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61. 发明申请

US20060175962A1 Organic EL display 失效
标题翻译：有机EL显示屏
公开(公告)号：US20060175962A1
公开(公告)日：2006-08-10
申请号：US11234189
申请日：2005-09-26
申请人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi
发明人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi
IPC分类号： H05B33/02
CPC分类号： H01L51/5262 , H01L27/3211
摘要： In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional diffraction grating having two grating periods.
摘要翻译：在设置有透明基板的有机EL显示器中，设置在透明基板上的缓冲层和设置在缓冲层上的有机EL元件，缓冲层由具有与透明基板的透明电极相同的折射率的材料形成 EL元件，并且具有具有两个光栅周期的二维衍射光栅。

62. 发明申请

US20050112886A1 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20050112886A1
公开(公告)日：2005-05-26
申请号：US10976987
申请日：2004-11-01
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L33/22 , B32B1/00 , H01L21/302 , H01L21/461
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a resin composition which contains a block copolymer or graft copolymer and forms a micophase-separated structure in a self-organization manner; selectively removing at least one phase of the microphase-separated structure of the thin film formed on the surface; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。本发明的发光元件表面上的粗糙结构形成为以下形状，使得折射率平滑地变化：（1）粗糙面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从其在光波长内的平均值分布，以便给出折射率的平滑梯度。这种发光元件的表面通过使用含有嵌段共聚物或接枝共聚物的树脂组合物在发光元件的表面上形成薄膜而以自组织形式形成微晶相分离结构而获得; 选择性地除去形成在表面上的薄膜的微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

63. 发明授权

US06825056B2 Light-emitting device and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US06825056B2
公开(公告)日：2004-11-30
申请号：US10330086
申请日：2002-12-30
申请人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
发明人： Koji Asakawa , Akira Fujimoto , Hitoshi Sugiyama , Kenichi Ohashi , Kenji Suzuki , Junichi Tonotani
IPC分类号： H01L2100
CPC分类号： H01L33/22 , H01L21/0271
摘要： A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure is formed into the following shape to change refractive index smoothly: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength. The surface of such light-emitting element is obtained by forming a thin film on the surface of the light-emitting element using a block or graft copolymer comprising resin composition and forms a self-assembled microphase-separated structure; selectively removing at least one phase of the microphase-separated structure; and etching the surface of the light-emitting element using the remaining phase as an etching mask.
摘要翻译：在发光元件的表面上形成纳米尺寸的粗糙结构，并提高发光效率。粗糙结构形成为以下形状以平滑地改变折射率：（1）粗糙表面上的突起的平均直径小于光波长; （2）粗糙表面的间距不规则; 和（3）粗糙表面的顶部和底部的位置从它们在光波长内的平均值分布。这种发光元件的表面通过使用包含树脂组合物的嵌段或接枝共聚物在发光元件的表面上形成薄膜而获得，并形成自组装的微相分离结构; 选择性地除去微相分离结构的至少一个相; 并使用剩余的相作为蚀刻掩模蚀刻发光元件的表面。

64. 发明授权

US08941158B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08941158B2
公开(公告)日：2015-01-27
申请号：US12875809
申请日：2010-09-03
申请人： Yoshinori Iida , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Hisayo Momose , Koichi Kokubun , Nobuyuki Momo
发明人： Yoshinori Iida , Eishi Tsutsumi , Akira Fujimoto , Koji Asakawa , Hisayo Momose , Koichi Kokubun , Nobuyuki Momo
IPC分类号： H01L31/0216 , H01L27/146
CPC分类号： H01L27/1464 , H01L27/1462 , H01L27/1463
摘要： Certain embodiments provide a solid-state imaging device including: a semiconductor substrate of a first conductivity type having a first face and a second face that is the opposite side from the first face; a plurality of pixels provided on the first face of the semiconductor substrate, each of the pixels including a semiconductor region of a second conductivity type that converts incident light into signal charges, and stores the signal charges; a readout circuit provided on the second face of the semiconductor substrate to read the signal charges stored in the pixels; an ultrafine metal structure placed at intervals on a face on a side of the semiconductor region, the light being incident on the face; and an insulating layer provided between the ultrafine metal structure and the semiconductor region.
摘要翻译：某些实施例提供了一种固态成像装置，包括：第一导电类型的半导体衬底，其具有第一面和与第一面相反一侧的第二面; 设置在半导体衬底的第一面上的多个像素，每个像素包括将入射光转换为信号电荷的第二导电类型的半导体区域，并存储信号电荷; 读出电路，设置在半导体衬底的第二面上，以读取存储在像素中的信号电荷; 在半导体区域的一侧的表面上间隔放置的超细金属结构，该光入射到该面上; 以及设置在超细金属结构和半导体区域之间的绝缘层。

