专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20130001717A1 PERPENDICULAR MRAM WITH MTJ INCLUDING LAMINATED MAGNETIC LAYERS 审中-公开
标题翻译：具有MTJ的全面MRAM，包括层压磁性层
公开(公告)号：US20130001717A1
公开(公告)日：2013-01-03
申请号：US13538863
申请日：2012-06-29
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang , Roger Klas Malmhall
IPC分类号： H01L29/82
CPC分类号： H01F10/3236 , H01F10/3286 , H01L43/10
摘要： Thin film perpendicular magnetic multilayer structures which can be used in various thin film magnetic structures are described. One multilayer structure embodiment is formed by interlacing a soft magnetic layer and a FePt based magnetic layer in N repeats, where N is a positive integer. Various MRAM MTJ structures are described using multilayer structure embodiments for a free layer, a reference layer, and a pinned layer according to the invention.
摘要翻译：描述了可用于各种薄膜磁性结构的薄膜垂直磁性多层结构。一个多层结构实施例通过在N个重复中交织软磁层和基于FePt的磁性层来形成，其中N是正整数。使用根据本发明的自由层，参考层和钉扎层的多层结构实施例描述了各种MRAM MTJ结构。

62. 发明申请

US20120217595A1 MAGNETIC LATCH MAGNETIC RANDOM ACCESS MEMORY (MRAM) 有权
标题翻译：磁性锁定磁条随机存取存储器（MRAM）
公开(公告)号：US20120217595A1
公开(公告)日：2012-08-30
申请号：US13289372
申请日：2011-11-04
申请人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
发明人： Yuchen Zhou , Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Roger Klas Malmhall
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L43/08 , H01L43/10
摘要： A STTMRAM element includes a magnetization layer made of a first free layer and a second free layer, separated by a non-magnetic separation layer (NMSL), with the first and second free layers each having in-plane magnetizations that act on each other through anti-parallel coupling. The direction of the magnetization of the first and second free layers each is in-plane prior to the application of electrical current to the STTMRAM element and thereafter, the direction of magnetization of the second free layer becomes substantially titled out-of-plane and the direction of magnetization of the first free layer switches. Upon electrical current being discontinued to the STTMRAM element, the direction of magnetization of the second free layer remains in a direction that is substantially opposite to that of the first free layer.
摘要翻译： STTMRAM元件包括由非磁性分离层（NMSL）隔开的由第一自由层和第二自由层制成的磁化层，第一和第二自由层各自具有彼此作用的面内磁化反平行耦合。在向STTMRAM元件施加电流之前，第一自由层和第二自由层的磁化方向各自在同一平面内，此后，第二自由层的磁化方向基本上标称为平面外，并且第一自由层开关的磁化方向。当电流停止到STTMRAM元件时，第二自由层的磁化方向保持在与第一自由层基本相反的方向上。

63. 发明申请

US20120206958A1 MAGNETIC RANDOM ACCESS MEMORY WITH FIELD COMPENSATING LAYER AND MULTI-LEVEL CELL 有权
标题翻译：磁场随机访问存储器，具有现场补偿层和多级单元
公开(公告)号：US20120206958A1
公开(公告)日：2012-08-16
申请号：US13099321
申请日：2011-05-02
申请人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
发明人： Yuchen Zhou , Yiming Huai , Rajiv Yadav Ranjan , Jing Zhang
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/161 , H01L43/02
摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.
摘要翻译：自旋转矩磁性随机存取存储器（STTMRAM）元件包括形成在基板上的参考层，具有固定的垂直磁性分量。接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。自由层的磁性取向相对于固定层的磁性取向。固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

64. 发明申请

US20120205761A1 Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability 有权
标题翻译：具有低开关电流和高热稳定性的非易失性磁存储器
公开(公告)号：US20120205761A1
公开(公告)日：2012-08-16
申请号：US13453928
申请日：2012-04-23
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y10/00 , G11C11/161 , G11C11/1675 , H01L27/228
摘要： A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.
摘要翻译：非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。

65. 发明申请

US20120146167A1 MEMORY SYSTEM HAVING THERMALLY STABLE PERPENDICULAR MAGNETO TUNNEL JUNCTION (MTJ) AND A METHOD OF MANUFACTURING SAME 审中-公开
标题翻译：具有热稳定性的磁铁隧道结（MEM）的存储系统及其制造方法
公开(公告)号：US20120146167A1
公开(公告)日：2012-06-14
申请号：US13277187
申请日：2011-10-19
申请人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
发明人： Yiming Huai , Yuchen Zhou , Jing Zhang , Roger Klas Malmhall , Ioan Tudosa , Rajiv Yadav Ranjan
IPC分类号： H01L29/82 , B05D5/12
CPC分类号： H01L43/02 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A spin-torque transfer magnetic random access memory (STTMRAM) element employed to store a state based on the magnetic orientation of a free layer, the STTMRAM element is made of a first perpendicular free layer (PFL) including a first perpendicular enhancement layer (PEL). The first PFL is formed on top of a seed layer. The STTMRAM element further includes a barrier layer formed on top of the first PFL and a second perpendicular reference layer (PRL) that has a second PEL, the second PRL is formed on top of the barrier layer. The STTMRAM element further includes a capping layer that is formed on top of the second PRL.
摘要翻译：用于存储基于自由层的磁取向的状态的自旋转矩传递磁随机存取存储器（STTMRAM）元件，STTMRAM元件由包括第一垂直增强层（PEL）的第一垂直自由层（PFL））。第一个PFL形成在种子层的顶部。 STTMRAM元件还包括形成在第一PFL的顶部上的阻挡层和具有第二PEL的第二垂直参考层（PRL），第二PRL形成在阻挡层的顶部上。 STTMRAM元件还包括形成在第二PRL的顶部上的封盖层。

