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61. 发明授权

US09725305B2 Dual cavity pressure structures 有权
公开(公告)号：US09725305B2
公开(公告)日：2017-08-08
申请号：US15071499
申请日：2016-03-16
申请人： InvenSense, Inc.
发明人： Jong Il Shin , Peter Smeys , Daesung Lee
IPC分类号： H01L21/302 , B81C1/00 , B81B7/02
CPC分类号： B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81C1/00214 , B81C1/00293 , B81C2203/0118 , B81C2203/035 , G01P15/0802
摘要： Provided herein is a method including forming a trench in a handle substrate, and a trench lining is formed in the trench. A first cavity and a second cavity are formed in the handle substrate, wherein the first cavity is connected to the trench. A first MEMS structure and the handle substrate are sealed for maintaining a first pressure within the trench and the first cavity. A second MEMS structure and the handle substrate are sealed for maintaining the first pressure within the second cavity. A portion of the trench lining is exposed, and the first pressure is changed to a second pressure within the first cavity. The first cavity and the trench are sealed to maintain the second pressure within the trench and the first cavity.

62. 发明授权

US09334157B2 MEMS device and formation method thereof 有权
标题翻译： MEMS器件及其形成方法
公开(公告)号：US09334157B2
公开(公告)日：2016-05-10
申请号：US14641657
申请日：2015-03-09
申请人： Semiconductor Manufacturing International (Shanghai) Corporation
发明人： Wei Xu , Guoan Liu
IPC分类号： G01P15/08 , B81B7/00 , B81C1/00
CPC分类号： B81B7/0074 , B81B2201/0235 , B81B2201/0264 , B81C1/00182 , B81C1/00214
摘要： The present disclosure provides MEMS devices and their fabrication methods. A first dielectric layer is formed on a first substrate including integrated circuits therein. One or more first metal connections and second metal connections are formed in the first dielectric layer and are electrically connected to the integrated circuits. A second dielectric layer is formed on the first dielectric layer. An acceleration sensor is formed in the second dielectric layer to electrically connect to the one or more first metal connections. A second substrate is bonded to the second dielectric layer. One or more first metal vias are formed in the second substrate and in the second dielectric layer to electrically connect to the second metal connections. A pressure sensor is formed on the second substrate to electrically connect to the first metal vias.
摘要翻译：本公开提供了MEMS器件及其制造方法。在其上包括集成电路的第一基板上形成第一电介质层。一个或多个第一金属连接和第二金属连接形成在第一电介质层中并且电连接到集成电路。在第一电介质层上形成第二电介质层。加速度传感器形成在第二电介质层中以电连接到一个或多个第一金属连接。第二基板结合到第二介电层。一个或多个第一金属通孔形成在第二基板和第二电介质层中以电连接到第二金属连接。压力传感器形成在第二基板上以电连接到第一金属通孔。

63. 发明授权

US09323047B2 Method of manufacturing a MEMS micro-mirror assembly 有权
标题翻译：制造MEMS微镜组件的方法
公开(公告)号：US09323047B2
公开(公告)日：2016-04-26
申请号：US14382734
申请日：2013-02-21
申请人： Intel Corporation
发明人： Faouzi Khechana , Nicolas Abele
IPC分类号： G02B26/08 , B81C3/00 , H05K1/18 , H05K3/32 , B81C1/00 , G02B7/182 , G02B26/10 , H05K1/11
CPC分类号： G02B26/085 , B81B7/007 , B81B2201/042 , B81B2207/098 , B81C1/00214 , B81C1/00873 , B81C3/005 , B81C2203/054 , B81C2203/057 , G02B7/1821 , G02B26/0833 , G02B26/105 , G03B21/008 , H01L2224/48091 , H01L2924/1461 , H05K1/0269 , H05K1/0281 , H05K1/118 , H05K1/189 , H05K3/328 , H05K3/34 , H05K2201/083 , H05K2201/10083 , H05K2203/049 , Y10T29/4913 , H01L2924/00014 , H01L2924/00
摘要： According to the present invention there is provided a method of manufacturing a MEMS micro mirror assembly (250), comprising the step of mounting a PCB board (205) on a metallic plate (206), mounting a MEMS device (240) on the PCB board (205), wherein the MEMS device (240) comprises a MEMS die (241) and a magnet (230).
摘要翻译：根据本发明，提供了一种制造MEMS微镜组件（250）的方法，包括将PCB板（205）安装在金属板（206）上的步骤，将MEMS器件（240）安装在PCB上板（205），其中MEMS器件（240）包括MEMS管芯（241）和磁体（230）。

