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61. 发明授权

US5476709A Polymeric insulating material and formed article making use of the material 失效
标题翻译：聚合绝缘材料和使用该材料的成型制品
公开(公告)号：US5476709A
公开(公告)日：1995-12-19
申请号：US73676
申请日：1993-06-08
申请人： Takeo Inoue , Shigeru Kimura , Tutomu Iwatani , Takayuki Yamada , Yukio Ishii , Ryuichi Sugimoto
发明人： Takeo Inoue , Shigeru Kimura , Tutomu Iwatani , Takayuki Yamada , Yukio Ishii , Ryuichi Sugimoto
IPC分类号： C08L23/12 , H01B3/44 , B32B7/02
CPC分类号： C08L23/10 , C08L23/12 , H01B3/441 , C08L51/06 , C08L83/04 , C08L83/12 , Y10S428/91 , Y10T428/24975 , Y10T428/25
摘要： The invention provides a polymeric insulating material having a high dielectric breakdown voltage. The material comprises polypropylene which has been obtained in a yield of at least 300,000 g/g-Ti based on titanium in a catalyst upon polymerization, contains ash in an amount not greater than 40 ppm by weight when analyzed by completely burning the polypropylene in air, said ash containing titanium in an amount not greater than 1 ppm by weight based on the weight of the polypropylene, and also contains chlorine in an amount not greater than 2 ppm by weight and boiling n-heptane soluble matter in an amount not smaller than 1 wt. % but not greater than 10 wt. %. According to the invention, it is possible to further improve the dielectric breakdown voltage by adding to the polypropylene an inorganic oxide or hydroxide free of particles of 10 .mu.m and greater in diameter and having an average particle size not greater than 1 .mu.m, an organopolysilane, a maleic-anhydride-grafted polypropylene, or a silane compound containing at least one organic polyether group.
摘要翻译：本发明提供了具有高绝缘击穿电压的聚合物绝缘材料。该材料包括在聚合时以催化剂中钛为基准的至少300,000g / g-Ti的产率获得的聚丙烯，当通过在空气中完全燃烧聚丙烯进行分析时，含有不大于40ppm重量的灰分所述灰分含量以聚丙烯重量计不超过1重量ppm，并且还含有不大于2重量ppm的氯和沸点正庚烷可溶物质量不小于 1重量％％但不大于10wt。％。根据本发明，通过向聚丙烯中添加不含直径10μm以上的平均粒径为1μm以下的无机氧化物或氢氧化物，可以进一步提高介电击穿电压，有机聚硅烷，马来酸酐接枝的聚丙烯或含有至少一个有机聚醚基团的硅烷化合物。

62. 发明授权

US5462886A Method of manufacturing a semiconductor element 失效
标题翻译：制造半导体元件的方法
公开(公告)号：US5462886A
公开(公告)日：1995-10-31
申请号：US157259
申请日：1993-11-26
申请人： Yoshihiko Sakai , Takayuki Yamada
发明人： Yoshihiko Sakai , Takayuki Yamada
IPC分类号： H01L21/3105 , H01L21/312 , H01L21/326 , H01L21/336 , H01L21/56 , H01L23/29 , H01L23/31 , H01L29/786 , H01L31/20 , H01L21/765
CPC分类号： H01L29/66765 , H01L21/3105 , H01L21/312 , H01L31/202 , Y02E10/50 , Y02P70/521 , Y10S148/045
摘要： A method of manufacturing a semiconductor element such as a thin film transistor or a photo diode, in which a voltage is applied to an organic insulating layer in the direction vertical to a substrate during a coating process of polyimide constituting the interlayer insulating layer formed over a semiconductor layer, a prebaking process for initial hardening which immediately follows the coating process, and a postbaking process after the pattern formation of the interlayer insulating layer.
摘要翻译：一种制造薄膜晶体管或光电二极管的半导体元件的方法，其中在构成形成在层间绝缘层上的聚酰亚胺的涂覆工艺期间，在垂直于基板的方向上向有机绝缘层施加电压半导体层，刚刚涂覆工艺的初始硬化的预烘烤工艺，以及在层间绝缘层的图案形成之后的后烘烤工艺。

