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61. 发明申请

US20080197350A1 Thin film transistor and method of forming the same 有权
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US20080197350A1
公开(公告)日：2008-08-21
申请号：US12005395
申请日：2007-12-27
申请人： Jae-chul Park , Young-soo Park , Sun-Il Kim
发明人： Jae-chul Park , Young-soo Park , Sun-Il Kim
IPC分类号： H01L29/22 , H01L21/16
CPC分类号： H01L29/7869 , H01L29/78609
摘要： A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer.
摘要翻译：薄膜晶体管（TFT）可以包括沟道层，源电极，漏电极，保护层，栅电极和/或栅极绝缘层。沟道层可以包括氧化物半导体材料。源电极和漏电极可以在沟道层上彼此面对。保护层可以在源极和漏极之下，和/或可以覆盖沟道层。栅电极可以被配置为向沟道层施加电场。栅极绝缘层可以插入在栅电极和沟道层之间。

62. 发明申请

US20110141100A1 Thin film transistor and method of forming the same 有权
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US20110141100A1
公开(公告)日：2011-06-16
申请号：US12929818
申请日：2011-02-17
申请人： Jae-chul Park , Young-soo Park , Sun-Il Kim
发明人： Jae-chul Park , Young-soo Park , Sun-Il Kim
IPC分类号： G06F3/038 , H01L29/22 , H01L21/383
CPC分类号： H01L29/7869 , H01L29/78609
摘要： A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on the channel layer. The protective layer may be under the source electrode and the drain electrode and/or may cover the channel layer. The gate electrode may be configured to apply an electric field to the channel layer. The gate insulating layer may be interposed between the gate electrode and the channel layer.
摘要翻译：薄膜晶体管（TFT）可以包括沟道层，源电极，漏电极，保护层，栅电极和/或栅极绝缘层。沟道层可以包括氧化物半导体材料。源电极和漏电极可以在沟道层上彼此面对。保护层可以在源极和漏极之下，和/或可以覆盖沟道层。栅电极可以被配置为向沟道层施加电场。栅极绝缘层可以插入在栅电极和沟道层之间。

63. 发明授权

US07935964B2 Oxide semiconductors and thin film transistors comprising the same 有权
标题翻译：氧化物半导体和包括其的薄膜晶体管
公开(公告)号：US07935964B2
公开(公告)日：2011-05-03
申请号：US12213327
申请日：2008-06-18
申请人： Chang-jung Kim , Eun-ha Lee , Young-soo Park , Jae-chul Park
发明人： Chang-jung Kim , Eun-ha Lee , Young-soo Park , Jae-chul Park
IPC分类号： H01L29/10
CPC分类号： H01L29/7869
摘要： Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of Hf and Cr atoms added thereto.
摘要翻译：提供包括其的氧化物半导体和薄膜晶体管（TFT）。氧化物半导体包括Zn原子和添加了Hf原子和Cr原子中的至少一种。薄膜晶体管（TFT）包括包括包含Zn原子和添加有Hf原子和Cr原子中的至少一种的氧化物半导体的沟道。

64. 发明授权

US09224769B2 Pixel device, and radiation detecting module and apparatus having the same 有权
标题翻译：像素装置，以及具有该像素装置的放射线检测模块和装置
公开(公告)号：US09224769B2
公开(公告)日：2015-12-29
申请号：US13433985
申请日：2012-03-29
申请人： Jae-chul Park , Young Kim , Chang-jung Kim
发明人： Jae-chul Park , Young Kim , Chang-jung Kim
IPC分类号： G01T1/20 , H01L27/146 , H04N5/369 , G01T1/208 , A61B6/03
CPC分类号： H01L27/14609 , A61B6/037 , G01T1/2006 , G01T1/2018 , G01T1/208 , H01L27/14618 , H01L27/14663 , H01L2924/0002 , H04N5/3698 , H01L2924/00
摘要： A pixel device having an improved energy resolution includes at least one photodiode and at least one voltage supply unit for applying a voltage to the photodiode. The pixel device includes a voltage storage unit and a voltage adjusting unit. In a precharge mode, the voltage storage unit stores a first anode voltage. In a sensing mode, the voltage adjusting unit adjusts a second anode voltage of the anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit.
摘要翻译：具有改善的能量分辨率的像素装置包括至少一个光电二极管和用于向光电二极管施加电压的至少一个电压供应单元。像素装置包括电压存储单元和电压调节单元。在预充电模式中，电压存储单元存储第一阳极电压。在感测模式中，电压调节单元将光电二极管的阳极的第二阳极电压调整为与存储在电压存储单元中的第一阳极电压相同。

