专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US08729739B2 Bi-directional circuit breaker 有权
标题翻译：双向断路器
公开(公告)号：US08729739B2
公开(公告)日：2014-05-20
申请号：US13017227
申请日：2011-01-31
申请人： Vadim Lubomirsky , Damian Urciuoli
发明人： Vadim Lubomirsky , Damian Urciuoli
IPC分类号： H02B1/24
CPC分类号： H01L29/8083 , H01L29/0843 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/42316 , H02M1/32 , H03K17/08142 , H03K17/6874 , H03K17/785 , Y10T307/414 , Y10T307/565 , Y10T307/685 , Y10T307/74
摘要： A circuit breaker comprising first and second JFETs, each comprising a gate, drain and source connection, the JFETs sources being operatively connected to each other to form a common-source connection and adapted to be connected to and operating to open an external circuit when the current flowing through the JFETs exceeds a predetermined threshold, the JFETs' gates, and common-source connection being operatively connected to a gate driver circuit which causes the JFETs to turn off when the predetermined threshold is exceeded; whereupon the current flows through the common-source connection into the second gate and into the gate driver circuit which causes the gate driver circuit to turn off the first and second JFETs and open the circuit breaker. Also claimed is a method of sensing an overloaded circuit comprising leading and trailing JFETs in a circuit that open the circuit and prevent current flow when a predetermined threshold is exceeded.
摘要翻译：一种断路器，包括第一和第二JFET，每个包括栅极，漏极和源极连接，所述JFET源彼此可操作地连接以形成公共源连接，并且适于连接到和操作以打开外部电路流过JFET的电流超过预定阈值，JFET栅极和公共源极连接可操作地连接到栅极驱动电路，当栅极驱动电路超过预定阈值时，栅极驱动电路导致JFET截止; 于是电流流过共源电源连接进入第二栅极并进入栅极驱动电路，使栅极驱动电路关闭第一和第二JFET并断开断路器。还要求保护的是一种感测过载电路的方法，该过载电路包括在超过预定阈值时打开电路并防止电流流动的电路中的前导和后沿JFET。

62. 发明申请

US20140131738A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140131738A1
公开(公告)日：2014-05-15
申请号：US14158381
申请日：2014-01-17
申请人： ROHM CO., LTD.
发明人： Masatoshi AKETA
IPC分类号： H01L29/06 , H01L29/872 , H01L29/16
CPC分类号： H01L29/0619 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/6606 , H01L29/872 , Y02B10/30
摘要： A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.01 L
摘要翻译：提供能够减小反向泄漏电流和正向电压的半导体器件。在半导体器件中，阳极通过与表面形成的SiC外延层的表面连接，形成在具有侧壁和底壁的表面侧的梯形沟槽的表面上进行肖特基结。此外，每个梯形沟槽的底壁的边缘部分形成为以曲率半径R满足0.01L

63. 发明申请

US20140077231A1 DIAMOND SENSORS, DETECTORS, AND QUANTUM DEVICES 有权
标题翻译：钻石传感器，探测器和量子设备
公开(公告)号：US20140077231A1
公开(公告)日：2014-03-20
申请号：US14115815
申请日：2012-05-10
申请人： Element Six Limited
发明人： Daniel James Twitchen , Matthew Lee Markham
IPC分类号： H01L29/16 , H01L29/15 , H01L29/167 , C30B29/04 , C30B29/64
CPC分类号： H01L29/1602 , B82Y10/00 , C30B29/04 , C30B29/64 , C30B31/22 , C30B33/08 , G01N24/10 , G01R33/24 , G01R33/302 , G01R33/60 , G06N99/002 , H01L21/0405 , H01L29/157 , H01L29/167
摘要： A thin plate of synthetic single crystal diamond material, the thin plate of synthetic single crystal diamond material having: a thickness in a range 100 nm to 50 μιη; a concentration of quantum spin defects greater than 0.1 ppb (parts-per-billion); a concentration of point defects other than the quantum spin defects of below 200 ppm (parts-per-million); and wherein at least one major face of the thin plate of synthetic single crystal diamond material comprises surface termination species which have zero nuclear spin and/or zero electron spin.
摘要翻译：合成单晶金刚石材料的薄板，合成单晶金刚石材料薄板具有：厚度在100nm至50μm的范围内; 量子自旋缺陷的浓度大于0.1ppb（十亿分之一）; 量子自旋缺陷以外的点缺陷浓度低于200ppm（百万分之一）; 并且其中所述合成单晶金刚石材料薄板的至少一个主面包括具有零核自旋和/或零电子自旋的表面终止物质。

