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    • 62. 发明申请
    • Electropolishing and electroplating methods
    • 电抛光和电镀方法
    • US20060049056A1
    • 2006-03-09
    • US10510656
    • 2003-04-11
    • Hui WangJian WangPeihaur YihHuiquan Wu
    • Hui WangJian WangPeihaur YihHuiquan Wu
    • C25D7/12
    • C25D3/02C25D3/38C25D5/18C25D7/123H01L21/2885H01L21/76834H01L21/7684H01L21/76877
    • In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed regions within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.
    • 在本发明的一个方面,提供了一种用于在晶片上电镀导电膜的示例性方法。 该方法包括在金属层在第一密度的凹陷区域之上平面之前在第一电流密度范围内的具有凹陷区域和非凹陷区域的半导体结构上电镀金属膜,并且在金属之后的第二电流密度范围内进行电镀 层在凹陷区域之上是平面的。 第二电流密度范围大于第一电流密度范围。 在一个示例中,该方法还包括在第二电流密度范围内的电镀,直到金属层在第二密度的凹陷区域之上是平面的,第二密度大于第一密度,并且之后在第三电流密度范围内进行电镀。
    • 64. 发明授权
    • Open-loop for waveform acquisition
    • 用于波形采集的开环
    • US06853941B2
    • 2005-02-08
    • US10136710
    • 2002-04-30
    • Hui WangKenichi KanaiHiroyasu Koike
    • Hui WangKenichi KanaiHiroyasu Koike
    • G01R31/305G01R31/00
    • G01R31/305
    • Methods and apparatus, including computer program products, implementing and using techniques for open-loop waveform acquisition. In general, in one aspect, the invention provides a method for open-loop waveform acquisition. The method includes acquiring an S-curve of an acquisition loop of an electron-beam probe system. The S-curve represents a response of the acquisition loop to changes of potential differences between the acquisition loop and a device under test. The method includes calibrating the acquisition loop to obtain a linear region in the acquired S-curve and using the linear portion of the acquired S-curve to calculate voltage at a probe point of the device under test.
    • 方法和设备,包括计算机程序产品,实现和使用开环波形采集技术。 通常,一方面,本发明提供了一种开环波形采集方法。 该方法包括获取电子束探针系统的采集环路的S曲线。 S曲线表示采集环路对采集环路和被测器件之间的电位差的变化的响应。 该方法包括校准采集环路以获得所获得的S曲线中的线性区域,并且使用获取的S曲线的线性部分来计算被测器件的探针点处的电压。
    • 65. 发明授权
    • Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workplaces
    • 用于在工作场所的电抛光和/或电镀期间保持和定位半导体工件的方法和装置
    • US06495007B2
    • 2002-12-17
    • US09800990
    • 2001-03-07
    • Hui Wang
    • Hui Wang
    • B23H304
    • C25D17/001C25D7/123C25D17/06C25F7/00
    • A wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer for processing. The spring member is disposed on the bottom section and configured to apply an electric charge to the wafer. In accordance with another aspect of the present invention, the spring member contacts a portion of the outer perimeter of the wafer. In one alternative configuration of the present invention, the wafer chuck further includes a seal member to seal the spring member from the electrolyte solution used in the electropolishing and/or electroplating process.
    • 用于在晶片的电抛光和/或电镀期间保持晶片的晶片卡盘包括顶部部分,底部部分和弹簧部件。 根据本发明的一个方面,顶部部分和底部部分构造成接收用于处理的晶片。 弹簧构件设置在底部上并构造成向晶片施加电荷。 根据本发明的另一方面,弹簧构件接触晶片外周的一部分。 在本发明的另一种配置中,晶片卡盘还包括密封件,用于将弹簧件与用于电抛光和/或电镀工艺中的电解液密封。
    • 66. 发明授权
    • Method for electropolishing metal on semiconductor devices
    • 在半导体器件上电镀金属的方法
    • US06440295B1
    • 2002-08-27
    • US09497894
    • 2000-02-04
    • Hui Wang
    • Hui Wang
    • C25F316
    • H01L21/32115C25F3/22C25F7/00H01L21/32134H01L21/7684
    • An electropolishing apparatus for polishing a metal layer formed on a wafer (31) includes an electrolyte (34), a polishing receptacle (100), a wafer chuck (29), a fluid inlet (5, 7, 9), and at least one cathode (1, 2, 3). The wafer chuck (29) holds and positions the wafer (31) within the polishing receptacle (100). The electrolyte (34) is delivered through the fluid inlet (5, 7, 9) into the polishing receptacle (100). The cathode (1, 2, 3) then applies an electropolishing current to the electrolyte to electropolish the wafer (31). In accordance with one aspect of the present invention, discrete portions of the wafer (31) can be electropolished to enhance the uniformity of the electropolished wafer.
