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61. 发明授权

US06639923B2 Semiconductor laser device for optical communication 失效
公开(公告)号：US06639923B2
公开(公告)日：2003-10-28
申请号：US10012311
申请日：2001-12-12
申请人： Makoto Sato , Kenji Masuda , Akihiro Adachi , Yasunori Nishimura , Shinichi Takagi , Masao Imaki , Yoshihito Hirano
发明人： Makoto Sato , Kenji Masuda , Akihiro Adachi , Yasunori Nishimura , Shinichi Takagi , Masao Imaki , Yoshihito Hirano
IPC分类号： H01S5022
CPC分类号： H01S5/02252 , H01L2224/48091 , H01L2924/19107 , H01S5/02284 , H01S5/02296 , H01S5/0683 , H01S5/0687 , H01L2924/00014
摘要： A backward laser beam radiated from a laser diode is received in a photo diode, and an intensity of a forward laser beam radiated from the laser diode is adjusted according to the intensity of the received backward laser beam. The forward laser beam radiated from the laser diode is collimated in a first lens held by a lens holder, and a most portion of the forward laser beam is output through a package window inclined with respect to an optical axis of the laser diode. The remaining portion of the forward laser beam is reflected on the package window as a reflected laser beam and is transmitted through the first lens to be converged in a narrow area placed above the laser diode. A light shielding plate extending in a plane orthogonal to the optical axis is arranged in a wide area including the narrow area and shields the photo diode from the reflected laser beam from. Therefore, the intensity of the forward laser beam radiated from the laser diode is correctly adjusted. Also, the light shielding plate is not soldered to the laser diode but is fixed to lens fixing posts arranged to support the lens holder. Therefore, a driving current can be supplied to the laser diode through a bonding wire without being influenced by the light shielding plate.

62. 发明授权

US06583437B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06583437B2
公开(公告)日：2003-06-24
申请号：US09810607
申请日：2001-03-19
申请人： Tomohisa Mizuno , Naoharu Sugiyama , Shinichi Takagi
发明人： Tomohisa Mizuno , Naoharu Sugiyama , Shinichi Takagi
IPC分类号： H01L310328
CPC分类号： H01L21/76243 , H01L21/26533 , H01L29/1054 , H01L29/78687 , Y10S438/933 , Y10S438/938
摘要： A method of manufacturing a semiconductor device which includes forming a first SiGe layer having a low content of Ge, forming an oxide layer by implanting oxygen ions into the first SiGe layer, and then annealing the first SiGe layer. The method also includes forming, on the first SiGe layer, a second SiGe layer which has a higher content of Ge than the first SiGe layer, forming a strained Si layer on the second SiGe layer, and forming a field effect transistor in which the strained Si layer is used a channel region. Further, a field effect transistor may be formed on a semiconductor substrate having an indefectible, high-quality, buried oxide layer and a largely strained Si layer, and hence a high-speed, low-power-consumption semiconductor device can be realized.
摘要翻译：一种制造半导体器件的方法，包括：通过将氧离子注入到第一SiGe层中形成具有低Ge含量的第一SiGe层，形成氧化层，然后退火第一SiGe层。该方法还包括在第一SiGe层上形成第二SiGe层，其具有比第一SiGe层更高的Ge含量，在第二SiGe层上形成应变Si层，并形成其中应变的场效晶体管 Si层用于沟道区。此外，可以在具有不可缺的，高质量的掩埋氧化物层和大的应变Si层的半导体衬底上形成场效应晶体管，因此可以实现高速，低功耗的半导体器件。

