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    • 61. 发明申请
    • METHOD OF MANUFACTURING NONVOLATILE STORAGE DEVICE
    • 制造非易失存储器件的方法
    • US20100261330A1
    • 2010-10-14
    • US12554319
    • 2009-09-04
    • Hiroyuki NanseiToshiharu TanakaHirokazu Kikuchi
    • Hiroyuki NanseiToshiharu TanakaHirokazu Kikuchi
    • H01L21/3205
    • H01L21/32139H01L27/0207H01L27/24
    • A method of manufacturing a nonvolatile storage device having memory cell arrays according to an embodiment of the present invention includes forming, in a memory cell array forming region above a processed film, first columnar members arrayed at substantially equal intervals in the first direction and the second direction, forming, concerning at least arrays as a part of arrays of the first columnar members in the first direction, second columnar members long in section having major axes longer than sections of the first columnar members outside of the memory cell array forming region such that the major axes are set in the first direction and the second columnar members continue to ends of the arrays, and forming, in the same manner as above, third columnar members, which continue to arrays of the first columnar members in the second direction.
    • 根据本发明实施例的制造具有存储单元阵列的非易失性存储装置的方法包括在处理膜上方的存储单元阵列形成区域中形成在第一方向上以基本等间隔排列的第一柱状构件, 方向,形成,至少阵列作为第一方向上的第一柱状构件的阵列的一部分,第二柱状构件的长截面具有长于存储单元阵列形成区域外的第一柱状构件的部分的长轴,使得 长轴被设置在第一方向上,第二柱状构件继续到阵列的端部,并且以与上述相同的方式形成在第二方向上继续排列第一柱状构件的第三柱状构件。
    • 62. 发明授权
    • Method of manufacturing nonvolatile memory device
    • 制造非易失性存储器件的方法
    • US07799702B1
    • 2010-09-21
    • US12560011
    • 2009-09-15
    • Toshiharu Tanaka
    • Toshiharu Tanaka
    • H01L21/31
    • H01L27/24
    • A method of manufacturing a nonvolatile memory device according to an embodiment of the present invention comprises: forming a metal film containing metal whose oxide functions as a variable resistive material and which reacts with silicon through heat treatment and forms metal silicide, on an interlayer insulating film having a silicon layer, which is patterned in a predetermined shape and connected to a first wire, with the surface thereof exposed, performing heat treatment to form a silicide layer on the surface of the silicon layer, oxidizing the silicide layer to form a variable resistive layer on an upper part of the silicon layer, and forming a second wire coupled to the variable resistive layer.
    • 根据本发明实施例的制造非易失性存储器件的方法包括:在层间绝缘膜上形成含有氧化物作为可变电阻材料并通过热处理与硅反应并形成金属硅化物的金属的金属膜 具有硅层,其图案化为预定形状并连接到第一导线,其表面暴露,进行热处理以在硅层的表面上形成硅化物层,氧化硅化物层以形成可变电阻 层,并且形成耦合到可变电阻层的第二线。
    • 64. 发明授权
    • Black ink composition, ink set containing the same, and ink jet recording method
    • 黑色油墨组合物,含有该油墨组合物的油墨组合物,以及喷墨记录方法
    • US07520928B2
    • 2009-04-21
    • US11632653
    • 2005-07-12
    • Kenji IkedaToshiharu Tanaka
    • Kenji IkedaToshiharu Tanaka
    • C09D11/00C09D11/02B41J2/01
    • C09D11/328C09D11/40
    • Black ink compositions are provided. First embodiment contains a water-soluble long-wavelength dye L and a water-soluble short-wavelength dye S, in which the water-soluble short-wavelength dye S has 3 or more azo groups per molecule and a naphthalene skeleton. Second embodiment contains a water-soluble short-wavelength dye S whose absorption spectrum in aqueous solvent has a maximum between 440 nm and 540 nm and a half-band width of 90 to 200 nm and a water-soluble long-wavelength dye L whose absorption spectrum in aqueous solvent has a maximum between 550 nm and 700 nm and a half-band width of 100 nm or more. Third embodiment contains water, a water-miscible organic solvent, and a coloring material, in which C. I. Direct Red 84 is contained as a water-soluble short-wavelength dye S.
    • 提供黑色油墨组合物。 第一实施方案包含水溶性长波长染料L和水溶性短波长染料S,其中水溶性短波长染料S每分子具有3个或更多个偶氮基和萘骨架。 第二实施方案包含水溶性短波长染料S,其在水性溶剂中的吸收光谱的最大值在440nm至540nm之间,半带宽度为90至200nm,并且其水溶性长波长染料L的吸收 水溶剂中的光谱在550nm和700nm之间具有最大值,并且半带宽度为100nm以上。 第三实施方案包含水,水混溶性有机溶剂和着色材料,其中包含C.I.直接红84作为水溶性短波长染料S.