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61. 发明申请

US20160085107A1 LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
公开(公告)号：US20160085107A1
公开(公告)日：2016-03-24
申请号：US14959774
申请日：2015-12-04
申请人： Japan Display Inc.
发明人： Shin MORITA
IPC分类号： G02F1/1345 , H01L29/786 , G02F1/1362 , G02F1/1333 , G02F1/1343 , G02F1/1368
CPC分类号： G02F1/13458 , G02F1/133345 , G02F1/1343 , G02F1/134309 , G02F1/134336 , G02F1/1345 , G02F1/13452 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , H01L29/78663
摘要： According to one embodiment, a liquid crystal display device includes a first substrate including an insulative substrate, a first electrically conductive layer, a second electrically conductive layer, a third electrically conductive layer, a fourth electrically conductive layer. The first electrically conductive layer includes a gate line located on the insulative substrate, a common potential line and a first pad portion. The second electrically conductive layer includes a common electrode which is located on the insulative substrate and is put in contact with the common potential line, and a second pad portion stacked on the first pad portion. The fourth electrically conductive layer includes a pixel electrode in which a slit facing the common electrode is formed, and a third pad portion which is put in contact with the second pad portion.

62. 发明申请

US20160062200A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME 审中-公开
标题翻译：薄膜晶体管阵列基板，其制造方法和包括其的液晶显示器
公开(公告)号：US20160062200A1
公开(公告)日：2016-03-03
申请号：US14605853
申请日：2015-01-26
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yang Ho Jung , Hoon Kang , Chul Won Park , Koichi Sugitani , Jin Ho Ju
IPC分类号： G02F1/1362 , H01L29/786 , H01L29/66 , H01L23/532 , H01L21/02 , H01L27/12 , H01L29/49
CPC分类号： G02F1/136286 , G02F1/136209 , G02F2001/13629 , H01L23/53209 , H01L23/53228 , H01L23/53257 , H01L27/124 , H01L27/1292 , H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78603 , H01L29/78633 , H01L29/78669 , H01L2924/0002 , H01L2924/00
摘要： A thin film transistor array substrate. The thin film transistor array substrate includes a stacked structure of: a light permeable substrate having a trench; a light blocking layer partially or entirely accommodated in the trench; a gate wiring formed on the light blocking layer; a semiconductor pattern layer formed on the gate wiring; and a data wiring formed on the semiconductor pattern layer.
摘要翻译：薄膜晶体管阵列基板。薄膜晶体管阵列基板包括：具有沟槽的透光基板的层叠结构; 部分或完全容纳在沟槽中的遮光层; 在所述遮光层上形成的栅极布线; 形成在栅极配线上的半导体图案层; 以及形成在半导体图案层上的数据布线。

63. 发明申请

US20160048065A1 LIQUID CRYSTAL PANEL, LIQUID CRYSTAL DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20160048065A1
公开(公告)日：2016-02-18
申请号：US14922865
申请日：2015-10-26
申请人： Panasonic Liquid Crystal Display Co., Ltd.
发明人： Kikuo ONO
IPC分类号： G02F1/1362 , G02F1/1343 , G02F1/1368
CPC分类号： G02F1/136286 , G02F1/133345 , G02F1/134363 , G02F1/13439 , G02F1/13458 , G02F1/1362 , G02F1/136227 , G02F1/1368 , G02F2001/134372 , G02F2001/136231 , G02F2001/136236 , G02F2001/13629 , G02F2001/136295 , G02F2201/121 , G02F2201/123 , G02F2202/10 , H01L27/1288 , H01L29/41733
摘要： A gate line (40) has a two-layered structure comprising a lower gate line (40a) made of material identical to a pixel electrode (70), and positioned in the same layer as the pixel electrode (70), and an upper gate line (40b) layered on the lower gate line (40b), and made of material having a higher electrical conductivity than the transparent conductive material. According to this structure, it is possible to reduce the number of times performing exposure processes in manufacturing an in-plane switching type liquid crystal panel.

