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61. 发明授权

US09461243B2 STT-MRAM and method of manufacturing the same 有权
标题翻译： STT-MRAM及其制造方法
公开(公告)号：US09461243B2
公开(公告)日：2016-10-04
申请号：US14147493
申请日：2014-01-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/02 , H01L43/12 , H01L21/033 , H01L21/64 , G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A planar STT-MRAM comprises apparatus, a method of operating a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having spin-transfer torques acting on a recording layer from a MTJ stack and a novel magnetoresistance with a spin-valve layer. The spin-valve layer is field-reversible between two stable magnetization states either parallel or anti-parallel to the fixed reference layer magnetization through a set/reset current pulse along a conductive line provided by a control circuitry, accordingly, the magnetoresistive element is pre-configured into a reading mode having canceled spin-transfer torques or a recording mode having additive spin-transfer torques.
摘要翻译：平面STT-MRAM包括装置，一种操作自旋转矩磁阻存储器的方法和具有从MTJ堆叠作用在记录层上的自旋转移转矩和具有自旋阀层的新型磁阻的多个磁阻存储元件。自旋阀层可以通过沿着由控制电路提供的导电线路的设定/复位电流脉冲平行或反平行于固定参考层磁化的两个稳定磁化状态之间是可以可逆的，因此磁阻元件是预先配置成具有取消的自旋转移转矩的读取模式或具有添加的自旋转移转矩的记录模式。

62. 发明申请

US20160260890A1 NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS 审中-公开
标题翻译：新颖的电磁元件
公开(公告)号：US20160260890A1
公开(公告)日：2016-09-08
申请号：US14641380
申请日：2015-03-07
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/08 , H01L43/10 , H01L27/22 , H01L43/02
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： A perpendicular magnetoresistive element comprises a novel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt crystal structure having the (100) plane parallel to the substrate plane and at least a portion of the buffer layer comprises a doped element having conductivity enhancement and the perpendicular resistance of the buffer layer is relatively small than that of the tunnel barrier layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications
摘要翻译：垂直磁阻元件包括设置在记录层表面上的新型缓冲层，其与设置有隧道势垒层的记录层的表面相对，其中至少缓冲层与记录层相接的部分包含具有平行于衬底平面的（100）平面的岩盐晶体结构，并且缓冲层的至少一部分包括具有导电性增强的掺杂元素，并且缓冲层的垂直电阻相对于隧道势垒层的垂直电阻。本发明优选地包括适用于垂直旋转传递转矩MRAM应用的垂直磁阻元件的材料，配置和工艺

63. 发明申请

US20160072054A1 METHOD TO MAKE MRAM WITH SMALL CELL SIZE 审中-公开
标题翻译：制造具有小细胞尺寸的MRAM的方法
公开(公告)号：US20160072054A1
公开(公告)日：2016-03-10
申请号：US14479353
申请日：2014-09-07
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/12 , H01L43/08 , H01L43/10 , H01L43/02
CPC分类号： H01L43/12 , H01L27/228
摘要： A method to make magnetic random access memory with extremely small cell size is provided. Using atomic layer deposition (ALD) technique, a very thin film of hard mask material is uniformly grown on the vertical spatial walls of a pre-form. Stand alone hard mask is formed after removing the pre-form. Array of magnetic memory cells are formed by reactive ion etch (RIE) or ion milling using such small hard mask. This way, the dimension of the hard mask is no longer limited by photolithography tool capability, instead, it is controlled by ALD-grown hard mask film thickness which can be made extremely thin.
摘要翻译：提供了一种制造具有极小单元尺寸的磁随机存取存储器的方法。使用原子层沉积（ALD）技术，将非常薄的硬掩模材料均匀地生长在预成型件的垂直空间壁上。在取下预制件后，形成独立的硬面罩。通过使用这种小的硬掩模的反应离子蚀刻（RIE）或离子研磨形成磁存储单元的阵列。这样，硬掩模的尺寸不再受光刻工具的能力限制，而是由ALD生长的硬掩模膜厚度控制，这可以使其非常薄。

