会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 67. 发明授权
    • Projection optical system and projection display device using the same
    • 投影光学系统和投影显示装置使用相同
    • US08029147B2
    • 2011-10-04
    • US12467411
    • 2009-05-18
    • Takashi Suzuki
    • Takashi Suzuki
    • G03B21/22
    • G02B13/0095G02B17/0856
    • A projection optical system having a magnification side and a reduction side for forming a magnified image on a magnification side image surface conjugate with a reduction side conjugate image surface includes, arranged in order from the reduction side, a first imaging system including a plurality of lens elements and lens components and a second imaging system including a mirror having a concave, aspheric reflecting surface. An intermediate image is formed between the first imaging system and the second imaging system. The projection optical system satisfies specified conditions related to the travel of principal rays through the projection optical system and related to the Abbe number of a lens element having positive refractive power of the first imaging system. A projection display device includes the projection optical system and may include a light valve for modulating a light beam for projection on a screen.
    • 具有用于在与还原侧共轭图像表面共轭的倍率侧图像上形成放大图像的放大倍率和还原侧的投影光学系统包括从还原侧依次配置第一成像系统,该第一成像系统包括多个透镜 元件和透镜部件以及包括具有凹入非球面反射表面的反射镜的第二成像系统。 在第一成像系统和第二成像系统之间形成中间图像。 投影光学系统满足与通过投影光学系统的主光线的行进相关的特定条件,并且与具有第一成像系统的正屈光力的透镜元件的阿贝数相关。 投影显示装置包括投影光学系统,并且可以包括用于调制用于投影在屏幕上的光束的光阀。
    • 69. 发明授权
    • Plasma processing apparatus and electrode used therein
    • 其中使用的等离子体处理装置和电极
    • US08008596B2
    • 2011-08-30
    • US11686500
    • 2007-03-15
    • Akira KoshiishiTakashi Suzuki
    • Akira KoshiishiTakashi Suzuki
    • B23K10/00
    • H01J37/32532H01J37/32009
    • A plasma processing apparatus performs a specific plasma processing on a target substrate by disposing a first and a second electrode to face each other in a processing chamber, and supplying high-frequency electric power to at least one of the first and the second electrodes to thereby generate a plasma while introducing a processing gas onto the target substrate supported by the second electrode. The electrode for use as the first electrode includes: an electrode plate facing the second electrode; a support for supporting the electrode plate, wherein the support is in contact with a surface of the electrode plate and the surface is opposite to the second electrode; and a dielectric portion, provided on a contact surface of the support with the electrode plate, and having a shape in which a center portion thereof has a height different from that of an edge portion thereof.
    • 等离子体处理装置通过在处理室内配置第一电极和第二电极而彼此面对,对目标基板进行特定的等离子体处理,并向第一和第二电极中的至少一个提供高频电力,从而 产生等离子体,同时将处理气体引入到由第二电极支撑的目标衬底上。 用作第一电极的电极包括:面对第二电极的电极板; 用于支撑所述电极板的支撑件,其中所述支撑件与所述电极板的表面接触,并且所述表面与所述第二电极相对; 以及电介质部,其设置在所述支撑体的与所述电极板的接触面上,并且具有其中心部的高度与其边缘部的高度不同的形状。