    • 用于抛光形成在晶片(31)上的金属层的电抛光设备包括电解质(34),抛光容器(100),晶片卡盘(29),流体入口(5,7,9) 一个阴极(1,2,3)。 晶片卡盘(29)将晶片(31)保持并定位在抛光容器(100)内。 电解质(34)通过流体入口(5,7,9)输送到抛光容器(100)中。 然后,阴极(1,2,3)将电解抛光电流施加到电解质上以对晶片(31)进行电解抛光。 根据本发明的一个方面,晶片(31)的离散部分可以被电抛光以增强电抛光晶片的均匀性。
    • 67. 发明授权
    • Methods and apparatus for electropolishing metal interconnections on semiconductor devices
    • 用于电解抛光半导体器件上的金属互连的方法和装置
    • US06395152B1
    • 2002-05-28
    • US09346699
    • 1999-07-02
    • Hui Wang
    • Hui Wang
    • C25D1700
    • H01L21/32115C25F3/22C25F7/00H01L21/32134H01L21/7684
    • An electropolishing apparatus for polishing a metal layer formed on a wafer (31) includes an electrolyte (34), a polishing receptacle (100), a wafer chuck (29), a fluid inlet (5, 7, 9), and at least one cathode (1, 2, 3). The wafer chuck (29) holds and positions the wafer (31) within the polishing receptacle (100). The electrolyte (34) is delivered through the fluid inlet (5, 7, 9) into the polishing receptacle (100). The cathode (1, 2, 3) then applies an electropolishing current to the electrolyte to electropolish the wafer (31). In accordance with one aspect of the present invention, discrete portions of the wafer (31) can be electropolished to enhance the uniformity of the electropolished wafer.
    • 用于抛光形成在晶片(31)上的金属层的电抛光设备包括电解质(34),抛光容器(100),晶片卡盘(29),流体入口(5,7,9) 一个阴极(1,2,3)。 晶片卡盘(29)将晶片(31)保持并定位在抛光容器(100)内。 电解质(34)通过流体入口(5,7,9)输送到抛光容器(100)中。 然后,阴极(1,2,3)将电解抛光电流施加到电解质以对晶片(31)进行电解抛光。 根据本发明的一个方面,晶片(31)的离散部分可以被电抛光以增强电抛光晶片的均匀性。
    • 68. 发明授权
    • Storm resistant window bracket
    • 防风窗支架
    • US06363659B1
    • 2002-04-02
    • US09448331
    • 1999-11-23
    • Hui Wang
    • Hui Wang
    • E05D1522
    • E05D15/22E05Y2900/148E06B3/44E06B3/4407E06B3/5063
    • A storm resistant device for a window that has a window frame enclosing at least one sash slidingly and pivotally mounted therein. The sash has side rails and the frame has vertical jambs that engage the side rails of the sash to raise and lower and pivot the sash. The storm resistant device comprises a first elongated bracket having a substantially Z-shaped cross section with two end segments and a middle segment connecting the two end segments. The middle segment is connectable to the side rails of the sashes with one of the end segments extending outward from the sash toward an adjacent jamb. There is a second elongated bracket having a substantially L-shaped cross section with two legs, one leg of the bracket adapted to be mounted to the jamb with a second leg of the L extending toward an adjacent side rail of the sash. The first and second brackets are mounted to the frame and sash, respectively, so that when the sash is closed, the one end segment of the first bracket interlocks with the second leg of the second bracket and prevents the sash from pivoting when pressure is applied to the sash.
    • 一种用于窗户的防风雨装置,其具有围绕至少一个窗框的窗框,其滑动地并枢转地安装在其中。 窗框具有侧轨,框架具有垂直的边框,其接合窗框的侧轨以升高和降低并枢转窗扇。 防暴装置包括具有大致Z形截面的第一细长支架,其具有两个端部段和连接两个端部段的中间段。 中间部分可连接到窗扇的侧轨,其中一个端部段从窗扇向外延伸到相邻的边框。 存在具有两个腿的基本上L形横截面的第二细长支架,支架的一个支腿适于安装到侧柱,其中L的第二支腿朝向窗扇的相邻侧轨延伸。 第一和第二支架分别安装到框架和窗框上,使得当窗框关闭时,第一支架的一端部与第二支架的第二支腿互锁,并且防止当施加压力时窗框摆动 到窗扇
    • 70. 发明授权
    • Methods and apparatus for holding and positioning semiconductor workpieces during electropolishing and/or electroplating of the workpieces
    • 用于在工件的电抛光和/或电镀期间保持和定位半导体工件的方法和装置
    • US06248222B1
    • 2001-06-19
    • US09390458
    • 1999-09-07
    • Hui Wang
    • Hui Wang
    • C25B1100
    • C25D17/001C25D7/123C25D17/06C25F7/00
    • A wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer for processing. The spring member is disposed on the bottom section and configured to apply an electric charge to the wafer. In accordance with another aspect of the present invention, the spring member contacts a portion of the outer perimeter of the wafer. In one alternative configuration of the present invention, the wafer chuck further includes a seal member to seal the spring member from the electrolyte solution used in the electropolishing and/or electroplating process.
    • 用于在晶片的电抛光和/或电镀期间保持晶片的晶片卡盘包括顶部部分,底部部分和弹簧部件。 根据本发明的一个方面,顶部部分和底部部分构造成接收用于处理的晶片。 弹簧构件设置在底部上并构造成向晶片施加电荷。 根据本发明的另一方面,弹簧构件接触晶片外周的一部分。 在本发明的另一种配置中,晶片卡盘还包括密封件,用于将弹簧件与用于电抛光和/或电镀工艺中的电解液密封。