63. 发明授权

US5132157A Stretched films of polyproplene 失效
标题翻译：聚丙烯薄膜
公开(公告)号：US5132157A
公开(公告)日：1992-07-21
申请号：US525726
申请日：1990-05-21
申请人： Tadashi Asanuma , Kazuhiko Yamamoto , Tateyo Sasaki , Takeo Inoue , Takayuki Yamada
发明人： Tadashi Asanuma , Kazuhiko Yamamoto , Tateyo Sasaki , Takeo Inoue , Takayuki Yamada
IPC分类号： B29C55/02 , B29C55/00 , B29C59/02 , B29K23/00 , B29L7/00 , C08J5/18
CPC分类号： C08J5/18 , B29C55/005 , B29C59/022 , B29K2023/12 , B29K2995/0026 , B29K2995/0072 , C08J2323/10 , Y10S428/91 , Y10T156/1002 , Y10T156/1023 , Y10T428/24355 , Y10T428/24479 , Y10T428/26 , Y10T428/269 , Y10T428/31 , Y10T428/31938
摘要： A stretched film of polypropylene which is excellent in transparency, substantially free of an antiblocking agent and at least uniaxially stretched and which is characterized in that it has uniformly distributed projections having a height ranging from 0.05 to 0.50 .mu. and a width ranging from 10 to 100 .mu. at least on the surface thereof as well as a method for preparing the foregoing stretched film of polypropylene which comprises the steps of forming, into a sheet, polypropylene which comprises a nucleating agent in an amount selected so that the crystallization temperature of polypropylene is increased by 1.degree.to 10.degree. C. by the addition thereof and then stretching the sheet at a temperature ranging from 140.degree. to 165.degree. C. are herein disclosed.

64. 发明授权

US5081189A Propylene-ethylene copolymer composition and process for producing the same 失效
标题翻译：丙烯 - 乙烯共聚物组合物及其制造方法
公开(公告)号：US5081189A
公开(公告)日：1992-01-14
申请号：US408488
申请日：1989-08-11
申请人： Takayuki Yamada , Takashi Kanbayashi , Shigeru Kimura , Takeo Inoue
发明人： Takayuki Yamada , Takashi Kanbayashi , Shigeru Kimura , Takeo Inoue
IPC分类号： C08F2/00 , C08F210/16 , C08F297/08 , C08J5/18 , C08L23/06 , C08L23/08 , C08L23/14 , C08L23/16 , H01G4/22
CPC分类号： H01G4/22 , C08F297/083 , C08L23/142 , C08L23/06 , C08L23/0815
摘要： Provided herein is a propylene-ethylene copolymer composition which comprises (a) 10 to 25 parts by weight of a first propylene-ethylene copolymer containing 90 wt % or more of ethylene and (b) 75 to 90 parts by weight of a second propylene-ethylene copolymer containing 0.5 to 2.5 wt % of ethylene, the first copolymer having intrinsic viscosity of .eta..sub.a and the second copolymer having an intrinsic viscosity of .eta..sub.b, said intrinsic viscosities being defined by .eta..sub.a -.eta..sub.b =-0.2 to +1.2 dl/g.
摘要翻译： PCT No.PCT / JP88 / 01155 Sec。 371日期1989年8月11日 102（e）日期1989年8月11日PCT提交1988年11月15日PCT公布。出版物WO90 / 05764 日本1990年5月31日。在此提供的是丙烯 - 乙烯共聚物组合物，其包含（a）10至25重量份的含有90重量％或更多的乙烯的第一丙烯 - 乙烯共聚物和（b）75至90重量份的含有0.5至2.5重量％乙烯的第二丙烯 - 乙烯共聚物的重量，第一共聚物具有ηa的特性粘度，第二共聚物具有η的特性粘度，所述特性粘度由等式b = -0.2至+1.2dl / g。

65. 发明授权

US09136893B2 Receiver 有权
标题翻译：接收器
公开(公告)号：US09136893B2
公开(公告)日：2015-09-15
申请号：US13520268
申请日：2011-01-12
申请人： Takana Kaho , Yo Yamaguchi , Hiroyuki Shiba , Doohwan Lee , Takayuki Yamada , Kazunori Akabane , Kazuhiro Uehara
发明人： Takana Kaho , Yo Yamaguchi , Hiroyuki Shiba , Doohwan Lee , Takayuki Yamada , Kazunori Akabane , Kazuhiro Uehara
IPC分类号： H04B1/16 , H04B1/30 , H04B1/00
CPC分类号： H04B1/30 , H04B1/0057
摘要： A receiver includes a local signal generator, a power phase adjuster, and a frequency converter so as to perform frequency conversion on signals included in a plurality of radio frequency bands. The local signal generator supplies a plurality of local signals. The power phase adjuster adjusts local signals in terms of signal power or relative phases. The frequency converter performs frequency conversion on radio frequency bands by use of local signals adjusted with the power phase adjuster, thus sorting them in a desired frequency range.
摘要翻译：接收机包括本地信号发生器，电力相位调节器和频率转换器，以对包括在多个无线电频带中的信号执行频率转换。本地信号发生器提供多个本地信号。功率相位调节器根据信号功率或相对相位调整本地信号。变频器通过使用通过电力相位调节器调整的本地信号在射频上执行频率转换，从而将它们分组到期望的频率范围。

