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61. 发明授权

US06195306B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06195306B1
公开(公告)日：2001-02-27
申请号：US09289660
申请日：1999-04-12
申请人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
发明人： Masashi Horiguchi , Masayuki Nakamura , Sadayuki Ohkuma , Kazuhiko Kajigaya , Yoshinobu Nakagome
IPC分类号： G11C700
CPC分类号： G11C5/063 , G11C5/14 , G11C5/147 , G11C7/1072 , G11C8/12 , G11C11/406 , G11C11/40615 , G11C11/40618 , G11C11/4074 , G11C11/4076 , G11C2207/2227 , G11C2211/4067 , G11C2211/4068
摘要： A semiconductor device has a plurality of memory banks and a plurality of power supply circuits corresponding to the memory banks. Each of the memory banks is independently activated by an activating command. Given an externally supplied voltage, each of the power supply circuits outputs a predetermined internal supply voltage. Each power supply circuit has its output connected to the corresponding memory bank. In response to a command for activating one of the memory banks, the corresponding power supply circuit is activated while the remaining power supply circuits are deactivated.
摘要翻译：半导体器件具有多个存储体和对应于存储体的多个电源电路。每个存储体被激活命令独立地激活。给定外部提供的电压，每个电源电路输出预定的内部电源电压。每个电源电路的输出连接到相应的存储体。响应于用于激活存储体之一的命令，相应的电源电路被激活，而剩余的电源电路被去激活。

62. 发明授权

US06178108B1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US06178108B1
公开(公告)日：2001-01-23
申请号：US09258462
申请日：1999-02-26
申请人： Shinichi Miyatake , Shigekazu Kase , Masayuki Nakamura , Masatoshi Hasegawa , Kazuhiko Kajigaya
发明人： Shinichi Miyatake , Shigekazu Kase , Masayuki Nakamura , Masatoshi Hasegawa , Kazuhiko Kajigaya
IPC分类号： G11C1124
CPC分类号： G11C11/22
摘要： In a semiconductor memory device having a plurality of memory cells in which each memory cell is formed of an address selection MOSFET and an information storing capacitor and the plate voltage consisting of an intermediate potential is supplied to the common electrode of the information storing capacitor, the memory access is enabled by detecting indirect that the plate voltage has reached the predetermined potential near the intermediate potential with the voltage detecting circuit or timer circuit, inhibiting the selecting operation of the word lines or precharging the pair bit lines to the intermediate potential when the plate voltage is lower than the predetermined potential, and then canceling the above inhibit condition after the plate voltage has reached the predetermined potential.
摘要翻译：在具有多个存储单元的半导体存储器件中，其中每个存储单元由地址选择MOSFET和信息存储电容器形成，并且由中间电位构成的板电压被提供给信息存储电容器的公共电极，通过检测间接使用电压检测电路或定时器电路使板电压达到中间电位附近的预定电位来启用存储器访问，当板的电压被抑制时，字线的选择操作或预先充电到中间电位电压低于预定电位，然后在板电压达到预定电位后取消上述禁止条件。

63. 发明授权

US06163123A Method for controlling electric actuator and apparatus for the same 失效
标题翻译：用于控制电致动器及其装置的方法
公开(公告)号：US06163123A
公开(公告)日：2000-12-19
申请号：US167721
申请日：1998-10-07
申请人： Shigekazu Nagai , Masayuki Nakamura , Kazuyuki Oguma
发明人： Shigekazu Nagai , Masayuki Nakamura , Kazuyuki Oguma
IPC分类号： F16H25/20 , G05B19/40 , H02K7/06
CPC分类号： G05B19/40 , F16H25/20 , G05B2219/42177 , G05B2219/42178 , G05B2219/42193 , G05B2219/42215 , H02K7/06
摘要： Rotary motion of a motor of an electric actuator is converted into rectilinear motion with a small sliding resistance by the aid of a ball screw and a feed nut. On the other hand, a control apparatus for controlling the electric actuator comprises memory groups composed of memories to indicate displacement positions of a displacement member. The memory groups include a starting point memory. If a controller selects the starting point memory, the control apparatus displaces the displacement member to a starting point position. Therefore, it is unnecessary to provide any dedicated signal line for displacing the displacement member to the starting point position. It is possible to decrease the number of signal lines connected to the control apparatus.
摘要翻译：电动执行器的电机的旋转运动通过滚珠丝杠和进给螺母转换成具有小滑动阻力的直线运动。另一方面，用于控制电致动器的控制装置包括由存储器构成的存储器组，用于指示位移构件的位移位置。存储器组包括起始点存储器。如果控制器选择起点存储器，则控制装置将位移构件移位到起点位置。因此，不需要提供用于将位移构件移位到起点位置的专用信号线。可以减少连接到控制装置的信号线的数量。

