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61. 发明申请

US20070207263A1 Method for manufacturing magnetic recording medium 有权
标题翻译：磁记录介质的制造方法
公开(公告)号：US20070207263A1
公开(公告)日：2007-09-06
申请号：US11705037
申请日：2007-02-12
申请人： Hiroyuki Hieda , Yoshiyuki Kamata , Satoshi Shirotori
发明人： Hiroyuki Hieda , Yoshiyuki Kamata , Satoshi Shirotori
IPC分类号： B05D5/12 , B05D3/12
CPC分类号： G11B5/855 , G11B5/85
摘要： It is made possible to manufacturing a magnetic recording medium capable of high-density recording at low cost. A method for manufacturing a magnetic recording medium, includes: forming a magnetic film on a substrate; and forming a pattern transfer film, into which a concavo-convex pattern of a magnetic recording medium is to be transferred by imprinting, by vapor-depositing a material for forming the pattern transfer film onto the magnetic film while heating the material at a temperature of 100° C. to 400° C. in a vacuum of 1×10−3 Torr or less.
摘要翻译：能够以低成本制造能够高密度记录的磁记录介质。一种制造磁记录介质的方法，包括：在基板上形成磁膜; 并且通过在形成图案转印膜的材料上气相沉积到磁性膜上形成图案转印膜，通过压印将磁记录介质的凹凸图案转印到该图案转印膜中，同时在在1×10 -3乇或更低的真空中，100℃至400℃。

62. 发明授权

US08778162B2 Stamper and method of manufacturing the same 失效
标题翻译：压模及其制造方法
公开(公告)号：US08778162B2
公开(公告)日：2014-07-15
申请号：US13077537
申请日：2011-03-31
申请人： Masatoshi Sakurai , Takuya Shimada , Shinobu Sugimura , Satoshi Shirotori
发明人： Masatoshi Sakurai , Takuya Shimada , Shinobu Sugimura , Satoshi Shirotori
IPC分类号： C25D1/00 , C25D1/20
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/743 , G11B5/855 , G11B5/858
摘要： According to one embodiment, a stamper manufacturing method comprises electroless plating by using a master includes a substrate, a conductive underlayer formed on the substrate and having catalytic activity, projecting patterns having no catalytic activity and partially formed on a surface of the conductive underlayer having catalytic activity, and regions in which the conductive underlayer having catalytic activity is exposed between the projecting patterns to deposit selectively an amorphous conductive layer between the projecting patterns and in the regions in which the conductive underlayer is exposed, and forming stamper projections, electroplating on the stamper projections includes the projecting patterns and the amorphous conductive layer by using the amorphous conductive layer and the conductive underlayer as electrodes to form a stamper main body made of a crystalline metal, and releasing a stamper includes the stamper projections and the stamper main body from the master.
摘要翻译：根据一个实施例，压模制造方法包括使用主体的无电镀，其包括基板，形成在基板上的具有催化活性的导电底层，具有催化活性的突出图案，并部分地形成在具有催化作用的导电底层的表面上活性以及其中具有催化活性的导电底层在突出图案之间暴露的区域，以选择性地沉积在突出图案之间的非晶导体层和导电底层暴露的区域中，并且形成压模突起，在压模上电镀突起包括通过使用非晶导体层和导电底层作为电极形成由结晶金属制成的压模主体的突出图案和非晶导体层，并且释放压模包括压模主体和压模主体。

63. 发明授权

US08929031B2 Spin torque oscillator, method of manufacturing the same, magnetic recording head, magnetic head assembly, and magnetic recording apparatus 有权
标题翻译：旋转扭矩振荡器，其制造方法，磁记录头，磁头组件和磁记录装置
公开(公告)号：US08929031B2
公开(公告)日：2015-01-06
申请号：US13291777
申请日：2011-11-08
申请人： Akihiko Takeo , Satoshi Shirotori , Kenichiro Yamada , Katsuhiko Koui
发明人： Akihiko Takeo , Satoshi Shirotori , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： G11B5/127 , G11B5/31 , H01F10/32 , H01F41/30 , H01L43/08 , G11B5/00
CPC分类号： G11B5/3163 , B82Y40/00 , G11B5/1278 , G11B5/314 , G11B2005/0024 , H01F10/325 , H01F10/3286 , H01F10/329 , H01F41/302 , H01F41/308 , H01L43/08 , Y10T29/4902 , Y10T29/49032 , Y10T428/1186
摘要： According to one embodiment, there is provided a spin torque oscillator including an oscillation layer formed of a magnetic material, a spin injection layer formed of a magnetic material and configured to inject a spin into the oscillation layer, and a current confinement layer including an insulating portion formed of an oxide or a nitride and a conductive portion formed of a nonmagnetic metal and penetrating the insulating portion in a direction of stacking. The conductive portion of the current confinement layer is positioned near a central portion of a plane of a device region including the oscillation layer and the spin injection layer.
摘要翻译：根据一个实施例，提供了一种自旋扭矩振荡器，其包括由磁性材料形成的振荡层，由磁性材料形成的自旋注入层，并被配置为向振荡层注入自旋;以及电流限制层，其包括绝缘体由氧化物或氮化物形成的部分和由非磁性金属形成的导电部分，并且在堆叠方向上穿透绝缘部分。电流限制层的导电部分位于包括振荡层和自旋注入层的器件区域平面的中心部分附近。

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