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61. 发明授权

US07606096B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US07606096B2
公开(公告)日：2009-10-20
申请号：US11872264
申请日：2007-10-15
申请人： Mototsugu Hamada , TakahirO Hirai , Shiho Nakamura , Hirofumi Morise , Keiko Abe
发明人： Mototsugu Hamada , TakahirO Hirai , Shiho Nakamura , Hirofumi Morise , Keiko Abe
IPC分类号： G11C7/00 , G11C11/00 , H03K3/02
CPC分类号： G11C13/00 , G11C5/14 , G11C13/004 , G11C13/0069 , G11C14/009 , G11C2013/0042 , G11C2013/0054 , G11C2013/0073
摘要： A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode.
摘要翻译：半导体集成电路器件具有第一可变电阻器元件和第二可变电阻器元件，其电阻根据电流互补地改变; 以及电流路径切换电路，其通过根据正常操作模式还是读取模式在电流路径之间切换来从电源提供所述电流，其中所述电源在所述正常操作中被关闭然后再次导通模式，并且在该状态下，在所述读取模式中读取与所述第一可变电阻元件和所述第二可变电阻元件的电阻的大小之间的关系对应的数据。

62. 发明申请

US20090213638A1 Magnectic memory element and magnetic memory apparatus 有权
标题翻译：磁记忆元件和磁存储装置
公开(公告)号：US20090213638A1
公开(公告)日：2009-08-27
申请号：US12379402
申请日：2009-02-20
申请人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
发明人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11C11/22 , G11C11/14 , G11C11/00 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.
摘要翻译：磁存储元件设置有第一和第二铁磁固定层，铁磁存储层，非磁性第一和第二中间层。存储层设置在第一和第二固定层之间，具有可变的磁化方向。为了消除元件的写入电流的不对称性，提供元件，使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场，然后接收部分的磁化方向所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时，固定层彼此平行，反之亦然。

63. 发明申请

US20090015958A1 Magnetic recording device and magnetic recording apparatus 有权
标题翻译：磁记录装置和磁记录装置
公开(公告)号：US20090015958A1
公开(公告)日：2009-01-15
申请号：US12216918
申请日：2008-07-11
申请人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
发明人： Shiho Nakamura , Hirofumi Morise , Satoshi Yanagi , Daisuke Saida , Akira Kikitsu
IPC分类号： G11B5/02 , G11B5/62
CPC分类号： G11C11/22 , G11B5/66 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A magnetic recording device includes: a laminated body including: a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; and a third ferromagnetic layer with a variable magnetization direction. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by allowing electrons spin-polarized by passing a current in a direction generally perpendicular to the film plane of the layers of the laminated body to act on the second ferromagnetic layer, and by allowing a magnetic field generated by precession of the magnetization of the third ferromagnetic layer to act on the second ferromagnetic layer.
摘要翻译：磁记录装置包括：层叠体，包括：第一铁磁层，其具有基本上沿第一方向固定的磁化; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 和具有可变磁化方向的第三铁磁层。第二铁磁层的磁化方向可以响应于电流的取向而被确定，通过使电流通过沿着大体上垂直于层叠体的层的膜平面的方向的电流进行自旋极化以作用于第二铁磁层铁磁层，并且通过允许由第三铁磁层的磁化进行而产生的磁场作用在第二铁磁层上。

64. 发明申请

US20080298117A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
标题翻译：半导体集成电路设备
公开(公告)号：US20080298117A1
公开(公告)日：2008-12-04
申请号：US11872264
申请日：2007-10-15
申请人： Mototsugu Hamada , Takahiro Hirai , Shiho Nakamura , Hirofumi Morise , Keiko Abe
发明人： Mototsugu Hamada , Takahiro Hirai , Shiho Nakamura , Hirofumi Morise , Keiko Abe
IPC分类号： G11C11/34
CPC分类号： G11C13/00 , G11C5/14 , G11C13/004 , G11C13/0069 , G11C14/009 , G11C2013/0042 , G11C2013/0054 , G11C2013/0073
摘要： A semiconductor integrated circuit device, has a first variable resistor element and a second variable resistor element whose resistances are changed complementarily depending on a current; and a current path switching circuit that supplies said current from a power supply by switching between current paths according to whether a normal operation mode or a read mode is input externally, wherein said power supply is turned off and then turned on again in said normal operation mode, and in this state, data corresponding to the relationship between the magnitudes of the resistances of said first variable resistor element and said second variable resistor element is read in said read mode.
摘要翻译：半导体集成电路器件具有第一可变电阻器元件和第二可变电阻器元件，其电阻根据电流互补地改变; 以及电流路径切换电路，其通过根据正常操作模式还是读取模式在电流路径之间切换来从电源提供所述电流，其中所述电源在所述正常操作中被关闭然后再次导通模式，并且在该状态下，在所述读取模式中读取与所述第一可变电阻元件和所述第二可变电阻元件的电阻的大小之间的关系对应的数据。

