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61. 发明授权

US08092698B2 Methods of forming semiconductor devices formed by processes including the use of specific etchant solutions 有权
标题翻译：通过包括使用特定蚀刻剂溶液的工艺形成半导体器件的方法
公开(公告)号：US08092698B2
公开(公告)日：2012-01-10
申请号：US12199928
申请日：2008-08-28
申请人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： B44C1/22
CPC分类号： C23F1/28 , B82Y25/00 , B82Y40/00 , C23F1/16 , C23F1/26 , C23F1/44 , H01F41/308 , H01F41/34 , H01L21/32134 , H01L43/12
摘要： The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
摘要翻译：本发明提供了包括去离子水和具有羧基和羟基自由基的有机酸的蚀刻剂溶液。还公开了形成磁存储器件的方法。

62. 发明申请

US20100167200A1 (Meth)acrylate compound, photosensitive polymer, and resist composition including the same 审中-公开
标题翻译：（甲基）丙烯酸酯化合物，感光性聚合物和含有它们的抗蚀剂组合物
公开(公告)号：US20100167200A1
公开(公告)日：2010-07-01
申请号：US12654740
申请日：2009-12-30
申请人： Sang-Jun Choi , Sung-Jae Lee , Seung-Jib Choi
发明人： Sang-Jun Choi , Sung-Jae Lee , Seung-Jib Choi
IPC分类号： G03F7/004 , C07D307/12 , C07C69/608 , C08F24/00 , C08F32/08
CPC分类号： C07C69/67 , C07C2603/74 , C07D307/33 , C08F232/04 , C08F232/08 , G03F7/0397
摘要： A (meth)acrylate compound having an acid-labile ester group, a photosensitive polymer, and a resist composition including the same, the (meth)acrylate compound being represented by the following Chemical Formula 1 wherein, R1 is hydrogen or methyl, R2 and R3 are each independently a substituted or unsubstituted linear alkyl, a substituted or unsubstituted cyclic alkyl, or linked each other to form a monocyclic ring or a fused-ring, and R4 is a linear ester or cyclic ester group.
摘要翻译：具有酸不稳定酯基的（甲基）丙烯酸酯化合物，感光性聚合物和包含它们的抗蚀剂组合物，（甲基）丙烯酸酯化合物由以下化学式1表示，其中R 1是氢或甲基，R 2和 R 3各自独立地为取代或未取代的直链烷基，取代或未取代的环烷基，或彼此连接形成单环或稠环，并且R 4为直链酯或环酯基。

63. 发明申请

US20100151388A1 (Meth)acrylate compound, photosensitive polymer, and resist composition including the same 审中-公开
标题翻译：（甲基）丙烯酸酯化合物，感光性聚合物和含有它们的抗蚀剂组合物
公开(公告)号：US20100151388A1
公开(公告)日：2010-06-17
申请号：US12654135
申请日：2009-12-11
申请人： Young-Soo Yang , Seung-Jib Choi , Jun-Sunk Kim , Sang-Jun Choi
发明人： Young-Soo Yang , Seung-Jib Choi , Jun-Sunk Kim , Sang-Jun Choi
IPC分类号： G03F7/004 , C07D211/60 , C08F226/06 , C07D207/12
CPC分类号： C07D207/48 , C07D211/22 , C07D211/42 , C07D211/46 , C08F220/18 , C08F220/28 , C08F220/34 , G03F7/0397
摘要： A (meth)acrylate compound having a nitrogen-containing cyclic group, a photosensitive polymer, and a resist composition including the same, the (meth)acrylate compound being represented by the following Chemical Formula 1:
摘要翻译：具有含氮环状基团的（甲基）丙烯酸酯化合物，感光性高分子和含有它们的抗蚀剂组合物，（甲基）丙烯酸酯化合物由下列化学式1表示：

64. 发明授权

US07642042B2 Polymer, top coating layer, top coating composition and immersion lithography process using the same 有权
标题翻译：聚合物，顶涂层，顶涂层组合物和使用其的浸渍光刻工艺
公开(公告)号：US07642042B2
公开(公告)日：2010-01-05
申请号：US11585082
申请日：2006-10-24
申请人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Sang-Gyun Woo , Man-Hyoung Ryoo
IPC分类号： G03F7/11 , G03F7/30
CPC分类号： C08F222/06 , C08F8/12 , C08F8/14 , C08F216/08 , C08F216/165 , C08F230/08 , C08F2800/20 , C08F2810/50 , C08F216/18 , C08F216/20 , C08F210/14
摘要： A polymer, a top coating layer, a top coating composition and an immersion lithography process using the same are disclosed. The top coating layer polymer may include a deuterated carboxyl group having a desired acidity such that the top coating layer polymer may be insoluble with water and a photoresist, and soluble in a developer. The polymer may be included in a top coating layer and a top coating composition.
摘要翻译：公开了一种聚合物，顶涂层，顶涂层组合物和使用其的浸没光刻工艺。顶部涂层聚合物可以包括具有所需酸度的氘代羧基，使得顶部涂层聚合物可能与水和光致抗蚀剂不溶，并且可溶于显影剂。聚合物可以包括在顶部涂层和顶部涂层组合物中。

