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61. 发明申请

US20090101935A1 NITRIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体及其制造方法
公开(公告)号：US20090101935A1
公开(公告)日：2009-04-23
申请号：US12250767
申请日：2008-10-14
申请人： Hideto Sugawara
发明人： Hideto Sugawara
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L21/02639 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L33/0075 , H01L33/16 , H01S5/3202 , H01S5/3203 , H01S2304/12
摘要： A nitride semiconductor includes: a substrate having a major surface including a first crystal polarity surface and a second crystal polarity surface different from the first crystal polarity surface; and a single polarity layer provided above the major surface and having a single crystal polarity.
摘要翻译：氮化物半导体包括：具有包括第一晶体极性表面和与第一晶体极性表面不同的第二晶体极性表面的主表面的基板; 以及设置在主表面上并具有单晶极性的单极性层。

62. 发明授权

US07179671B2 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element 有权
标题翻译：发光元件及其制造方法以及具有发光元件的半导体器件
公开(公告)号：US07179671B2
公开(公告)日：2007-02-20
申请号：US10945707
申请日：2004-09-21
申请人： Haruhiko Okazaki , Hideto Sugawara
发明人： Haruhiko Okazaki , Hideto Sugawara
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L24/73 , H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/12041 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： A method of manufacturing an LED forms an InGaN active layer on a substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes a nickel layer for forming an ohmic contact with a p-GaN layer, a molybdenum having a barrier function of preventing diffusion of impurities, an aluminum layer as a high-reflection electrode, a titanium layer having a barrier function, and a gold layer for improving the contact with a submount on a lead frame. Forming a p-side electrode with this five-layered structure realizes an ohmic contact and high reflectance at the same time.
摘要翻译：制造LED的方法在衬底上形成InGaN有源层。在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括用于与p-GaN层形成欧姆接触的镍层，具有防止杂质扩散的阻挡功能的钼，作为高反射电极的铝层，具有阻挡功能的钛层，以及用于改善与引线框架上的基座的接触的金层。形成具有该五层结构的p侧电极同时实现欧姆接触和高反射率。

63. 发明申请

US20060220044A1 Gallium nitride based semiconductor device and method of manufacturing same 有权
标题翻译：氮化镓基半导体器件及其制造方法
公开(公告)号：US20060220044A1
公开(公告)日：2006-10-05
申请号：US11396922
申请日：2006-04-04
申请人： Hideto Sugawara , Chie Hongo
发明人： Hideto Sugawara , Chie Hongo
IPC分类号： H01L33/00
CPC分类号： H01L29/7371 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L29/2003 , H01L29/207 , H01L29/36 , H01L29/66318 , H01L29/66462 , H01L33/025 , H01L33/305 , H01S5/22 , H01S5/32341
摘要： A gallium nitride based semiconductor device comprises: a first gallium nitride based semiconductor film doped with magnesium; and a second gallium nitride based semiconductor film provided on the first gallium nitride based semiconductor film and doped with magnesium. The first gallium nitride based semiconductor film has substantially flat distributions of magnesium concentration and hydrogen atom concentration, and the magnesium concentration is higher than the hydrogen atom concentration. The second gallium nitride based semiconductor film has a first region in which the magnesium concentration decreases and the hydrogen atom concentration increases toward the surface, and the magnesium concentration in the first region is higher than the hydrogen atom concentration in the first region and higher than the magnesium concentration in the first gallium nitride based semiconductor film.
摘要翻译：氮化镓基半导体器件包括：掺杂有镁的第一氮化镓基半导体膜; 以及设置在第一氮化镓基半导体膜上并掺杂有镁的第二氮化镓基半导体膜。第一氮化镓基半导体膜具有镁浓度和氢原子浓度基本平坦的分布，并且镁浓度高于氢原子浓度。第二氮化镓系半导体膜具有其中镁浓度降低并且氢原子浓度朝向表面增加的第一区域，并且第一区域中的镁浓度高于第一区域中的氢原子浓度，并且高于第一氮化镓基半导体膜中的镁浓度。

