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    • 67. 发明申请
    • Optimizing real-time rendering of texture mapped object models relative to adjustable distortion thresholds
    • 优化纹理映射对象模型相对于可调失真阈值的实时渲染
    • US20050280648A1
    • 2005-12-22
    • US10990244
    • 2004-11-15
    • Xi WangXin TongStephen LinBaining GuoHeung-Yeung Shum
    • Xi WangXin TongStephen LinBaining GuoHeung-Yeung Shum
    • G06T15/20G06T15/50G06T15/60G06T17/00G09G5/00
    • G06T15/04
    • A “mesostructure renderer” uses pre-computed multi-dimensional “generalized displacement maps” (GDM) to provide real-time rendering of general non-height-field mesostructures on both open and closed surfaces of arbitrary geometry. In general, the GDM represents the distance to solid mesostructure along any ray cast from any point within a volumetric sample. Given the pre-computed GDM, the mesostructure renderer then computes mesostructure visibility jointly in object space and texture space, thereby enabling both control of texture distortion and efficient computation of texture coordinates and shadowing. Further, in one embodiment, the mesostructure renderer uses the GDM to render mesostructures with either local or global illumination as a per-pixel process using conventional computer graphics hardware to accelerate the real-time rendering of the mesostructures. Further acceleration of mesostructure rendering is achieved in another embodiment by automatically reducing the number of triangles in the rendering pipeline according to a user-specified threshold for acceptable texture distortion.
    • “mesostructure渲染器”使用预先计算的多维“广义位移图”(GDM),以便在任意几何的开放和闭合表面上提供一般非高度场介观结构的实时渲染。 一般来说,GDM表示沿着体积样品内的任何点的任何射线投射到固体介观结构的距离。 给定预先计算的GDM,然后,介观结构渲染器在对象空间和纹理空间中联合计算介观结构可见度,从而实现纹理失真的控制和纹理坐标和阴影的有效计算。 此外,在一个实施例中,使用传统计算机图形硬件的介面结构渲染器使用GDM来渲染具有局部或全局照明的介观结构作为每像素处理,以加速介观结构的实时渲染。 在另一个实施例中,通过根据用户指定的可接受纹理失真的阈值自动减少渲染流水线中的三角形数量来实现进一步加速的介观结构渲染。
    • 70. 发明授权
    • Method for determining BSIMSOI4 DC model parameters
    • 确定BSIMSOI4 DC模型参数的方法
    • US09134361B2
    • 2015-09-15
    • US13696455
    • 2011-09-25
    • Jing ChenQingqing WuJiexin LuoZhan ChaiXi Wang
    • Jing ChenQingqing WuJiexin LuoZhan ChaiXi Wang
    • G06F7/60G01R31/26G06F17/50
    • G01R31/2628G01R31/2603G06F17/5036
    • The present invention provides a method for determining BSIMSOI4 Direct Current (DC) model parameters, where a plurality of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices of a body leading-out structure and of different sizes, and a plurality of MOSFET devices of a floating structure and of different sizes are provided; Id-Vg-Vp, Id/Ip-Vd-Vg, Ig-Vg-Vd, Ig-Vp, Ip-Vg-vd, Is/Id-Vp, and Id/Ip-Vp-Vd properties of all the MOSFET devices of a body leading-out structure, and Id-Vg-Vp, Id-Vd-Vg, and Ig-Vg-Vd properties of all the MOSFET devices of a floating structure are measured; electrical property curves without a self-heating effect of each MOSFET device of a body leading-out structure and each MOSFET device of a floating structure are obtained; and then DC parameters of a BSIMSOI4 model are successively extracted according to specific steps. In the present invention, proper test curves are successively selected according to model equations, and various kinds of parameters are successively determined, thereby accurately and effectively extracting the DC parameters of the BSIMSOI4 model.
    • 本发明提供了一种用于确定BSIMSOI4直流(DC)模型参数的方法,其中,体内引出结构和不同尺寸的多个金属氧化物半导体场效应晶体管(MOSFET)器件和多个MOSFET器件 提供浮动结构和不同尺寸; 所有MOSFET器件的Id-Vg-Vp,Id / Ip-Vd-Vg,Ig-Vg-Vd,Ig-Vp,Ip-Vg-vd,Is / Id-Vp和Id / Ip-Vp-Vd特性 测量浮体结构的所有MOSFET器件的体导体结构和Id-Vg-Vp,Id-Vd-Vg和Ig-Vg-Vd特性; 获得不具有体引出结构的每个MOSFET器件和浮置结构的每个MOSFET器件的自发热效应的电性能曲线; 然后根据具体步骤依次提取BSIMSOI4模型的DC参数。 在本发明中,根据模型方程依次选择适当的试验曲线,并连续确定各种参数,从而准确有效地提取BSIMSOI4型号的直流参数。