会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 66. 发明授权
    • Propylene/ethylene block copolymer composition for exterior automotive part
    • 用于外部汽车部件的丙烯/乙烯嵌段共聚物组合物
    • US06818690B1
    • 2004-11-16
    • US09701376
    • 2000-11-30
    • Yutaka KobayashiKenji TanakaYoshihisa Saeki
    • Yutaka KobayashiKenji TanakaYoshihisa Saeki
    • C08K552
    • C08J3/12C08F297/00C08F297/06C08J2353/00C08K5/523C08L53/00
    • A propylene-ethylene block copolymer composition having sufficient stiffness and mechanical strength required for the automobile exterior arts can be produced at low cost since no additional steps for blending other rubber components are required. The composition contains methylenebis(2,4-di-t-butylphenol) acid sodium phosphate which is blended with the propylene-ethylene block copolymer in an amount of 300 to 2,000 ppm and has (a) a melt flow rate of 10 to 18 g/10 min when measured at 230° C. under a load of 2.16 kg (21.2N); (b) an ordinary temperature xylene insoluble having a stereoregularity index fraction of 98.9% or higher when measured by 13C-NMR; and (c) an ordinary temperature xylene soluble having a content of 22 to 28% by weight has a single component with respect to a relaxation time T1 measured by pulse NMR and satisfies the following formula (I): y≦0.0014x3−0.0897x2−1.0593x+231.6  (I) where x is an ethylene content (% by weight) measured by 13C-NMR and y is the relaxation time T1 (msec) measured by pulse NMR.
    • 可以以低成本制造具有足够的刚度和机械强度的丙烯 - 乙烯嵌段共聚物组合物,因为不需要用于混合其它橡胶组分的附加步骤。 该组合物含有与丙烯 - 乙烯嵌段共聚物共混的亚甲基双(2,4-二叔丁基苯酚)酸式磷酸钠,其量为300至2000ppm,并且(a)熔体流动速率为10至18g 在2.16kg(21.2N)的负荷下,在230℃下测定,为10分钟。 (b)通过13 C-NMR测定的立构规整度指数分数为98.9%以上的常温二甲苯不溶物; 和(c)相对于通过脉冲NMR测定的弛豫时间T1,具有22〜28重量%含量的常温二甲苯可溶物具有单一成分,满足下式(I):其中,x为乙烯含量( 重量%),通过13 C-NMR测量,y是通过脉冲NMR测量的弛豫时间T1(msec)。
    • 67. 发明授权
    • Connector
    • 连接器
    • US06692294B2
    • 2004-02-17
    • US10096467
    • 2002-03-12
    • Yutaka Kobayashi
    • Yutaka Kobayashi
    • H01R907
    • H01R12/79H01R12/775
    • A connector has a plug-side housing and a plurality of concave core holding grooves into which cores of shielded electric wires of a flat cable are inserted individually. The core holding grooves are deeper than the outer diameter of each core. The cores are inserted into the core wire-holding grooves. Thus even if the plug-side housing deforms, the cores remain accommodated in the core holding grooves. The housing also has a retainer-mounting opening into which a retainer can be mounted. The retainer retains each core by sandwiching the core between the retainer and the housing.
    • 连接器具有插头侧外壳和多个凹芯保持槽,扁平电缆的屏蔽电线的芯分别插入其中。 芯部保持槽比每个芯的外径更深。 芯部插入到芯线保持槽中。 因此,即使插头侧壳体变形,芯部保持容纳在芯保持槽中。 壳体还具有保持器安装开口,保持器可以安装在该开口中。 保持器通过将芯夹在保持器和壳体之间来保持每个芯。
    • 68. 发明授权
    • Lever-type connector
    • 杠杆式连接器
    • US06354852B2
    • 2002-03-12
    • US09851833
    • 2001-05-09
    • Yutaka NoroYutaka Kobayashi
    • Yutaka NoroYutaka Kobayashi
    • H01R1362
    • H01R13/62938H01R13/5219
    • A lever-installed cover (50) is inserted into a lever accommodation space (404) disposed between a wall (41) of a female housing (21) and an accommodation wall (42). A reinforcing wall (43) connects a front end of the wall (41) and that of the accommodation wall (42) to each other. An opening (45) through which a follower pin (17) of a male connector (10) can pass is formed on the reinforcing wall (43). The opening (45) matches an entrance of a cam groove (74) of the lever (70) when the lever (70) is located at an initial position. Both connectors (10) and (20) are fitted on each other and removed from each other by rotating the lever (70), with the cam groove (74) of the lever (70) engaging the follower pin (17). The lever (70) can be rotated back to the initial position to separate the connectors (10) and (20) from each other. The follower pin (17) slides on the guide portion (81) formed at the rear edge of the open portion (45). Thus, the follower pin (17) can be guided smoothly to the open portion (45).