64. 发明授权

US6028800A Sense amplifier driver having variable power-supply voltage 失效
标题翻译：具有可变电源电压的感应放大器驱动器
公开(公告)号：US6028800A
公开(公告)日：2000-02-22
申请号：US732777
申请日：1996-10-15
申请人： Takesada Akiba , Goro Kitsukawa , Hiroshi Otori , Masayuki Nakamura , Hideo Sunami , Adin Hyslop
发明人： Takesada Akiba , Goro Kitsukawa , Hiroshi Otori , Masayuki Nakamura , Hideo Sunami , Adin Hyslop
IPC分类号： G11C11/407 , G11C7/06 , G11C11/409 , H03K19/0175 , G11C16/04
CPC分类号： G11C7/065
摘要： An apparatus and method for a logic circuit that advantageously adapts to different operating voltages. In a preferred embodiment, a logic circuit of the present invention is implemented to drive a large capacitive load and includes a first driver, comprising a set of small, low-current drive transistors, a second driver, comprising a set of large, high-speed transistors, and an additional transistor connected between the two drivers. The additional transistor can be selectively enabled to speed up the operation of the logic circuit, and disabled to reduce the peak current of the logic circuit. The additional transistor is enabled by a voltage detection signal, which is active when the operating voltage of the chip is at a low level and inactive when the operating voltage of the chip is at a high level.
摘要翻译：一种用于逻辑电路的装置和方法，其有利地适应于不同的工作电压。在优选实施例中，实现本发明的逻辑电路以驱动大容性负载，并且包括第一驱动器，其包括一组小的，低电流的驱动晶体管，第二驱动器，包括一组大的，高速晶体管和连接在两个驱动器之间的附加晶体管。可以选择性地使能附加晶体管来加速逻辑电路的操作，并且不能减小逻辑电路的峰值电流。附加晶体管由电压检测信号使能，该电压检测信号当芯片的工作电压处于低电平时有效，并且当芯片的工作电压处于高电平时不起作用。

65. 发明授权

US5976281A Eyeglass frame and fabrication method 失效
公开(公告)号：US5976281A
公开(公告)日：1999-11-02
申请号：US609015
申请日：1996-02-29
申请人： Masayuki Nakamura , Mikio Takeuchi
发明人： Masayuki Nakamura , Mikio Takeuchi
摘要： A Ni--Ti superelastic alloy demonstrates superelastic properties at normal temperatures from about 0 and 30.degree. C. The superelastic alloy allows shape alteration when the temperature is in excess of 40.degree. C. The Ni--Ti superelastic alloy is produced by plastic working a composition containing essentially Ni and Ti, and subjecting the composition to heat treatment at a temperature between 600 and 800.degree. C. to impart shape memory. When the Ni--Ti superelastic alloy is used in an eyeglass frame, it allows the shape of the pad arms to be adjusted at temperatures above about 40.degree. C.

66. 发明授权

US5886918A Semiconductor integrated circuit device having synchronous function with a plurality of external clocks 失效
标题翻译：具有与多个外部时钟同步功能的半导体集成电路装置
公开(公告)号：US5886918A
公开(公告)日：1999-03-23
申请号：US123005
申请日：1998-07-27
申请人： Masayuki Nakamura
发明人： Masayuki Nakamura
IPC分类号： G11C11/407 , G11C5/06 , G11C7/00 , G11C7/10 , G11C7/22 , G11C8/00 , G11C11/34 , G11C11/401 , G11C29/00
CPC分类号： G11C7/1072 , G11C29/80 , G11C29/84 , G11C7/22
摘要： The present invention is a method and apparatus for reducing the effects of transmission line impedance on the clock signal in a semiconductor device. In a departure from the prior art, the present invention includes multiple clock inputs, located near the device's synchronous input/output ports, reducing the maximum distance that any single internal clock signal must travel and thereby reducing the amount of delay caused by the effects of transmission line impedance on the internal clock signals. The present invention also includes a read only memory ("ROM") to improve the speed of the device and to provide additional space in the highly congested areas between the column decoder and address ports of the device. The ROM is programmed to decipher row address for information that would be beneficial in a redundant column access.
摘要翻译：本发明是一种降低半导体器件中传输线阻抗对时钟信号的影响的方法和装置。与现有技术不同，本发明包括位于设备同步输入/输出端口附近的多个时钟输入，减少了任何单个内部时钟信号必须行进的最大距离，从而减少了由于传输线阻抗对内部时钟信号的影响。本发明还包括一个只读存储器（“ROM”），用于提高设备的速度并且在列解码器和设备的地址端口之间的高度拥塞的区域中提供额外的空间。 ROM被编程为解密行地址以获得在冗余列访问中有益的信息。

