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    • 62. 发明申请
    • POWER CONVERTER
    • 电源转换器
    • US20110221375A1
    • 2011-09-15
    • US13042683
    • 2011-03-08
    • Takashi SUZUKI
    • Takashi SUZUKI
    • H02P23/00
    • H02M7/53875B62D5/046H02M1/15H02M2001/008H02P6/16H02P27/08
    • In a power converter, a voltage command signal shifting part shifts a first duty command signal such that a first duty center value related to a voltage applied to a first set of windings is shifted downwards than an output center value of a possible duty range. The voltage command signal shifting part also shifts a second duty command signal such that a second duty center value related to a voltage applied to a second set of windings is shifted upwards than the output center value. First and second shift amounts of the first and second duty center values from the output center value are varied depending on amplitude. Accordingly, ripple current of a capacitor can be decreased, and a difference in heat loss between switching elements can be minimized.
    • 在功率转换器中,电压指令信号移位部分移位第一占空指令信号,使得与施加到第一组绕组的电压相关的第一占空中心值比可能的占空范围的输出中心值向下移位。 电压指令信号移位部分还移位第二占空指令信号,使得与施加到第二组绕组的电压相关的第二占空中心值比输出中心值向上移位。 来自输出中心值的第一和第二占空中心值的第一和第二移位量根据振幅而变化。 因此,可以减小电容器的纹波电流,并且可以使开关元件之间的热损失差最小化。
    • 64. 发明申请
    • LIGHT DETECTING APPARATUS
    • 光检测装置
    • US20110073980A1
    • 2011-03-31
    • US12888739
    • 2010-09-23
    • Takashi SUZUKI
    • Takashi SUZUKI
    • H01L31/0224
    • H01L31/022408H01L31/103H03F3/087
    • A light detecting apparatus is provided with a semiconductor substrate, a first electrode layer, and a second electrode layer. The semiconductor substrate has a first conductivity type first semiconductor region, and a second conductivity type second semiconductor region formed on the first semiconductor region and constituting a photodiode based on a pn junction formed between the first semiconductor region and the second semiconductor region. The first electrode layer is arranged above the second semiconductor region so as to be opposed to the second semiconductor region and is electrically connected to the second semiconductor region. The second electrode layer is arranged above the first electrode layer so as to be opposed to the first electrode layer and forms a capacitance component connected to the photodiode, between the first electrode layer and the second electrode layer.
    • 光检测装置设置有半导体衬底,第一电极层和第二电极层。 半导体衬底具有第一导电类型的第一半导体区域和形成在第一半导体区域上的第二导电类型的第二半导体区域,并且基于形成在第一半导体区域和第二半导体区域之间的pn结构成光电二极管。 第一电极层布置在第二半导体区域的上方以与第二半导体区域相对并且电连接到第二半导体区域。 第二电极层设置在第一电极层的上方,以与第一电极层相对,并且在第一电极层和第二电极层之间形成连接到光电二极管的电容分量。
    • 66. 发明申请
    • INFORMATION PROCESSING DEVICE AND LOAD ARBITRATION CONTROL METHOD
    • 信息处理装置和负载仲裁控制方法
    • US20100095304A1
    • 2010-04-15
    • US12635801
    • 2009-12-11
    • Takashi SUZUKIToshio Yoshida
    • Takashi SUZUKIToshio Yoshida
    • G06F9/46
    • G06F9/3851
    • The information processing device in the simultaneous multi-threading system is operated in an inter-thread performance load arbitration control method, and includes: an instruction input control unit for sharing among threads control of inputting an instruction in an arithmetic unit for acquiring the instruction from memory and performing an operation on the basis of the instruction; a commit stack entry provided for each thread for holding information obtained by decoding the instruction; an instruction completion order control unit for updating the memory and a general purpose register depending on an arithmetic result obtained by the arithmetic unit in an order of the instructions input from the instruction input control unit; and a performance load balance analysis unit for detecting the information registered in the commit stack entry and controlling the instruction input control unit.
    • 同时多线程系统中的信息处理装置以线程间性能负载仲裁控制方式进行操作,包括:指令输入控制单元,用于在线程之间共享输入用于获取指令的算术单元中的指令的控制 存储器并基于该指令执行操作; 为每个线程提供的用于保存通过解码指令而获得的信息的提交栈条目; 指令完成顺序控制单元,用于根据从指令输入控制单元输入的指令的顺序,根据运算单元获得的运算结果来更新存储器和通用寄存器; 以及性能负载平衡分析单元,用于检测在提交堆栈条目中登记的信息并控制指令输入控制单元。