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61. 发明申请

US20060211228A1 A METHOD FOR FORMING A RUTHENIUM METAL LAYER ON A PATTERNED SUBSTRATE 有权
标题翻译：在形成基底的金属层上形成金属层的方法
公开(公告)号：US20060211228A1
公开(公告)日：2006-09-21
申请号：US10907022
申请日：2005-03-16
申请人： Tsukasa Matsuda
发明人： Tsukasa Matsuda
IPC分类号： H01L21/28 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/4481 , C23C16/45542 , C23C16/52 , H01L21/28562 , H01L21/76846 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A method for forming a ruthenium metal layer includes providing a patterned substrate in a process chamber of a deposition system, where the patterned substrate contains one or more vias or trenches, or combinations thereof, depositing a first ruthenium metal layer on the substrate in an atomic layer deposition process, and depositing a second ruthenium metal layer on the first ruthenium metal layer in a thermal chemical vapor deposition process. The deposited ruthenium metal layer can be used as a diffusion barrier layer, a seed layer for electroplating, or both.
摘要翻译：一种用于形成钌金属层的方法包括在沉积系统的处理室中提供图案化衬底，其中图案化衬底包含一个或多个通孔或沟槽，或其组合，在衬底上以原子形式沉积第一钌金属层层沉积工艺，以及在热化学气相沉积工艺中在第一钌金属层上沉积第二钌金属层。沉积的钌金属层可以用作扩散阻挡层，用于电镀的种子层或两者。

62. 发明申请

US20060124151A1 Method for cleaning substrate processing chamber 失效
标题翻译：清洗基板处理室的方法
公开(公告)号：US20060124151A1
公开(公告)日：2006-06-15
申请号：US10536322
申请日：2003-11-14
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Koumei Matsuzawa , Tsukasa Matsuda , Yumiko Kawano
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Koumei Matsuzawa , Tsukasa Matsuda , Yumiko Kawano
IPC分类号： B08B6/00
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/32862
摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.
摘要翻译：一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

63. 发明申请

US20050244593A1 Recording paper and image recording method thereof 失效
标题翻译：记录纸及其图像记录方法
公开(公告)号：US20050244593A1
公开(公告)日：2005-11-03
申请号：US11020268
申请日：2004-12-27
申请人： Chizuru Koga , Kiyoshi Hosoi , Takashi Ogino , Tsukasa Matsuda
发明人： Chizuru Koga , Kiyoshi Hosoi , Takashi Ogino , Tsukasa Matsuda
IPC分类号： B41J2/01 , B41M5/00 , B41M5/40 , B41M5/50 , B41M5/52 , G03G7/00
CPC分类号： B41M5/52 , B41M5/5218 , B41M5/5236 , B41M5/5245 , G03G7/0013 , G03G7/002 , G03G7/0026 , G03G7/004 , G03G7/0046 , Y10T428/24802
摘要： The present invention provides a recording paper comprising pulp fibers and filler as main components and containing at least a cationic substance and a water-soluble polymer in a surface of the recording paper, wherein conductivity of water is not less than 0.002 S/m as measured at 1 second after immersing a piece of the recording paper with an area of 0.05 m2 in 40 ml of pure water.
摘要翻译：本发明提供一种记录纸，其包含纸浆纤维和填料作为主要成分，并且在记录纸的表面中至少含有阳离子物质和水溶性聚合物，其中水的电导率不小于0.002S / m 在一片面积为0.05m 2的记录纸在40ml纯水中浸渍1秒钟。

64. 发明申请

US20050221000A1 Method of forming a metal layer 审中-公开
标题翻译：形成金属层的方法
公开(公告)号：US20050221000A1
公开(公告)日：2005-10-06
申请号：US10813680
申请日：2004-03-31
申请人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Taro Ikeda , Tsukasa Matsuda , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/02 , C23C16/16 , C23C16/509 , B05D3/00 , C23C16/00 , H05H1/24
CPC分类号： C23C16/5096 , C23C16/02 , C23C16/16
摘要： A method and a processing tool are provided for forming a metal layer with improved morphology on a substrate. The method includes pre-treating the substrate by exposing the substrate to excited species in a plasma, exposing the pre-treated substrate to a process gas containing a metal-carbonyl precursor, and forming a metal layer on the pre-treated substrate surface by a chemical vapor deposition process. The metal-carbonyl precursor can contain W(CO)6, Ni(CO)4, Mo(CO)6, CO2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, or Ru3(CO)12 or any combination thereof, and the metal layer can contain W, Ni, Mo, Co, Rh, Re, Cr, or Ru, or any combination thereof, respectively.
摘要翻译：提供了一种用于在衬底上形成具有改善的形态的金属层的方法和加工工具。该方法包括通过将衬底暴露于等离子体中的激发物质来预处理衬底，将预处理的衬底暴露于含有羰基金属前体的工艺气体中，以及在预处理的衬底表面上形成金属层化学气相沉积工艺。金属羰基前体可以含有W（CO）6，Ni（CO）4，Mo（CO）6，CO， 2（CO）8，Rh 4（CO）12，Re 2（CO） Cr（CO）6或Ru 3（CO）12 12或其任何组合，和金属层可以分别含有W，Ni，Mo，Co，Rh，Re，Cr或Ru，或其任何组合。

