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61. 发明申请

US20160315210A1 SOLAR CELL AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20160315210A1
公开(公告)日：2016-10-27
申请号：US15107887
申请日：2014-11-27
申请人： Masaharu KUBO
发明人： Masaharu KUBO , Tadashi SAITO
IPC分类号： H01L31/068 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/0684 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The problem to be solved by the present invention is to provide a solar battery which reduces obstructing circumstances in improvement of photoelectric conversion efficiency. The solar battery of the present invention comprises a semiconductor substrate of a first conductivity type, a first semiconductor layer of a second conductivity type formed along at a light transmitting surface of the semiconductor substrate and collecting photo-generated carriers based on solar beam of middle and long wavelength, and a second semiconductor layer of a second conductivity type formed at a light incident surface of the semiconductor substrate and collecting photo-generated carriers which cannot reach a first semiconductor layer among photo-generated carriers based on the solar beam of middle and long wavelength as well as collecting photo-generated carriers based on solar beam of short wavelength.
摘要翻译：本发明要解决的问题在于提供一种减少光电转换效率提高的障碍的太阳能电池。本发明的太阳能电池包括第一导电类型的半导体衬底，沿着半导体衬底的透光表面形成的第二导电类型的第一半导体层，并且基于中间的太阳光束收集光生载流子，以及形成在半导体基板的光入射面的第二导电类型的第二半导体层，并收集基于中长期太阳光束的光生载体中不能到达第一半导体层的光生载流子波长以及基于短波长的太阳光束收集光生载流子。

62. 发明申请

US20160284922A1 BLISTER-FREE POLYCRYSTALLINE SILICON FOR SOLAR CELLS 有权
标题翻译：无溶剂多晶硅太阳能电池
公开(公告)号：US20160284922A1
公开(公告)日：2016-09-29
申请号：US14747874
申请日：2015-06-23
申请人： Taiqing Qiu , Gilles Olav Tanguy Sylvain Poulain , Périne Jaffrennou , Nada Habka , Sergej Filonovich
发明人： Taiqing Qiu , Gilles Olav Tanguy Sylvain Poulain , Périne Jaffrennou , Nada Habka , Sergej Filonovich
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02008 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/03682 , H01L31/1804 , H01L31/182 , H01L31/1824 , H01L31/1864 , H01L31/1872 , Y02E10/545 , Y02E10/547 , Y02P70/521
摘要： Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.
摘要翻译：这里描述的是制造太阳能电池的方法。在一个示例中，制造太阳能电池的方法包括在与基板的光接收表面相对的基板的背面上形成非晶介质层。该方法还包括通过等离子体增强化学气相沉积（PECVD）在非晶介质层上形成微晶硅层。该方法还包括通过PECVD在微晶硅层上形成非晶硅层。该方法还包括退火微晶硅层和非晶硅层，以从微晶硅层和非晶硅层形成均匀的多晶硅层。该方法还包括从均质多晶硅层形成发射极区域。

63. 发明授权

US09455368B2 Method of forming an interdigitated back contact solar cell 有权
标题翻译：形成交错背接触太阳能电池的方法
公开(公告)号：US09455368B2
公开(公告)日：2016-09-27
申请号：US14323035
申请日：2014-07-03
申请人： Varian Semiconductor Equipment Associates, Inc.
发明人： Nicholas P T Bateman
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/0682 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要： A method of forming an interdigitated back contact solar cell is described. The method uses a deposition process to create a doped glass layer on the substrate, which, when diffused, created either the emitter or back surface fields. The deposition process may also create an oxide layer on top of the doped glass layer. This oxide layer serves as a mask for a subsequent ion implant. This ion implant directs ions having the opposite conductivity of the doped glass layer into exposed regions of the substrate. A thermal process is used to diffuse the dopant from the doped glass layer into the substrate and repair any damage caused by the ion implant.
摘要翻译：描述了形成叉指式背接触太阳能电池的方法。该方法使用沉积工艺在衬底上产生掺杂的玻璃层，当掺杂的玻璃层在扩散时产生发射极或背表面场。沉积工艺还可以在掺杂的玻璃层的顶部上形成氧化物层。该氧化物层用作后续离子注入的掩模。该离子注入将具有相反电导率的掺杂玻璃层的离子引导到衬底的暴露区域中。使用热处理将掺杂剂从掺杂的玻璃层扩散到衬底中并修复由离子注入引起的任何损伤。

