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    • 61. 发明申请
    • RADIATION TOLERANT SRAM BIT
    • 辐射稳定SRAM位
    • US20090141539A1
    • 2009-06-04
    • US12345388
    • 2008-12-29
    • John McCollum
    • John McCollum
    • G11C11/00G11C7/00
    • G11C11/4125G11C5/005
    • In an integrated circuit, a radiation tolerant static random access memory device comprising a first inverter having an input and an output, a second inverter having an input and an output. A first resistor is coupled between the output of the first inverter and the input of the second inverter. A second resistor is coupled between the output of the second inverter and the input of the first inverter. A first write transistor is coupled to the output of the first inverter and has a gate coupled to a source of a first set of write-control signals and a second write transistor is coupled to the output of the second inverter and has a gate coupled to said source of a second set of write-control signals. Finally, a pass transistor has a gate coupled to the output of on of the first and second inverters.
    • 在集成电路中,包括具有输入和输出的第一反相器的辐射耐受静态随机存取存储器件,具有输入和输出的第二反相器。 第一电阻器耦合在第一反相器的输出端和第二反相器的输入端之间。 第二电阻耦合在第二反相器的输出端和第一反相器的输入端之间。 第一写入晶体管耦合到第一反相器的输出,并且具有耦合到第一组写入控制信号的源的栅极,并且第二写入晶体管耦合到第二反相器的输出,并且具有耦合到 所述源的第二组写控制信号。 最后,传输晶体管具有耦合到第一和第二反相器的输出的栅极。