65. 发明授权

US06577836B2 Image-forming apparatus and fixing unit with heat circulator for high heat exchange efficiency 失效
标题翻译：具有热循环器的图像形成装置和定影单元，具有高的热交换效率
公开(公告)号：US06577836B2
公开(公告)日：2003-06-10
申请号：US09951606
申请日：2001-09-14
申请人： Takayuki Yamashita , Tsukasa Matsuda , Tetsuo Yamada
发明人： Takayuki Yamashita , Tsukasa Matsuda , Tetsuo Yamada
IPC分类号： G03G1516
CPC分类号： G03G15/161 , F28D15/0275 , G03G2215/0119 , G03G2215/1695
摘要： An image-forming apparatus, a fixing unit and a heat circulation system are equipped with a heat circulator capable of being fabricated at low costs and ensuring high heat exchange efficiency. The heat circulator includes two tabular metal members that come into contact with an intermediate transfer member at positions upstream and downstream of a simultaneous transfer and fixing zone, and plural heat pipes that transfer the heat of the first metal member to the second metal member.
摘要翻译：图像形成装置，定影单元和热循环系统配备有能够以低成本制造并确保高热交换效率的热循环器。热循环器包括在同时传送和固定区域的上游和下游位置处与中间转印构件接触的两个平板状金属构件，以及将第一金属构件的热量传递到第二金属构件的多个热管。

66. 发明授权

US5541002A Ink jet printing paper 失效
标题翻译：喷墨打印纸
公开(公告)号：US5541002A
公开(公告)日：1996-07-30
申请号：US322329
申请日：1994-10-13
申请人： Kiyoshi Hosoi , Tsukasa Matsuda
发明人： Kiyoshi Hosoi , Tsukasa Matsuda
IPC分类号： B41M5/00 , B41M5/50 , B41M5/52 , D21H19/20 , D21H19/40 , D21H19/60 , D21H19/84 , D21H27/14 , G01N29/07 , G01N33/34 , B32B29/00 , G03G7/00
CPC分类号： B41M5/52 , D21H27/14 , G01N29/07 , G01N33/346 , B41M5/5218 , B41M5/5254 , B41M5/529 , D21H19/20 , D21H19/40 , D21H19/60 , D21H19/84 , G01N2291/0237 , G01N2291/0421 , G01N2291/102 , G01N2291/103 , Y10S428/913 , Y10T428/259 , Y10T428/26 , Y10T428/27 , Y10T428/31663 , Y10T428/31902 , Y10T428/31993
摘要： A printing paper comprises a paper substrate and a coating layer formed on at least one side of the substrate and formed from a coating composition comprising a white pigment and a water-soluble resin in an amount of from 4 to 10 g/m.sup.2. When the paper sheet is divided or split into a printing surface layer and a non-printing surface layer, a difference in shrinking rate along a cross direction between the printing surface layer and the non-printing surface layer is within a range of .+-.0.1%. The paper can suppress curling on printing.
摘要翻译：打印纸包括纸基材和形成在基材的至少一侧上的涂层，由包含白色颜料和水溶性树脂的涂料组合物形成，其量为4至10g / m 2。当纸张被分割或分成印刷表面层和非印刷表面层时，印刷表面层和非印刷表面层之间沿着横向的收缩率差异在+/- 0.1％。纸张可以抑制打印时的卷曲。

