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    • 66. 发明授权
    • Thin film for reflection film or for semi-transparent reflection film, sputtering target and optical recording medium
    • 用于反射膜或半透明反射膜,溅射靶和光记录介质的薄膜
    • US07951442B2
    • 2011-05-31
    • US11915434
    • 2006-11-17
    • Tomokazu ObataHiroshi Yanagihara
    • Tomokazu ObataHiroshi Yanagihara
    • B32B3/02
    • C23C14/3414C23C14/0688G02B1/105G02B1/14G02B5/0808G11B7/259Y10T428/21
    • A thin film for a reflection film or for a semi-transparent reflection film, having a compound phase formed of at least one chemical compound selected from the group consisting of a nitride, an oxide, a composite oxide, a nitroxide, a carbide, a sulfide, a chloride, a silicide (excluding silicon), a fluoride, a boride, a hydride, a phosphide, a selenide and a telluride of aluminum, magnesium, tin, zinc, indium, titanium, zirconium, manganese and silicon, dispersed in a matrix formed of silver or a silver alloy. The thin film may disperse at least one compound selected from the group consisting of a nitride, an oxide, a composite oxide, a nitroxide, a carbide, a sulfide, a chloride, a silicide, a fluoride, a boride, a hydride, a phosphide, a selenide and a telluride of silver, gallium, palladium or copper, in addition to aluminum or the like, therein. The thin film of the present invention keeps its reflectance without significant loss even after a long period of use, and can prolong the life of various devices which comprise the thin film as a reflection film, such as an optical recording medium and a display. The thin film can be also applied to semi-reflective/semi-transparent film used in the optical recording medium.
    • 一种用于反射膜或半透明反射膜的薄膜,其具有由至少一种选自氮化物,氧化物,复合氧化物,氮氧化物,碳化物, 硫化物,氯化物,硅化物(不含硅),氟化物,硼化物,氢化物,磷化物,硒化物和铝,镁,锡,锌,铟,钛,锆,锰和硅的碲化物,分散在 由银或银合金形成的基体。 该薄膜可以分散至少一种选自氮化物,氧化物,复合氧化物,氮氧化物,碳化物,硫化物,氯化物,硅化物,氟化物,硼化物,氢化物, 磷化物,硒化物和银,镓,钯或铜的碲化物,以及铝等。 本发明的薄膜即使在长时间使用后也保持其反射率而不会显着损失,并且可以延长包括诸如光学记录介质和显示器的反射膜的薄膜的各种装置的寿命。 该薄膜也可以应用于光记录介质中使用的半反射/半透明膜。
    • 68. 发明申请
    • Sputtering Target with Low Generation of Particles
    • 溅射靶与低产生粒子
    • US20110048935A1
    • 2011-03-03
    • US12935014
    • 2009-03-27
    • Kei Koide
    • Kei Koide
    • C23C14/34B24B1/00
    • C23C14/3414C23C14/0688
    • Provided is a sputtering target with low generation of particles having a target surface in which intermetallic compounds, oxides, carbides, carbonitrides and other substances without ductility exist in a highly ductile matrix phase at a volume ratio of 1 to 50%, wherein a center-line average surface roughness Ra is 0.1 μm or less, a ten-point average roughness Rz is 0.4 μm or less, a distance between local peaks (roughness motif) AR is 120 μm or less, and an average length of waviness motif AW is 1500 μm or more. Provided are a sputtering target wherein the generation of nodules and particles upon sputtering can be prevented or inhibited by improving the target surface, which contains large amounts of substances without ductility; and a surface processing method thereof.
    • 本发明提供一种溅射靶,其具有目标表面,其中金属间化合物,氧化物,碳化物,碳氮化物和其它没有延展性的物质以1〜50%的体积比存在于高延展性基体相中, 线平均表面粗糙度Ra为0.1μm以下,十点平均粗糙度Rz为0.4μm以下,局部峰(粗糙图案)AR之间的距离为120μm以下,波纹图案AW的平均长度为1500 μm以上。 提供一种溅射靶,其中通过改善包含大量没有延展性的物质的目标表面,可以防止或抑制溅射时产生结节和颗粒; 及其表面处理方法。