    • 杠杆安装的盖子(50)插入设置在阴壳体(21)的壁(41)和容纳壁(42)之间的杆容纳空间(404)中。 加强壁(43)将壁(41)的前端和容纳壁(42)的前端彼此连接。 在加强壁(43)上形成有阳连接器(10)的从动销(17)可穿过的开口(45)。 当杆(70)位于初始位置时,开口(45)匹配杆(70)的凸轮槽(74)的入口。 两个连接器(10)和(20)通过旋转杆(70)而彼此装配并且通过杠杆(70)的凸轮槽(74)接合从动销(17)而相互拆卸。 杠杆(70)可以旋转回到初始位置,以将连接器(10)和(20)彼此分开。 从动销(17)在形成在开口部分(45)的后边缘处的引导部分(81)上滑动。 因此,从动销(17)能够平滑地被引导至开口部(45)。
    • 69. 发明授权
    • Austenite stainless steel
    • 奥氏体不锈钢
    • US5858129A
    • 1999-01-12
    • US903103
    • 1997-07-30
    • Yutaka KobayashiTakeya TogeYoshito Fujiwara
    • Yutaka KobayashiTakeya TogeYoshito Fujiwara
    • C22C38/00C22C30/00C22C38/54C22C38/38
    • C22C30/00
    • Disclosed is an austenite stainless steel comprising: no more than 0.05% by weight of C; no more than 0.25% by weight of Si; no more than 0.40% by weight of Mn; no more than 0.040% by weight of P; no more than 0.003% by weight of S; 30.0 to 40.0% by weight of Ni; 20.0 to 26.0% by weight of Cr; 5.0 to 8.0% by weight of Mo; no more than 0.1% by weight of Al; 0.001 to 0.010% by weight of B; 0.15 to 0.30% by weight of N; and balance of Fe and inevitable impurity. The austenite stainless steel satisfying formula (1) and (2) mentioned below (wherein "Cr", "Mo", "N", "Si" and "Mn" mean content of each element).Cr+3.3Mo+20N.gtoreq.51 (1)5Si+Mn
    • 公开了一种奥氏体不锈钢,其包含:不超过0.05重量%的C; 不超过0.25重量%的Si; 不超过0.40重量%的Mn; 不超过0.040重量%的P; 不超过0.003%的S; 30.0〜40.0重量%的Ni; 20.0〜26.0重量%的Cr; 5.0〜8.0重量%的Mo; 不超过0.1重量%的Al; 0.001〜0.010重量%的B; 0.15〜0.30重量%的N; 并且Fe和不可避免的杂质的平衡。 满足下述式(1)和(2)的奥氏体不锈钢(其中“Cr”,“Mo”,“N”,“Si”和“Mn”表示各元素的含量)Cr + 3.3Mo + 20N> / = 51(1)5Si + Mn <32-(Cr + Mo)(2)
    • 70. 发明授权
    • SRAM having load transistor formed above driver transistor
    • 具有形成在驱动晶体管上方的负载晶体管的SRAM
    • US5834851A
    • 1998-11-10
    • US460641
    • 1995-06-02
    • Shuji IkedaSatoshi MeguroSoichiro HashibaIsamu KuramotoAtsuyoshi KoikeKatsuro SasakiKoichiro IshibashiToshiaki YamanakaNaotaka HashimotoNobuyuki MoriwakiShigeru TakahashiAtsushi HiraishiYutaka KobayashiSeigou Yukutake
    • Shuji IkedaSatoshi MeguroSoichiro HashibaIsamu KuramotoAtsuyoshi KoikeKatsuro SasakiKoichiro IshibashiToshiaki YamanakaNaotaka HashimotoNobuyuki MoriwakiShigeru TakahashiAtsushi HiraishiYutaka KobayashiSeigou Yukutake
    • H01L27/11
    • H01L27/11H01L27/1104Y10S257/903Y10S257/904
    • Herein disclosed is a semiconductor integrated circuit device comprising a SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs. The gate electrodes of the drive MISFETs and the gate electrodes of the transfer MISFETs of the memory cell, and the word lines are individually formed of different conductive layers. The drive MISFETs and the transfer MISFETs are individually arranged to cross each other in the gate length direction. The word lines are extended in the gate length direction of the gate electrodes of the drive MISFETs and caused to cross the gate electrodes of the drive MISFETs partially. The two transfer MISFETs of the memory cell have their individual gate electrodes connected with two respective word lines spaced from each other and extended in an identical direction. The region defined by the two word lines is arranged therein with the two drive MISFETs and the source lines.The source line is formed of a conductive layer identical to that of the word line. The individual data lines of the complementary data line are formed of an identical conductive layer which is different from that of the word line and the source line. The identical conductive layer between the word line and source line and the complementary data line is formed with two word lines: a main word line extended in the first direction identical to that of the word line and source line and used by adopting the divided word line system: and a sub-word line used by adopting the double word line system.
    • 这里公开了一种半导体集成电路器件,其包括具有其存储单元的SRAM,SRAM由通过字线控制的转移MISFET和驱动MISFET构成。 驱动MISFET的栅电极和存储单元的转移MISFET的栅电极和字线分别由不同的导电层形成。 驱动MISFET和转移MISFET分别布置成在栅极长度方向上彼此交叉。 字线在驱动MISFET的栅电极的栅极长度方向上延伸,并且部分地与驱动MISFET的栅电极交叉。 存储器单元的两个转移MISFET的各自的栅极电极与彼此间隔开并沿相同方向延伸的两个相应字线连接。 由两个字线限定的区域配置有两个驱动MISFET和源极线。 源极线由与字线的导电层相同的导电层形成。 互补数据线的各个数据线由与字线和源极线不同的导电层形成。 字线和源极线与互补数据线之间的相同的导电层由两条字线形成:主字线在第一方向上延伸,与字线和源极线相同,并通过采用分割字线 系统:采用双字线系统使用的子字线。