67. 发明授权

US4874089A Light-tight cassette 失效
标题翻译：不透光盒
公开(公告)号：US4874089A
公开(公告)日：1989-10-17
申请号：US266846
申请日：1988-11-03
申请人： Tsukasa Matsuda , Kazuo Ui , Hiroshi Maeda
发明人： Tsukasa Matsuda , Kazuo Ui , Hiroshi Maeda
IPC分类号： G03C3/00 , G03B27/58
CPC分类号： G03B27/588 , G03B2217/265
摘要： In a light-tight cassette for a roll of light-sensitive strip material comprising a body having a slot for extending the light-sensitive strip material and end panels closing both end openings of the body and supporting said roll, the improvement which comprises at least one of the end panels having a rotary core to which the core of the roll is fixed, a bearing means which rotatably supports the rotary core and a fixing means to fix the rotary core to the end panel releasably.In the light-tight cassette of the invention, since the core of the light-sensitive strip material is fixed to an end panel through the rotary core by the fixing means, loosening of the roll of the light-sensitive strip material does not occur by the shaking during transportation or the like. Therefore, the problems in quality such as the degradation of surface quality do not occur. Since the fixation is readily released by pulling the light-sensitive strip material, it may easily be extended at the time of use.
摘要翻译：在用于一卷感光带材的不透光盒中，包括具有用于延伸感光条材料的槽的主体和封闭主体的两个端部开口并支撑所述辊的端板，该改进至少包括所述端板中的一个具有固定所述辊的芯的旋转芯，可旋转地支撑所述旋转芯的轴承装置和用于将所述旋转芯可释放地固定到所述端面板的固定装置。在本发明的不透光盒中，由于感光条材料的芯通过固定装置通过旋转芯固定到端板上，因此光敏材料卷的松动不会由运输过程中的晃动等。因此，不会发生质量问题，例如表面质量下降。由于通过拉动感光带状材料容易地释放固定，所以在使用时可以容易地延长。

68. 发明申请

US20160155816A1 Semiconductor Device and Fabricating Method Thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160155816A1
公开(公告)日：2016-06-02
申请号：US15001499
申请日：2016-01-20
申请人： Shigenobu Maeda , Tsukasa Matsuda , Hidenobu Fukutome
发明人： Shigenobu Maeda , Tsukasa Matsuda , Hidenobu Fukutome
IPC分类号： H01L29/66 , H01L29/78 , H01L29/165 , H01L29/08 , H01L29/161 , H01L29/16
CPC分类号： H01L29/665 , H01L29/0847 , H01L29/1608 , H01L29/161 , H01L29/165 , H01L29/41791 , H01L29/66545 , H01L29/66795 , H01L29/7848 , H01L29/785
摘要： A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect the first fm, a first elevated source/drain on the first fin on both sides of the first gate electrode, and a first metal alloy layer on an upper surface and sidewall of the first elevated source/drain.
摘要翻译：提供半导体器件。所述半导体器件包括：衬底上的第一鳍片，形成在所述衬底上以与所述第一fm相交的第一栅极电极，所述第一栅电极两侧的所述第一鳍片上的第一升高源极/漏极，以及第一金属合金层在第一升高的源极/漏极的上表面和侧壁上。

69. 发明授权

US08163087B2 Plasma enhanced atomic layer deposition system and method 有权
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US08163087B2
公开(公告)日：2012-04-24
申请号：US11094461
申请日：2005-03-31
申请人： Jacques Faguet , Frank M. Cerio, Jr. , Tsukasa Matsuda , Kaoru Yamamoto
发明人： Jacques Faguet , Frank M. Cerio, Jr. , Tsukasa Matsuda , Kaoru Yamamoto
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4409 , C23C16/45542 , C23C16/5096 , H01J37/32477
摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
摘要翻译：等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应在基板上形成预定的膜。还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的膜沉积在基底上。

70. 发明授权

US08026176B2 Film forming method, plasma film forming apparatus and storage medium 有权
标题翻译：成膜方法，等离子体成膜装置和存储介质
公开(公告)号：US08026176B2
公开(公告)日：2011-09-27
申请号：US12223781
申请日：2007-02-09
申请人： Takashi Sakuma , Taro Ikeda , Osamu Yokoyama , Tsukasa Matsuda , Tatsuo Hatano , Yasushi Mizusawa
发明人： Takashi Sakuma , Taro Ikeda , Osamu Yokoyama , Tsukasa Matsuda , Tatsuo Hatano , Yasushi Mizusawa
IPC分类号： H01L21/311
CPC分类号： C23C14/046 , H01J37/321 , H01J37/34 , H01L21/2855 , H01L21/76846 , H01L21/76877 , H01L21/76882 , H01L21/76883
摘要： A technique for embedding metal in a microscopic recess provided in the surface of a process object, such as a semiconductor wafer, by plasma sputtering. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of metal film in the recess. The diffusion step moves the deposited metal film towards the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer is set to a value ensuring that, on the surface of the wafer, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess.
摘要翻译：通过等离子体溅射将金属嵌入设置在处理对象（例如半导体晶片）的表面中的微观凹槽中的技术。交替进行成膜步骤和扩散步骤。成膜步骤在凹槽中沉积少量的金属膜。扩散步骤将沉积的金属膜移向凹部的底部。在成膜步骤中，施加到用于支撑晶片的载物台的偏置功率被设定为确保在晶片的表面上由于金属颗粒的吸入引起的金属沉积速率基本相等的值到等离子体的溅射蚀刻速率。在扩散步骤中，晶片保持在允许沉积在凹槽中的金属膜的表面扩散出现的温度。

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