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61. 发明申请

US20130285092A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20130285092A1
公开(公告)日：2013-10-31
申请号：US13689736
申请日：2012-11-29
申请人： TSINGHUA UNIVERSITY , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： YANG WEI , SHOU-SHAN FAN
IPC分类号： H01L33/46
CPC分类号： H01L33/105 , B82Y20/00 , B82Y99/00 , H01L33/02 , H01L33/06 , H01L33/10 , H01L33/405 , H01L33/46 , H01L33/60 , Y10S977/734
摘要： A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, a second electrode, and a reflection layer. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the substrate in sequence. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located on at least one of the first semiconductor layer and the second semiconductor layer. The reflection layer covers the second semiconductor layer.
摘要翻译：发光二极管包括基板，石墨烯层，第一半导体层，有源层，第二半导体层，第一电极，第二电极和反射层。第一半导体层，有源层和第二半导体层依次层叠在基板上。第一电极与第二半导体层电连接，第二电极与碳纳米管层的第二部分电连接。石墨烯层位于第一半导体层和第二半导体层中的至少一个上。反射层覆盖第二半导体层。

62. 发明申请

US20130260502A1 METHOD FOR MAKING LIGHT EMITTING DIODE 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US20130260502A1
公开(公告)日：2013-10-03
申请号：US13729268
申请日：2012-12-28
申请人： TSINGHUA UNIVERSITY , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： YANG WEI , SHOU-SHAN FAN
IPC分类号： H01L33/00
CPC分类号： H01L33/0062 , B82Y20/00 , B82Y40/00 , H01L33/007 , H01L33/0079
摘要： A method for making a light emitting diode includes the following steps. A substrate having a first epitaxial growth surface is provided. A carbon nanotube layer is placed on the first epitaxial growth surface of the substrate. A surface of the first semiconductor layer is exposed by removing the substrate and the carbon nanotube layer. The surface of the first semiconductor layer is defined as a second epitaxial growth surface. An active layer and a second semiconductor layer are grown on the second epitaxial growth surface in that order. A surface of the active layer contacted the first semiconductor layer engages with the second epitaxial growth surface. A part of the first semiconductor layer is exposed by etching a part of the active layer and the second semiconductor layer. A first electrode is applied on the first semiconductor layer and a second electrode is applied on the second semiconductor layer.
摘要翻译：制造发光二极管的方法包括以下步骤。提供具有第一外延生长表面的衬底。将碳纳米管层置于衬底的第一外延生长表面上。通过去除衬底和碳纳米管层来暴露第一半导体层的表面。第一半导体层的表面被定义为第二外延生长表面。在第二外延生长表面上依次生长活性层和第二半导体层。接触第一半导体层的有源层的表面与第二外延生长表面接合。通过蚀刻有源层和第二半导体层的一部分来暴露第一半导体层的一部分。第一电极施加在第一半导体层上，第二电极施加在第二半导体层上。

63. 发明申请

US20130260487A1 METHOD FOR MAKING LIGHT EMITTING DIODE 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US20130260487A1
公开(公告)日：2013-10-03
申请号：US13902958
申请日：2013-05-27
申请人： HON HAI PRECISION INDUSTRY CO., LTD. , TSINGHUA UNIVERSITY
发明人： YANG WEI , SHOU-SHAN FAN
IPC分类号： H01L33/36 , H01L33/64
CPC分类号： H01L33/0062 , B82Y10/00 , B82Y40/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/20 , H01L33/36 , H01L33/64 , H01L33/641 , H01L51/0048 , H01L2924/0002 , Y10S977/742 , H01L2924/00
摘要： A method for making light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is suspended above the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order, wherein the first semiconductor layer includes a buffer layer, an intrinsic semiconductor layer, and a doped semiconductor layer stacked in that order. Fourth, the doped semiconductor layer is exposed by removing the substrate, the buffer layer, and the intrinsic semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer.
摘要翻译：一种制造发光二极管的方法，该方法包括以下步骤。首先，提供具有外延生长面的基板。第二，碳纳米管层悬浮在外延生长表面上方。第三，第一半导体层，有源层和第二半导体层以该顺序生长在外延生长表面上，其中第一半导体层包括缓冲层，本征半导体层和以该顺序堆叠的掺杂半导体层。第四，通过去除衬底，缓冲层和本征半导体层来暴露掺杂半导体层。第五，在第一半导体层上制备第一电极，在第二半导体层上制备第二电极。

64. 发明公开

US20240114597A1 GRAPHENE HEATING CHIP AND METHOD FOR MAKING THE SAME 审中-公开
公开(公告)号：US20240114597A1
公开(公告)日：2024-04-04
申请号：US18129012
申请日：2023-03-30
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： LIANG LIANG , JIE ZHAO , YANG WEI , QUN-QING LI , SHOU-SHAN FAN
IPC分类号： H05B3/14 , H05B3/03
CPC分类号： H05B3/145 , H05B3/03 , H05B2203/017
摘要： A graphene heating chip includes a substrate, an insulating layer, a graphene film, and a plurality of electrodes. The substrate has two opposite a first surface and a second surface, and the substrate defines a through hole. The insulating layer is suspended on the substrate. The insulating layer covering the through hole and not in direct contact with the first surface is defined as a window, and a plurality of grooves are formed on the window. The graphene film covers the window, and the graphene film includes a first graphene film portion and a second graphene film portion, and the first graphene film portion and the second graphene film portion are spaced apart from each other. The plurality of electrodes are located on the surface of the insulating layer away from the substrate. The present application also provides a method for making the graphene heating chip.