65. 发明授权

US07579283B2 Insulating layer patterning method, insulating layer formed by the insulating layer patterning method, display device having the insulating layer 有权
标题翻译：绝缘层图案化方法，通过绝缘层构图方法形成的绝缘层，具有绝缘层的显示装置
公开(公告)号：US07579283B2
公开(公告)日：2009-08-25
申请号：US11653390
申请日：2007-01-16
申请人： Sang-Jun Choi , Jung-hyun Lee , Sang-bong Bang
发明人： Sang-Jun Choi , Jung-hyun Lee , Sang-bong Bang
IPC分类号： H01L21/302
CPC分类号： H01L21/31 , H01L21/02134 , H01L21/02282 , H01L21/02345 , H01L21/3124
摘要： Provided is an insulation layer patterning method employing a flowable oxide, which does not use a photo-resist. Also, an insulation layer pattern and display devices including the insulation layer are disclosed.
摘要翻译：提供了使用不使用光致抗蚀剂的可流动氧化物的绝缘层图案化方法。此外，公开了一种绝缘层图案和包括绝缘层的显示装置。

66. 发明申请

US20080314868A1 METHODS OF FORMING SEMICONDUCTOR DEVICES FORMED BY PROCESSES INCLUDING THE USE OF SPECIFIC ETCHANT SOLUTIONS 有权
标题翻译：形成由包括使用特定溶剂解决方案的方法形成的半导体器件的方法
公开(公告)号：US20080314868A1
公开(公告)日：2008-12-25
申请号：US12199928
申请日：2008-08-28
申请人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
发明人： Yu-Kyung Kim , Chang-Ki Hong , Sang-Jun Choi , Jeong-Nam Han
IPC分类号： C23F1/00
CPC分类号： C23F1/28 , B82Y25/00 , B82Y40/00 , C23F1/16 , C23F1/26 , C23F1/44 , H01F41/308 , H01F41/34 , H01L21/32134 , H01L43/12
摘要： The present invention provides etchant solutions including deionized water and an organic acid having a carboxyl radical and a hydroxyl radical. Methods of forming magnetic memory devices are also disclosed.
摘要翻译：本发明提供了包括去离子水和具有羧基和羟基自由基的有机酸的蚀刻剂溶液。还公开了形成磁存储器件的方法。

67. 发明授权

US07468235B2 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US07468235B2
公开(公告)日：2008-12-23
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00 , G03C1/76 , G03F7/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1; 0.1≦1/(1+m+n)≦0.7; 0.3≦m/(1+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf为C1〜C5氟取代烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

68. 发明授权

US07361612B2 Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same 失效
标题翻译：包含硅的阻挡涂层组合物和使用其形成光刻胶图案的方法
公开(公告)号：US07361612B2
公开(公告)日：2008-04-22
申请号：US11447932
申请日：2006-06-07
申请人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
发明人： Sang-Jun Choi , Mitsuhiro Hata , Han-Ku Cho
IPC分类号： H01L21/469
CPC分类号： G03F7/11 , G03F7/0758 , G03F7/2041
摘要： Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers exhibit a weight average molecular weight (Mw) of 5,000 to 200,000 daltons and may be generally represented by formula I: wherein the expressions (1+m+n)=1; 0.1≦(1/(1+m+n))≦0.7; 0.3≦(m/(1+m+n))≦0.9; and 0.0≦(n/(1+m+n))≦0.6 are satisfied; R1, R2 and R3 are C1 to C5 alkyl, C1 to C5 alkoxy and hydroxyl groups; and Z represents an alkene that includes at least one hydrophilic group. Barrier coating compositions will include an organic solvent or solvent system selected from C3 to C10 alcohol-based organic solvents, C4 to C12 alkane-based organic solvents and mixtures thereof.
摘要翻译：提供本发明的示例性实施方案，其包括适用于结合到阻挡组合物中的聚合物结构的范围，用于例如浸渍光刻法与合适的溶剂或溶剂体系的组合。这些聚合物的重均分子量（Mw）为5000〜200,000道尔顿，通常可以由式I表示：式（1 + m + n）= 1; 0.1 <=（1 /（1 + m + n））<= 0.7; 0.3 <=（m /（1 + m + n））<= 0.9; 并且满足0.0 <=（n /（1 + m + n））<= 0.6; R 1，R 2和R 3均为C 1至C 5烷基 C 1 -C 5烷氧基和羟基; Z表示包含至少一个亲水基团的烯烃。阻挡涂层组合物将包括选自C 3〜C 10醇基有机溶剂，C 4〜C 6烷基的有机溶剂或溶剂体系，基于烷烃的有机溶剂及其混合物。