65. 发明授权

US08569852B2 Magnetic oscillation element and spin wave device 有权
标题翻译：磁振动元件和自旋波装置
公开(公告)号：US08569852B2
公开(公告)日：2013-10-29
申请号：US13238631
申请日：2011-09-21
申请人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
发明人： Hirofumi Morise , Shiho Nakamura , Tsuyoshi Kondo , Yoshinari Kurosaki
IPC分类号： H01F7/02 , H01L29/82 , G11C11/15
CPC分类号： H01F10/329 , G01R33/093 , G01R33/1284 , G11C11/161 , H01F10/3295 , H01L43/08 , H03B15/006
摘要： According to one embodiment, a magnetic oscillation element includes a first electrode/a second magnetic layer/a nonmagnetic spacer layer/a first magnetic layer/a second electrode, stacked in this order. The first magnetic layer has variable magnetization direction. The second magnetic layer has fixed magnetization direction. A thickness of the first magnetic layer in a direction connecting the first and second electrodes is greater than 2 times a spin penetration depth of the first magnetic layer. The thickness of the first magnetic layer is less than a maximum width of the second electrode. The first magnetic layer has edge portion provided outside the first surface when viewed along the direction. A width of the edge portion in a direction perpendicular to a tangent of an edge of the second electrode is not less than an exchange length of the first magnetic layer.
摘要翻译：根据一个实施例，磁振荡元件包括依次堆叠的第一电极/第二磁性层/非磁性间隔层/第一磁性层/第二电极。第一磁性层具有可变的磁化方向。第二磁性层具有固定的磁化方向。连接第一和第二电极的方向上的第一磁性层的厚度大于第一磁性层的自旋穿透深度的2倍。第一磁性层的厚度小于第二电极的最大宽度。当沿该方向观察时，第一磁性层具有设置在第一表面之外的边缘部分。边缘部分在与第二电极的边缘的切线垂直的方向上的宽度不小于第一磁性层的交换长度。

66. 发明授权

US08476724B2 Spin wave device 失效
标题翻译：自旋波装置
公开(公告)号：US08476724B2
公开(公告)日：2013-07-02
申请号：US13229966
申请日：2011-09-12
申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
发明人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
IPC分类号： H01L29/82 , G11B5/127 , G11C11/22 , H01L21/00
CPC分类号： H01L43/08 , H01F10/3268 , H01F10/3286
摘要： A spin wave device comprises a metal layer, a pinned layer, a nonmagnetic layer, a free layer, an antiferromagnetic layer, a first electrode, a first insulator layer, and a second electrode. The pinned layer has a magnetization whose direction is fixed. The free layer has a magnetization whose direction is variable.
摘要翻译：自旋波装置包括金属层，钉扎层，非磁性层，自由层，反铁磁层，第一电极，第一绝缘体层和第二电极。钉扎层具有方向固定的磁化。自由层具有方向可变的磁化。

67. 发明申请

US20130083595A1 MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF 有权
标题翻译：磁记忆及其制造方法
公开(公告)号：US20130083595A1
公开(公告)日：2013-04-04
申请号：US13425471
申请日：2012-03-21
申请人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Junichi Akiyama
发明人： Shiho Nakamura , Tsuyoshi Kondo , Hirofumi Morise , Junichi Akiyama
IPC分类号： G11C11/14 , H01L21/8246
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1675
摘要： A magnetic memory includes a first magnetic line, an electrode, a write-in portion, a second magnetic line, and a spin-wave generator. The first magnetic line has a plurality of magnetic domains and domain walls, the domain wall separating the magnetic domain. The electrode is provided to both ends of the first magnetic line. The write-in portion is provided adjacent to the first magnetic line. The second magnetic line is provided so that the second magnetic line intersects with the first magnetic line. The spin-wave generator provided to one end of the second magnetic line. The spin-wave detector provided to the other end of the second magnetic line.
摘要翻译：磁存储器包括第一磁线，电极，写入部分，第二磁线和自旋波发生器。第一磁线具有多个磁畴和畴壁，畴壁分离磁畴。电极设置在第一磁力线的两端。写入部分设置成与第一磁线相邻。第二磁线被设置成使得第二磁线与第一磁线相交。提供给第二磁线的一端的自旋波发生器。旋转波检测器设置在第二磁线的另一端。