64. 发明申请

US20160008849A1 ULTRASONIC TRANSDUCER, METHOD OF PRODUCING SAME, AND ULTRASONIC PROBE USING SAME 有权
标题翻译：超声波传感器，其制造方法和使用其的超声波探头
公开(公告)号：US20160008849A1
公开(公告)日：2016-01-14
申请号：US14799632
申请日：2015-07-15
申请人： Hitachi Medical Corporation
发明人： Shuntaro MACHIDA , Takashi KOBAYASHI
IPC分类号： B06B1/02
CPC分类号： B06B1/0292 , B81C1/00158 , B81C1/00182 , B81C1/00214 , B81C1/00476 , B81C1/00531 , B81C1/00611 , B81C2201/0104 , B81C2201/0107 , B81C2201/0109 , C09K13/00 , C23F4/00 , H01L21/30604 , H01L29/84 , Y10T29/49156
摘要： Disclosed is an ultrasonic transducer that is provided with: a bottom electrode; an electric connection part which is connected to the bottom electrode from the bottom of the bottom electrode; a first insulating film which is formed so as to cover the bottom electrode; a cavity which is formed on the first insulating film so as to overlap the bottom electrode when seen from above; a second insulating film which is formed so as to cover the cavity; and a top electrode which is formed on the second insulating film so as to overlap the cavity when seen from above. The electric connection part to the bottom electrode is positioned so as to not overlap the cavity when seen from above.
摘要翻译：公开了一种超声波换能器，其具备：底部电极; 电连接部，其从所述底部电极的底部连接到所述底部电极; 形成为覆盖底部电极的第一绝缘膜; 形成在第一绝缘膜上以便从上方观察时与底部电极重叠的空腔; 形成为覆盖空腔的第二绝缘膜; 以及形成在第二绝缘膜上以从上方观察时与空腔重叠的顶部电极。位于底部电极的电连接部分被定位为当从上方观察时不与腔体重叠。

65. 发明授权

US09046545B2 Semiconductor device using a silicon wafer with a pattern arrangement 有权
标题翻译：使用具有图案布置的硅晶片的半导体器件
公开(公告)号：US09046545B2
公开(公告)日：2015-06-02
申请号：US12963862
申请日：2010-12-09
申请人： Tatsuro Takagaki
发明人： Tatsuro Takagaki
IPC分类号： H01L29/06 , H01L21/00 , B65G47/90 , G01P15/08 , H01L41/332 , H01L23/544 , B81C1/00 , G01P15/12 , G01P15/125 , G01P15/18
CPC分类号： H01L27/0207 , B81B2201/0235 , B81B2203/0136 , B81B2207/053 , B81C1/00214 , G01P15/0802 , G01P15/123 , G01P15/125 , G01P15/18 , G01P2015/0814 , G01P2015/0842 , H01L21/0201 , H01L23/544 , H01L41/332 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprising: a support part; a flexible part, one end of which is supported by the support part; a spindle part supported by the other end of the flexible part; a displacement detection means which detects displacement of the spindle part; and an aperture part arranged adjacent to the spindle part; wherein a plurality of patterns comprised from the aperture part is formed on a silicon wafer parallel to a first direction and a second direction which intersects the first direction, the plurality of patterns include one or more patterns arranged in a straight line in the first direction and the second direction, the plurality of patterns is arranged so that an axis in which a cleavage plane of the silicon wafer and a surface arranged with the pattern on the silicon wafer intersect, and the first direction are different.
摘要翻译：一种半导体器件，包括：支撑部分; 柔性部分，其一端由支撑部分支撑; 由所述柔性部件的另一端支撑的主轴部; 检测所述主轴部的位移的位移检测单元; 以及与所述主轴部相邻配置的开口部; 其特征在于，在与所述第一方向相交的第一方向和第二方向平行的硅晶片上形成有从所述开口部构成的多个图案，所述多个图案包括沿所述第一方向排列成直线的一个或多个图案，在第二方向上，多个图案被布置成使得硅晶片的解理面和硅晶片上的图案布置的表面相交的轴与第一方向不同。