64. 发明授权

US08648354B2 Electronic field effect devices and methods for their manufacture 失效
标题翻译：电子场效应装置及其制造方法
公开(公告)号：US08648354B2
公开(公告)日：2014-02-11
申请号：US13722857
申请日：2012-12-20
申请人： Diamond Microwave Devices Limited
发明人： Christopher John Howard Wort , Geoffrey Alan Scarsbrook , Ian Friel , Richard Stuart Balmer
IPC分类号： H01L29/15
CPC分类号： C01B32/28 , C23C16/27 , C23C16/274 , C23C16/278 , C30B25/105 , C30B25/20 , C30B29/04 , G01N21/87 , G01N21/95 , G01N27/308 , G01N2201/0636 , H01J37/321 , H01J2237/08 , H01J2237/3341 , H01L21/02104 , H01L21/02376 , H01L21/02527 , H01L21/02579 , H01L21/0262 , H01L21/02634 , H01L21/041 , H01L29/045 , H01L29/1602 , H01L29/167 , H01L29/36 , Y10T428/24355
摘要： Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.
摘要翻译：公开了电子场效应装置及这些电子场效应装置的制造方法。特别地，公开了一种电子场效应器件，其由于由金刚石与极性材料组合形成的简单结构中形成高度移动的二维电荷载体气体而具有改善的电性能。

65. 发明授权

US08633560B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08633560B2
公开(公告)日：2014-01-21
申请号：US13441202
申请日：2012-04-06
申请人： Masatoshi Aketa
发明人： Masatoshi Aketa
IPC分类号： H01L29/47
CPC分类号： H01L29/0619 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/6606 , H01L29/872 , Y02B10/30
摘要： A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being connected to a surface of an SiC epitaxial layer that has the surface, a back surface, and trapezoidal trenches formed on the side of the surface each having side walls and a bottom wall. Furthermore, an edge portion of the bottom wall of each of the trapezoidal trenches is formed to be in the shape bent towards the outside of the trapezoidal trench in the manner that a radius of curvature R satisfies 0.01
摘要翻译：提供能够减小反向泄漏电流和正向电压的半导体器件。在半导体器件中，阳极通过与表面形成的SiC外延层的表面连接，形成在具有侧壁和底壁的表面侧的梯形沟槽的表面上进行肖特基结。此外，每个梯形沟槽的底壁的边缘部分形成为以梯形曲率半径R满足0.01

66. 发明申请

US20130313635A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130313635A1
公开(公告)日：2013-11-28
申请号：US13983157
申请日：2012-02-01
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/8213 , H01L27/088 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/086 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/45 , H01L29/47 , H01L29/66045 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7827 , H01L2224/0603
摘要： A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region.
摘要翻译：本发明的半导体器件是具有包括宽带隙半导体的半导体层的半导体器件，其中半导体层包括：第一导电型源极区，第二导电型沟道区和第一导电类型漏极区域，其从半导体层的表面侧依次形成; 源极沟槽，其从半导体层的表面通过源极区域和沟道区域到达漏极区域; 形成为与沟道区域接触的栅极绝缘膜; 面对沟道区域的栅电极，其间插入有栅极绝缘膜; 以及选择性地形成在源沟槽的侧面或底面上的第二导电类型的第一击穿电压保持区域，并且所述半导体器件包括与源极沟槽中的漏极区域接合的势垒形成层，用于通过与漏极区域的连接形成低于由沟道区域和漏极区域之间的pn结形成的体二极管的扩散电位的结屏障。

67. 发明申请

US20130306989A1 DIAMOND AND DIAMOND COMPOSITE MATERIAL 有权
公开(公告)号：US20130306989A1
公开(公告)日：2013-11-21
申请号：US13899444
申请日：2013-05-21
申请人： Francis J. Kub , Charles R. Eddy, JR. , Boris N. Feygelson , Scooter Johnson
发明人： Francis J. Kub , Charles R. Eddy, JR. , Boris N. Feygelson , Scooter Johnson
IPC分类号： H01L29/16 , H01L21/04
CPC分类号： H01L29/1602 , C23C14/0641 , C23C16/27 , C23C16/34 , C23C24/04 , C23C28/046 , H01L21/0242 , H01L21/02439 , H01L21/02444 , H01L21/02474 , H01L21/02507 , H01L21/02521 , H01L21/02527 , H01L21/02601 , H01L21/02628 , H01L21/0405
摘要： A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.

