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    • 61. 发明授权
    • Deposition apparatus and method
    • 沉积装置和方法
    • US09194044B2
    • 2015-11-24
    • US13029402
    • 2011-02-17
    • Kunihiko SuzukiShinichi Mitani
    • Kunihiko SuzukiShinichi Mitani
    • C23C16/00C23C16/455
    • C23C16/4557
    • A deposition apparatus 50 includes a chamber 1 having at its top section a gas inlet 4 for supplying deposition gas 25. Inside chamber 1 is a susceptor 7 on which to place a substrate 6; a heater 8 located below the substrate 6; and a liner 2 for covering the inner walls of the chamber 1. Apparatus 50 deposits a film on the substrate 6 by supplying deposition gas 25 from gas inlet 4 into chamber 1 while heating substrate 6. An upper electric resistance heater cluster 35 is located between the inner walls of the chamber 1 and liner 2 such that the upper heater 35 surrounds the liner 2. The upper heater 35 is divided vertically into electric resistance heaters 36, 37, and 38 which are independently temperature-controlled. The substrate 6 is heated with the use of both heater 8 and the upper heater cluster 35.
    • 沉积设备50包括在其顶部具有用于供应沉积气体25的气体入口4的腔室1.腔室1内是放置衬底6的基座7; 位于基板6下方的加热器8; 以及用于覆盖室1的内壁的衬垫2.装置50通过在加热衬底6的同时将气体入口4的沉积气体25供应到室1中而将衬底6沉积在衬底6上。上电阻加热器组35位于 腔室1和衬套2的内壁,使得上部加热器35围绕衬垫2.上部加热器35被垂直分割成独立温度控制的电阻加热器36,37和38。 使用加热器8和上加热器簇35来加热基板6。
    • 63. 发明申请
    • PARTICULATE MATTER PROCESSING APPARATUS
    • 颗粒物加工设备
    • US20140007650A1
    • 2014-01-09
    • US13519021
    • 2011-03-16
    • Shinichi MitaniHiroshi NomuraEiji Murase
    • Shinichi MitaniHiroshi NomuraEiji Murase
    • G01N27/04
    • G01N27/04B03C3/0175B03C3/41B03C3/68B03C2201/24B03C2201/30F01N11/00F01N11/007F01N2560/05F01N2560/12F01N2900/1606G01N15/0606Y02T10/47
    • An amount of aggregation of particulate matter is estimated with a high degree of accuracy. A particulate matter processing apparatus in which a processing part with an electrode installed therein is arranged in an exhaust passage of an internal combustion engine, wherein particulate matter is caused to aggregate by generating a potential difference between the electrode and the processing part, is provided with a power supply that is connected to the electrode and applies a voltage thereto, a current detection device that detects an electric current which passes through the electrode, an estimation device that estimates an amount of aggregation of the particulate matter based on the electric current detected at the time when the voltage is applied to the electrode, an air fuel ratio detection device that detects or estimates an air fuel ratio of an exhaust gas which flows through the exhaust passage, and a prohibition device which prohibits an estimation by the estimation device in the case of a rich air fuel ratio.
    • 以高精度估计颗粒物质的聚集量。 在其中安装有电极的处理部件的颗粒物处理装置设置在内燃机的排气通道中,其中通过在电极和处理部件之间产生电位差而使颗粒物质聚集, 与电极连接并对其施加电压的电源,检测通过电极的电流的电流检测装置,基于在电极上检测到的电流来估计颗粒物的聚集量的估计装置, 对电极施加电压的时间,检测或估计通过排气通路的排气的空燃比的空燃比检测装置,以及禁止在估计装置中进行的估计的禁止装置 超大空燃比的情况。
    • 69. 发明申请
    • MANUFACTURING APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE
    • 制造设备和半导体器件的方法
    • US20110092075A1
    • 2011-04-21
    • US12903384
    • 2010-10-13
    • Kunihiko SuzukiShinichi Mitani
    • Kunihiko SuzukiShinichi Mitani
    • H01L21/46
    • H01L21/02639C23C16/4584C23C16/4586C30B25/10H01L21/67109H01L21/68792
    • A semiconductor device manufacturing apparatus includes a chamber in which a wafer is loaded; a first gas supply unit for supplying a process gas into the chamber; a gas exhaust unit for exhausting a gas from the chamber; a wafer support member on which the wafer is placed; a ring on which the wafer support member is placed; a rotation drive control unit connected to the ring to rotate the wafer; a heater disposed in the ring and comprising a heater element for heating the wafer to a predetermined temperature and including an SiC layer on at least a surface, and a heater electrode portion molded integrally with a heater element and including an SiC layer on at least a surface; and a second gas supply unit for supplying an SiC source gas into the ring.
    • 半导体器件制造装置包括其中装载晶片的腔室; 用于将处理气体供应到所述室中的第一气体供应单元; 用于从所述室排出气体的排气单元; 其上放置晶片的晶片支撑构件; 其上放置有晶片支撑构件的环; 旋转驱动控制单元,连接到所述环以旋转晶片; 设置在所述环中并且包括用于将晶片加热到预定温度并且在至少一个表面上包括SiC层的加热器元件的加热器和与加热器元件整体模制并且包括至少一个SiC层的SiC层的加热器电极部分 表面; 以及用于将SiC源气体供给到所述环中的第二气体供给单元。