67. 发明授权

US5844853A Memory regulator control method with flexibility for a wide change in supply voltage 失效
标题翻译：内存调节器控制方式具有灵活性，可大幅度改变电源电压
公开(公告)号：US5844853A
公开(公告)日：1998-12-01
申请号：US790610
申请日：1997-01-29
申请人： Goro Kitsukawa , Wah Kit Loh , Takesada Akiba , Masayuki Nakamura , Hiroshi Otori
发明人： Goro Kitsukawa , Wah Kit Loh , Takesada Akiba , Masayuki Nakamura , Hiroshi Otori
IPC分类号： G11C11/413 , G01R31/317 , G05F3/24 , G11C5/14 , G11C11/407 , G11C11/4074 , G11C11/409 , H01L21/8242 , H01L27/108 , G11C7/10
CPC分类号： G01R31/31712 , G11C11/4074 , G11C5/147
摘要： A circuit and method for providing a plurality of voltage regulators whose outputs are constant for ranges of different external voltages are disclosed. The voltage regulators are made to be adaptable to two different ranges of external voltages through use of a master-slice technique. Furthermore, in a first voltage regulator, the supply current capability of the regulator is significantly increased under very low external voltage conditions. In a second voltage regulator, the voltage level on any node of the regulator does not exceed a voltage level that is too high, yet still sinks most of its current from the external power supply. A third voltage regulator is able to charge and discharge its output voltage so that it will maintain at a constant level. Finally, a fourth voltage regulator is optimized to reduce dielectric leakage.
摘要翻译：公开了一种用于提供多个稳压器的电路和方法，其输出对于不同外部电压的范围是恒定的。通过使用主切片技术，电压调节器可以适应两种不同的外部电压范围。此外，在第一电压调节器中，在非常低的外部电压条件下，调节器的电源电流能力显着增加。在第二个稳压器中，调节器任何节点上的电压电平都不会超过太高的电压电平，但仍然从外部电源中吸收大部分电流。第三电压调节器能够对其输出电压进行充电和放电，使其保持在恒定电平。最后，第四个电压调节器被优化以减少电介质泄漏。

68. 发明授权

US5459684A Dynamic RAM, dynamic RAM plate voltage setting method, and information processing system 失效
标题翻译：动态RAM，动态RAM板电压设定方法和信息处理系统
公开(公告)号：US5459684A
公开(公告)日：1995-10-17
申请号：US197768
申请日：1994-02-16
申请人： Masayuki Nakamura , Tetsuro Matsumoto , Kazuyoshi Oshima
发明人： Masayuki Nakamura , Tetsuro Matsumoto , Kazuyoshi Oshima
IPC分类号： G11C11/404 , G11C11/407 , G11C11/4074 , G11C7/00 , G11C11/40
CPC分类号： G11C11/4074
摘要： A dynamic RAM enhanced in integration and storage capacity, a method of setting a plate voltage of the dynamic RAM, and an information processing system reduced in size and enhanced in performance are provided. The plate voltage is set such that a leakage current of an information storage capacitor when a bit line voltage is positive relative to the plate voltage is made substantially equal to a leakage current of the capacitor when the bit line voltage is negative relative to the plate voltage. For this plate voltage setting, a plate voltage generating circuit is provided with an output voltage adjusting capability. A monitoring capacitor is formed on the same semiconductor wafer on which the information storage capacitor is formed. This monitoring capacitor is formed by a same method by which the information storage capacitor is formed, and is made of a same material of which the information storage capacitor is made. The monitoring capacitor is tested in a wafer probing process. Based on a measurement result, the plate voltage is set to an optimum level. The information processing system is constituted with the dynamic RAM as its memory device having the optimum plate voltage.
摘要翻译：提供集成和存储容量增强的动态RAM，设置动态RAM的板电压的方法以及尺寸减小和性能提高的信息处理系统。板电压被设定为当位线电压相对于板电压为正时，信息存储电容器的漏电流基本上等于当位线电压相对于板电压为负时电容器的漏电流。对于该板电压设定，板电压发生电路具有输出电压调整能力。在形成信息存储电容器的同一半导体晶片上形成监视电容器。该监视电容器由形成信息存储电容器的相同方法形成，并且由与信息存储电容器相同的材料制成。监测电容器在晶圆探测过程中进行测试。基于测量结果，将板电压设置为最佳水平。该信息处理系统由动态RAM作为具有最佳板电压的存储器件构成。