63. 发明授权

US06509587B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06509587B2
公开(公告)日：2003-01-21
申请号：US09955144
申请日：2001-09-19
申请人： Naoharu Sugiyama , Tsutomu Tezuka , Tomohisa Mizuno , Shinichi Takagi
发明人： Naoharu Sugiyama , Tsutomu Tezuka , Tomohisa Mizuno , Shinichi Takagi
IPC分类号： H01L350328
CPC分类号： H01L27/1203 , H01L21/84
摘要： High-speed and low-power-consuming transistors such as field effect transistors having strained Si channels and hetero-bipolar transistors are integrated with each other. Used here is a complex structure in which an MOSFET having a thin-film SiGe buffer layer and a strained Si channel are laminated on an insulating film and an HBT having an SiGe base layer formed on a thin-film SiGe layer by epitaxial growth and an Si emitter layer formed on the SiGe base layer are combined with each other. The thin-film SiGe layer formed on the insulating film of the MOSFET is made thinner than the counterpart of the HBT. The thin-film SiGe layer formed on the insulating film of the MOSFET has Ge concentration higher than that of the counterpart of the HBT.
摘要翻译：诸如具有应变Si沟道和异质双极晶体管的场效应晶体管的高速和低功耗晶体管彼此集成。这里使用的是这样的复杂结构，其中具有薄膜SiGe缓冲层和应变Si沟道的MOSFET层叠在绝缘膜上，并且通过外延生长在薄膜SiGe层上形成具有SiGe基层的HBT，形成在SiGe基底层上的Si发射极层彼此结合。在MOSFET的绝缘膜上形成的薄膜SiGe层比HBT的对应物薄。在MOSFET的绝缘膜上形成的薄膜SiGe层的Ge浓度高于HBT的绝缘膜。

64. 发明授权

US5007884A Belt for high load transmission 失效
标题翻译：皮带用于高负载传输
公开(公告)号：US5007884A
公开(公告)日：1991-04-16
申请号：US462611
申请日：1990-01-09
申请人： Takashi Masuda , Kengiro Hashimoto , Shinichi Takagi , Masayuki Tanaka
发明人： Takashi Masuda , Kengiro Hashimoto , Shinichi Takagi , Masayuki Tanaka
IPC分类号： F16G5/16 , F16G1/22
CPC分类号： F16G5/16 , F16G5/166
摘要： A power transmission belt having longitudinally spaced pairs of blocks on the opposite surfaces of a neutral belt portion thereof. The blocks are formed of hard synthetic resin materials having fibers distributed therein. The fibers may be provided in the form of distributed short fibers, fabrics, and one or more different types of fibers may be utilized in the respective blocks. The fibers include carbon fibers, aramid fibers, and silicon carbide fibers. The neutral belt is provided with longitudinally spaced projections on the upper and lower surfaces thereof and the blocks are provided with complementary recesses receiving the projections. The recesses are preferably deeper than the height of the projections, whereby the distal surfaces of the blocks may be urged with high frictional engagement against the flat surfaces of the neutral belt. The blocks are resiliently clamped to the neutral belt and the clamping forces are urged through the neutral belt to the tensile cord carried therein for further improved stabilization of the blocks on the neutral belt.

65. 发明授权

US4781658A Power transmission mechanism 失效
标题翻译：动力传动机构
公开(公告)号：US4781658A
公开(公告)日：1988-11-01
申请号：US457466
申请日：1983-01-12
申请人： Hiroshi Takano , Shinichi Takagi , Akihiro Fujita
发明人： Hiroshi Takano , Shinichi Takagi , Akihiro Fujita
IPC分类号： F16H7/02 , F16G5/10 , F16G5/20 , F16H9/12 , F16H57/04 , F16H57/05
CPC分类号： F16H7/02 , F16G5/10 , F16G5/20 , F16H57/0456 , F16H57/0457 , F16H57/0489 , F16H7/023 , F16H9/12 , F16H2007/026
摘要： A power transmission mechanism (10) having a V-belt (11) provided with transverse reinforcing elements (22). The V-belt, in the illustrated embodiment, defines a cog belt wherein the reinforcing elements are disposed within the cogs (15) thereof to have opposite end surfaces (23) exposed at the side edge surfaces (21) of the belt. A thin film of lubricating fluid (27) is provided on the exposed end surfaces of the reinforcing elements for improved long troublefree operation of the mechanism. Different structures for providing the thin film of lubricating fluid are disclosed. In the illustrated embodiments, the thin film extends along the entire side edge surfaces of the V-belt.
摘要翻译：具有设置有横向增强元件（22）的V形带（11）的动力传递机构（10）。在所示实施例中，V形皮带限定了一种齿形带，其中增强元件设置在其内齿轮（15）内，以具有在皮带的侧边缘表面（21）处露出的相对端表面（23）。润滑流体（27）的薄膜设置在加强元件的暴露的端面上，以改善机构的长期无故障操作。公开了用于提供润滑流体薄膜的不同结构。在所示实施例中，薄膜沿着V形带的整个侧边缘表面延伸。