64. 发明申请

US20160064651A1 METHOD TO MAKE THREE-TERMINAL MRAM 审中-公开
标题翻译：制造三端MRAM的方法
公开(公告)号：US20160064651A1
公开(公告)日：2016-03-03
申请号：US14475575
申请日：2014-09-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , H01L43/02
CPC分类号： H01L43/08 , H01L43/12
摘要： This invention is about a method to make three-terminal spin transfer torque transistor magnetic random access memory (ST3-MRAM) cell using plasma based ion implantation. The core memory stack of such ST3-MRAM cell contains a bottom digit line (or VIA), a thick dielectric insulating layer, a memory layer, another thin dielectric layer, and a magnetic reference layer on the top. After the formation of the top magnetic reference pillar by photolithography patterning and etching, the outside region of the magnetic memory layer is converted to a non-magnetic conducting lead by heavy doping of boron ions generated by plasma from boron hydrogen (BxH3x) containing gas.
摘要翻译：本发明是关于使用等离子体离子注入制造三端自旋转移转矩晶体管磁性随机存取存储器（ST3-MRAM）单元的方法。这种ST3-MRAM单元的核心存储器堆栈包含顶部的底部数字线（或VIA），厚介质绝缘层，存储层，另一个薄介电层和磁性参考层。在通过光刻图案和蚀刻形成顶部磁性参考柱之后，通过从含有氢气（BxH 3 x）的气体的等离子体产生的硼离子的重掺杂，将磁存储层的外部区域转换为非磁性导电引线。

65. 发明申请

US20150364676A1 THREE-TERMINAL SPIN TRANSISTOR MAGNETIC RANDOM ACCESS MEMORY AND THE METHOD TO MAKE THE SAME 审中-公开
标题翻译：三端旋转晶体管磁性随机存取存储器及其制作方法
公开(公告)号：US20150364676A1
公开(公告)日：2015-12-17
申请号：US14301335
申请日：2014-06-11
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , H01L43/02
CPC分类号： H01L43/08 , H01L43/12
摘要： This invention is about a three-terminal spin transistor magnetic random access memory and the method to make it with a narrow foot print. The first terminal, a bit line, is connected to the top magnetic reference layer, and the second terminal is located at the middle memory layer which is connected to the underneath CMOS control circuit through VIA and the third one, a digital line, is a voltage gate with a narrow point underneath the memory layer across an insulating layer which is used to reduce the write current when it is turned on. The fabrication includes formation of a large VIA base, formation of digital line, formation of memory cell & VIA connection and formation of the top bit line. Dual photolithography patterning and hard mask etch are used to form the digital line pillar and small memory pillar. Oxygen plasma ion implantation is used to define an insulating region underneath the memory cell and metallic ion implantation is used to convert a buried dielectric VIA base outside the center memory pillar into an electric conductive path between middle memory cell and underneath CMOS device.
摘要翻译：本发明涉及一种三端旋转晶体管磁性随机存取存储器以及使其具有窄脚印的方法。第一端子位线连接到顶部磁性参考层，并且第二端子位于通过VIA连接到下面的CMOS控制电路的中间存储器层，第三端子是数字线路在绝缘层上的存储层下方具有窄点的电压栅极，该绝缘层用于在接通时减小写入电流。该制造包括形成大的VIA基座，数字线的形成，存储器单元的形成和VIA连接以及顶部位线的形成。使用双光刻图案和硬掩模蚀刻来形成数字线柱和小存储柱。使用氧等离子体离子注入来限定存储器单元下方的绝缘区域，并且使用金属离子注入将中心存储器柱外部的掩埋电介质VIA基底转换成中间存储器单元和CMOS器件之下的导电路径。