65. 发明申请

US20230027446A1 CARBON NANOTUBE COMPOSITE STRUCTURE 有权
公开(公告)号：US20230027446A1
公开(公告)日：2023-01-26
申请号：US17505822
申请日：2021-10-20
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： GAO-TIAN LU , YANG WEI , SHOU-SHAN FAN , YUE-GANG ZHANG
IPC分类号： H01L51/00 , C01B32/168
摘要： A carbon nanotube composite structure includes a carbon nanotube and a film-like structure. The carbon nanotube includes a p-type portion and an n-type portion. The film-like structure is a molybdenum disulfide film or a tungsten disulfide film, and the film-like structure covers the n-type portion.

66. 发明申请

US20210143301A1 LIGHT EMITTING DIODE 有权
公开(公告)号：US20210143301A1
公开(公告)日：2021-05-13
申请号：US16903164
申请日：2020-06-16
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： JIN ZHANG , YANG WEI , SHOU-SHAN FAN
IPC分类号： H01L33/42 , H01L33/00 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/26 , H01L33/60
摘要： The present disclosure relates to a light emitting diode. The light emitting diode comprises a first semiconductor layer, a second semiconductor layer, an active layer, a first electrode, and a second electrode. The active layer is located between the first semiconductor layer and the second semiconductor layer. The first electrode is a first carbon nanotube, the second electrode is a second carbon nanotube. A first extending direction of the first carbon nanotube and a second extending direction of the second carbon nanotube are crossed with each other. A vertical p-n junction or a vertical p-i-n junction is formed by the first semiconductor layer and the second semiconductor layer in a direction perpendicular to the first semiconductor layer.

67. 发明申请

US20200141062A1 METHOD FOR TRANSFERRING CARBON NANOTUBE ARRAY 审中-公开
公开(公告)号：US20200141062A1
公开(公告)日：2020-05-07
申请号：US16387158
申请日：2019-04-17
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： GUANG WANG , YANG WEI , SHOU-SHAN FAN
IPC分类号： D21H13/50 , B82Y30/00 , B82Y40/00
摘要： A transfer method for carbon nanotube array is provided. A carbon nanotube array is located on a first substrate. A pressure is applied to the carbon nanotube array to form a carbon nanotube paper. A second substrate with a bonding layer is placed on the carbon nanotube paper, and the bonding layer is located between the second substrate and the carbon nanotube array. The second substrate is peeled off, and the carbon nanotubes of the carbon nanotube paper vertically aligned and form the carbon nanotube array under forces of the first substrate and the second substrate. The carbon nanotubes of the carbon nanotube array are substantially perpendicular to the surface of the second substrate.

68. 发明申请

US20200025626A1 PLANE SOURCE BLACKBODY 审中-公开
公开(公告)号：US20200025626A1
公开(公告)日：2020-01-23
申请号：US16244488
申请日：2019-01-10
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： YANG WEI , Guang Wang , SHOU-SHAN FAN
IPC分类号： G01J5/52
摘要： The present invention relates to a surface source blackbody. The plane source blackbody comprises a panel, and a plurality of carbon nanotubes. The panel comprises a first surface and a second surface opposite to the first surface. A carbon nanotube array is located on the first surface of the panel. The carbon nanotube array comprises a plurality of carbon nanotubes. The plurality of carbon nanotubes are substantially perpendicular to the first surface of the panel. The carbon nanotube array has a high emissivity, so the plane source blackbody using the carbon nanotube array as a surface material has a high effective emissivity.

69. 发明申请

US20200025624A1 BLACKBODY RADIATION SOURCE 审中-公开
公开(公告)号：US20200025624A1
公开(公告)日：2020-01-23
申请号：US16244474
申请日：2019-01-10
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： YANG WEI , Guang Wang , SHOU-SHAN FAN
IPC分类号： G01J5/52
摘要： The present invention relates to a blackbody radiation source. The blackbody radiation source comprises a blackbody radiation cavity, a black lacquer layer and a plurality of carbon nanotubes. The blackbody radiation cavity comprises an inner surface. The black lacquer layer and the plurality of carbon nanotubes are located on the inner surface. Each carbon nanotube comprises a top end and a bottom end. The bottom end of each carbon nanotube is immersed into the black lacquer layer, and the top end of each carbon nanotube is exposed out from the black lacquer layer. An extending direction of each carbon nanotubes is substantially perpendicular to the inner surface.

70. 发明申请

US20200025621A1 PLANE SOURCE BLACKBODY 审中-公开
公开(公告)号：US20200025621A1
公开(公告)日：2020-01-23
申请号：US16244449
申请日：2019-01-10
申请人： Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
发明人： YANG WEI , Guang Wang , SHOU-SHAN FAN
IPC分类号： G01J5/52
摘要： The present invention relates to a plane source blackbody. The plane source blackbody comprises a panel, a black lacquer layer, and a carbon nanotube array. The panel comprises a first surface and a second surface opposite to the first surface. The black lacquer layer and the carbon nanotube array are located on the first surface. The carbon nanotube array comprises a plurality of carbon nanotubes. Each of the carbon nanotubes comprises a top end and a bottom end. The bottom end of each of the carbon nanotubes is immersed into the black lacquer layer and the top end of each of the carbon nanotubes is exposed out from the black lacquer layer. The plurality of carbon nanotubes are substantially perpendicular to the first surface of the pane.

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