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61. 发明授权

US5157471A Semiconductor non-volatile memory device 失效
标题翻译：半导体非易失性存储器件
公开(公告)号：US5157471A
公开(公告)日：1992-10-20
申请号：US353331
申请日：1989-05-16
申请人： Makoto Kojima , Takashi Takata
发明人： Makoto Kojima , Takashi Takata
IPC分类号： H01L21/8247 , G11C16/04 , G11C16/10 , G11C16/14 , G11C16/26 , G11C17/12 , H01L21/339 , H01L27/115 , H01L29/762 , H01L29/788 , H01L29/792
CPC分类号： G11C16/10 , G11C16/0466 , G11C16/14 , G11C16/26 , G11C17/123 , H01L29/792
摘要： A semiconductor non-volatile memory device, has plural data storage parts which are connected in series between the source region and drain region. In such a constitution, when integrating the semiconductors, the relative area occupied by the selection gate, separation gate, source region and drain region of the area of the data storage parts may be drastically reduced, and the degree of integration of the semiconductor non-volatile memory device can be dramatically enhanced. The device also allows for setting the semiconductor substrate in a depletion state by sequentially varying the gate potential of the plural data storage parts and transferring the electric charges sequentially. By this transferring of electric charges, data write errors may be prevented.

62. 发明授权

US4958912A Image forming apparatus 失效
公开(公告)号：US4958912A
公开(公告)日：1990-09-25
申请号：US215791
申请日：1988-07-06
申请人： Yutaka Inaba , Hideyuki Kawagishi , Makoto Kojima , Shuzo Kaneko
发明人： Yutaka Inaba , Hideyuki Kawagishi , Makoto Kojima , Shuzo Kaneko
IPC分类号： G06K15/12 , H04N1/195 , H04N1/40
CPC分类号： H04N1/1951 , G06K15/1252 , H04N1/19505 , H04N1/19547 , H04N1/40031
摘要： An image forming apparatus includes a light source; an optical shutter unit comprising a pair of parallel substrates respectively having a plurality of scanning electrodes and a plurality of data electrodes disposed to intersect with each other to form a matrix electrode structure on their opposite surfaces, and a ferroelectric liquid crystal disposed between the pair of substrates so as to form a microshutter at each intersection of the scanning electrodes and data electrodes; an optical system for forming an image at a desired position with light transmitted through the optical shutter unit; a photosensitive member as a medium for recording the thus formed image; a scanning side drive circuit for applying a scanning voltage signal to the plurality of scanning electrodes so as to sequentially select at least one scanning electrode in a prescribed cycle; and a data side drive unit for applying data voltage signals to the plurality of data electrodes in synchronism with said scanning voltage signal. Image data are transferred on the optical shutter unit corresponding to the movement of the photosensitive member so as to move an image formed thereby on the photosensitive member while keeping the relative position of the image with respect to the photosensitive member.

63. 发明授权

US4839787A Integrated high voltage generating system 失效
标题翻译：集成高压发电系统
公开(公告)号：US4839787A
公开(公告)日：1989-06-13
申请号：US197448
申请日：1988-05-20
申请人： Makoto Kojima , Hirozumi Misaki , Yasuyuki Okada
发明人： Makoto Kojima , Hirozumi Misaki , Yasuyuki Okada
IPC分类号： H01L21/8234 , H01L21/822 , H01L27/04 , H01L27/088 , H02M3/07
CPC分类号： H02M3/073 , H02M2001/009
摘要： This invention relates to an integrated high voltage generating system provided with a charge pump for raising the input power supply voltage sequentially while transferring the electric charges of the capacitors on a stage by stage basis, by serially connecting unit circuits composed of diode elements and capacitors, and supplying clock signals of mutually opposite phases to adjacent capacitors. Source and drain electrodes of a MOS transistor are connected between the first power supply output terminal and a second power supply output terminal, and the gate electrode of this MOS transistor is connected to the input end of any one of the unit circuits of the charge pump, wherein the voltage of the first power supply output terminal is stepped down depending on the voltage applied to the gate electrode of the MOS transistor, and is delivered to the second power supply output terminal. In this way, since the voltage is not stepped down using a dividing circuit, a potential between input power supply voltage and the first input power supply voltage can be obtained from the second power supply output terminal, without consuming unnecessary current and without causing the chip area to be increased.