64. 发明申请

US20050056857A1 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element 审中-公开
标题翻译：发光元件及其制造方法以及具有发光元件的半导体器件
公开(公告)号：US20050056857A1
公开(公告)日：2005-03-17
申请号：US10958910
申请日：2004-10-04
申请人： Haruhiko Okazaki , Hideto Sugawara
发明人： Haruhiko Okazaki , Hideto Sugawara
IPC分类号： H01L21/28 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L24/73 , H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/12041 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.
摘要翻译：在蓝宝石衬底上形成InGaN有源层。在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆形（1个用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有防止杂质扩散的阻挡功能的Mo层，{圆周（3个 Al层作为高反射电极{圆形（4个具有阻挡功能的Ti层）和{圆上（5个Au层，用于改善与引线框架上的基座的接触），具有该反射电极的p侧电极五层结构同时实现欧姆接触和高反射率。

65. 发明申请

US20050051786A1 Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element 有权
公开(公告)号：US20050051786A1
公开(公告)日：2005-03-10
申请号：US10946787
申请日：2004-09-22
申请人： Haruhiko Okazaki , Hideto Sugawara
发明人： Haruhiko Okazaki , Hideto Sugawara
IPC分类号： H01L21/28 , H01L33/06 , H01L33/10 , H01L33/32 , H01L33/40 , H01L29/22
CPC分类号： H01L33/40 , H01L24/73 , H01L33/32 , H01L33/405 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/01019 , H01L2924/12041 , H01L2924/3025 , H01L2924/00012 , H01L2924/00 , H01L2224/45099
摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

66. 发明授权

US06627521B2 Semiconductor light emitting element and manufacturing method thereof 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06627521B2
公开(公告)日：2003-09-30
申请号：US10281852
申请日：2002-10-28
申请人： Chisato Furukawa , Hideto Sugawara , Nobuhiro Suzuki
发明人： Chisato Furukawa , Hideto Sugawara , Nobuhiro Suzuki
IPC分类号： H01L2120
CPC分类号： H01L33/32 , H01L33/007 , H01L33/08 , H01L33/501 , H01L33/508 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
摘要： There is disclosed a semiconductor light emitting element formed by selective growth and being high in light emitting efficiency, in which at least one GaN-based layer grown by ELO is stacked/formed on a sapphire substrate, and a fluorescent substance for converting an ultraviolet light to a visible light is contained in a selective growth mask material layer for use in this case. Since this fluorescent substance converts the ultraviolet light to the visible light, a binding efficiency of the ultraviolet light to the fluorescent substance is enhanced in either one of a center light emitting type and UV light emitting type of light emitting elements. By further containing the fluorescent substance into a passivation film, the efficiency is further enhanced.
摘要翻译：公开了通过选择性生长和发光效率高而形成的半导体发光元件，其中至少一个由ELO生长的GaN基层堆叠/形成在蓝宝石衬底上，以及用于转换紫外线的荧光物质在这种情况下使用的选择性生长掩模材料层中包含可见光。由于该荧光物质将紫外光转换成可见光，因此在中心发光型和紫外线发光型发光元件中的任意一种中增加紫外线对荧光物质的结合效率。通过进一步将荧光物质包含在钝化膜中，效率进一步提高。