66. 发明申请

US20150340602A1 METHOD TO FORM SMALL MRAM CELL BY COLLIMATED OXYGEN ION IMPLANTATION 审中-公开
标题翻译：通过阴离子植入植入MRAM细胞的方法
公开(公告)号：US20150340602A1
公开(公告)日：2015-11-26
申请号：US14285637
申请日：2014-05-23
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/12 , H01L43/02 , H01L43/10 , H01L43/08
CPC分类号： H01L43/12 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A method to form a small magnetic random access memory (MRAM) cell using collimated oxygen ion implantation is provided. With a proper control of the bias voltage and collimation angle, oxygen ions are impinged into the magnetic memory layers with a desired energy and bombardment angle, yielding a sharp oxygen boundary around the memory cell. After a high temperature anneal, a dielectric matrix with good metal-oxide bonding is formed within the oxygen implanted memory region and thus forming a small MRAM cell in the mask protected area.
摘要翻译：提供了使用准直氧离子注入形成小型磁性随机存取存储器（MRAM）单元的方法。通过对偏置电压和准直角的适当控制，氧离子以期望的能量和轰击角撞击到磁存储层中，在存储器单元周围产生尖锐的氧边界。在高温退火之后，在氧注入存储区域内形成具有良好金属氧化物键合的介质矩阵，从而在掩模保护区域中形成小的MRAM单元。

67. 发明申请

US20140254252A1 MAGNETORESISTIVE ELEMENT 审中-公开
标题翻译：磁电元件
公开(公告)号：US20140254252A1
公开(公告)日：2014-09-11
申请号：US14200003
申请日：2014-03-06
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： G11C11/16
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
摘要： A STT-MRAM comprises apparatus, and method of operating a double-MTJ magnetoresistive memory and a plurality of magnetoresistive memory element having a first recording layer which has an interface interaction with an underneath dielectric functional layer and having a second recording layer which has no interface interaction with an underneath dielectric functional layer. The energy switch barrier of the first recording layer is reduced under an electric field applying along a perpendicular direction of the functional with a proper voltage on a digital line from a control circuitry; accordingly, the magnetization of the first recording layer is readily reversible in a low spin-transfer switching current while the magnetization of the second recording layer is readily reversible in a high spin-transfer switching current, enabling two separate bits recording in a double MTJ stack.
摘要翻译： STT-MRAM包括装置和操作双MTJ磁阻存储器的方法和具有第一记录层的多个磁阻存储元件，该第一记录层与下介质功能层具有界面相互作用，并具有不具有界面的第二记录层与下面的介电功能层的相互作用。在来自控制电路的数字线路上沿着具有适当电压的功能的垂直方向施加的电场下，第一记录层的能量开关势垒减小; 因此，第一记录层的磁化在低自旋转移切换电流中容易可逆，同时第二记录层的磁化在高自旋转移开关电流中容易可逆，使得能够在双MTJ堆叠中记录两个单独的位。

68. 发明申请

US20140252439A1 MRAM HAVING SPIN HALL EFFECT WRITING AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：具有螺旋桨效应写字板的MRAM及其制作方法
公开(公告)号：US20140252439A1
公开(公告)日：2014-09-11
申请号：US14198589
申请日：2014-03-06
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/04 , H01L43/14
CPC分类号： H01L43/14 , G11C11/1675 , G11C11/18 , H01L27/228 , H01L43/04 , H01L43/08 , H01L43/12
摘要： A spin-transfer-torque magnetoresistive memory comprises apparatus and method of manufacturing a three terminal magnetoresistive memory element having highly conductive bottom electrodes overlaid on top of a SHE-metal layer in the regions outside of an MTJ stack. The memory cell comprises a bit line positioned adjacent to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two highly conductive bottom electrodes overlaid and electrically contacting on top of a SHE-metal layer in the outside of an MTJ region and to supply a bi-directional spin Hall effect recording current, and accordingly to switch the magnetization of the recording layer. Thus magnetization of a recording layer can be readily switched or reversed to the direction in accordance with a direction of a current along the SHE-metal layer by applying a low write current.
摘要翻译：自旋转移 - 转矩磁阻存储器包括制造具有高导电性底部电极的三端子磁阻存储元件的装置和方法，其覆盖在MTJ堆叠外的区域中的SHE-金属层的顶部。存储单元包括位于与多个磁阻存储元件中选定的磁阻存储元件相邻的位线，以在磁阻元件堆叠上提供读取电流，并且两个高度导电的底部电极重叠并电接触外部的SHE-金属层的顶部并提供双向旋转霍尔效应记录电流，并因此切换记录层的磁化。因此，通过施加低写入电流，记录层的磁化可以容易地根据沿着SHE-金属层的电流的方向切换或反向。