64. 发明授权

US09234684B2 Refrigerant passage change-over valve and air conditioner using the same 有权
标题翻译：制冷剂通道换向阀及使用其的空调器
公开(公告)号：US09234684B2
公开(公告)日：2016-01-12
申请号：US14129843
申请日：2012-06-20
申请人： Makoto Kojima , Noriyuki Okuda , Takayuki Setoguchi
发明人： Makoto Kojima , Noriyuki Okuda , Takayuki Setoguchi
IPC分类号： F25B41/04 , F16K11/074 , F16K11/16
CPC分类号： F25B41/04 , F16K11/0746 , F16K11/166 , F25B41/046 , Y10T137/86485
摘要： A valve case (11) includes a plurality of ports (P1, P2, P3, . . . ). A valve body (50) rotates in the valve case (11) and slide on openings of predetermined ones of the ports (P1, P2, P3, . . . ) to switch a communication state among the ports (P1, P2, P3, . . . ). A motor (31) rotates the valve body (50). A controller (500) controls a rotation speed (ω) of the motor (31) in accordance with a differential pressure (ΔP) between internal and external pressures of the valve body (50).
摘要翻译：阀壳（11）包括多个端口（P1，P2，P3 ...）。阀体（50）在阀壳体（11）中旋转并在预定端口（P1，P2，P3 ...）的开口上滑动，以切换端口（P1，P2，P3， ...）电动机（31）使阀体（50）旋转。控制器（500）根据阀体（50）的内压和外压之间的压差（＆Dgr; P）控制马达31的转速ω。

65. 发明授权

US07728386B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07728386B2
公开(公告)日：2010-06-01
申请号：US11270598
申请日：2005-11-10
申请人： Makoto Kojima
发明人： Makoto Kojima
IPC分类号： H01L29/94
CPC分类号： H01L29/7835 , H01L21/823807 , H01L21/823814 , H01L27/0727 , H01L27/092 , H01L29/0847 , H01L29/086 , H01L29/66659 , H03K17/6872 , H03K19/0948
摘要： The invention provides a CMOS integrated circuit capable of carrying out an operation at a comparatively high supply voltage, comprising a first MOS type transistor having a drain profile to come in contact with a gate through a low concentration region having an impurity concentration which is equal to or lower than a predetermined concentration at a drain end, and a second MOS type transistor and transfer gate having the same polarity which is connected to a gate of the first MOS type transistor, wherein a gate voltage is applied to the gate of the first MOS type transistor through the second MOS type transistor and transfer gate to which a predetermined potential (a shielding voltage) is applied.
摘要翻译：本发明提供一种能够在较高电源电压下进行工作的CMOS集成电路，包括：具有漏极分布的第一MOS型晶体管，其通过具有等于或等于的杂质浓度的低浓度区域与栅极接触或低于漏极端的预定浓度，以及连接到第一MOS型晶体管的栅极的具有相同极性的第二MOS型晶体管和传输栅极，其中栅极电压施加到第一MOS晶体管的栅极通过施加了预定电位（屏蔽电压）的第二MOS型晶体管和传输栅极。

66. 发明授权

US07710780B2 Semiconductor non-volatile memory 有权
标题翻译：半导体非易失性存储器
公开(公告)号：US07710780B2
公开(公告)日：2010-05-04
申请号：US12268891
申请日：2008-11-11
申请人： Makoto Kojima
发明人： Makoto Kojima
IPC分类号： G11C16/04
CPC分类号： G11C16/0491 , G11C16/26
摘要： A semiconductor non-volatile memory, wherein a memory cell can be read accurately without having to discharge bit lines before the read operation. When reading a memory cell, the first bit line connected to the drain thereof is connected to the voltage source to receive a predetermined voltage, and the second bit line connected to the source thereof is connected to the sense amplifier. In this process, the third bit line in the vicinity of the second bit line is connected to the ground power supply. Thus, since the third bit line in the vicinity of the second bit line being sensed is forcibly set to the ground level, no charge flows in therefrom, thus preventing a current flowing into the second bit line.
摘要翻译：一种半导体非易失性存储器，其中可以准确地读取存储单元，而不必在读取操作之前对位线进行放电。当读取存储单元时，连接到其漏极的第一位线连接到电压源以接收预定电压，并且连接到其源极的第二位线连接到读出放大器。在该处理中，第二位线附近的第三位线与地电源连接。因此，由于被感测的第二位线附近的第三位线被强制设定为接地电平，因此不会有电荷流入，从而防止电流流入第二位线。

67. 发明授权

US07632536B2 Method for producing electroconductive pattern, and method for producing electronic device, electron emitting device and image forming apparatus 失效
标题翻译：导电图案的制造方法，电子装置的制造方法，电子发射装置和图像形成装置
公开(公告)号：US07632536B2
公开(公告)日：2009-12-15
申请号：US11214830
申请日：2005-08-31
申请人： Tsuyoshi Furuse , Shosei Mori , Masahiro Terada , Tsuyoshi Ibe , Makoto Kojima
发明人： Tsuyoshi Furuse , Shosei Mori , Masahiro Terada , Tsuyoshi Ibe , Makoto Kojima
IPC分类号： B05D5/12
CPC分类号： H01J9/027 , H01J31/127 , H01J2201/3165 , H05K3/105 , H05K3/386 , H05K2203/121
摘要： A method for producing a pattern of an electroconductive member, comprises: a step of forming on a substrate surface a resin film containing acid group; a step of incorporating into the resin film a liquid containing a metal complex salt and having a pH value of 5 to 7; and a step of baking the resin film to form the electroconductive member from a metal component incorporated into the resin film, thereby improving uniformity and speed of an adsorbing of the metal component into the resin, and providing uniform characteristics of the electroconductive pattern.
摘要翻译：一种用于制造导电构件的图案的方法，包括：在基板表面上形成含有酸基的树脂膜的步骤; 将含有金属络盐的pH值为5〜7的液体加入树脂膜的工序; 以及从引入到树脂膜中的金属成分烘烤树脂膜以形成导电构件的步骤，从而提高金属成分吸附到树脂中的均匀性和速度，并提供均匀的导电图案特性。