66. 发明授权

US4642080A Power transmission belt 失效
标题翻译：动力传动皮带
公开(公告)号：US4642080A
公开(公告)日：1987-02-10
申请号：US697445
申请日：1985-02-01
申请人： Hiroshi Takano , Shinichi Takagi , Kiyokazu Wada
发明人： Hiroshi Takano , Shinichi Takagi , Kiyokazu Wada
IPC分类号： F16G1/22 , F16G5/16 , F16G1/21
CPC分类号： F16G5/16 , F16G1/22 , F16G5/166 , Y10S428/902 , Y10T428/31826
摘要： A power transmission belt for transmitting high loads having an elastomeric looped flat belt portion having a longitudinally extending tensile cord and defining an outer surface and an inner surface, and a plurality of longitudinally extending spaced blocks mounted to the outer and inner surfaces respectively of the flat belt portion. Each block is formed of a core and a fabric wrapped around the core. In one embodiment, the block is secured to the flat belt portion by bolts extending therethrough. The fabric of the blocks may be treated with different materials, such as rubber, synthetic resins, and the like. The core may be formed of an elastomeric material. The flat belt portion may be provided with one or more layers of fabric.
摘要翻译：一种用于传送高载荷的动力传递带，所述传动带具有弹性环形平坦带部分，所述弹性环形平坦带部分具有纵向延伸的拉伸绳索并且限定外表面和内表面，以及多个纵向延伸的间隔开的块，分别安装到所述平面的外表面和内表面皮带部分。每个块由芯和包裹在芯周围的织物形成。在一个实施例中，通过从其延伸的螺栓将块固定到平带部分。块体的织物可以用不同的材料，例如橡胶，合成树脂等进行处理。芯可以由弹性体材料形成。扁平带部分可以设置有一层或多层织物。

67. 发明授权

US4244843A Covulcanized rubber 失效
标题翻译：硫化橡胶
公开(公告)号：US4244843A
公开(公告)日：1981-01-13
申请号：US68364
申请日：1979-08-21
申请人： Kenjiro Hashimoto , Shinichi Takagi , Harunori Okamoto , Minoru Miura
发明人： Kenjiro Hashimoto , Shinichi Takagi , Harunori Okamoto , Minoru Miura
IPC分类号： C08J3/24 , C08L21/00 , C08L23/16 , C08L23/20 , C08L7/00 , C08L9/02 , C08L9/06 , C08L9/00
CPC分类号： C08L21/00 , C08J3/246 , C08L23/16 , C08L23/20 , C08L2312/00
摘要： A rubber composition and a process for the preparation of rubber compositions comprising, in the presence of a metal oxide, vulcanizing, or vulcanizing after blending with another unsaturated rubber, of the reaction product of (1) an unsaturated rubber, sulfur and a sulfur cleaving agent, (2) an unsaturated rubber and a mercaptan compound, (3) a halogenated unsaturated rubber and a metal salt of a sulfur cleaving agent, or (4) an unsaturated rubber, a sulfur cleaving agent and a compound having a functional group such as a nitrile oxide, a nitroso or a thionylamine.
摘要翻译：橡胶组合物和制备橡胶组合物的方法，包括在与另一种不饱和橡胶共混之后，在金属氧化物存在下硫化或硫化，（1）不饱和橡胶，硫和硫裂解的反应产物试剂，（2）不饱和橡胶和硫醇化合物，（3）卤化不饱和橡胶和硫裂解剂的金属盐，或（4）不饱和橡胶，硫裂解剂和具有官能团的化合物如作为腈氧化物，亚硝基或亚硫酰胺。

