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    • 65. 发明授权
    • Method of producing thin film bulk acoustic resonator
    • 制造薄膜体声波谐振器的方法
    • US07140084B2
    • 2006-11-28
    • US10995447
    • 2004-11-23
    • Tetsuo YamadaKeigo NagaoChisen Hashimoto
    • Tetsuo YamadaKeigo NagaoChisen Hashimoto
    • H04R17/00H05K3/10B24B1/00
    • H03H9/173B06B1/0644G10K11/04H03H3/02H03H9/02094H03H9/02102H03H9/02149H03H9/174H03H9/562H03H9/564H03H9/585H03H9/587H03H2003/021H03H2003/0428Y10S977/888Y10T29/42Y10T29/49155
    • A method of producing a thin film bulk acoustic resonator having a piezoelectric layer, a first electrode joined to a first surface of the piezoelectric layer, and a second electrode joined to a second surface of the piezoelectric layer, which is located at the opposite side to the first surface, including the steps of forming a pit on a surface of a substrate; filling the pit with a sacrificial layer; polishing a surface of the sacrificial layer so that the RMS variation of a height of the surface of the sacrificial layer is equal to 25 nm or less; forming the first electrode over a partial area of the surface of the sacrificial layer and a partial area of the surface of the substrate; forming the piezoelectric layer on the first electrode so that RMS variation of a height of the second surface of the piezoelectric layer is equal to 5% or less of a thickness of the piezoelectric layer; forming the second electrode on the piezoelectric layer; and removing the sacrificial layer from the inside of the pit by etching.
    • 一种制造具有压电层的薄膜体声波谐振器的方法,连接到压电层的第一表面的第一电极和连接到压电层的第二表面的第二电极,该第二电极位于与压电层相对的一侧 所述第一表面包括在基板的表面上形成凹坑的步骤; 用牺牲层填充坑; 抛光牺牲层的表面,使得牺牲层的表面的高度的RMS变化等于25nm或更小; 在所述牺牲层的表面的部分区域和所述衬底的表面的部分区域上形成所述第一电极; 在第一电极上形成压电层,使得压电层的第二表面的高度的RMS变化等于压电层的厚度的5%以下; 在压电层上形成第二电极; 并通过蚀刻从凹坑的内部去除牺牲层。
    • 68. 发明授权
    • Subsystem of producing dye base body used for dyeing of spectacle lenses and a spectacle lens dyeing system including the dye base body producing subsystem
    • 用于制造用于眼镜片染色的染料基体的子系统和包括染料基体产生子系统的眼镜透镜染色系统
    • US07014314B1
    • 2006-03-21
    • US09579062
    • 2000-05-26
    • Kenichi KamataMinoru InuzukaTetsuo Yamada
    • Kenichi KamataMinoru InuzukaTetsuo Yamada
    • G02C7/02
    • G02C13/003D06P5/004
    • A subsystem for producing a dye base body used for dyeing a spectacle lens is disclosed. This subsystem includes a camera which photographs the face of a customer, a color memory which stores a plurality of color data, a color selection device for selecting a desired color data from among the plurality of color data stored in the color memory, a display controller for controlling a display to display an image of the customer's face photographed by the camera and coloring a lens area of a displayed spectacle frame image in accordance with the selected color data, a printer for printing using sublimatable dye contained therein, and a print controller for controlling the printer to print a predetermined shape with the dye on a printing base body in accordance with the selected color data to produce the dye base body.
