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    • 64. 发明申请
    • Co-Cr-Pt-B-Based Alloy Sputtering Target and Method for Producing Same
    • Co-Cr-Pt-B系合金溅射靶及其制备方法
    • US20130341184A1
    • 2013-12-26
    • US14003621
    • 2012-05-22
    • Yuto MorishitaShin-ichi OginoYuichiro Nakamura
    • Yuto MorishitaShin-ichi OginoYuichiro Nakamura
    • C23C14/16C22F1/16
    • C23C14/165C22C1/02C22C19/07C22F1/10C22F1/16C23C14/3414G11B5/851
    • Provided is a Co—Cr—Pt—B-based alloy sputtering target having no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm×100 μm area (field of view). Additionally provided is a method for producing this Co—Cr—Pt—B-based alloy sputtering target including the steps of hot forging or hot rolling a Co—Cr—Pt—B-based alloy cast ingot, thereafter performing cold rolling or cold forging thereto at an elongation rate of 4% or less, and machining the ingot to prepare a target having no more than 10 cracks of 0.1 to 20 μm in a B-rich phase in a 100 μm×100 μm area (field of view), or, hot forging or hot rolling the ingot, thereafter quenching the ingot to −196° C. to 100° C., and machining the ingot to prepare a target. The target of the present invention has high magnetic flux density and few microcracks in a B-rich layer, and thus stabilizes discharge and minimizes arcing.
    • 提供一种Co-Cr-Pt-B系合金溅射靶,其在100mum×100mum面积(视野)的富B相中不超过10个0.1〜20个的裂纹。 另外提供了一种用于制造该Co-Cr-Pt-B系合金溅射靶的方法,其包括热锻或热轧Co-Cr-Pt-B基合金铸锭的步骤,然后进行冷轧或冷锻 以4%以下的伸长率进行加工,并且在100mum×100mum面积(视野)的B富相中,机加工锭以制备不超过10个0.1〜20个的裂纹的靶, 或热锻造或热轧锭,然后将锭淬火至-196℃至100℃,并加工锭以制备靶材。 本发明的目标在富B层中具有高磁通密度和微裂纹,从而稳定放电并使电弧放电最小化。