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    • 63. 发明授权
    • Process for production of polyamideimide resin microparticles, and polyamideimide resin microparticles
    • 聚酰胺酰亚胺树脂微粒的生产方法和聚酰胺酰亚胺树脂微粒
    • US09193836B2
    • 2015-11-24
    • US13508200
    • 2010-10-06
    • Hiroaki AkasakaTakae OnoToshiya Takahashi
    • Hiroaki AkasakaTakae OnoToshiya Takahashi
    • C08G73/14C08J3/14
    • C08J3/14C08G73/14C08J2379/08Y10T428/2982
    • A process for producing fine particles of polyamide-imide resin includes a dissolution step and a precipitation step wherein the dissolution step is selected from steps (a1) and (b1); (a1) polyamide-imide resin is dissolved in an organic solvent to prepare a polyamide-imide resin solution A1 having a polyamide-imide resin content of less than 5 mass %; and (b1) polyamide-imide resin is dissolved in an organic solvent to prepare a polyamide-imide resin solution B1 having a polyamide-imide resin content of less than 10 mass %, and the precipitation step is selected from (a2) the polyamide-imide resin solution A1 is added to a solvent that is virtually free from surface active agents and able to precipitate fine particles of the polyamide-imide resin to cause precipitation of fine particles of the polyamide-imide resin, and (b2) the polyamide-imide resin solution B1 is subjected to flash crystallization to cause precipitation of fine particles of the polyamide-imide resin.
    • 制备聚酰胺酰亚胺树脂微粒的方法包括溶解步骤和沉淀步骤,其中溶解步骤选自步骤(a1)和(b1); (a1)聚酰胺酰亚胺树脂溶解在有机溶剂中,制备聚酰胺 - 酰亚胺树脂含量小于5质量%的聚酰胺 - 酰亚胺树脂溶液A1; 和(b1)聚酰胺酰亚胺树脂溶解在有机溶剂中,制备聚酰胺 - 酰亚胺树脂含量小于10质量%的聚酰胺 - 酰亚胺树脂溶液B1,沉淀步骤选自(a2)聚酰胺 - 将酰亚胺树脂溶液A1加入到基本上不含表面活性剂的溶剂中,并能够使聚酰胺 - 酰亚胺树脂的细颗粒沉淀,使聚酰胺 - 酰亚胺树脂的细颗粒沉淀,和(b2)聚酰胺 - 酰亚胺 树脂溶液B1进行闪光结晶,使聚酰胺 - 酰亚胺树脂的微粒析出。
    • 64. 发明授权
    • Method of producing gas barrier film
    • 阻气膜的制造方法
    • US08236388B2
    • 2012-08-07
    • US12553476
    • 2009-09-03
    • Tatsuya FujinamiToshiya Takahashi
    • Tatsuya FujinamiToshiya Takahashi
    • H05H1/24
    • C23C16/509C23C16/345H01J37/32091H01J37/32706
    • A method of producing a gas barrier film comprises the steps of: supplying a material gas including silane gas, ammonia gas and at least one of nitrogen gas and hydrogen gas to a process chamber; keeping the process chamber at an internal pressure of 20 to 200 Pa; holding a substrate in the process chamber at a substrate temperature of not more than 70° C.; forming a bias potential of −100 V or less at the substrate; and supplying power P (W) to the material gas so as to have a ratio P/Q of the power P to a silane gas flow rate Q (sccm) of 15 to 30 W/sccm to generate plasma, thereby depositing a silicon nitride layer on a surface of the substrate.
    • 制造阻气膜的方法包括以下步骤:向处理室供给包括硅烷气体,氨气和至少一种氮气和氢气的原料气体; 将处理室保持在20〜200Pa的内压; 在不超过70℃的基板温度下将基板保持在处理室中; 在衬底上形成-100V或更小的偏置电位; 并向原料气体供给功率P(W),使得功率P的比值P / Q为硅烷气体流量Q(sccm)为15〜30W / sccm,以产生等离子体,由此沉积氮化硅 层在基板的表面上。