68. 发明授权

US07616488B2 Current or voltage measurement circuit, sense circuit, semiconductor non-volatile memory, and differential amplifier 有权
标题翻译：电流或电压测量电路，感测电路，半导体非易失性存储器和差分放大器
公开(公告)号：US07616488B2
公开(公告)日：2009-11-10
申请号：US12064712
申请日：2006-07-10
申请人： Makoto Kojima , Takafumi Maruyama
发明人： Makoto Kojima , Takafumi Maruyama
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C7/062
摘要： In a wire pair 120 including a first signal line 120a and a second signal line 120b, the first signal line 120a and the second signal line 120b are laid out so that they have substantially the same stray capacitance. Two output terminals of a measured device 1000 and an input terminal of a differential amplifier 110 are connected together by the wire pair 120. Thus, noise included in the first signal line 120a and noise included in the second signal line 120b become common-mode noise, which are canceled out by the differential amplification of the differential amplifier 110.
摘要翻译：在包括第一信号线120a和第二信号线120b的线对120中，布置第一信号线120a和第二信号线120b，使得它们具有基本上相同的杂散电容。测量装置1000的两个输出端和差分放大器110的输入端通过线对120连接在一起。因此，包括在第一信号线120a中的噪声和包括在第二信号线120b中的噪声成为共模噪声，其通过差分放大器110的差分放大而被抵消。

69. 发明授权

US07442406B2 Electron-emitting device, electron source substrate, electron beam apparatus, display apparatus, and manufacturing method thereof 失效
标题翻译：电子发射器件，电子源衬底，电子束装置，显示装置及其制造方法
公开(公告)号：US07442406B2
公开(公告)日：2008-10-28
申请号：US11260395
申请日：2005-10-28
申请人： Masahiro Terada , Yasuko Tomida , Makoto Kojima , Tsuyoshi Furuse , Taku Shimoda
发明人： Masahiro Terada , Yasuko Tomida , Makoto Kojima , Tsuyoshi Furuse , Taku Shimoda
IPC分类号： B05D5/12 , B05D3/02 , B05D1/02
CPC分类号： H01J1/316 , H01J9/027
摘要： An electron-emitting device comprises a pair of opposing electrodes formed on a substrate, an electroconductive film having a fissure arranged between the pair of electrodes, and at least a film having a gap and containing carbon as a main ingredient, arranged at an end portion of the electroconductive film facing the fissure.The fissure is a region of 95% or more of a length in the fissure direction, has a width of from 60 nm or more to 800 nm or less, and has a difference of 300 nm or less between a maximum value and a minimum value of the width, thereby providing high withstanding voltage without forming branched fissure.
摘要翻译：一种电子发射器件包括一对形成于基片上的相对电极，一对导电膜，该导电膜具有布置在该对电极之间的裂缝，至少具有间隙并含有碳作为主要成分的膜，的导电膜面对裂缝。裂缝是裂缝方向长度为95％以上的区域，宽度为60nm以上至800nm以下，并且在最大值和最小值之间具有300nm以下的差的宽度，从而提供高耐压而不形成分支裂隙。

70. 发明申请

US20080168783A1 Air Conditioner 有权
标题翻译：冷气机
公开(公告)号：US20080168783A1
公开(公告)日：2008-07-17
申请号：US11885059
申请日：2006-02-07
申请人： Makoto Kojima , Shinichi Kasahara
发明人： Makoto Kojima , Shinichi Kasahara
IPC分类号： F25D21/06
CPC分类号： F25B13/00 , F24F11/30 , F24F11/36 , F24F11/42 , F24F11/43 , F25B2313/02741 , F25B2313/0314 , F25B2500/222 , F25B2600/2513 , F25B2700/1931 , F25B2700/1933 , F25D21/006
摘要： Based on a result of detection taken by the high-low pressure difference detection means (93, 97) for detecting a difference between a high and a low pressure of a refrigeration cycle, an estimate of whether there is leakage of refrigerant in an expansion valve (52) is made. Based on the result detected by the high-low pressure difference detection means (93, 97), a control means (81) sets a reference temperature (T3) to a value corresponding to the degree of refrigerant leakage in the expansion valve (52).
摘要翻译：基于用于检测制冷循环的高压和低压之间的差异的高低压差检测装置（93,97）的检测结果，估计膨胀阀中的制冷剂是否泄漏（52）。基于由高低压差检测装置（93,97）检测到的结果，控制装置（81）将基准温度（T 3）设定为与膨胀阀（52）中的制冷剂泄漏程度相对应的值）。

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