68. 发明申请

US20130306988A1 DIAMOND AND DIAMOND COMPOSITE MATERIAL 有权
标题翻译：金刚石和金刚石复合材料
公开(公告)号：US20130306988A1
公开(公告)日：2013-11-21
申请号：US13899433
申请日：2013-05-21
申请人： Francis J. Kub , Charles R. Eddy, Jr. , Boris N. Feygelson , Scooter Johnson
发明人： Francis J. Kub , Charles R. Eddy, Jr. , Boris N. Feygelson , Scooter Johnson
IPC分类号： H01L29/16 , H01L21/04
CPC分类号： H01L29/1602 , C23C24/082 , H01L21/02444 , H01L21/0245 , H01L21/02507 , H01L21/02513 , H01L21/02527 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/0405
摘要： A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.
摘要翻译：一种结构，其具有：具有金刚石纳米颗粒的基底和金刚石层。金刚石纳米颗粒是通过将金刚石颗粒与基底相撞形成的。一种方法：将亚微米金刚石颗粒的气溶胶引向衬底，并在衬底上形成由金刚石颗粒与衬底碰撞形成的金刚石纳米颗粒的金刚石层。

69. 发明申请

US20130248225A1 Laser Ablation Technique for Electrical Contact to Buried Electrically Conducting Layers in Diamond 有权
标题翻译：激光烧蚀技术在金刚石埋地导电层电接触
公开(公告)号：US20130248225A1
公开(公告)日：2013-09-26
申请号：US13801495
申请日：2013-03-13
申请人： Bradford B. Pate , Matthew P. Ray , Jeffrey W. Baldwin
发明人： Bradford B. Pate , Matthew P. Ray , Jeffrey W. Baldwin
IPC分类号： H05K3/46
CPC分类号： H05K1/09 , B23K26/06 , B23K26/0622 , B23K26/361 , B23K26/362 , B23K26/40 , B23K26/402 , B23K26/53 , B23K2101/38 , B23K2101/40 , B23K2103/50 , C30B29/04 , C30B33/02 , H01L23/3732 , H01L29/1602 , H01L29/1608 , H01L2924/00 , H01L2924/0002 , H05K3/0029 , H05K3/4602 , H05K2201/0323 , Y10S438/931 , Y10T428/265 , Y10T428/30
摘要： A method of laser ablation for electrical contact to a buried electrically conducting layer in diamond comprising polishing a single crystal diamond substrate having a first carbon surface, implanting the diamond with a beam of 180 KeV followed by 150 KeV C+ ions at fluencies of 4×1015 ions/cm2 and 5×1015 ions/cm2 respectively, forming an electrically conducting carbon layer beneath the first carbon surface, and ablating the single crystal diamond which lies between the electrically conducting layer and the first carbon surface.
摘要翻译：一种用于与金刚石中的掩埋导电层进行电接触的激光烧蚀的方法，包括抛光具有第一碳表面的单晶金刚石衬底，用180KeV的光束注入金刚石，然后以4×1015的流通度注入150KeV C +离子离子/ cm 2和5×10 15离子/ cm 2，在第一碳表面下形成导电碳层，并且消除位于导电层和第一碳表面之间的单晶金刚石。

70. 发明申请

US20130228547A1 METHOD FOR MANUFACTURING A FLEXIBLE INTRAOCULAR RETINAL IMPLANT HAVING DOPED DIAMOND ELECTRODES 有权
标题翻译：用于制造具有钻孔金刚石电极的柔性肠内植入物的方法
公开(公告)号：US20130228547A1
公开(公告)日：2013-09-05
申请号：US13703062
申请日：2011-06-08
申请人： Emmanuel Scorsone , Philippe Bergonzo , Mathias Bonnauron
发明人： Emmanuel Scorsone , Philippe Bergonzo , Mathias Bonnauron
IPC分类号： H01L21/64
CPC分类号： H01L21/64 , A61N1/0543 , A61N1/36046 , H01L21/02444 , H01L21/02527 , H01L21/02579 , H01L21/02601 , H01L21/0262 , H01L21/02628 , H01L21/02639 , H01L29/1602 , H01L29/45
摘要： A method for manufacturing an intraocular retinal implant including: providing a mold capable of supporting growth of a layer of doped diamond, the mold including, on one face, elements all depressed or all projecting with respect to the surface of the face, and constituting a pattern cavity for the electrodes of the implant which it is desired to obtain; producing the doped diamond electrodes by growing a layer of doped diamond in all or part of a space occupied by the pattern cavity elements; forming a first insulating layer on the face of the mold including the pattern cavity; producing interconnection lines by depositing an electrically conductive material at least in spaces not covered by the first insulating layer; forming a second insulating layer on the mold face including the pattern cavity, the second layer covering the interconnection lines, the first and second insulating layers forming a flexible plate of the implant; removing the mold.
摘要翻译：一种用于制造眼内视网膜植入物的方法，包括：提供能够支撑掺杂金刚石层生长的模具，所述模具在一个面上包括相对于所述面的表面全部凹陷或全部突出的元件，并且构成想要获得的植入物的电极的图案腔; 通过在由图案腔元件占据的空间的全部或部分中生长掺杂金刚石来生产掺杂的金刚石电极; 在包括图案腔的模具的表面上形成第一绝缘层; 通过至少在未被所述第一绝缘层覆盖的空间中沉积导电材料来产生互连线; 在包括所述图案腔的所述模具表面上形成第二绝缘层，所述第二层覆盖所述互连线，所述第一和第二绝缘层形成所述植入物的柔性板; 取出模具。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式