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    • 66. 发明授权
    • Solid-state imaging device and electronic equipment
    • 固态成像装置和电子设备
    • US08754968B2
    • 2014-06-17
    • US13089539
    • 2011-04-19
    • Kyoko IzuhaKouichi Harada
    • Kyoko IzuhaKouichi Harada
    • H04N9/083
    • H01L31/02162H01L27/14625H04N5/2254H04N5/35563H04N9/045H04N2209/045
    • A solid-state imaging device includes: a semiconductor substrate having a light receiving surface sectioned for red, green, blue, and white pixels arranged in a matrix with photodiodes formed thereon; color filters formed on the semiconductor substrate in light incident paths to the photodiodes of the respective formation regions of the red, green, and blue pixels and respectively transmitting lights in red, green, and blue wavelength regions; and photochromic films formed on the semiconductor substrate in the light incident path to the photodiodes in the formation regions of at least some of the white pixels, and containing a photochromic material having light transmittance varying in response to incident light intensity in a predetermined wavelength region, wherein a half period of the light transmittance of the photochromic films is shorter than one frame as a period in which pixel signals obtained in the pixels are read out with respect to all pixels.
    • 固态成像装置包括:半导体衬底,其具有以形成在其上的光电二极管以矩阵排列的红色,绿色,蓝色和白色像素的受光面; 形成在半导体衬底上的彩色滤光器,分别以红色,绿色和蓝色像素的各个形成区域的光电二极管的光入射路径分别形成在红色,绿色和蓝色波长区域中的光; 以及在至少一些白色像素的形成区域中的光入射路径中的光入射路径中形成的光致变色膜,并且含有具有根据预定波长区域中的入射光强度而变化的光透射率的光致变色材料, 其中光致变色膜的透光率的一半周期短于一帧,作为相对于所有像素读出像素中获得的像素信号的周期。