65. 发明申请

US20120318989A1 PIXEL DEVICE, AND RADIATION DETECTING MODULE AND APPARATUS HAVING THE SAME 有权
标题翻译：像素装置和辐射检测模块以及具有该装置的装置
公开(公告)号：US20120318989A1
公开(公告)日：2012-12-20
申请号：US13433985
申请日：2012-03-29
申请人： Jae-chul Park , Young Kim , Chang-jung Kim
发明人： Jae-chul Park , Young Kim , Chang-jung Kim
IPC分类号： G01T1/20 , H01L27/146 , H01L31/00
CPC分类号： H01L27/14609 , A61B6/037 , G01T1/2006 , G01T1/2018 , G01T1/208 , H01L27/14618 , H01L27/14663 , H01L2924/0002 , H04N5/3698 , H01L2924/00
摘要： A pixel device having an improved energy resolution includes at least one photodiode and at least one voltage supply unit for applying a voltage to the photodiode. The pixel device includes a voltage storage unit and a voltage adjusting unit. In a precharge mode, the voltage storage unit stores a first anode voltage. In a sensing mode, the voltage adjusting unit adjusts a second anode voltage of the anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit.
摘要翻译：具有改善的能量分辨率的像素装置包括至少一个光电二极管和用于向光电二极管施加电压的至少一个电压供应单元。像素装置包括电压存储单元和电压调节单元。在预充电模式中，电压存储单元存储第一阳极电压。在感测模式中，电压调节单元将光电二极管的阳极的第二阳极电压调整为与存储在电压存储单元中的第一阳极电压相同。

66. 发明申请

US20120295399A1 OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME 审中-公开
标题翻译：基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
公开(公告)号：US20120295399A1
公开(公告)日：2012-11-22
申请号：US13559959
申请日：2012-07-27
申请人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
发明人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
IPC分类号： H01L21/336 , C09K13/06 , C09K13/08 , H01L21/36
CPC分类号： C09K13/06 , H01L21/467 , H01L29/7869
摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
摘要翻译：提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触渠道的各边。锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

67. 发明申请

US20080315193A1 Oxide-based thin film transistor, method of fabricating the same, zinc oxide etchant, and a method of forming the same 审中-公开
标题翻译：基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
公开(公告)号：US20080315193A1
公开(公告)日：2008-12-25
申请号：US12149409
申请日：2008-05-01
申请人： Chang-jung Kim , Young-soo Park , Eun-ha Lee , Jae-chul Park
发明人： Chang-jung Kim , Young-soo Park , Eun-ha Lee , Jae-chul Park
IPC分类号： H01L29/22 , H01L21/34 , C09K13/06 , C09K13/08
CPC分类号： C09K13/06 , H01L21/467 , H01L29/7869
摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
摘要翻译：提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触渠道的各边。锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

68. 发明授权

US09105235B2 Methods of driving active display device 有权
标题翻译：主动显示装置的驱动方法
公开(公告)号：US09105235B2
公开(公告)日：2015-08-11
申请号：US13219959
申请日：2011-08-29
申请人： Dae-woong Kwon , Byung-gook Park , Chang-jung Kim , Jae-chul Park
发明人： Dae-woong Kwon , Byung-gook Park , Chang-jung Kim , Jae-chul Park
IPC分类号： G09G3/30 , G09G3/32
CPC分类号： G09G3/3233 , G09G2300/0842 , G09G2310/0251
摘要： A method of driving an active display device. The method including recovering a threshold voltage of a switching transistor connected to a pixel. The recovering including applying a negative bias voltage to the switching transistor prior to charging each pixel during a charging period. The negative bias voltage is applied to a drain of the switching transistor.
摘要翻译：一种驱动有源显示装置的方法。该方法包括恢复连接到像素的开关晶体管的阈值电压。该恢复包括在充电期间对每个像素充电之前向开关晶体管施加负偏置电压。负偏压施加到开关晶体管的漏极。