66. 发明申请

US20150024533A1 METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US20150024533A1
公开(公告)日：2015-01-22
申请号：US14508194
申请日：2014-10-07
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Yi-Hsien CHANG , Chun-Ren CHENG , Yi-Shao LIU , Allen Timothy CHANG , Ching-Ray CHEN , Yeh-Tseng LI , Wen-Hsiang LIN
IPC分类号： B81C1/00
CPC分类号： B81C1/00349 , B81B2201/042 , B81C1/00111 , B81C1/00206 , B81C1/00214 , B82Y20/00 , G01N27/44791
摘要： A method of forming a semiconductor device includes depositing a light reflecting layer over a substrate. The method also includes forming a protection layer over the light reflecting layer. The method further includes forming an anti-reflective coating (ARC) layer over the protection layer. The method additionally includes forming an opening in the ARC layer, the protection layer and the light reflecting layer exposing the substrate. The method also includes removing the ARC layer in a wet solution comprising H2O2, the ARC layer being exposed to the H2O2 at a flow rate greater than about 10 standard cubic centimeters per minute (sccm).
摘要翻译：形成半导体器件的方法包括在衬底上沉积光反射层。该方法还包括在光反射层上形成保护层。该方法还包括在保护层上形成抗反射涂层（ARC）层。该方法还包括在ARC层中形成开口，保护层和曝光衬底的光反射层。该方法还包括在包含H 2 O 2的湿溶液中去除ARC层，ARC层以大于约10标准立方厘米每分钟（sccm）的流速暴露于H 2 O 2。

67. 发明申请

US20130256259A1 MEMS NANOSTRUCTURES AND METHODS OF FORMING THE SAME 有权
标题翻译： MEMS纳米结构及其形成方法
公开(公告)号：US20130256259A1
公开(公告)日：2013-10-03
申请号：US13465928
申请日：2012-05-07
申请人： Yi-Hsien CHANG , Chun-Ren CHENG , Yi-Shao LIU , Allen Timothy CHANG , Ching-Ray CHEN , Yeh-Tseng LI , Wen-Hsiang LIN
发明人： Yi-Hsien CHANG , Chun-Ren CHENG , Yi-Shao LIU , Allen Timothy CHANG , Ching-Ray CHEN , Yeh-Tseng LI , Wen-Hsiang LIN
IPC分类号： B44C1/22 , B05D3/04 , B05D5/06
CPC分类号： B81C1/00349 , B81B2201/042 , B81C1/00111 , B81C1/00206 , B81C1/00214 , B82Y20/00 , G01N27/44791
摘要： A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.
摘要翻译： MEMS纳米结构的形成方法包括：衬底的一部分被凹入以在衬底中形成多个台面。多个台面中的每一个具有顶表面和侧壁表面。光反射层沉积在衬底上，从而覆盖每个台面的顶表面和侧壁表面。在光反射层上形成保护层。在保护层上形成ARC层。在每个台面上的ARC层上形成光致抗蚀剂层的开口。通过开口去除ARC层，保护层和光反射层的一部分以暴露每个台面的顶表面。去除每个台面的顶表面上的光致抗蚀剂层和ARC层。

68. 发明授权

US08361297B2 Bottom-up assembly of structures on a substrate 有权
标题翻译：底部结构的自下而上组装
公开(公告)号：US08361297B2
公开(公告)日：2013-01-29
申请号：US12351509
申请日：2009-01-09
申请人： Theresa S. Mayer , Christine D. Keating , Mingwei Li , Thomas Morrow , Jaekyun Kim
发明人： Theresa S. Mayer , Christine D. Keating , Mingwei Li , Thomas Morrow , Jaekyun Kim
IPC分类号： B01D57/02 , G01N27/453
CPC分类号： H01L29/0665 , B81B2203/0109 , B81B2207/056 , B81C1/00214 , B82Y10/00 , H01L29/0673 , H01L29/125 , H01L29/1606 , H01L29/772 , H01L29/7781 , H01L51/0037 , H01L51/0512
摘要： Examples of the present invention include methods of assembling structures, such as nanostructures, at predetermined locations on a substrate. A voltage between spaced-apart electrodes supported by substrate attracts the structures to the substrate, and positional registration can be provided the substrate using topographic features such as wells. Examples of the present invention also include devices, such as electronic and optoelectronic devices, prepared by such methods.
摘要翻译：本发明的实例包括在基底上的预定位置处组装诸如纳米结构的结构的方法。由衬底支撑的间隔开的电极之间的电压将结构吸引到衬底，并且可以使用诸如孔的地形特征为衬底提供位置配准。本发明的实例还包括通过这些方法制备的装置，例如电子和光电器件。