66. 发明授权

US08889408B2 Factor taking part in transcription control 有权
标题翻译：参与转录控制的因子
公开(公告)号：US08889408B2
公开(公告)日：2014-11-18
申请号：US13296878
申请日：2011-11-15
申请人： Shuki Mizutani , Takayuki Yamada
发明人： Shuki Mizutani , Takayuki Yamada
IPC分类号： C12N15/85 , C12N15/11 , C07K14/47
CPC分类号： C07K14/4702
摘要： HDART binds with HDAC (histone deacetylase) and functions as a repressor. HDART directly binds with Skip, which functions as a transcription co-activator of nuclear receptors, to repress the transcription by the nuclear receptor. Moreover, HDART is a transcription co-repressor of nuclear receptors, and binds with HDAC wherein transcription can be strongly repressed through the histone deacetylization of HDAC. On the other hand, a dominant negative peptide of HDART can be obtained, and it has been confirmed that, in contrast with the full-length HDART protein, this peptide activates transcription. In particular, the ability of this peptide to activate transcription by the retinoic acid receptor exceeds that of all-trans retinoic acid (ATRA).
摘要翻译： HDART与HDAC结合（组蛋白脱乙酰酶），起到阻遏物的作用。 HDART与作为核受体的转录共激活子的Skip直接结合，以抑制核受体的转录。此外，HDART是核受体的转录共抑制因子，并与HDAC结合，其中可以通过HDAC的组蛋白脱乙酰化强烈抑制转录。另一方面，可以获得HDART的显性负性肽，并且已经证实，与全长HDART蛋白质相反，该肽激活转录。特别地，该肽激活视黄酸受体转录的能力超过全反式视黄酸（ATRA）的能力。

67. 发明申请

US20130284260A1 Back Electrode Type Solar Cell, Back Electrode Type Solar Cell With Interconnection Sheet, Solar Cell Module, Method of Manufacturing Back Electrode Type Solar Cell With Interconnection Sheet, and Method of Manufacturing Solar Cell Module 有权
标题翻译：背电极型太阳能电池，背电极型太阳能电池与互连片，太阳能电池模块，背面电极型太阳能电池制造方法及其制造方法太阳能电池模块
公开(公告)号：US20130284260A1
公开(公告)日：2013-10-31
申请号：US13990134
申请日：2011-11-29
申请人： Shinsuke Naito , Yasushi Sainoo , Tomohiro Nishina , Kohjiroh Morii , Tomoyo Shiraki , Akiko Tsunemi , Takayuki Yamada , Masatomo Tanahashi , Koji Fukuda
发明人： Shinsuke Naito , Yasushi Sainoo , Tomohiro Nishina , Kohjiroh Morii , Tomoyo Shiraki , Akiko Tsunemi , Takayuki Yamada , Masatomo Tanahashi , Koji Fukuda
IPC分类号： H01L31/02 , H01L31/18
CPC分类号： H01L31/02013 , H01L31/022441 , H01L31/048 , H01L31/0516 , H01L31/18 , Y02E10/50
摘要： A back electrode type solar cell in which a no-electrode-formed region where no electrode is placed is provided in a part of a peripheral portion of a back surface of the back electrode type solar cell such that a line connecting end portions of a plurality of electrodes to one another includes a partially inwardly recessed region and the no-electrode-formed region is located adjacent to each of an electrode for n-type and an electrode for p-type adjacent to each other, a solar cell module, a method of manufacturing a back electrode type solar cell with interconnection sheet, and a method of manufacturing a solar cell module are provided.
摘要翻译：在背面电极型太阳能电池的背面的周边部分的一部分设置有其中没有放置电极的无电极形成区域的背面电极型太阳能电池，使得连接多个的电极彼此包括部分向内凹陷的区域，并且无电极形成区域位于与n型电极和p型电极彼此相邻的每一个附近，太阳能电池模块，方法制造具有互连片的背面电极型太阳能电池和制造太阳能电池模块的方法。