64. 发明授权

US09455363B2 PN structure formed by improved doping methods to simplify manufacturing process of diodes for solar cells 有权
标题翻译： PN结构通过改进的掺杂方法形成，以简化太阳能电池二极管的制造工艺
公开(公告)号：US09455363B2
公开(公告)日：2016-09-27
申请号：US13920077
申请日：2013-06-17
申请人： Jiong Chen , Junhua Hong
发明人： Jiong Chen , Junhua Hong
IPC分类号： H01L31/068 , H01L31/18 , H01L21/265 , H01L21/266
CPC分类号： H01L31/0682 , H01L21/26586 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.
摘要翻译：公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，然后形成具有开放区域的阻挡层。通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。

65. 发明授权

US09412895B2 Method of manufacturing photoelectric device 有权
标题翻译：制造光电器件的方法
公开(公告)号：US09412895B2
公开(公告)日：2016-08-09
申请号：US13612687
申请日：2012-09-12
申请人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
发明人： Young-Jin Kim , Doo-Youl Lee , Young-Su Kim , Chan-Bin Mo , Young-Sang Park , Jae-Ho Shin , Sang-Jin Park , Sang-Won Seo , Min-Chul Song , Dong-Seop Kim
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted.According to one or more embodiments of the present invention, a photoelectric device having a reduction in the number of processes for manufacturing the photoelectric device and improved output characteristics is provided.
摘要翻译：一种制造光电器件的方法，所述方法包括：通过第一离子注入在半导体衬底上形成第一半导体层; 通过第二离子注入在所述第一半导体层的一部分上形成具有反向导电类型的第二半导体层; 并进行热处理以恢复半导体衬底的晶格损伤并激活其中注入离子的掺杂剂。根据本发明的一个或多个实施例，提供了一种光电装置的制造数量减少的光电装置和输出特性的改善。

66. 发明申请

US20160204288A1 HYBRID EMITTER ALL BACK CONTACT SOLAR CELL 审中-公开
标题翻译：混合发射器全部返回联系太阳能电池
公开(公告)号：US20160204288A1
公开(公告)日：2016-07-14
申请号：US15067960
申请日：2016-03-11
申请人： SunPower Corporation
发明人： Paul LOSCUTOFF , Seung RIM
IPC分类号： H01L31/0224 , H01L31/0368 , H01L31/18
CPC分类号： H01L31/182 , H01L31/022441 , H01L31/022458 , H01L31/028 , H01L31/03682 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , Y02E10/50 , Y02E10/546 , Y02E10/547
摘要： An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.
摘要翻译：全背接触太阳能电池具有混合发射极设计。太阳能电池具有形成在单晶硅衬底的背面上的薄介电层。太阳能电池的一个发射极由形成在薄介电层上的掺杂多晶硅制成。太阳能电池的另一个发射极形成在单晶硅衬底中，并由掺杂的单晶硅制成。太阳能电池包括允许金属触点连接到相应的发射器的接触孔。

67. 发明申请

US20160190365A1 PHOTOVOLTAIC SOLAR MODULE METALLIZATION AND SHADE MANAGEMENT CONNECTION AND FABRICATION METHODS 审中-公开
标题翻译：光伏太阳能模块金属化和阴影管理连接和制造方法
公开(公告)号：US20160190365A1
公开(公告)日：2016-06-30
申请号：US14829635
申请日：2015-08-18
申请人： Solexel, Inc.
发明人： Mehrdad M. Moslehi
IPC分类号： H01L31/0224 , H01L31/0443
CPC分类号： H01L31/022458 , H01L31/022441 , H01L31/042 , H01L31/044 , H01L31/0443 , H01L31/0516 , H01L31/0682 , Y02E10/547
摘要： Solar cell structures having improved efficiency, distributed shade management, and reduced fabrication complexity.
摘要翻译：太阳能电池结构具有改进的效率，分布式阴影管理和降低的制造复杂性。

68. 发明申请

US20160190354A1 BARRIER-LESS METAL SEED STACK AND CONTACT 审中-公开
公开(公告)号：US20160190354A1
公开(公告)日：2016-06-30
申请号：US15064488
申请日：2016-03-08
申请人： Mukul Agrawal , Seung Bum Rim , Michael Cudzinovic
发明人： Mukul Agrawal , Seung Bum Rim , Michael Cudzinovic
IPC分类号： H01L31/02 , H01L31/0368
CPC分类号： H01L31/02008 , H01L31/022441 , H01L31/03682 , H01L31/0682 , H01L31/0745 , H01L31/0747 , Y02E10/547
摘要： Approaches for forming barrier-less seed stacks and contacts are described. In an example, a solar cell includes a substrate and a conductive contact disposed on the substrate. The conductive contact includes a copper layer directly contacting the substrate. In another example, a solar cell includes a substrate and a seed layer disposed directly on the substrate. The seed layer consists essentially of one or more non-diffusion-barrier metal layers. A conductive contact includes a copper layer disposed directly on the seed layer. An exemplary method of fabricating a solar cell involves providing a substrate, and forming a seed layer over the substrate. The seed layer includes one or more non-diffusion-barrier metal layers. The method further involves forming a conductive contact for the solar cell from the seed layer.