67. 发明授权

US06399963B2 Semiconductor light emitting element and its manufacturing method 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06399963B2
公开(公告)日：2002-06-04
申请号：US09800642
申请日：2001-03-06
申请人： Hideto Sugawara , Masayuki Ishikawa
发明人： Hideto Sugawara , Masayuki Ishikawa
IPC分类号： H01L3300
CPC分类号： H01L33/007 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01S5/32341
摘要： When a plurality of semiconductor layers including a nitride compound layer containing indium are stacked on a substrate, materials of layers above the indium containing nitride compound layer are limited to specific compounds, or their growth temperatures are limited within a predetermined range, to suppress thermal deterioration of the nitride compound layer containing indium or deterioration of the interface and to thereby grow a high-quality semiconductor light emitting element using nitride compound semiconductors. When manufacturing a nitride compound semiconductor light emitting element having a first layer made of a first nitride compound semiconductor containing indium and a second layer stacked on the first layer, conditions for stacking the second layer are selected those inside a closed region defined by connecting points plotted at x and y coordinates (364, 600), (364, 1010), (550, 1010), (650, 600) and (364, 600) on a graph taking emission wavelengths based on band-to-band transition of the first layer in nanometer on the x axis and taking growth temperatures of the second layer in ° C. on the y axis. Thus, a high-performance light emitting element can be made without inviting thermal deterioration of the first layer.
摘要翻译：当包含含有铟的氮化物化合物层的多个半导体层堆叠在基板上时，含铟氮化物层以上的层的材料被限制在特定化合物上，或者它们的生长温度被限制在预定范围内，以抑制热劣化的含有铟的氮化物化合物层或界面的劣化，从而使用氮化物半导体生长高品质的半导体发光元件。当制造具有由包含铟的第一氮化物化合物半导体制成的第一层的氮化物半导体发光元件和堆叠在第一层上的第二层时，选择堆叠第二层的条件是在由连接点绘制的闭合区域内的条件在图形上的x和y坐标（364,600），（364,1010），（550,1010），（650,600）和（364,600）上，取图表示基于波段的带 - 带转换的发射波长在x轴上以纳米为单位的第一层，并且在y轴上以°C取第二层的生长温度。因此，可以在不引起第一层的热劣化的情况下制造高性能的发光元件。

68. 发明授权

US06191439B1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US06191439B1
公开(公告)日：2001-02-20
申请号：US09351897
申请日：1999-07-13
申请人： Hideto Sugawara
发明人： Hideto Sugawara
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/14 , H01L33/38
摘要： An object of the present invention is to provide a semiconductor light emitting device that an emission efficiency is high and it is possible to emit lights at an ultraviolet wave length. The semiconductor light emitting device according to the present invention is constituted by laminating a buffer layer, an n-GaN contact layer, a clad layer including n-AlGaN, a GaN active layer, a clad layer including p-AlGaN, and a p-GaN contact layer on a sapphire substrate. Each portion of the clad layer including n-AlGaN, the GaN active layer 5, the clad layer including p-AlGaN, and the p-GaN contact layer is eliminated by etching; as a result, the n-GaN contact layer 3 is exposed. Next, An n-side electrode for current injection is formed on the n-GaN contact layer 3. Next, an n-GaN current block layer 9 is formed on a portion of an upper face of the p-GaN contact layer 7. Next, a p-side electrode for current injection is formed on upper faces of the p-GaN contact layer and the n-GaN current block layer. The GaN active layer is set to a thickness equal to or more than 50 nm. An current injection area injected via the electrode for current injection is set equal to or less than 5×10−4 cm2.
摘要翻译：本发明的目的是提供一种发射效率高并且可以以紫外线波长发光的半导体发光器件。根据本发明的半导体发光器件通过层叠缓冲层，n-GaN接触层，包含n-AlGaN的覆盖层，GaN有源层，包括p-AlGaN的覆层和p- 蓝宝石衬底上的GaN接触层。通过蚀刻来消除包括n-AlGaN，GaN有源层5，包层p-AlGaN和p-GaN接触层的包层的每个部分。结果，露出n-GaN接触层3。接下来，在n-GaN接触层3上形成用于电流注入的n侧电极。接下来，在p-GaN接触层7的上表面的一部分上形成n-GaN电流阻挡层9。在p-GaN接触层和n-GaN电流阻挡层的上表面上形成用于电流注入的p侧电极。 GaN活性层的厚度设定为50nm以上。通过电极注入的电流注入区域设定为5×10 -4 cm 2以下。

