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61. 发明申请

US20090291536A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090291536A1
公开(公告)日：2009-11-26
申请号：US12534176
申请日：2009-08-03
申请人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
发明人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1251 , H01L27/1288 , H01L27/14623 , H01L27/3244 , H01L29/78645
摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.
摘要翻译：本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化，并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极。此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

62. 发明授权

US07608490B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07608490B2
公开(公告)日：2009-10-27
申请号：US11440175
申请日：2006-05-25
申请人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1285 , H01L27/1288
摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.
摘要翻译：为了提供具有高操作性能和高可靠性的电路的半导体器件，并且提高了半导体器件的可靠性，从而提高了具有该半导体器件的电子器件的可靠性。上述目的是通过在沿一个方向扫描的同时，通过照射连续波激光束或重复频率为10MHz或更高的脉冲激光束来结合半导体层结晶步骤来实现的; 使用光掩模或包含由衍射光栅图案形成的辅助图案或具有降低光强度功能的半透射膜的吸收体的光刻步骤; 以及对具有低电子温度的高密度等离子体对半导体膜，绝缘膜或导电膜的表面进行氧化，氮化或表面改性的步骤。

63. 发明授权

US07579220B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US07579220B2
公开(公告)日：2009-08-25
申请号：US11383694
申请日：2006-05-16
申请人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
发明人： Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1251 , H01L27/1288 , H01L27/14623 , H01L27/3244 , H01L29/78645
摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.
摘要翻译：本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化，并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极。此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

64. 发明授权

US07476908B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US07476908B2
公开(公告)日：2009-01-13
申请号：US11121070
申请日：2005-05-04
申请人： Shunpei Yamazaki , Hideto Ohnuma , Aya Anzai , Masayuki Sakakura , Hiromichi Godo
发明人： Shunpei Yamazaki , Hideto Ohnuma , Aya Anzai , Masayuki Sakakura , Hiromichi Godo
IPC分类号： H01L29/207 , H01L33/00
CPC分类号： H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L51/5262
摘要： An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.
摘要翻译：本发明的一个目的是提供一种发光装置，其中发光光谱的变化取决于用于观察发射光的表面的角度。本发明的发光器件包括形成在衬底上的第一绝缘层，形成在第一绝缘层上的第二绝缘层，以及形成在第二绝缘层上的半导体层。形成栅极绝缘层以覆盖第二绝缘层和半导体层。在栅绝缘层上形成栅电极。形成第一层间绝缘层以覆盖栅极绝缘层和栅电极。通过第一层间绝缘层，栅极绝缘层和第二绝缘层形成开口。形成第二层间绝缘层以覆盖第一绝缘层和开口。在开口上形成发光元件。

65. 发明授权

US07442963B2 Light emitting apparatus and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07442963B2
公开(公告)日：2008-10-28
申请号：US11224100
申请日：2005-09-13
申请人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
发明人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
IPC分类号： H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译：本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。根据本发明的具有薄膜晶体管和发光元件的发光装置包括：栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层由氮化硅或氮化铝形成。

66. 发明授权

US07306978B2 Light emitting device and method of manufacturing thereof 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07306978B2
公开(公告)日：2007-12-11
申请号：US10941837
申请日：2004-09-16
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Keiko Saito , Hisao Ikeda
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Keiko Saito , Hisao Ikeda
IPC分类号： H01L21/00
CPC分类号： H01L51/56 , H01L27/3244 , H01L27/3246 , H01L51/5203 , H01L51/5262 , H01L2251/5315 , H01L2251/5323
摘要： The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.
摘要翻译：本发明提供了具有高亮度和低功耗的高发光效率（光提取效率）的高度稳定的发光器件及其制造方法。分隔壁和耐热平面化膜由相同的材料形成以便彼此良好地粘附，从而降低材料成本。在耐热平面化膜上形成阳极或阴极。分隔壁和耐热平面化膜彼此粘合而不插入其间具有不同折射率的膜，因此在界面上不会引起光的反射。

67. 发明授权

US07301279B2 Light-emitting apparatus and method of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07301279B2
公开(公告)日：2007-11-27
申请号：US10098617
申请日：2002-03-18
申请人： Masayuki Sakakura , Shunpei Yamazaki
发明人： Masayuki Sakakura , Shunpei Yamazaki
IPC分类号： H01L51/52
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L51/5206 , H01L51/5253 , H01L2227/323
摘要： A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
摘要翻译：本发明的发光装置包括：形成在绝缘表面上的第一电极; 覆盖所述第一电极的端部并具有锥形边缘的第一绝缘层; 第二绝缘层，形成在第一电极和第一绝缘层上，并且由选自氧化硅，氮化硅和氮氧化硅中的一种或多种形成; 形成在所述第二绝缘层上的有机化合物层; 以及形成在有机化合物层上的第二电极。

68. 发明申请

US20060275710A1 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20060275710A1
公开(公告)日：2006-12-07
申请号：US11440175
申请日：2006-05-25
申请人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Hideto Ohnuma , Masaharu Nagai , Mitsuaki Osame , Masayuki Sakakura , Shigeki Komori
IPC分类号： G03F7/26
CPC分类号： H01L21/02683 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/02686 , H01L21/2026 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1285 , H01L27/1288
摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

69. 发明授权

US07042024B2 Light emitting apparatus and method for manufacturing the same 失效
公开(公告)号：US07042024B2
公开(公告)日：2006-05-09
申请号：US10289261
申请日：2002-11-07
申请人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
发明人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
IPC分类号： H01L29/24 , H01L33/00
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

70. 发明授权

US06903377B2 Light emitting apparatus and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US06903377B2
公开(公告)日：2005-06-07
申请号：US10290478
申请日：2002-11-08
申请人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
发明人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
IPC分类号： H01L27/32 , H01L51/52 , H01L33/00
CPC分类号： H01L27/3244 , H01L27/124 , H01L27/1248 , H01L27/3246 , H01L29/78621 , H01L29/78627 , H01L51/5234 , H01L51/5253 , H01L2251/5315 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus including a TFT and organic light emitting elements. The light emitting apparatus according to the invention having a thin film transistor and a light emitting element includes a first inorganic insulation layer on the lower surface of a semiconductor layer, a second inorganic insulation layer on the upper surface of a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an organic compound layer formed in contact with the cathode layer and the fourth inorganic insulation layer and including light emitting material, and an anode layer formed in contact with the organic compound layer including the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译：本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。根据本发明的具有薄膜晶体管和发光元件的发光装置包括在半导体层的下表面上的第一无机绝缘层，在栅电极的上表面上的第二无机绝缘层，第一有机所述第二无机绝缘层上的绝缘层，所述第一有机绝缘层上的第三无机绝缘层，在所述第三无机绝缘层上延伸的布线层，与所述布线层的端部重叠的第二有机绝缘层， 35〜45度的第四无机绝缘层，形成在所述第二有机绝缘层的上表面和侧面的第四无机绝缘层，并且在所述布线层上具有开口;阴极层，与所述布线层接触形成，第四无机绝缘层和与阴极层接触形成的有机化合物层包括发光材料的第四无机绝缘层和与包括发光材料的有机化合物层接触形成的阳极层，其中第三无机绝缘层和第四无机绝缘层由氮化硅或氮化铝形成。

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