69. 发明授权

US09362427B2 Metallization of solar cells 有权
标题翻译：太阳能电池的金属化
公开(公告)号：US09362427B2
公开(公告)日：2016-06-07
申请号：US14137782
申请日：2013-12-20
申请人： Richard Hamilton Sewell , David Aaron Randolph Barkhouse , Junbo Wu , Michael Cudzinovic , Paul Loscutoff , Joseph Behnke , Michel Arsène Olivier Ngamo Toko
发明人： Richard Hamilton Sewell , David Aaron Randolph Barkhouse , Junbo Wu , Michael Cudzinovic , Paul Loscutoff , Joseph Behnke , Michel Arsène Olivier Ngamo Toko
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/068 , H01L31/0745
CPC分类号： H01L31/022441 , H01L31/02008 , H01L31/0682 , H01L31/0745 , Y02E10/547 , Y02P70/521
摘要： Approaches for the metallization of solar cells and the resulting solar cells are described. In an example, a method of fabricating a solar cell involves forming a barrier layer on a semiconductor region disposed in or above a substrate. The semiconductor region includes monocrystalline or polycrystalline silicon. The method also involves forming a conductive paste layer on the barrier layer. The method also involves forming a conductive layer from the conductive paste layer. The method also involves forming a contact structure for the semiconductor region of the solar cell, the contact structure including at least the conductive layer.
摘要翻译：描述了用于太阳能电池的金属化和所得到的太阳能电池的方法。在一个实例中，制造太阳能电池的方法涉及在设置在基板中或上方的半导体区域上形成阻挡层。半导体区域包括单晶硅或多晶硅。该方法还涉及在阻挡层上形成导电糊层。该方法还涉及从导电浆料层形成导电层。该方法还包括形成用于太阳能电池的半导体区域的接触结构，该接触结构至少包括导电层。

70. 发明授权

US09331225B2 Solar cell module 有权
标题翻译：太阳能电池组件
公开(公告)号：US09331225B2
公开(公告)日：2016-05-03
申请号：US13972328
申请日：2013-08-21
申请人： Sanyo Electric Co., Ltd.
发明人： Yosuke Ishii , Daisuke Ide , Youhei Murakami
IPC分类号： H01L31/0224 , H01L31/05 , H01L31/068
CPC分类号： H01L31/0516 , H01L31/022441 , H01L31/0682 , Y02E10/547
摘要： The present invention improves the reliability of back contact solar cell modules that are electrically connected by means of wiring material. A solar cell module (1) is provided with a plurality of solar cells (10), and wiring material (11). Each solar cell (10) has a p-side electrode (15) and an n-side electrode (14) arranged on a single main surface (20a). Among adjacent solar cells (10), the wiring material (11) electrically connects the p-side electrode (15) of one solar cell (10) to the n-side electrode (14) of another solar cell (10). The surface layers of the p-side electrode (15) and the n-side electrode (14) include plating layers (16c, 17c) which have at least one power supply point (18, 19). The wiring material (11) is bonded to the plating layers such that the wiring material overlaps a portion of the power supply points (18, 19) of each solar cell (10), and does not overlap another portion of the power supply points (18, 19).
摘要翻译：本发明提高了通过布线材料电连接的背接触太阳能电池模块的可靠性。太阳能电池模块（1）具有多个太阳能电池（10）和配线材料（11）。每个太阳能电池（10）具有布置在单个主表面（20a）上的p侧电极（15）和n侧电极（14）。在相邻的太阳能电池（10）中，布线材料（11）将一个太阳能电池（10）的p侧电极（15）与另一太阳能电池（10）的n侧电极（14）电连接。 p侧电极（15）和n侧电极（14）的表层包括具有至少一个电源点（18,19）的电镀层（16c，17c）。布线材料（11）被接合到镀层，使得布线材料与每个太阳能电池（10）的电源点（18,19）的一部分重叠，并且不与电源点的另一部分 18，19）。

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