池还可以包括支撑第一和第二子电池的硅子电池，随后在硅子电池和第二子电池之间具有金属 - 金属键合。

65. 发明授权

US09136404B2 Solar cell capable of recycling a substrate and method for manufacturing the same 有权
标题翻译：能够回收基板的太阳能电池及其制造方法
公开(公告)号：US09136404B2
公开(公告)日：2015-09-15
申请号：US13139019
申请日：2009-10-27
申请人： Jung-Ho Lee , Han-Don Um , Sang-Won Jee , Kwang-Tae Park , Hong-Seok Seo , Jin-Young Jung
发明人： Jung-Ho Lee , Han-Don Um , Sang-Won Jee , Kwang-Tae Park , Hong-Seok Seo , Jin-Young Jung
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/0352 , H01L31/0384 , H01L31/065 , H01L31/068 , H01L31/075 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/022466 , H01L31/035227 , H01L31/035281 , H01L31/0384 , H01L31/065 , H01L31/068 , H01L31/075 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The present invention relates to a solar cell that can recycle a substrate, and a manufacturing method thereof. The solar cell includes: i) a plurality of nano-structures distanced from each other and extended in one direction; ii) a first conductive layer covering a first end of at least one of the plurality of nano-structures; iii) a second conductive layer distanced from the first conductive layer and covering a second end of the nano-structure; and iv) a dielectric layer disposed between the first conductive layer and the second conductive layer.
摘要翻译：本发明涉及能够回收基板的太阳能电池及其制造方法。太阳能电池包括：i）彼此间隔开并沿一个方向延伸的多个纳米结构; ii）覆盖所述多个纳米结构中的至少一个的第一端的第一导电层; iii）与所述第一导电层隔开并覆盖所述纳米结构的第二端的第二导电层; 以及iv）设置在所述第一导电层和所述第二导电层之间的电介质层。

66. 发明授权

US09117948B1 Selenium interlayer for high-efficiency multijunction solar cell 有权
标题翻译：用于高效多结太阳能电池的硒中间层
公开(公告)号：US09117948B1
公开(公告)日：2015-08-25
申请号：US13364691
申请日：2012-02-02
申请人： Geoffrey A Landis
发明人： Geoffrey A Landis
IPC分类号： H01L31/0304
CPC分类号： H01L21/02568 , H01L27/142 , H01L31/0304 , H01L31/043 , H01L31/0687 , H01L31/0725 , H01L31/076 , H01L31/078 , H01L31/184 , H01L31/1864 , H01L31/1892 , Y02E10/50
摘要： A multi junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.
摘要翻译：提供多结太阳能电池并且包括多个半导体层和设置在多个半导体层之间的界面层。界面层由界面接合材料制成，该界面结合材料具有折射率使得多个半导体层中的每一个的折射率与界面粘合材料的折射率之比小于或等于1.5。

67. 发明申请

US20150221819A1 LIFT-OFF METHOD 有权
标题翻译：提升方法
公开(公告)号：US20150221819A1
公开(公告)日：2015-08-06
申请号：US14612732
申请日：2015-02-03
申请人： DISCO CORPORATION
发明人： Hiroshi Morikazu
IPC分类号： H01L33/00 , B32B37/00 , B32B38/00 , B32B38/10 , H01L31/18 , B32B37/18
CPC分类号： H01L33/0095 , B32B37/00 , B32B38/10 , B32B43/006 , B32B2038/0044 , B32B2305/00 , B32B2323/00 , B32B2457/14 , H01L21/7806 , H01L31/186 , H01L31/1892 , Y02E10/50
摘要： A lift-off method transfers an optical device layer of an optical device wafer onto a transfer substrate. The optical device layer is stacked on a front face of an epitaxy substrate with a buffer layer provided therebetween. A complex substrate formation step forms a complex substrate by joining the transfer substrate to a front face of the optical device layer of the optical device wafer with an adhesive. A buffer layer destruction step irradiates a laser beam at a wavelength that penetrates the epitaxy substrate and is absorbed by the buffer layer from a rear side of the epitaxy substrate of the complex substrate so as to destroy the buffer layer. An optical device layer transfer step peels off the epitaxy substrate and transfers the optical device layer onto the transfer substrate.
摘要翻译：剥离方法将光学器件晶片的光学器件层转移到转印衬底上。光学器件层层叠在外延衬底的前表面上，其间设置有缓冲层。复合衬底形成步骤通过使用粘合剂将转移衬底接合到光学器件晶片的光学器件层的前表面而形成复合衬底。缓冲层破坏步骤以穿透外延基板的波长照射激光束，并从复合基板的外延基板的后侧被缓冲层吸收，从而破坏缓冲层。光学器件层转移步骤剥离外延衬底并将光学器件层转移到转移衬底上。