    • 公开了一种用于制造用于染色眼镜镜片的染料基体的子系统。 该子系统包括拍摄顾客面部的相机,存储多个彩色数据的彩色存储器,用于从存储在彩色存储器中的多个彩色数据中选择所需颜色数据的颜色选择装置,显示控制器 用于控制显示器以显示由相机拍摄的客户脸部的图像,并根据所选择的颜色数据着色所显示的眼镜框图像的镜片区域;打印机,其使用包含在其中的可升华染料进行打印;以及打印控制器, 控制打印机根据所选择的颜色数据在印刷基体上用染料印刷预定的形状以产生染料基体。
    • 69. 发明申请
    • THIN FILM PIEZOELECTRIC RESONATOR, THIN FILM PIEZOELECTRIC DEVICE, AND MANUFACTURING METHOD THEREOF
    • 薄膜压电谐振器,薄膜压电器件及其制造方法
    • US20050248238A1
    • 2005-11-10
    • US10518704
    • 2003-06-20
    • Tetsuo YamadaKosuke NishimuraKeigo Nagao
    • Tetsuo YamadaKosuke NishimuraKeigo Nagao
    • H01L41/22H01L41/29H03H3/02H03H9/02H03H9/56H03H9/58H01L41/047
    • H03H9/562H03H3/02H03H9/02094H03H9/02102H03H9/02157H03H9/564H03H9/568H03H9/585H03H9/588
    • A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1/D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.
    • 一种薄膜压电装置,包括具有通孔(22)的基板(12)和由下电极(15),压电膜(16)和上电极(17)构成的压电层叠结构(14) 所述基板(12)经由绝缘层(13)。 为通孔(22)形成多个薄膜压电谐振器(210,220)。 压电层叠结构(14)包括面对通孔(22)的位置和除了这些之外的支撑区域的隔膜(23)。 薄膜压电谐振器(210,220)通过下电极(15)电连接。 当穿过薄膜压电谐振器(210,220)的隔膜(23)的中心(1,2)的基板平面中的直线具有穿过支撑区域的段的长度D 1和距离 在薄膜压电谐振器(210,220)的膜片的中心之间的距离为D 0,比率D 1 / D 0为0.1至0.5。 通孔(22)通过深刻型反应离子蚀刻法制造。
    • 70. 发明授权
    • Film bulk acoustic resonator
    • 薄膜体声共振器
    • US06936837B2
    • 2005-08-30
    • US10477308
    • 2002-05-10
    • Tetsuo YamadaKeigo NagaoChisen HashimotoMorito AkiyamaNaohiro UenoHiroshi Tateyama
    • Tetsuo YamadaKeigo NagaoChisen HashimotoMorito AkiyamaNaohiro UenoHiroshi Tateyama
    • H03H9/02H03H9/56H03H9/58H01L47/00
    • H03H9/174H03H9/02094H03H9/562H03H9/564H03H9/585H03H9/588Y10S438/90
    • A thin film bulk acoustic resonator comprises a substrate (12) of a silicon single crystal, a base film (13) formed on the substrate (12) and composed of a dielectric film mainly containing silicon oxide, and a piezoelectric stacked structure (14) formed on the base film (13). A vibratory section (21) composed of a part of the base film (13) and a part of the piezoelectric stacked structure (14). The piezoelectric stacked structure (14) includes a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed in this order from below. The substrate (12) had a via hole (20) in the region corresponding to the vibratory section (21). The via hole forms a space for allowing vibration of the vibratory section (21). The piezoelectric film (16) is an aluminum nitride thin film containing 0.2 to 3.0 atom % of alkaline earth metal and/or a rare earth metal. Thus, the thin film bulk acoustic resonator has a high performance such as a large electromechanical coupling coefficient, an excellent acoustic quality factor (Q) and an excellent frequency-temperature characteristic.
    • 薄膜体声波谐振器包括硅单晶的衬底(12),形成在衬底(12)上并由主要包含氧化硅的电介质膜构成的基膜(13)和压电堆叠结构(14) 形成在基膜(13)上。 由所述基膜(13)的一部分和所述压电堆叠结构(14)的一部分构成的振动部(21)。 压电堆叠结构(14)包括下部电极(15),压电膜(16)和从下方依次形成的上部电极(17)。 基板(12)在对应于振动部分(21)的区域中具有通孔(20)。 通孔形成用于允许振动部分(21)振动的空间。 压电膜(16)是含有0.2〜3.0原子%的碱土金属和/或稀土金属的氮化铝薄膜。 因此,薄膜体声波谐振器具有高的机电耦合系数,良好的声学质量因子(Q)和优异的频率 - 温度特性等性能。