69. 发明授权

US07943052B2 Method for self-assembling microstructures 有权
标题翻译：自组装微结构的方法
公开(公告)号：US07943052B2
公开(公告)日：2011-05-17
申请号：US11866273
申请日：2007-10-02
申请人： Enboa Wu , Chia-Shou Chang
发明人： Enboa Wu , Chia-Shou Chang
IPC分类号： H01B13/00
CPC分类号： B23K3/0623 , B23K2101/40 , B81C1/00214 , B81C3/002 , H01L24/95 , H01L25/50 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/95001 , H01L2224/95085 , H01L2224/95092 , H01L2224/95122 , H01L2224/95146 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/12041 , H01L2924/12044 , H01L2924/14 , H01L2924/15153 , H01L2924/15155 , H01L2924/15165 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A method for self-assembling a plurality of microstructures onto a substrate comprising using a bonding material to make the microstructure assembled onto the substrate by a physical attraction force. The microstructures are self-aligned with the substrate, and further permanently fixed on and electrical connection with the substrate by the solder bumps between the microstructures and the substrate, which is formed by the solder bumps via reflow process. There is no need for the using of the conventional pick-and-place device in the present method. The present method could be applied to light emitting diodes, RFID tags, micro-integrated circuits or other types of microstructures.
摘要翻译：一种用于将多个微结构自组装到衬底上的方法，包括使用结合材料通过物理吸引力将微结构组装在衬底上。微结构与衬底自对准，并且通过由微焊料和衬底之间的焊料凸块进一步永久地固定在衬底上并与衬底电连接，焊料凸块通过回焊工艺由焊料凸块形成。在本方法中不需要使用传统的拾放装置。本方法可以应用于发光二极管，RFID标签，微集成电路或其他类型的微结构。

70. 发明申请

US20100147365A1 HIGH FIDELITY NANO-STRUCTURES AND ARRAYS FOR PHOTOVOLTAICS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：高光泽纳米结构和光伏阵列及其制造方法
公开(公告)号：US20100147365A1
公开(公告)日：2010-06-17
申请号：US12299839
申请日：2007-05-09
申请人： Joseph M. DeSimone , Ginger Denison Rothrock , Zhilian Zhou , Edward T. Samulski , Meredith Hampton , Stuart Williams
发明人： Joseph M. DeSimone , Ginger Denison Rothrock , Zhilian Zhou , Edward T. Samulski , Meredith Hampton , Stuart Williams
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/18 , B29C37/0003 , B29C39/36 , B81C1/00214 , B81C99/0085 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , G03F7/0002 , H01L31/0352 , H01L51/0004 , H01L51/0036 , H01L51/0047 , H01L51/422 , H01L51/4253 , Y02E10/549
摘要： A photovoltaic device includes an electron accepting material and an electron donating material. One of the electron accepting or donating materials is configured and dimensioned as a first component of a bulk heterojunction with a predetermined array of first structures, each first structure is substantially equivalent in three dimensional shape, has a substantially equivalent cross-sectional dimension, and where each first structure of the array of first structures has a substantially equivalent orientation with respect to adjacent first structures of the predetermined array forming a substantially uniform array.
摘要翻译：光电器件包括电子接收材料和给电子材料。电子接受或捐赠材料之一被配置和定尺寸为具有预定阵列的第一结构的本体异质结的第一部件，每个第一结构基本上相当于三维形状，具有基本相当的横截面尺寸，并且其中第一结构阵列的每个第一结构相对于预定阵列的相邻第一结构具有基本上等同的取向，形成基本均匀的阵列。

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