68. 发明申请

US20120124120A1 ADDER 失效
公开(公告)号：US20120124120A1
公开(公告)日：2012-05-17
申请号：US13349871
申请日：2012-01-13
申请人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
发明人： Hirofumi Morise , Shiho Nakamura , Daisuke Saida , Tsuyoshi Kondo
IPC分类号： G06F7/50
CPC分类号： G06F7/388
摘要： According to an embodiment, an adder includes first and second wave computing units and a threshold wave computing unit. Each of the first and second wave computing units includes a pair of first input sections, a first wave transmission medium having a continuous film including a magnetic body connected to the first input sections, and a first wave detector outputting a result of computation by spin waves induced in the first wave transmission medium by the signals corresponding to the two bit values. The threshold wave computing unit includes a plurality of third input sections, a third wave transmission medium having a continuous film including a magnetic body connected to the third input sections, and a third wave detector a result of computation by spin waves induced in the third wave transmission medium.
摘要翻译：根据实施例，加法器包括第一和第二波计算单元和阈值波计算单元。第一和第二波形计算单元中的每一个包括一对第一输入部分，具有包括连接到第一输入部分的磁体的连续膜的第一波传播介质和输出通过自旋波的计算结果的第一波检测器在第一波传输介质中通过对应于两位值的信号感应。阈值波计算单元包括多个第三输入部分，具有包括连接到第三输入部分的磁体的连续胶片的第三波传播介质，以及第三波检测器，由第三波中感应的自旋波的计算结果传输介质。

69. 发明授权

US08049998B2 Magnetoresistance effect device and method for manufacturing same, magnetic memory, magnetic head, and magnetic recording apparatus 有权
标题翻译：磁阻效应器件及其制造方法，磁存储器，磁头和磁记录装置
公开(公告)号：US08049998B2
公开(公告)日：2011-11-01
申请号：US12073171
申请日：2008-02-29
申请人： Yuichi Ohsawa , Shiho Nakamura
发明人： Yuichi Ohsawa , Shiho Nakamura
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11C11/16 , H01L27/224 , H01L27/226 , H01L43/08 , Y10T428/1121 , Y10T428/12271
摘要： A magnetoresistance effect device includes: an insulator layer; a first and second ferromagnetic layer laminated to sandwich the insulator layer; a magnetic bias layer laminated with the second ferromagnetic layer; and a connecting section formed discontinuously on a side face of the insulator layer. The connecting section is not interposed between the second ferromagnetic layer and the magnetic bias layer. The connecting section is made of a ferromagnetic material, and electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer. A method for manufacturing a magnetoresistance effect device includes: laminating a first and second ferromagnetic layer to sandwich an insulator layer, and laminating a magnetic bias layer with the second ferromagnetic layer; and forming a connecting section for electrically connecting between the first ferromagnetic layer and the second ferromagnetic layer by discontinuously forming a ferromagnetic material on a side face of the insulator layer.
摘要翻译：磁阻效应器件包括：绝缘体层; 层叠以夹持绝缘体层的第一和第二铁磁层; 层叠有所述第二铁磁层的磁偏置层; 以及在绝缘体层的侧面上不连续地形成的连接部。连接部不夹在第二铁磁层和磁偏置层之间。连接部分由铁磁材料制成，并且在第一铁磁层和第二铁磁层之间电连接。一种制造磁阻效应器件的方法包括：层叠第一和第二铁磁层以夹住绝缘体层，并将磁偏置层与第二铁磁层层叠; 以及形成用于通过在绝缘体层的侧面上不连续地形成铁磁材料来在第一铁磁层和第二铁磁层之间电连接的连接部分。

70. 发明申请

US20100225312A1 Signal processing device using magnetic film and signal processing method 有权
标题翻译：信号处理装置采用磁膜和信号处理方法
公开(公告)号：US20100225312A1
公开(公告)日：2010-09-09
申请号：US12659275
申请日：2010-03-02
申请人： Shiho Nakamura , Hirofumi Morise
发明人： Shiho Nakamura , Hirofumi Morise
IPC分类号： G01R33/28
CPC分类号： H01L43/08 , H03K19/18
摘要： A signal processing device includes a continuous film, a plurality of spin wave generators, and at least one signal detector. The continuous film includes at least one magnetic layer. The plurality of spin wave generators are provided on the continuous film in such a manner as to be in direct contact with the continuous film or be in contact with the continuous film while having an insulation layer interposed therebetween, and each has a contact surface with the continuous film in a dot shape and generates a spin wave in a region of the magnetic layer of the continuous film by receiving an input signal, the region being immediately under the contact surface. The signal detector is provided on the continuous film and detects, as an electrical signal, the spin waves generated by the spin wave generators and propagating through the continuous film.
摘要翻译：信号处理装置包括连续膜，多个自旋波发生器和至少一个信号检测器。连续膜包括至少一个磁性层。多个自旋波发生器以与连续膜直接接触的方式设置在连续膜上，或者与连续膜接触，同时具有绝缘层，并且每个具有与该连续膜的接触表面连续的薄膜，并且通过接收输入信号而在连续薄膜的磁性层的区域中产生自旋波，该区域紧邻接触表面。信号检测器设置在连续膜上，并且作为电信号检测由自旋波发生器产生的自旋波并通过连续膜传播。

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