69. 发明申请

US20140217526A1 NOVEL PERPENDICULAR MAGNETORESISTIVE ELEMENTS 审中-公开
标题翻译：新颖的电磁元件
公开(公告)号：US20140217526A1
公开(公告)日：2014-08-07
申请号：US14149757
申请日：2014-01-07
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/02
CPC分类号： H01L27/224 , G11C11/02 , G11C11/161 , H01L27/22 , H01L27/222 , H01L43/08 , H01L43/10
摘要： A perpendicular magnetoresistive element comprises anovel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt crystal structure having the (100) plane parallel to the substrate plane and at least a portion of the buffer layer comprises a doped element having conductivity enhancement and the perpendicular resistance of the buffer layer is relatively small than that of the tunnel barrier layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications
摘要翻译：垂直磁阻元件包括设置在记录层的与设置有隧道势垒层的记录层的表面相对的表面上的缓冲层，其中至少与记录层相接的缓冲层的部分包含具有（100）平面平行于衬底平面的岩盐晶体结构，并且缓冲层的至少一部分包括具有导电性增强的掺杂元素，并且缓冲层的垂直电阻相对于隧道势垒层的垂直电阻小。本发明优选地包括适用于垂直旋转传递转矩MRAM应用的垂直磁阻元件的材料，配置和工艺

70. 发明授权

US08514506B1 Disk drive comprising a dual read element and delay circuitry to improve read signal 有权
标题翻译：磁盘驱动器包括双重读取元件和延迟电路，以改善读取信号
公开(公告)号：US08514506B1
公开(公告)日：2013-08-20
申请号：US13371252
申请日：2012-02-10
申请人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
发明人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
IPC分类号： G11B5/09 , G11B20/10
CPC分类号： G11B5/3954 , G11B5/012 , G11B20/10009 , G11B20/10037 , G11B20/10046 , G11B20/10074 , G11B20/10175 , G11B20/10222 , G11B20/10231 , G11B20/10277 , G11B20/10305 , G11B20/10314 , G11B20/10379 , G11B20/1258 , G11B2220/2516
摘要： A disk drive is disclosed comprising a disk having a plurality of data tracks, and a head actuated over the disk, the head comprising a first read element and a second read element. A data track is read to generate a first read signal emanating from the first read element and a second read signal emanating from the second read element. The first read signal is delayed in continuous time relative to the second read signal to generate a delayed read signal, and the second read signal is combined with the delayed read signal to generate a combined read signal. An estimated data sequence is detected from the combined read signal.
摘要翻译：公开了一种磁盘驱动器，其包括具有多个数据磁道的磁盘，以及在盘上驱动的磁头，磁头包括第一读取元件和第二读取元件。读取数据磁道以产生从第一读取元件发出的第一读取信号和从第二读取元件发出的第二读取信号。第一读取信号相对于第二读取信号以连续时间延迟，以产生延迟的读取信号，并且将第二读取信号与延迟的读取信号组合以产生组合的读取信号。从组合的读取信号中检测估计的数据序列。

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