69. 发明授权

US09086494B2 Image sensor and X-ray image sensing module including the same 有权
标题翻译：图像传感器和X射线摄像模块包括相同的
公开(公告)号：US09086494B2
公开(公告)日：2015-07-21
申请号：US13597726
申请日：2012-08-29
申请人： Sang-wook Han , Hyun-Sik Kim , Gyu-Hyeong Cho , Chang-jung Kim , Jae-chul Park , Young-Hun Sung , Young Kim , Jun-Hyeok Yang
发明人： Sang-wook Han , Hyun-Sik Kim , Gyu-Hyeong Cho , Chang-jung Kim , Jae-chul Park , Young-Hun Sung , Young Kim , Jun-Hyeok Yang
IPC分类号： G01T1/24 , H04N5/378 , H04N5/374
CPC分类号： G01T1/247 , G01T1/17 , H04N5/374 , H04N5/378
摘要： According to example embodiments, an image sensor includes a charge sensing amplifier configured to amplify charges sensed by a sensing unit. The charge sensing amplifier includes an input terminal, an amplification terminal, an output terminal, a first capacitor connected between the input terminal and the amplification terminal, a first switch connected between the input terminal and the amplification terminal, a second capacitor connected between the amplification terminal and the output terminal, and a second switch connected between the output terminal and a reference voltage terminal.
摘要翻译：根据示例实施例，图像传感器包括被配置为放大由感测单元感测的电荷的电荷感测放大器。电荷感测放大器包括输入端子，放大端子，输出端子，连接在输入端子和放大端子之间的第一电容器，连接在输入端子和放大端子之间的第一开关，连接在放大器之间的第二电容器端子和输出端子，以及连接在输出端子和参考电压端子之间的第二开关。

70. 发明授权

US08890138B2 Optical touch panel and method of fabricating the same 有权
标题翻译：光触摸面板及其制造方法
公开(公告)号：US08890138B2
公开(公告)日：2014-11-18
申请号：US12929301
申请日：2011-01-13
申请人： Jae-chul Park , I-hun Song , Chang-jung Kim
发明人： Jae-chul Park , I-hun Song , Chang-jung Kim
IPC分类号： H01L31/0248 , H01L27/12 , G06F3/041 , G02F1/1333 , G06F3/042 , G02F1/1368
CPC分类号： G02F1/13338 , G02F1/1368 , G06F3/0412 , G06F3/042 , H01L27/1225
摘要： An optical touch panel may be used remotely to control a large-sized display device. According to a method of fabricating the optical touch panel, an optical sensor transistor for sensing light and a switch transistor for drawing data can be formed together on the same substrate by using a relatively simple process. The optical touch panel may include an optical sensor transistor and a switch transistor. The optical sensor transistor may be configured to sense light and the switch transistor may be configured to draw data from the optical sensor transistor. The optical sensor transistor may include a light sensitive oxide semiconductor material as a channel layer. The switch transistor may include a non-light sensitive oxide semiconductor material as a channel layer.
摘要翻译：可以远程地使用光学触摸面板来控制大型显示装置。根据制造光学触摸面板的方法，可以通过使用相对简单的工艺在相同的基板上一起形成用于感测光的光学传感器晶体管和用于绘制数据的开关晶体管。光学触摸面板可以包括光学传感器晶体管和开关晶体管。光学传感器晶体管可以被配置为感测光，并且开关晶体管可以被配置为从光学传感器晶体管绘制数据。光传感器晶体管可以包括作为沟道层的光敏氧化物半导体材料。开关晶体管可以包括作为沟道层的非光敏氧化物半导体材料。

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