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    • 61. 发明授权
    • Real-time semiconductor radiation detector
    • 实时半导体辐射探测器
    • US5757040A
    • 1998-05-26
    • US667453
    • 1996-06-21
    • Yutaka SaitoYoshikazu Kojima
    • Yutaka SaitoYoshikazu Kojima
    • H01L27/14H01L27/146H01L31/10H01L31/00
    • H01L27/14658H01L27/14643H01L27/14681
    • Semiconductor radial rays detector is provided that improves a breakdown voltage yield of a gate insulating film of a semiconductor radial rays detector and prevents an increase in resistance of a gate electrode caused by the improvement in the breakdown voltage yield. In the inventive semiconductor radial rays detector, material used as a gate electrode 1 of a reading condenser is not an Al film (aluminum film) but a POLY Si film (a polycrystalline silicon film), or silicide or metal including silicide with a high melting point such as WSi (tungsten silicide) (strictly its composition is indefinite as expressed as W.sub.x Si.sub.y) or TiSi (titan silicide) (expressed as Ti.sub.x Si, in the same manner). Further, a contact hole 2 is provided on the gate electrode 1 through an inter-insulating film 4 as the inter-insulating film for wiring, and an Al electrode 3 coupled to an output terminal is provided over the contact
    • 提供半导体径向射线检测器,其提高半导体径向射线检测器的栅极绝缘膜的击穿电压产生,并且防止由于击穿电压产量的提高而引起的栅电极的电阻增加。 在本发明的半导体径向射线检测器中,用作读取冷凝器的栅电极1的材料不是Al膜(铝膜),而是POLY Si膜(多晶硅膜),或者包含高熔点的硅化物的硅化物或金属 (硅化钨)(严格地说,其组成如WxSiy所表示的不定)或TiSi(钛硅化物)(以相同的方式表示为TixSi)。 此外,通过作为布线用绝缘膜的绝缘膜4在栅电极1上设置接触孔2,并且在触点上设置耦合到输出端子的Al电极3
    • 66. 发明授权
    • Laser beam control apparatus
    • 激光束控制装置
    • US5268914A
    • 1993-12-07
    • US892772
    • 1992-06-03
    • Mikio YamamuroYutaka Saito
    • Mikio YamamuroYutaka Saito
    • G11B7/125H01S5/042H01S5/0683H01S3/13
    • G11B7/126H01S5/06832
    • The laser beam control apparatus according to the invention having a photodiode for outputting a current consisting of high and low-frequency components in accordance with the amount of a laser beam emitted from a laser diode. The current output from the photodiode is separated into high and low-frequency components by a CR filter, and the separated low-frequency current is amplified by an amplifier. The current amplified by this amplifier is added to the high-frequency current separated by the CR filter. The resulting sum current is converted into a voltage by an amplifier, and the amount of the laser beam emitted from the laser diode is controlled in accordance with the voltage converted by this amplifier. With this operation, the laser beam output power of the laser diode can be stably controlled in a wide band.
    • 根据本发明的激光束控制装置具有光电二极管,用于根据从激光二极管发射的激光束的量输出由高频和低频分量组成的电流。 来自光电二极管的电流输出由CR滤波器分离成高频和低频分量,分离的低频电流由放大器放大。 由该放大器放大的电流被添加到由CR滤波器分离的高频电流。 所得到的和电流由放大器转换为电压,并且根据由该放大器转换的电压来控制从激光二极管发射的激光束的量。 通过这种操作,可以在宽带内稳定地控制激光二极管的激光束输出功率。