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61. 发明授权

US08212364B2 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance 有权
标题翻译：半导体装置的制造方法以及半导体装置及电器
公开(公告)号：US08212364B2
公开(公告)日：2012-07-03
申请号：US11440116
申请日：2006-05-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02667 , C30B13/24 , C30B29/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2223/54473 , H01L2224/1134 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83102 , H01L2224/83192 , H01L2224/92125 , H01L2224/92247 , H01L2225/06524 , H01L2225/06555 , H01L2225/1023 , H01L2225/1058 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/15331 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2224/13099 , H01L2924/00 , H01L2924/3512
摘要： The present invention is directed to a semiconductor device having: an interposer; a wiring provided on the interposer; a first chip having a first semiconductor device, a first pad and a first solder ball over the interposer, the first semiconductor device being connected to the first pad and the first pad being connected to the first solder ball; a second chip having a second semiconductor device, a second pad and a second solder ball over the first chip, the second semiconductor device being connected to the second pad and the second pad being connected to the second solder ball; and a terminal provided at a rear side of the interposer, where the wiring and the first chip are connected via the first solder ball, where the first chip and the second chip are connected via the second solder ball, and where the terminal is connected to the first semiconductor device.
摘要翻译：本发明涉及一种具有：插入件的半导体器件; 布置在插入器上的布线; 第一芯片，具有第一半导体器件，第一焊盘和位于插入件上的第一焊球，第一半导体器件连接到第一焊盘，第一焊盘连接到第一焊球; 具有第二半导体器件的第二芯片，第二焊盘和位于第一芯片上的第二焊球，第二半导体器件连接到第二焊盘，第二焊盘连接到第二焊球; 以及设置在所述插入件的后侧的端子，其中所述布线和所述第一芯片经由所述第一焊球连接，其中所述第一芯片和所述第二芯片经由所述第二焊球连接，并且所述端子连接到第一个半导体器件。

62. 发明授权

US08012854B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08012854B2
公开(公告)日：2011-09-06
申请号：US13045560
申请日：2011-03-11
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L21/30
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。

63. 发明申请

US20070158745A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070158745A1
公开(公告)日：2007-07-12
申请号：US11713606
申请日：2007-03-05
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L27/12 , H01L27/01
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： (Object) It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. (Solving Means) When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
摘要翻译：（对象）本发明的目的是提供一种不会对被剥离层造成损害的剥离方法，并且不仅允许以小的表面积剥离层，而且还可以使用剥离层大的表面积要完全剥离。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。（解决方案）当在基板上设置金属层11时，设置与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11 进行氧化并形成金属氧化物层16，通过金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面，可以进行清晰的分离。

64. 发明授权

US07180093B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07180093B2
公开(公告)日：2007-02-20
申请号：US10697941
申请日：2003-10-31
申请人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Yumiko Ohno , Masakazu Murakami , Toshiji Hamatani , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L29/04 , H01L29/15
CPC分类号： H01L27/3276 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1266 , H01L27/14634 , H01L27/14643 , H01L27/14683 , H01L27/3272 , H01L29/66757 , H01L29/78603 , H01L31/105 , H01L51/0024 , H01L51/003 , H01L51/5212 , H01L51/5253 , H01L2221/68368
摘要： The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.
摘要翻译：本发明的目的是通过将要剥离的层粘贴到各种基材上来提供照明的半导体器件及其制造方法。在本发明中，在基板上形成被剥离层，然后将具有蚀刻阻挡膜的密封基板用粘合材料粘贴在被剥离层上，然后通过蚀刻或抛光仅去除密封基板。剩余的蚀刻阻挡膜用作阻挡膜。此外，可以将磁片作为粘贴部件粘贴。

65. 发明申请

US20060220211A1 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance 有权
公开(公告)号：US20060220211A1
公开(公告)日：2006-10-05
申请号：US11440116
申请日：2006-05-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
IPC分类号： H01L23/02
CPC分类号： H01L21/02667 , C30B13/24 , C30B29/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2223/54473 , H01L2224/1134 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83102 , H01L2224/83192 , H01L2224/92125 , H01L2224/92247 , H01L2225/06524 , H01L2225/06555 , H01L2225/1023 , H01L2225/1058 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/15331 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2224/13099 , H01L2924/00 , H01L2924/3512
摘要： According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 μm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 μm, preferably at most 2 μm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.