68. 发明授权

US09076897B2 Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device 有权
标题翻译：光电子半导体器件及其制造方法
公开(公告)号：US09076897B2
公开(公告)日：2015-07-07
申请号：US14001310
申请日：2012-02-24
申请人： Helmut Fischer , Andreas Plössl
发明人： Helmut Fischer , Andreas Plössl
IPC分类号： H01L33/02 , H01L31/18 , H01L33/00 , H01L31/0687 , H01L31/02 , H01L33/64 , H01S5/02 , H01S5/024 , H01S5/022
CPC分类号： H01L33/02 , H01L31/02 , H01L31/06875 , H01L31/18 , H01L31/1892 , H01L31/1896 , H01L33/0079 , H01L33/641 , H01L2924/0002 , H01S5/0217 , H01S5/02272 , H01S5/02476 , Y02E10/544 , Y02P70/521 , H01L2924/00
摘要： An optoelectronic semiconductor device includes an optoelectronic semiconductor layer sequence on a metal carrier element, which includes as a first component silver and as a second component a material having a lower coefficient of thermal expansion than silver, wherein the first and second components are intermixed in the metal carrier element.
摘要翻译：光电半导体器件包括在金属载体元件上的光电子半导体层序列，其包括作为第一组分银和作为第二组分的具有比银更低的热膨胀系数的材料，其中第一和第二组分混合在金属载体元件。

69. 发明授权

US09070818B2 Methods and structures for bonding elements 有权
标题翻译：接合元件的方法和结构
公开(公告)号：US09070818B2
公开(公告)日：2015-06-30
申请号：US12820326
申请日：2010-06-22
申请人： Chantal Arena
发明人： Chantal Arena
IPC分类号： H01L31/18 , C23C14/08 , H01L33/00
CPC分类号： H01L31/18 , C23C14/086 , H01L31/1884 , H01L31/1892 , H01L33/0079 , Y02E10/50
摘要： Embodiments of the invention relate to methods and structures for fabricating semiconductor structures that include at least one bonding layer for attaching two or more elements to one another. The at least one bonding layer may be at least substantially comprised of zinc, silicon and oxygen.
摘要翻译：本发明的实施例涉及用于制造半导体结构的方法和结构，其包括用于将两个或更多个元件彼此附接的至少一个结合层。至少一个粘结层可以至少基本上由锌，硅和氧组成。

70. 发明申请

US20150171253A1 SOLAR CELL STRUCTURE AND COMPOSITION AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：太阳能电池结构及其组合物及其形成方法
公开(公告)号：US20150171253A1
公开(公告)日：2015-06-18
申请号：US14628923
申请日：2015-02-23
申请人： The Boeing Company
发明人： Andreea Boca , Daniel C. Law , Joseph Charles Boisvert , Nasser H. Karam
IPC分类号： H01L31/0687
CPC分类号： H01L31/0687 , H01L21/2007 , H01L31/043 , H01L31/06875 , H01L31/0693 , H01L31/0725 , H01L31/18 , H01L31/1844 , H01L31/1892 , H01L31/1896 , Y02E10/544
摘要： A semiconductor structure including a bonding layer connecting a first semiconductor wafer layer to a second semiconductor wafer layer, the bonding layer including an electrically conductive carbonaceous component and a binder component.
摘要翻译：一种半导体结构，包括将第一半导体晶片层连接到第二半导体晶片层的接合层，所述接合层包括导电性碳质成分和粘合剂成分。

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