65. 发明授权

US08840258B2 Antireflection structure formation method and antireflection structure 有权
标题翻译：抗反射结构形成方法和抗反射结构
公开(公告)号：US08840258B2
公开(公告)日：2014-09-23
申请号：US13723374
申请日：2012-12-21
申请人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino , Shinobu Sugimura
发明人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino , Shinobu Sugimura
IPC分类号： G02B27/00 , C03C15/00 , C03C17/00 , G02B1/11
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
摘要翻译：本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。此外，本发明还提供了通过该方法形成的抗反射结构。在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。也可以通过使用压模的纳米压印方法制造抗反射结构。通过使用根据上述形成方法制造的母版形成压模。

66. 发明授权

US08686459B2 Light-transmitting metal electrode and process for production thereof 有权
标题翻译：透光金属电极及其制造方法
公开(公告)号：US08686459B2
公开(公告)日：2014-04-01
申请号：US12236132
申请日：2008-09-23
申请人： Eishi Tsutsumi , Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa
发明人： Eishi Tsutsumi , Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa
IPC分类号： H01L33/00
CPC分类号： H01B13/0036 , H01J1/02 , H01J9/02 , H01J17/04 , H01J63/02 , H01J2217/49207
摘要： The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.
摘要翻译：本发明提供一种透光性金属电极，其具有基板和具有多个开口部的金属电极层。金属电极层还具有这样的连续的金属部分，即零件中的任何一个点位置连续连接而不断裂。周期性地布置金属电极层中的开口以形成多个微区域。多个微区被放置成使得其面内排列方向彼此独立地取向。金属电极层的厚度在10〜200nm的范围内。

67. 发明授权

US08361339B2 Antireflection structure formation method and antireflection structure 有权
标题翻译：抗反射结构形成方法和抗反射结构
公开(公告)号：US08361339B2
公开(公告)日：2013-01-29
申请号：US12347187
申请日：2008-12-31
申请人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino , Shinobu Sugimura
发明人： Tsutomu Nakanishi , Akira Fujimoto , Koji Asakawa , Takeshi Okino , Shinobu Sugimura
IPC分类号： C25F3/00 , C03C15/00 , C03C25/00
CPC分类号： G02B1/118 , B81C1/0046 , C03C15/00 , C03C17/007 , C03C17/28 , C03C2217/42 , C03C2217/77 , C03C2218/34 , C03C2218/355 , Y10T428/24421
摘要： The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
摘要翻译：本发明提供这样一种形成方法，即可以大面积且成本低的方式形成具有优异的抗反射功能的抗反射结构。此外，本发明还提供了通过该方法形成的抗反射结构。在形成方法中，对基底层和放置在其上的颗粒进行蚀刻处理。基层上的颗粒在该过程中用作蚀刻掩模，因此它们比基层更耐腐蚀。基层与颗粒的蚀刻速率比大于1但不大于5.蚀刻过程在颗粒消失之前停止。也可以通过使用压模的纳米压印方法制造抗反射结构。通过使用根据上述形成方法制造的母版形成压模。