64. 发明申请

US20160048064A1 Display Apparatus 审中-公开
标题翻译：显示装置
公开(公告)号：US20160048064A1
公开(公告)日：2016-02-18
申请号：US14782129
申请日：2014-05-26
申请人： SAKAI DISPLAY PRODUCTS CORPORATION
发明人： Hidetoshi Nakagawa
IPC分类号： G02F1/1362 , G02F1/1339 , G02F1/1333
CPC分类号： G02F1/136227 , G02F1/133345 , G02F1/1339 , G02F1/1345 , G02F1/136286 , G02F2001/13606 , G02F2001/13629
摘要： Provided is a display apparatus which narrows the frame of the panel to a level that the seal for bonding the substrates is not easily broken, and reduces an influence of a parasitic capacitance due to portions in which scanning lines and signal lines intersect. The display apparatus includes two substrates facing each other, a first signal line layer provided on one substrate of the two substrates, a second signal line layer provided in the first signal line layer through a plurality of first insulation layers, and a sealing body which is provided on a peripheral edge part of the one substrate through one or a plurality of second insulation layers having the number of layers less than the number of layers of the first insulation layer, and seals an opposing gap between the two substrates.
摘要翻译：提供一种显示装置，其将面板的框架缩小到用于接合基板的密封不容易断裂的程度，并且减小由于扫描线和信号线相交的部分引起的寄生电容的影响。显示装置包括彼此面对的两个基板，设置在两个基板的一个基板上的第一信号线层，通过多个第一绝缘层设置在第一信号线层中的第二信号线层，以及密封体，通过一个或多个第二绝缘层设置在所述一个基板的外围边缘部分上，所述第二绝缘层的层数小于所述第一绝缘层的层数，并且密封所述两个基板之间的相对的间隙。

65. 发明申请

US20150316802A1 SEMICONDUCTOR APPARATUS, DISPLAY PANEL, AND METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：半导体装置，显示面板及制造半导体装置的方法
公开(公告)号：US20150316802A1
公开(公告)日：2015-11-05
申请号：US14423490
申请日：2013-08-23
申请人： Sharp Kabushiki Kaisha
发明人： Yudai TAKANISHI , Yukinobu NAKATA
IPC分类号： G02F1/1368 , G02F1/1333 , G02F1/1345 , H01L27/12 , H01L29/66 , H01L29/24 , H01L29/45 , H01L21/4757 , H01L21/475 , G02F1/1362 , H01L29/786
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/1345 , G02F1/136227 , G02F1/136286 , G02F2001/136272 , G02F2001/13629 , H01L21/02107 , H01L21/475 , H01L21/47573 , H01L27/1225 , H01L27/124 , H01L27/1244 , H01L27/1248 , H01L27/1259 , H01L29/24 , H01L29/45 , H01L29/66969 , H01L29/7869
摘要： The present invention prevents electric corrosion even when metal lines that may cause problems when in direct contact with ITO are used as source/drain lines, without increasing the number of steps for manufacturing a TFT substrate. A semiconductor apparatus includes TFTs that each include: a gate electrode included in a gate layer 11a provided on a substrate 20; a semiconductor element 15 provided above the gate layer 11a with a gate insulating film 21 positioned in between; and a source electrode and a drain electrode included in a source layer 12a located across the semiconductor element 15. The semiconductor apparatus includes, for a given TFT, a contact hole H1 formed in an interlayer insulating film 22 and planarizing film 23 stacked on the source layer 12a, and auxiliary line layer portions 13P and 13S made of a metal that can prevent electric corrosion between itself and ITO and located to overlap the associated source line, where a pixel electrode 17 is connected with the associated drain electrode 12D via the auxiliary line layer portion 13P. A common electrode 16 is provided to cover the auxiliary line layer portions 13S, and a potential is supplied to the common electrode 16 via the auxiliary line layer portions 13S.
摘要翻译：即使当与ITO直接接触时可能引起问题的金属线作为源极/漏极线路使用时，本发明也可防止电腐蚀，而不增加制造TFT基片的步骤数量。半导体装置包括TFT，每个TFT包括：设置在基板20上的栅极层11a中包括的栅电极; 设置在栅极层11a上方的半导体元件15，栅极绝缘膜21位于其间; 以及包括在跨越半导体元件15的源极层12a中的源电极和漏电极。对于给定的TFT，半导体器件包括形成在层间绝缘膜22中的接触孔H1和堆叠在源极上的平坦化膜23 层12a和由金属制成的辅助线层部分13P和13S，其可以防止其自身和ITO之间的电腐蚀并且与相关联的源极线重叠，其中像素电极17经由辅助线与相关的漏电极12D连接层部13P。设置公共电极16以覆盖辅助线层部分13S，并且经由辅助线层部分13S将电位提供给公共电极16。