69. 发明授权

US5426603A Dynamic RAM and information processing system using the same 失效
标题翻译：动态RAM和信息处理系统使用相同
公开(公告)号：US5426603A
公开(公告)日：1995-06-20
申请号：US186460
申请日：1994-01-25
申请人： Masayuki Nakamura , Takayuki Kawahara , Kazuhiko Kajigaya , Kazuyoshi Oshima , Tsugio Takahashi , Hiroshi Otori , Tetsuro Matsumoto
发明人： Masayuki Nakamura , Takayuki Kawahara , Kazuhiko Kajigaya , Kazuyoshi Oshima , Tsugio Takahashi , Hiroshi Otori , Tetsuro Matsumoto
IPC分类号： G11C11/4091 , G11C11/4097 , G11C11/24
CPC分类号： G11C11/4097 , G11C11/4091
摘要： A dynamic RAM is provided using a sense amplifier compensating for the disparities of characteristics for paired MOSFET's. With this arrangement parasitic capacitance of the bit lines can be increased to be at least 20 times the capacitance of the memory cells. Each bit line is bisected by a switch MOSFET and is disconnected thereby as needed. A plurality of sets of memory arrays are furnished, each including a switch MOSFET for interconnecting common source lines to which the sense amplifier is connected. This permits recycling of the charges of the common source lines.
摘要翻译：使用读出放大器提供动态RAM来补偿成对MOSFET的特性差异。利用这种布置，位线的寄生电容可以增加到存储器单元的电容的至少20倍。每个位线由开关MOSFET二等分，并根据需要断开。提供了多组存储器阵列，每组存储器阵列包括用于互连连接读出放大器的公共源极线的开关MOSFET。这允许回收公共源线的电荷。

70. 发明授权

US5387686A Dye for heat-sensitive transfer record and ink composition for heat-sensitive transfer record 失效
标题翻译：用于热敏转印记录的染料和用于热敏转印记录的油墨组合物
公开(公告)号：US5387686A
公开(公告)日：1995-02-07
申请号：US166061
申请日：1993-12-14
申请人： Tsukasa Ohyama , Yasushi Shimokawa , Yoriaki Matsuzaki , Keisuke Takuma , Isamu Ghoda , Hitoshi Koshida , Ryohei Takiguchi , Hiroshi Eguchi , Komei Kafuku , Masayuki Nakamura
发明人： Tsukasa Ohyama , Yasushi Shimokawa , Yoriaki Matsuzaki , Keisuke Takuma , Isamu Ghoda , Hitoshi Koshida , Ryohei Takiguchi , Hiroshi Eguchi , Komei Kafuku , Masayuki Nakamura
IPC分类号： B41M5/26 , B41M5/385 , C09B25/00 , D06P5/13 , C07D215/227
CPC分类号： B41M5/385 , C09B25/00 , Y10S428/913 , Y10S428/914
摘要： A dyestuff for heat-sensitive transfer record is here disclosed which can be represented by the formula (1) ##STR1## wherein R.sub.1 is a hydrogen atom, alkyl group having 1 to 8 carbon atoms or cycloalkyl group; R.sub.2 is a hydrogen atom, halogen atom, alkoxy group which may be substituted, alkylthio group which may be substituted or arylthio group which may be substituted; R.sub.3 is a branched alkyl group having 3 to 5 carbon atoms, O-substituted oxycarbonyl group, N-substituted aminocarbonyl group in which an N-substituted group may form a ring, or a substituted or unsubstituted heterocyclic ring having two or more atoms of one or more kinds selected from the group consisting of a nitrogen atom, oxygen atom and sulfur atom; and when R.sub.1 is a hydrogen atom, R.sub.3 is a branched alkyl group having 3 to 5 carbon atoms, or a substituted or unsubstituted heterocyclic ring having two or more atoms of one or more kinds selected from the group consisting of a nitrogen atom, oxygen atom and sulfur atom;and there are also disclosed an ink for heat-sensitive transfer record and a transfer sheet in which the above-mentioned dyestuff is used.
摘要翻译：这里公开了用于热敏转印记录的染料，其可以由式（1）表示：其中R 1是氢原子，具有1至8个碳原子的烷基或环烷基; R2是氢原子，卤素原子，可被取代的烷氧基，可被取代的烷硫基或可被取代的芳硫基; R3是碳原子数3〜5的支链烷基，O-取代氧羰基，N-取代基可以形成环的N-取代氨基羰基，或具有2个以上原子的取代或未取代的杂环或更多种选自氮原子，氧原子和硫原子的基团; 当R 1为氢原子时，R 3为碳原子数3〜5的支链烷基，或具有2个以上原子的取代或未取代的杂环，选自氮原子，氧原子和硫原子; 并且还公开了一种用于热敏转印记录的油墨和其中使用上述染料的转印纸。

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