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61. 发明授权

US08798859B2 Suspension control apparatus 有权
标题翻译：悬架控制装置
公开(公告)号：US08798859B2
公开(公告)日：2014-08-05
申请号：US13996120
申请日：2012-01-31
申请人： Toru Uchino , Ryusuke Hirao , Yohei Katayama , Hiroyuki Yabe , Hiroki Ohara
发明人： Toru Uchino , Ryusuke Hirao , Yohei Katayama , Hiroyuki Yabe , Hiroki Ohara
IPC分类号： G06F19/00
CPC分类号： B60G17/017 , B60G17/018 , B60G17/06 , B60G17/08 , B60G2500/10 , F16F9/465
摘要： [Object]The present invention provides a suspension control apparatus that allows miniaturization of a solenoid valve.[Solution]When a controller is started up by a power source controller (a power source unit), the controller switches a control current from 0 ampere to a maximum current value I6 at the same time as the startup. After that, the control shifts to normal control. As a result, even if a hysteresis of a damping force characteristic is large relative to the control current, it is possible to promptly move a solenoid valve to a position to be used in the normal control.
摘要翻译：本发明提供一种能够使电磁阀小型化的悬架控制装置。 [解决方案]当控制器由电源控制器（电源单元）启动时，控制器在启动的同时将控制电流从0安培切换到最大电流值I6。之后，控制转移到正常的控制。结果，即使阻尼力特性的滞后相对于控制电流大，也可以迅速地将电磁阀移动到正常控制中使用的位置。

62. 发明授权

US08592251B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08592251B2
公开(公告)日：2013-11-26
申请号：US13467408
申请日：2012-05-09
申请人： Miyuki Hosoba , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
发明人： Miyuki Hosoba , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , G02F1/133528 , G02F1/1339 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F1/167 , G02F2001/133302 , G02F2001/133531 , G02F2201/121 , G02F2201/123 , G09G3/3677 , G09G2310/0286 , G09G2310/08 , H01L21/02107 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02672 , H01L21/324 , H01L21/477 , H01L21/67115 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
摘要翻译：目的在于提供一种使用氧化物半导体的具有稳定电特性的半导体器件。在氮气或惰性气体气氛（例如氩气或氦气）或减压下对氧化物半导体层进行脱水或脱氢处理的热处理，并进行用于在氧气和氮气气氛或空气（露点优选低于或等于-40℃，更优选低于或等于-50℃）气氛。因此，氧化物半导体层被高度纯化，从而形成i型氧化物半导体层。制造包括具有氧化物半导体层的薄膜晶体管的半导体器件。

63. 发明申请

US20130275003A1 SUSPENSION CONTROL APPARATUS 有权
标题翻译：悬挂控制装置
公开(公告)号：US20130275003A1
公开(公告)日：2013-10-17
申请号：US13996120
申请日：2012-01-31
申请人： Toru Uchino , Ryusuke Hirao , Yohei Katayama , Hiroyuki Yabe , Hiroki Ohara
发明人： Toru Uchino , Ryusuke Hirao , Yohei Katayama , Hiroyuki Yabe , Hiroki Ohara
IPC分类号： B60G17/06
CPC分类号： B60G17/017 , B60G17/018 , B60G17/06 , B60G17/08 , B60G2500/10 , F16F9/465
摘要： [Object]The present invention provides a suspension control apparatus that allows miniaturization of a solenoid valve.[Solution]When a controller is started up by a power source controller (a power source unit), the controller switches a control current from 0 ampere to a maximum current value I6 at the same time as the startup. After that, the control shifts to normal control. As a result, even if a hysteresis of a damping force characteristic is large relative to the control current, it is possible to promptly move a solenoid valve to a position to be used in the normal control.
摘要翻译：本发明提供一种能够使电磁阀小型化的悬架控制装置。 [解决方案]当控制器由电源控制器（电源单元）启动时，控制器在启动的同时将控制电流从0安培切换到最大电流值I6。之后，控制转移到正常的控制。结果，即使阻尼力特性的滞后相对于控制电流大，也可以迅速地将电磁阀移动到正常控制中使用的位置。

