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    • 62. 发明授权
    • Optimized contact design for thermosonic bonding of flip-chip devices
    • 优化的倒装芯片器件热键合接触设计
    • US07667236B2
    • 2010-02-23
    • US10588473
    • 2004-12-22
    • Ivan EliashevichHari VenugopalanXiang GaoMichael J. Sackrison
    • Ivan EliashevichHari VenugopalanXiang GaoMichael J. Sackrison
    • H01L27/15
    • H01L33/382H01L33/20H01L33/62H01L2224/05568H01L2224/05573H01L2224/16H01L2924/00014H01L2924/01079H01L2924/12041H01L2224/05599
    • A light emitting device (A) includes a semiconductor die (100). The semiconductor die includes: an epitaxial structure (120) arranged on a substrate (160), the epitaxial structure forming an active light generating region (140) between a first layer (120n) on a first side of the active region and having a first conductivity type, and a second layer (120p) on a second side of the active region and having a second conductivity type, the second side of the active region being opposite the first side of the active region and the second conductivity type being different that the first conductivity type; a first contact (180n) in operative electrical communication with the active region via the first layer in the epitaxial structure, the first contact being arranged on a side of the epitaxial structure opposite the substrate; a second contact (180p) in operative electrical communication with the active region via the second layer in the epitaxial structure, the second contact being arranged on a side of the epitaxial structure opposite the substrate; a first contact trace corresponding to the first contact and defined at a surface thereof distal from the substrate, the first trace including at least one area designated for bonding (320n); and, a second contact trace corresponding the second contact and defined at a surface thereof distal from the substrate, the second trace including at least one area (320p) designated for bonding. Suitably, the first contact trace is substantially enclosed within the second contact trace.
    • 发光器件(A)包括半导体管芯(100)。 所述半导体管芯包括:布置在衬底(160)上的外延结构(120),所述外延结构在所述有源区的第一侧上的第一层(120n)之间形成有源光产生区(140),并且具有第一 导电类型和在有源区的第二侧上的第二层(120p),并具有第二导电类型,有源区的第二面与有源区的第一侧相反,第二导电类型不同于 第一导电类型; 通过外延结构中的第一层与有源区域电连通的第一接触(180n),第一接触件布置在与衬底相对的外延结构的一侧上; 通过外延结构中的第二层与有源区域电连通的第二触点(180p),第二触点布置在与衬底相对的外延结构的一侧上; 第一接触迹线对应于第一接触并限定在其远离基底的表面,第一迹线包括指定用于接合的至少一个区域(320n); 以及对应于所述第二接触并限定在其远离所述衬底的表面的第二接触迹线,所述第二迹线包括指定用于接合的至少一个区域(320p)。 适当地,第一接触迹线基本上封闭在第二接触迹线内。
    • 63. 发明申请
    • AUTOMATIC DESIGN OF MORPHOLOGICAL ALGORITHMS FOR MACHINE VISION
    • 用于机器视觉的形态学算法的自动设计
    • US20090226100A1
    • 2009-09-10
    • US11744925
    • 2007-05-07
    • Xiang GaoVisvanathan RameshTerrance E. Boult
    • Xiang GaoVisvanathan RameshTerrance E. Boult
    • G06K9/62
    • G06K9/325G06K9/6217
    • The present invention provides a technique for automated selection of a parameterized operator sequence to achieve a pattern classification task. A collection of labeled data patterns is input and statistical descriptions of the inputted labeled data patterns are then derived. Classifier performance for each of a plurality of candidate operator/parameter sequences is determined. The optimal classifier performance among the candidate classifier performances is then identified. Performance metric information, including, for example, the selected operator sequence/parameter combination, will be outputted. The operator sequences selected can be chosen from a default set of operators, or may be a user-defined set. The operator sequences may include any morphological operators, such as, erosion, dilation, closing, opening, close-open, and open-close.
    • 本发明提供一种用于自动选择参数化运算符序列以实现模式分类任务的技术。 输入标记数据模式的集合,然后导出输入的标记数据模式的统计描述。 确定多个候选操作员/参数序列中的每一个的分类器性能。 然后识别候选分类器性能中的最优分类器性能。 将输出包括例如所选择的操作员序列/参数组合的性能度量信息。 选择的操作员序列可以从默认操作符集中选择,或者可以是用户定义的集合。 运算符序列可以包括任何形态学运算符,例如侵蚀,扩张,关闭,打开,闭合和开 - 关。
    • 70. 发明授权
    • Bask demodulator and method for demodulating bask modulated signal
    • 用于解调调制信号的Bask解调器和方法
    • US09093954B2
    • 2015-07-28
    • US13964119
    • 2013-08-12
    • Wanfu YeXiang GaoDongpeng Hou
    • Wanfu YeXiang GaoDongpeng Hou
    • H03D1/08H03D1/10H03D1/18
    • H03D1/08H03D1/10H03D1/18
    • A BASK demodulator includes a signal modifying circuit and a low pass filter (LPF) that couples an amplifier to an output of the modifying circuit. The modifying circuit includes a signal scaling circuit, a rectifying circuit and an AC coupling circuit. A signal shaping circuit couples an output of the amplifier to an output of the demodulator. The signal scaling circuit scales an input BASK modulated signal to provide an unclipped scaled and biased alternating signal that alternates about a bias voltage at a minimum carrier frequency. The rectifying circuit rectifies the unclipped signal to provide a partially rectified signal that is decoupled by the AC coupling circuit to provide a clipped scaled and biased alternating signal. The LPF removes the signal from the clipped scaled and biased alternating signal to provide a demodulated signal, which then is amplified by the amplifier and shaped by the shaping circuit.
    • BASK解调器包括将放大器耦合到修改电路的输出的信号修正电路和低通滤波器(LPF)。 修正电路包括信号缩放电路,整流电路和AC耦合电路。 信号整形电路将放大器的输出耦合到解调器的输出。 信号缩放电路对输入的BASK调制信号进行缩放以提供在最小载波频率上绕偏置电压交替的未切割的定标和偏置交替信号。 整流电路对未剪切信号进行整流,以提供由AC耦合电路解耦的部分整流信号,以提供限幅和偏置的交替信号。 LPF从被裁剪和偏置的交替信号中去除信号以提供解调信号,然后被放大器放大并由整形电路成形。