68. 发明授权

US08558321B2 Semiconductor device having gate insulating film including high dielectric material 有权
标题翻译：具有包括高电介质材料的栅极绝缘膜的半导体器件
公开(公告)号：US08558321B2
公开(公告)日：2013-10-15
申请号：US13005085
申请日：2011-01-12
申请人： Hiroji Shimizu , Yoshihiro Sato , Hideyuki Arai , Takayuki Yamada , Tsutomu Oosuka
发明人： Hiroji Shimizu , Yoshihiro Sato , Hideyuki Arai , Takayuki Yamada , Tsutomu Oosuka
IPC分类号： H01L21/40
CPC分类号： H01L27/0629 , H01L28/20
摘要： A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.
摘要翻译：一种半导体器件包括：第一导电类型的第一MIS晶体管，具有作为由半导体衬底的上部形成的元件隔离区围绕的半导体衬底的区域的第一有源区，第一栅绝缘膜，形成在第一有源区上的高电介质膜和形成在第一栅极绝缘膜上的第一栅电极; 以及电阻元件，其具有形成在元件隔离区域上的第二高电介质膜和形成在第二高介电膜上的由硅制成的电阻层。第一高介电膜和第二高电介质膜包括相同的高介电材料，第一高电介质膜包括第一调节金属，但第二高电介质膜不包括第一调节金属。

69. 发明授权

US08418719B2 Microchannel device 有权
标题翻译：微通道设备
公开(公告)号：US08418719B2
公开(公告)日：2013-04-16
申请号：US11783394
申请日：2007-04-09
申请人： Kazuaki Tabata , Takayuki Yamada , Masaki Hirota
发明人： Kazuaki Tabata , Takayuki Yamada , Masaki Hirota
IPC分类号： F17D1/14 , F16L41/00 , B01F5/06
CPC分类号： B01F13/0067 , B01F13/0066 , B01J19/0093 , B01J2219/00783 , B01J2219/00788 , B01J2219/00822 , B01J2219/00831 , B01J2219/00833 , B01J2219/0086 , B01J2219/00889 , C09B67/0019 , Y10T137/0329 , Y10T137/85938 , Y10T137/87281 , Y10T137/87652 , Y10T137/877
摘要： A microchannel device includes; a microchannel that forms two or more different fluids as a multiphase flow, and a section shape of the multiphase flow having in at least one portion a first shape in which plural polygons are two-dimensionally arranged, and adjacent to one another, a second shape in which a polygon is inscribed in one of a circle and an ellipse, or circumscribes one of a circle and an ellipse, or a third shape in which at least plural circles and polygons are two-dimensionally arranged, and adjacent to one another.
摘要翻译：微通道装置包括：形成两个或更多个不同流体作为多相流的微通道，以及多相流的截面形状，其在至少一部分中具有第一形状，其中多个多边形彼此二维排列并且彼此相邻，第二形状其中将多边形内接在一个圆形和椭圆形中的一个中，或者外接圆形和椭圆形中的一种，或者其中至少多个圆形和多边形被二维排列并且彼此相邻的第三形状。

70. 发明授权

US08395219B2 Semiconductor device and fabrication method for the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08395219B2
公开(公告)日：2013-03-12
申请号：US13167362
申请日：2011-06-23
申请人： Riichirou Mitsuhashi , Takayuki Yamada
发明人： Riichirou Mitsuhashi , Takayuki Yamada
IPC分类号： H01L21/70
CPC分类号： H01L21/82345 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insulating film. The second transistor includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode formed on the second gate insulating film. The first gate insulating film includes a first insulating material with a first element diffused therein, the second gate insulating film includes the first insulating material, and the amount of the first element contained in the first gate insulating film is greater than the amount of the first element contained in the second gate insulating film.
摘要翻译：半导体器件包括形成在半导体衬底中的第一晶体管和第二晶体管。第一晶体管包括：形成在半导体衬底上的第一栅极绝缘膜; 以及形成在第一栅极绝缘膜上的第一栅电极。第二晶体管包括：形成在半导体衬底上的第二栅极绝缘膜; 以及形成在第二栅极绝缘膜上的第二栅电极。所述第一栅极绝缘膜包括第一绝缘材料，其中扩散有第一元素，所述第二栅极绝缘膜包括所述第一绝缘材料，并且所述第一栅极绝缘膜中包含的所述第一元素的量大于所述第一绝缘膜的量元件包含在第二栅极绝缘膜中。

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