69. 发明授权

US5981977A Nitride compound semiconductor light emitting element and its manufacturing method 失效
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：US5981977A
公开(公告)日：1999-11-09
申请号：US110834
申请日：1998-07-06
申请人： Chisato Furukawa , Hideto Sugawara , Masayuki Ishikawa , Nobuhiro Suzuki
发明人： Chisato Furukawa , Hideto Sugawara , Masayuki Ishikawa , Nobuhiro Suzuki
IPC分类号： H01L33/12 , H01L33/14 , H01L33/32 , H01L33/44 , H01S5/00 , H01S5/227 , H01S5/323 , H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01S5/227 , H01S5/2272 , H01S5/32341
摘要： A nitride compound semiconductor light emitting element comprises a substrate, a nitride compound semiconductor n-type layer, a mask layer having a predetermined opening, a nitride compound semiconductor buffer layer epitaxially grown on said n-type layer exclusively at said opening. The buffer layer has a recess on its top face so that a thickness of said buffer layer is thinner above a central portion of the opening and thicker above edge portions of the opening. A nitride compound semiconductor active layer is selectively formed on the recess of the buffer layer to be thicker at the central portion of the recess and thinner at the edges of the recess. A nitride compound semiconductor burying layer overlays the mask layer and the active layer to cover the active layer. By selectively growing the buffer layer and the active layer in the opening of the mask layer formed on the substrate and by growing additional layers to bury the entire structure and to flatten the surface, a planar-type, stripe-buried structure is realized. The active layer has a distribution of refractive index due to the distribution of thickness resulting from the selective growth and can confine light with high efficiency. Additionally, by using an insulation film, highly efficient confinement of current is realized to provide a light emitting element for a shorter wavelength with a high luminous intensity and a low oscillation threshold value.
摘要翻译：氮化物半导体发光元件包括衬底，氮化物化合物半导体n型层，具有预定开口的掩模层，仅在所述开口处在所述n型层上外延生长的氮化物化合物半导体缓冲层。缓冲层在其顶面上具有凹部，使得所述缓冲层的厚度在开口的中心部分上方更薄，并且在开口的边缘部分较厚。在缓冲层的凹部上选择性地形成氮化物化合物半导体活性层，使其在凹部的中央部较厚，在凹部的边缘处变薄。氮化物化合物半导体掩埋层覆盖掩模层和有源层以覆盖有源层。通过在衬底上形成的掩模层的开口中选择性地生长缓冲层和活性层，并且通过生长附加层以埋入整个结构并使表面变平，实现了平面型条纹埋层结构。活性层由于选择性生长导致的厚度分布而具有折射率分布，并且可以高效地限制光。此外，通过使用绝缘膜，实现电流的高效限制，以提供具有高发光强度和低振荡阈值的较短波长的发光元件。

70. 发明授权

US5410159A Light-emitting diode 失效
标题翻译：发光二极管
公开(公告)号：US5410159A
公开(公告)日：1995-04-25
申请号：US128643
申请日：1993-09-30
申请人： Hideto Sugawara , Kazuhiko Itaya
发明人： Hideto Sugawara , Kazuhiko Itaya
IPC分类号： H01L21/203 , H01L33/06 , H01L33/14 , H01L33/30 , H01L33/40 , H01S5/18 , H01S5/343 , H01L29/205 , H01L33/00 , H01S3/19
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01S5/34326 , H01S5/18
摘要： A light-emitting diode, in which light is emitted from a side opposite to a substrate, includes a compound semiconductor substrate of a first conductivity type, a lower cladding layer formed on the substrate end consisting of InGaAlP of the first conductivity type, a light-emitting layer formed on the lower cladding layer and having a quantum well structure constituted by alternately stacking barrier layers and eight or more quantum well layers, and an upper cladding layer formed on the light-emitting layer and consisting of InGaAlP of a second conductivity type.
摘要翻译：从与衬底相反的一侧发射光的发光二极管包括第一导电类型的化合物半导体衬底，形成在由第一导电类型的InGaAlP组成的衬底端上的下包层，并且具有通过交替层叠阻挡层和八个以上的量子阱层而构成的量子阱结构，以及形成在发光层上并由第二导电型的InGaAlP构成的上部包层。

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