68. 发明授权

US08779471B2 Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer 失效
标题翻译：场效应晶体管，半导体晶片，场效应晶体管的制造方法及半导体晶片的制造方法
公开(公告)号：US08779471B2
公开(公告)日：2014-07-15
申请号：US13413216
申请日：2012-03-06
申请人： Masahiko Hata , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
发明人： Masahiko Hata , Hisashi Yamada , Noboru Fukuhara , Shinichi Takagi , Mitsuru Takenaka , Masafumi Yokoyama , Tetsuji Yasuda , Yuji Urabe , Noriyuki Miyata , Taro Itatani , Hiroyuki Ishii
IPC分类号： H01L29/66
CPC分类号： H01L29/7786 , H01L21/26553 , H01L29/4966 , H01L29/517 , H01L29/66318 , H01L29/66522
摘要： Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of Inx1Ga1-x1Asy1P1-y1 (0
摘要翻译：提供了一种场效应晶体管，其包括栅极绝缘层，与栅极绝缘层接触的第一半导体晶体层和第二半导体晶体层与第一半导体晶体层的晶格匹配或伪晶格匹配。这里，栅绝缘层，第一半导体晶体层和第二半导体晶体层按栅极绝缘层，第一半导体晶体层和第二半导体晶体层的顺序排列，第一半导体晶体层被制成的In x Ga 1-x As y 1 P 1-y 1（0

69. 发明授权

US08174095B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08174095B2
公开(公告)日：2012-05-08
申请号：US13037049
申请日：2011-02-28
申请人： Toshifumi Irisawa , Shinichi Takagi , Naoharu Sugiyama
发明人： Toshifumi Irisawa , Shinichi Takagi , Naoharu Sugiyama
IPC分类号： H01L29/04
CPC分类号： H01L21/84 , H01L27/1203 , H01L27/1207 , H01L29/045 , H01L29/1054 , H01L29/42392 , H01L29/7842 , H01L29/785 , H01L29/78684
摘要： A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a direction.
摘要翻译：半导体器件包括绝缘体层和具有n沟道的n沟道MIS晶体管和具有ap沟道的pMIS晶体管，其形成在绝缘体层上，其中n沟道MIS晶体管的n沟道由Si 层在通道长度方向上具有单轴拉伸应变，p沟道MIS晶体管的p沟道由沟道长度方向上具有单轴压缩应变的SiGe或Ge层形成，并且沟道长度方向 n沟道MIS晶体管和p沟道MIS晶体管是<110>方向。

70. 发明授权

US07679181B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07679181B2
公开(公告)日：2010-03-16
申请号：US11930350
申请日：2007-10-31
申请人： Junji Fujino , Shinichi Takagi
发明人： Junji Fujino , Shinichi Takagi
IPC分类号： H01L23/12
CPC分类号： H01L23/10 , H01L23/057 , H01L2924/0002 , H01L2924/01079 , H01L2924/16195 , H01L2924/163 , H01L2924/00
摘要： A semiconductor device includes: a package case in which a semiconductor element is mounted, the package case having a bonding portion; a cap having a bonding portion bonded to the bonding portion of the package case so as to hermetically seal the semiconductor element; and one or more bonding/sealing wires disposed between and in contact with the bonding portion of the package case and the bonding portion of the cap such that the one or more bonding/sealing wires form a closed loop and hermetically seal the semiconductor element.
摘要翻译：半导体器件包括：封装壳体，其中安装有半导体元件，所述封装壳体具有接合部分; 帽，其具有接合部分，其结合到所述封装壳体的所述接合部分，以密封所述半导体元件; 以及设置在封装壳体的接合部分和盖子的接合部分之间并与之接触的一个或多个接合/密封线，使得一个或多个接合/密封线形成闭环并气密地密封半导体元件。

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