66. 发明申请

US20120068236A1 NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY 有权
公开(公告)号：US20120068236A1
公开(公告)日：2012-03-22
申请号：US13305668
申请日：2011-11-28
申请人： Rajiv Yadav Ranjan , Petro Estakhri , Mahmud Assar , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Petro Estakhri , Mahmud Assar , Parviz Keshtbod
IPC分类号： H01L29/82 , H01L43/12
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L43/08
摘要： A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

67. 发明申请

US20120063218A1 SPIN-TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR MAGNETIC ANISOTROPY MULTILAYERS 有权
标题翻译：旋转转子扭矩磁性随机存取存储器，带有全息磁性多面体多层
公开(公告)号：US20120063218A1
公开(公告)日：2012-03-15
申请号：US13225338
申请日：2011-09-02
申请人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
发明人： Yiming Huai , Jing Zhang , Rajiv Yadav Ranjan , Yuchen Zhou , Roger Klas Malmhall , Ioan Tudosa
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/10 , B82Y40/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/3286 , H01F10/329 , H01F41/302 , H01L27/228 , H01L29/66984 , H01L43/02 , H01L43/08
摘要： A spin-torque transfer memory random access memory (STTMRAM) element includes a composite fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer, the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate. The composite layers are made of multiple repeats of a bi-layer unit which consists of a non-magnetic insulating layer and magnetic layer with thicknesses adjusted in a range that makes the magnetization have a preferred direction perpendicular to film plane.
摘要翻译：自旋转矩传递存储器随机存取存储器（STTMRAM）元件包括形成在衬底上的复合固定层和形成在固定层上的隧道层和形成在隧道势垒层上的复合自由层，每个的复合自由层和固定层基本上垂直于衬底的平面。复合层由双层单元的多个重复构成，该双层单元由非磁性绝缘层和厚度调整在使得磁化具有垂直于膜平面的优选方向的范围内的磁性层组成。

68. 发明授权

US08120949B2 Low-cost non-volatile flash-RAM memory 有权
标题翻译：低成本的非易失性闪存 - RAM内存
公开(公告)号：US08120949B2
公开(公告)日：2012-02-21
申请号：US12182996
申请日：2008-07-30
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Mahmud Assar
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Mahmud Assar
IPC分类号： G11C11/14
CPC分类号： G06F12/0246 , G11C11/15 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C14/00 , H01L27/105 , H01L27/224
摘要： A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die.
摘要翻译：闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器，易失性RAM驻留在单片模具上。

69. 发明申请

US20120026785A1 Non-Volatile Magnetic Memory Element with Graded Layer 有权
公开(公告)号：US20120026785A1
公开(公告)日：2012-02-02
申请号：US13253918
申请日：2011-10-05
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod , Roger Klas Malmhall
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F41/303 , H01L27/228 , H01L43/08
摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

70. 发明申请

US20080191251A1 Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability 有权
标题翻译：具有低开关电流和高热稳定性的非易失性磁存储器
公开(公告)号：US20080191251A1
公开(公告)日：2008-08-14
申请号：US11739648
申请日：2007-04-24
申请人： Rajiv Yadav Ranjan , Parviz Keshtbod
发明人： Rajiv Yadav Ranjan , Parviz Keshtbod
IPC分类号： G11C11/22 , H01L43/12
CPC分类号： H01L43/10 , B82Y10/00 , G11C11/161 , G11C11/1675 , H01L27/228
摘要： One embodiment of the present invention includes a an embodiment of the present invention includes a non-volatile current-switching magnetic memory element including a bottom electrode; a pinning layer formed on top of the bottom electrode; a fixed layer formed on top of the pinning layer; a tunnel layer formed on top of the pinning layer; a first free layer formed on top of the tunnel layer; a granular film layer formed on top of the free layer; a second free layer formed on top of the granular film layer; a cap layer formed on top of the second layer; and a top electrode formed on top of the cap layer.
摘要翻译：本发明的一个实施例包括本发明的一个实施例，其包括一个包括底部电极的非易失性电流切换磁存储元件; 形成在底部电极顶部的钉扎层; 形成在钉扎层顶部的固定层; 形成在钉扎层之上的隧道层; 形成在隧道层顶部的第一自由层; 形成在自由层顶部的粒状膜层; 形成在所述粒状膜层顶部的第二自由层; 盖层，形成在第二层的顶部; 以及形成在盖层顶部上的顶部电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式