69. 发明申请

US20070048671A1 Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions 失效
标题翻译：包含氟的阻挡涂层组合物和使用这种组合物形成光刻胶图案的方法
公开(公告)号：US20070048671A1
公开(公告)日：2007-03-01
申请号：US11447907
申请日：2006-06-07
申请人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
发明人： Mitsuhiro Hata , Sang-Jun Choi , Man-Hyoung Ryoo
IPC分类号： G03C5/00
CPC分类号： G03F7/2041 , G03F7/11 , Y10S430/115
摘要： Provided are a barrier coating composition and a method of forming photoresist pattern by an immersion photolithography process using the same. The barrier coating composition includes a polymer corresponding to formula I having a weight average molecular weight (Mw) of 5,000 to 100,000 daltons and an organic solvent, wherein the expressions 1+m+n=1;0.1≦1/(l+m+n)≦0.7; 0.3≦m/(l+m+n)≦0.9; and 0.0≦n/(1+m+n)≦0.6 are satisfied; Rf is a C1 to C5 fluorine-substituted hydrocarbon group; and Z, if present, includes at least one hydrophilic group. Compositions according to the invention may be used to form barrier layers on photoresist layers to suppress dissolution of photoresist components during immersion photolithography while allowing the barrier layer to be removed by alkaline developing solutions.
摘要翻译：提供了一种阻挡涂层组合物和通过使用其的浸没光刻工艺形成光致抗蚀剂图案的方法。阻挡涂层组合物包括对应于重均分子量（Mw）为5,000至100,000道尔顿的式I的聚合物和有机溶剂，其中表达式1 + m + n = 1; 0.1 <= 1 /（1 + m + n）<= 0.7; 0.3 <= m /（1 + m + n）<= 0.9; 并且满足0.0 <= n /（1 + m + n）<= 0.6; Rf是C 5 -C 5氟取代的烃基; 和Z如果存在，包括至少一个亲水基团。根据本发明的组合物可用于在光致抗蚀剂层上形成阻挡层，以抑制浸没光刻期间光致抗蚀剂组分的溶解，同时允许通过碱性显影溶液除去阻挡层。

70. 发明申请

US20070037068A1 Barrier coating compositions for photoresist and methods of forming photoresist patterns using the same 审中-公开
标题翻译：用于光致抗蚀剂的阻挡涂层组合物和使用其形成光致抗蚀剂图案的方法
公开(公告)号：US20070037068A1
公开(公告)日：2007-02-15
申请号：US11447896
申请日：2006-06-07
申请人： Sang-Jun Choi , Mitsuhiro Hata
发明人： Sang-Jun Choi , Mitsuhiro Hata
IPC分类号： G03F1/00
CPC分类号： G03F7/11 , G03F7/0752 , G03F7/2041
摘要： Provided are barrier polymers, barrier coating compositions incorporating such polymers and methods for utilizing such barrier coating compositions for suppressing dissolution of photoresist components during immersion photolithography. The barrier polymers may be synthesized from one or more monomers including at least one monomer having a tris(trimethylsiloxy)silyl group and will have a weight average molecular weight (Mw) of 5,000 to 200,000 daltons. The barrier polymer(s) may be combined with one or more organic solvents to form a barrier coating composition that can be applied to a photoresist layer to form a barrier coating layer sufficient to suppress dissolution of components such as PAG into an immersion liquid during exposure processing. The tris(trimethylsiloxy)silyl group monomer(s) may be combined with other monomers, particularly monomers including a polar group, for modifying the hydrophobicity and/or solubility of the resulting barrier coating layer in, for example, a developing solution.
摘要翻译：提供了阻挡聚合物，并入这种聚合物的阻挡涂层组合物以及利用这种阻挡涂层组合物在浸没光刻期间抑制光致抗蚀剂组分溶解的方法。阻挡聚合物可以由一种或多种包含至少一种具有三（三甲基甲硅烷氧基）甲硅烷基的单体的单体合成，并且具有5,000至200,000道尔顿的重均分子量（Mw）。阻隔聚合物可以与一种或多种有机溶剂组合以形成阻隔涂层组合物，其可以施加到光致抗蚀剂层上以形成足以在暴露期间抑制诸如PAG的组分溶解到浸没液体中的溶解的阻隔涂层处理。三（三甲基甲硅烷氧基）甲硅烷基单体可以与其它单体，特别是包括极性基团的单体组合，用于改变所形成的阻挡涂层在例如显影溶液中的疏水性和/或溶解性。

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