66. 发明申请

US20150313014A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20150313014A1
公开(公告)日：2015-10-29
申请号：US14795605
申请日：2015-07-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Mitsuaki OSAME
IPC分类号： H05K1/09 , H05K5/00
CPC分类号： H05K1/09 , G02F1/133345 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , G02F2201/123 , H01L23/50 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L27/3279 , H01L2924/0002 , H05K5/0017 , H01L2924/00
摘要： It is an object of the present invention to prevent an influence of voltage drop due to wiring resistance, trouble in writing of a signal into a pixel, and trouble in gray scales, and provide a display device with higher definition, represented by an EL display device and a liquid crystal display device. In the present invention, a wiring including Cu is provided as an electrode or a wiring used for the display device represented by the EL display device and the liquid crystal display device. Besides, sputtering is performed with a mask to form the wiring including Cu. With such structure, it is possible to reduce the voltage drop and a deadened signal.
摘要翻译：本发明的目的是防止由于布线电阻引起的电压降的影响，将信号写入像素的麻烦以及灰度级的问题，并提供由EL显示器表示的更高清晰度的显示装置装置和液晶显示装置。在本发明中，提供包括Cu的布线作为用于由EL显示装置和液晶显示装置表示的显示装置使用的电极或布线。此外，用掩模进行溅射以形成包括Cu的布线。通过这样的结构，可以降低电压降和衰减信号。

67. 发明申请

US20150287833A1 SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件，显示器件及制造半导体器件和显示器件的方法
公开(公告)号：US20150287833A1
公开(公告)日：2015-10-08
申请号：US14745677
申请日：2015-06-22
申请人： Sharp Kabushiki Kaisha
发明人： Yoshihito HARA , Yukinobu NAKATA
IPC分类号： H01L29/786 , H01L29/423 , H01L29/417 , H01L29/24 , H01L27/12
CPC分类号： H01L27/124 , G02F1/13458 , G02F1/136227 , G02F2001/13629 , G02F2001/136295 , H01L27/1225 , H01L27/1255 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/42384 , H01L29/7869 , H05B33/02
摘要： A semiconductor device (100) according to the present invention includes a thin film transistor (10) having a gate electrode (62a), a first insulating layer (64), an oxide semiconductor layer (66a), a protection layer (68), a source electrode (72as), and a second insulating layer (74). A first connecting portion (30) includes a lower metal layer (72c), an upper metal layer (72c), and an insulating layer (74). A second connecting portion (40) includes a lower metal layer (72d) and an upper conductive layer (17d). A region in which the lower metal layer (72d) is in contact with the upper conductive layer (17d), and a region in which an insulating layer (74) made of a same material as the first insulating layer and a semiconductor layer (66d) made of a same material as the oxide semiconductor layer (66a) are stacked in between the lower metal layer (72d) and the upper conductive layer (17d), are formed in the second connecting portion (40). As a result, a semiconductor device with a higher performance can be provided with a high production efficiency.
摘要翻译：根据本发明的半导体器件（100）包括具有栅电极（62a），第一绝缘层（64），氧化物半导体层（66a），保护层（68），源电极（72as）和第二绝缘层（74）。第一连接部分（30）包括下金属层（72c），上金属层（72c）和绝缘层（74）。第二连接部分（40）包括下金属层（72d）和上导电层（17d）。下部金属层（72d）与上部导电层（17d）接触的区域和由与第一绝缘层相同的材料构成的绝缘层（74）的区域和半导体层（66d））形成在下金属层（72d）和上导电层（17d）之间的与氧化物半导体层（66a）相同的材料制成的第二连接部分（40）。结果，可以提供具有高生产效率的具有更高性能的半导体器件。

