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    • 65. 发明授权
    • Defected ground plane inductor
    • 未接地平面电感
    • US08710622B2
    • 2014-04-29
    • US13298359
    • 2011-11-17
    • David M. Smith
    • David M. Smith
    • H01L27/08
    • H01L28/10H01F17/0006H01F2017/0073H01L23/481H01L23/5227H01L2924/0002H01L2924/10253H01L2924/10329H01L2924/14H01L2924/1421H01L2924/19042H01L2924/19104H01L2924/00
    • An spiral inductor (300) formed on a semiconductor substrate (102). One or more insulating layers (104, 303) is disposed on a first surface of the semiconductor substrate. A spiral structure (106) is formed of a first conductive material layer disposed on the insulating layer. The spiral structure has a terminal end (105) at a location enclosed by one or more coils of the spiral. A ground plane (302) is formed of a second conductive material and disposed on a second surface located on a side of the substrate opposed from the first surface. The ground plane is defected so as to define a signal trace (308) formed from a portion of the ground plane. A conductive via (304) extends through the one or more insulating layers, and through the semiconductor substrate, to form an electrical connection between the ground plane and the terminal end.
    • 形成在半导体衬底(102)上的螺旋电感器(300)。 一个或多个绝缘层(104,303)设置在半导体衬底的第一表面上。 螺旋结构(106)由设置在绝缘层上的第一导电材料层形成。 螺旋结构在由螺旋的一个或多个线圈封闭的位置处具有终端(105)。 接地平面(302)由第二导电材料形成,并且设置在位于与第一表面相对的基板一侧的第二表面上。 接地平面缺陷以便限定由接地平面的一部分形成的信号迹线(308)。 导电通孔(304)延伸通过一个或多个绝缘层,并穿过半导体衬底,以在接地平面和终端之间形成电连接。
    • 70. 发明授权
    • Micromagnetic device and method of forming the same
    • 微磁装置及其形成方法
    • US08618900B2
    • 2013-12-31
    • US13722797
    • 2012-12-20
    • Enpirion, Inc.
    • Ashraf W. LotfiTrifon M. LiakopoulosRobert W. FilasAmrit Panda
    • H01F5/00
    • H01F27/2804H01F5/00H01F17/0006H01F27/24H01F27/245H01F27/29H01F41/046H01F2017/0066H01F2027/2809Y10T428/24331
    • A micromagnetic device includes a first insulating layer formed above a substrate, a first seed layer formed above the first insulating layer, a first conductive winding layer selectively formed above the first seed layer, and a second insulating layer formed above the first conductive winding layer. The micromagnetic device also includes a first magnetic core layer formed above the second insulating layer, a third insulating layer formed above the first magnetic core layer, and a second magnetic core layer formed above the third insulating layer. The micromagnetic device still further includes a fourth insulating layer formed above the second magnetic core layer, a second seed layer formed above the fourth insulating layer, and a second conductive winding layer formed above the second seed layer and in vias to the first conductive winding layer. The first and second conductive winding layers form a winding for the micromagnetic device.
    • 微电磁器件包括形成在衬底上的第一绝缘层,形成在第一绝缘层之上的第一晶种层,选择性地形成在第一晶种层上方的第一导电绕组层以及形成在第一导电绕组层之上的第二绝缘层。 微磁体装置还包括形成在第二绝缘层上的第一磁芯层,形成在第一磁芯层上方的第三绝缘层和形成在第三绝缘层上的第二磁芯层。 微磁体还包括形成在第二磁芯层上方的第四绝缘层,形成在第四绝缘层之上的第二晶种层,以及形成在第二晶种层上方的第二导电绕组层和通向第一导电绕组层 。 第一和第二导电绕组层形成用于微磁装置的绕组。