64. 发明授权

US08557641B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08557641B2
公开(公告)日：2013-10-15
申请号：US12826000
申请日：2010-06-29
申请人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
发明人： Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/84 , H01L29/10 , H01L29/12
CPC分类号： H01L21/02664 , H01L21/02565 , H01L27/1225 , H01L29/66765 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a high reliable semiconductor device including a thin film transistor having stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (which is for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. Besides impurities such as moisture existing in the oxide semiconductor film, heat treatment causes reduction of impurities such as moisture existing in the gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor film and are in contact with the oxide semiconductor film.
摘要翻译：目的是提供一种包括具有稳定电特性的薄膜晶体管的高可靠性半导体器件。在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（其用于脱水或脱氢），以提高纯度氧化物半导体膜，并且减少诸如水分的杂质。除了存在于氧化物半导体膜中的水分等杂质外，热处理会导致存在于栅极绝缘层中的杂质，氧化物半导体膜和氧化物半导体膜之间的氧化物半导体膜与膜之间的界面中的杂质的减少，与氧化物半导体膜接触。

65. 发明授权

US08546180B2 Method for manufacturing oxide semiconductor device 有权
标题翻译：氧化物半导体器件的制造方法
公开(公告)号：US08546180B2
公开(公告)日：2013-10-01
申请号：US12846534
申请日：2010-07-29
申请人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Hiroki Ohara , Toshinari Sasaki , Kosei Noda , Hideaki Kuwabara
IPC分类号： H01L21/00
CPC分类号： H01L27/1225 , G02F1/133345 , G02F1/1337 , G02F1/134309 , G02F1/136227 , G02F1/136277 , G02F1/1368 , H01L27/1214 , H01L27/124 , H01L27/1248 , H01L29/24 , H01L29/517 , H01L29/78609 , H01L29/7869
摘要： An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
摘要翻译：目的在于提供一种半导体器件，其具有可以充分降低布线之间的寄生电容的结构。用作沟道保护层的氧化物绝缘层形成在与栅电极层重叠的氧化物半导体层的一部分上。在与氧化物绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的周边部分的氧化物绝缘层。设置覆盖氧化物半导体层的周边部分的氧化物绝缘层以增加栅极电极层与形成在栅电极层的上方或周围的布线层之间的距离，从而降低寄生电容。

66. 发明授权

US08518740B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08518740B2
公开(公告)日：2013-08-27
申请号：US12828468
申请日：2010-07-01
申请人： Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara
发明人： Shunpei Yamazaki , Toshinari Sasaki , Junichiro Sakata , Hiroki Ohara
IPC分类号： H01L21/00 , H01L21/16
CPC分类号： H01L29/7869 , H01L21/67109 , H01L21/67115 , H01L27/1225
摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, impurities such as moisture existing in the gate insulating layer are reduced before formation of the oxide semiconductor film, and then heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor film and reduce impurities such as moisture. After that, slow cooling is performed in an oxygen atmosphere. Besides impurities such as moisture existing in the gate insulating layer and the oxide semiconductor film, impurities such as moisture existing at interfaces between the oxide semiconductor film and upper and lower films provided in contact therewith are reduced.
摘要翻译：本发明的目的是提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。在制造包括薄膜晶体管的半导体器件的方法中，其中氧化物半导体膜用于包括沟道形成区域的半导体层，在形成氧化物半导体膜之前，存在于栅极绝缘层中的诸如水分的杂质减少，然后进行热处理（脱水或脱氢的热处理），以提高氧化物半导体膜的纯度并减少诸如水分的杂质。之后，在氧气氛中进行缓慢冷却。除了存在于栅极绝缘层和氧化物半导体膜中的杂质等杂质以外，氧化物半导体膜与与其接触的上下膜之间的界面处存在的诸如水分的杂质减少。

67. 发明授权

US08395153B2 Semiconductor device and manufacturing method the same 有权
公开(公告)号：US08395153B2
公开(公告)日：2013-03-12
申请号：US13596527
申请日：2012-08-28
申请人： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
发明人： Shunpei Yamazaki , Hiroki Ohara , Junichiro Sakata , Toshinari Sasaki , Miyuki Hosoba
IPC分类号： H01L29/786
CPC分类号： H01L27/127 , H01L21/477 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1274 , H01L27/1296 , H01L29/04 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which a semiconductor layer including a channel formation region serves as an oxide semiconductor film, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed after an oxide insulating film serving as a protective film is formed in contact with an oxide semiconductor layer. Then, the impurities such as moisture, which exist not only in a source electrode layer, in a drain electrode layer, in a gate insulating layer, and in the oxide semiconductor layer but also at interfaces between the oxide semiconductor film and upper and lower films which are in contact with the oxide semiconductor layer, are reduced.

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