68. 发明申请

US20150255487A1 ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE USING SAME 有权
标题翻译：有源矩阵基板和显示器件使用相同
公开(公告)号：US20150255487A1
公开(公告)日：2015-09-10
申请号：US14438697
申请日：2013-11-01
申请人： SHARP KABUSHIKI KAISHA
发明人： Masahiro Yoshida , Isao Ogasawara
IPC分类号： H01L27/12 , G02F1/1362 , G02F1/1368 , H01L29/786
CPC分类号： H01L27/124 , G02F1/1345 , G02F1/136286 , G02F1/1368 , G02F2001/13456 , G02F2001/136254 , G02F2001/13629 , H01L27/1225 , H01L27/1248 , H01L29/78633 , H01L29/7869
摘要： An active matrix substrate (5) includes mounting terminals (DT) for supplying a signal from a driver, draw-out lines (22) connecting the mounting terminals (DT) and gate bus lines (G) or data bus lines (D), first common wires (24) connected in common to the plurality of gate bus lines (G) or the plurality of data bus lines (D), and second switching elements (23) connected between the draw-out lines (22) and the first common wires (24). The draw-out lines (22) include a fan-out portion (FA) that is arranged at an angle with respect to a direction of arrangement of the gate bus lines (G) or the data bus lines (D). At least a portion of the first common wires (24) and at least a portion of the second switching elements (23) are arranged between the fan-out portion (FA) and the mounting terminals (DT).
摘要翻译：有源矩阵基板（5）包括用于提供来自驱动器的信号的安装端子（DT），连接安装端子（DT）和栅极总线（G）或数据总线（D）的引出线（22）与多个栅极总线（G）或多个数据总线（D）共同连接的第一公共电线（24）和连接在引出线（22）和第一普通电线（24）。引出线（22）包括相对于栅极总线（G）或数据总线（D）的布置方向成一定角度布置的扇出部分（FA）。第一公共线（24）的至少一部分和第二开关元件（23）的至少一部分布置在扇出部分（FA）和安装端子（DT）之间。

69. 发明申请

US20150241726A1 LIQUID CRYSTAL DISPLAY PANEL 审中-公开
标题翻译：液晶显示面板
公开(公告)号：US20150241726A1
公开(公告)日：2015-08-27
申请号：US14710313
申请日：2015-05-12
申请人： Japan Display Inc.
发明人： Masato NAKAMURA
IPC分类号： G02F1/1339 , G02F1/1333 , G02F1/1362
CPC分类号： G02F1/13394 , G02F1/133345 , G02F1/13392 , G02F1/136209 , G02F1/136286 , G02F2001/133738 , G02F2001/13398 , G02F2001/13629 , G02F2201/40
摘要： According to one embodiment, a liquid crystal display panel includes an array substrate, a counter-substrate, a liquid crystal layer and a columnar spacer. The array substrate includes a wiring including projection portion which form a dot pattern with light-blocking properties, and a first horizontal alignment film. The counter-substrate includes a second horizontal alignment film. The columnar spacer is disposed between the array substrate and the counter-substrate and is located within the dot pattern.
摘要翻译：根据一个实施例，液晶显示面板包括阵列基板，对向基板，液晶层和柱状间隔物。阵列基板包括具有形成具有阻光性的点图案的突出部的布线和第一水平取向膜。相对基板包括第二水平取向膜。柱状间隔物设置在阵列基板和对置基板之间并且位于点图案内。

70. 发明申请

US20150214376A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150214376A1
公开(公告)日：2015-07-30
申请号：US14550091
申请日：2014-11-21
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Junichi Koezuka , Yukinori Shima , Masami Jintyou , Takashi Hamochi , Satoshi Higano , Shunpei Yamazaki
IPC分类号： H01L29/786 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/45
CPC分类号： H01L29/7869 , G02F1/136286 , G02F1/1368 , G02F2001/13629 , G02F2001/136295 , H01L23/53233 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/4966 , H01L29/786 , H01L2924/0002 , H01L2924/00
摘要： To provide a novel semiconductor device which includes a transistor and a metal film containing Cu for a wiring, a signal line, or the like. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to a source or a drain of the first transistor, and the second wiring is electrically connected to a gate of the second transistor. The first wiring and the second wiring each include a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu—X alloy film in the first wiring is connected to the Cu—X alloy film in the second wiring.
摘要翻译：提供一种新颖的半导体器件，其包括晶体管和含有Cu的金属膜用于布线，信号线等。半导体器件包括第一布线，第二布线，第一晶体管和第二晶体管。第一布线电连接到第一晶体管的源极或漏极，并且第二布线电连接到第二晶体管的栅极。第一布线和第二布线均包括Cu-X合金膜（X是Mn，Ni，Cr，Fe，Co，Mo，Ta或Ti）。第一布线中的Cu-X合金膜与第二布线中的Cu-X合金膜连接。

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