68. 发明申请

US20120073651A1 PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：光电转换元件
公开(公告)号：US20120073651A1
公开(公告)日：2012-03-29
申请号：US13228754
申请日：2011-09-09
申请人： Akira Fujimoto , Eishi Tsutsumi , Tsutomu Nakanishi , Kumi Masunaga , Kenji Nakamura , Koji Asakawa
发明人： Akira Fujimoto , Eishi Tsutsumi , Tsutomu Nakanishi , Kumi Masunaga , Kenji Nakamura , Koji Asakawa
IPC分类号： H01L31/0368 , H01L31/02
CPC分类号： H01L31/0236 , H01L31/02168 , H01L31/02363 , H01L31/0543 , H01L31/055 , H01L31/068 , H01L31/073 , Y02E10/52 , Y02E10/543 , Y02E10/547
摘要： A photoelectric conversion element according to an embodiments includes: a first metal layer; a semiconductor layer formed on the first metal layer; a second metal layer formed on the semiconductor layer, the second metal layer comprising a porous thin film with a plurality of openings each having a mean area not smaller than 80 nm2 and not larger than 0.8 μm2 or miniature structures having a mean volume not smaller than 4 nm3 and not larger than 0.52 μm3; and a wavelength converting layer formed between the semiconductor layer and the second metal layer, at least a refractive index of a portion of the wavelength converting layer being lower than a refractive index of a material of the semiconductor layer, the portion being at a distance of 5 nm or shorter from an end portion of the second metal layer.
摘要翻译：根据实施例的光电转换元件包括：第一金属层; 形成在所述第一金属层上的半导体层; 形成在所述半导体层上的第二金属层，所述第二金属层包括具有多个开口的多孔薄膜，每个开口的平均面积不小于80nm 2且不大于0.8μm2，或平均体积不小于 4nm3且不大于0.52μm3; 以及形成在所述半导体层和所述第二金属层之间的波长转换层，所述波长转换层的一部分的折射率的至少折射率低于所述半导体层的材料的折射率，所述部分距离距第二金属层的端部为5nm以下。

69. 发明授权

US07741649B2 Semiconductor light emitting device and method for manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07741649B2
公开(公告)日：2010-06-22
申请号：US12246099
申请日：2008-10-06
申请人： Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
发明人： Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
IPC分类号： H01L29/207
CPC分类号： H01L33/22
摘要： In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.
摘要翻译：在半导体发光器件中，半导体发光元件具有在其上形成有多个凸起结构的光提取表面。凸起结构各自具有构成折射率梯度结构的圆锥台面部分，构成衍射光栅结构的圆筒部分和构成折射率梯度结构的锥形部分。台面部分，圆柱形部分和锥形部分从光提取表面依次排列。凸结构之间的周期长于发射波长的1 /（外部介质的折射率+凸起结构的折射率）等于或小于发射波长。圆筒部分的圆当量平均直径是台面部分底部的圆当量平均直径的1/3至9/10。

70. 发明授权

US07714316B2 Method of manufacturing semiconductor device, acid etching resistance material and copolymer 有权
标题翻译：制造半导体器件的方法，耐酸蚀材料和共聚物
公开(公告)号：US07714316B2
公开(公告)日：2010-05-11
申请号：US12119854
申请日：2008-05-13
申请人： Koji Asakawa , Kenichi Ohashi , Akira Fujimoto , Takashi Sasaki
发明人： Koji Asakawa , Kenichi Ohashi , Akira Fujimoto , Takashi Sasaki
IPC分类号： H01L29/12
CPC分类号： H01L21/78 , C08F220/28 , H01L21/30608 , H01L21/3081 , H01L21/67086 , H01L33/22
摘要： Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
摘要翻译：公开了一种耐酸腐蚀性材料，其包含具有由以下通式（1）表示的重复单元的化合物：（在通式（1）中，R 1为氢原子或甲基; R 3为选自脂环族基团和芳香族基团; R4为极性基团，R2为下述通式（2）表示的基团，j为0或1）:(通式（2）中，R 5为氢原子或甲基）。

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