66. 发明授权

US07056810B2 Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance 有权
标题翻译：半导体装置的制造方法以及半导体装置及电器
公开(公告)号：US07056810B2
公开(公告)日：2006-06-06
申请号：US10728933
申请日：2003-12-08
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Koichiro Tanaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/02667 , C30B13/24 , C30B29/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L21/6835 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2223/54473 , H01L2224/1134 , H01L2224/16145 , H01L2224/16225 , H01L2224/16235 , H01L2224/29198 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/81203 , H01L2224/81205 , H01L2224/81801 , H01L2224/83102 , H01L2224/83192 , H01L2224/92125 , H01L2224/92247 , H01L2225/06524 , H01L2225/06555 , H01L2225/1023 , H01L2225/1058 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15183 , H01L2924/15311 , H01L2924/15331 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00014 , H01L2924/00012 , H01L2224/13099 , H01L2924/00 , H01L2924/3512
摘要： According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 μm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 μm, preferably at most 2 μm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.
摘要翻译：根据本发明的封装和封装的制造方法，可以将芯片形成得非常薄，并以较低的成本和较高的生产量进行制造，并且可以减少芯片厚度的变化，而不会造成后面的研磨裂纹或抛光痕迹。在本发明中，沉积在用作支撑介质的基板上的厚度最大为500μm的半导体膜用CW激光结晶，并且具有半导体器件的芯片形成为具有5μm的总厚度，优选至多2μm，通过使用结晶的半导体膜。因此，在分离衬底之后，将芯片安装在插入器上。

67. 发明授权

US07923348B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07923348B2
公开(公告)日：2011-04-12
申请号：US12480752
申请日：2009-06-09
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L21/30
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFF, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFF代表的各种元件（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。

68. 发明授权

US07511380B2 Semiconductor chip and method manufacturing the same 有权
标题翻译：半导体芯片和制造方法相同
公开(公告)号：US07511380B2
公开(公告)日：2009-03-31
申请号：US11420390
申请日：2006-05-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L23/48
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/29 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L27/1214 , H01L2221/68359 , H01L2221/68368 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8319 , H01L2224/83205 , H01L2224/838 , H01L2224/83805 , H01L2224/83851 , H01L2224/92247 , H01L2225/0651 , H01L2225/06541 , H01L2225/06586 , H01L2225/06589 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , H01L2924/00012 , H01L2924/00 , H01L2924/01014 , H01L2924/01003 , H01L2924/01007 , H01L2924/01012 , H01L2924/01022 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599
摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
摘要翻译：通过转印技术提供具有形成为集成薄膜的多个器件形成层的半导体芯片。根据本发明，可以通过转移厚度最多为50um的器件形成层，通过技术将其从衬底分离成另一衬底而制成形成薄膜并且高度集成的半导体芯片用于转移和转移厚度至多为50um的另一器件形成层，其从另一衬底分离到上述器件形成层，并且重复该转印过程。

69. 发明申请

US20060214306A1 Semiconductor Chip and Method for Manufacturing the Same 有权
标题翻译：半导体芯片及其制造方法
公开(公告)号：US20060214306A1
公开(公告)日：2006-09-28
申请号：US11420390
申请日：2006-05-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L23/52 , H01L29/04
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/29 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/50 , H01L27/1214 , H01L2221/68359 , H01L2221/68368 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8319 , H01L2224/83205 , H01L2224/838 , H01L2224/83805 , H01L2224/83851 , H01L2224/92247 , H01L2225/0651 , H01L2225/06541 , H01L2225/06586 , H01L2225/06589 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/04941 , H01L2924/0665 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/181 , H01L2924/30105 , H01L2924/00012 , H01L2924/00 , H01L2924/01014 , H01L2924/01003 , H01L2924/01007 , H01L2924/01012 , H01L2924/01022 , H01L2224/05541 , H01L2224/05005 , H01L2224/05599
摘要： A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 μm which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 μm which is separated from another substrate to the above device formative layer, and, repeating such transferring process.
摘要翻译：通过转印技术提供具有形成为集成薄膜的多个器件形成层的半导体芯片。根据本发明，可以通过转移厚度最多为50um的器件形成层，通过技术将其从衬底分离成另一衬底而制成形成薄膜并且高度集成的半导体芯片用于转移和转移厚度至多为50um的另一器件形成层，其从另一衬底分离到上述器件形成层，并且重复该转印过程。

70. 发明申请

US20060186399A1 Semiconductor apparatus and fabrication method of the same 有权
公开(公告)号：US20060186399A1
公开(公告)日：2006-08-24
申请号：US11206000
申请日：2005-08-18
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L29/08
CPC分类号： H01L23/12 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/3244 , H01L27/3281 , H01L29/78603 , H01L51/003 , H01L51/0097 , H01L51/524 , H01L51/529 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2251/5338 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.

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