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    • 61. 发明申请
    • Light-emitting semiconductor device using group III nitrogen compound
    • 使用III族氮化合物的发光半导体器件
    • US20080173880A1
    • 2008-07-24
    • US12003173
    • 2007-12-20
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • H01L33/00H01L21/00
    • H01L33/32H01L33/0025H01L33/007H01L33/325H01L33/38H01L33/382H01L33/385H01L33/40
    • A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
    • 发光半导体器件(10)连续地包括蓝宝石衬底(1),AlN缓冲层(2),高载体的硅(Si)掺杂GaN n + +层(3) (n型)浓度,Si掺杂(Al x3 Ga 1-x 3)y 3在1-y 3中, 具有高载流子(n型)浓度的氮(Zn)和Si掺杂(Al 2 x 2 Ga 2) 1-x2 Y2在1-y2 N发射层(5)中,以及Mg掺杂(Al x1 Ga) 在1-y1 N p层(6)中。 AlN层(2)的厚度为500埃。 GaN n + +(3)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层(4)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层(5)的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极(7,8)分别连接到p层(6)和n + +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 选择各层(4,5,6)中的Al,Ga和In的组成比以满足n +层(3)中的GaN的晶格常数。 LED(10)被设计为提高发光强度并获得更纯的蓝色。
    • 67. 发明申请
    • Light-emitting semiconductor device using group III nitrogen compound
    • 使用III族氮化合物的发光半导体器件
    • US20060118821A1
    • 2006-06-08
    • US11328079
    • 2006-01-10
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • H01L31/109
    • H01L33/32H01L33/0025H01L33/007H01L33/325H01L33/38H01L33/382H01L33/385H01L33/40
    • A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
    • 发光半导体器件(10)连续地包括蓝宝石衬底(1),AlN缓冲层(2),高载体的硅(Si)掺杂GaN n + +层(3) (n型)浓度,Si掺杂(Al x3 Ga 1-x 3)y 3在1-y 3中, 具有高载流子(n型)浓度的氮(Zn)和Si掺杂(Al 2 x 2 Ga 2) 1-x2 Y2在1-y2 N发射层(5)中,以及Mg掺杂(Al x1 Ga) 在1-y1 N p层(6)中。 AlN层(2)的厚度为500埃。 GaN n + +层(3)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层(4)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层(5)的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极(7,8)分别连接到p层(6)和n + +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 选择各层(4,5,6)中的Al,Ga和In的组成比以满足n +层(3)中的GaN的晶格常数。 LED(10)被设计为提高发光强度并获得更纯的蓝色。
    • 68. 发明申请
    • LIght-emitting semiconductor device using group III nitrogen compound
    • 使用III族氮化合物的发光半导体器件
    • US20050224834A1
    • 2005-10-13
    • US11143664
    • 2005-06-03
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • Katsuhide ManabeHisaki KatoMichinari SassaShiro YamazakiMakoto AsaiNaoki ShibataMasayoshi Koike
    • H01L33/00H01L33/32H01L33/38H01L33/40
    • H01L33/32H01L33/0025H01L33/007H01L33/325H01L33/38H01L33/382H01L33/385H01L33/40
    • A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
    • 发光半导体器件(10)连续地包括蓝宝石衬底(1),AlN缓冲层(2),高载体的硅(Si)掺杂GaN n + +层(3) (n型)浓度,Si掺杂(Al x3 Ga 1-x 3)y 3在1-y 3中, 具有高载流子(n型)浓度的氮(Zn)和Si掺杂(Al 2 x 2 Ga 2) 1-x2 Y2在1-y2 N发射层(5)中,以及Mg掺杂(Al x1 Ga) 在1-y1 N p层(6)中。 AlN层(2)的厚度为500埃。 GaN n + +(3)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层(4)具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层(5)的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极(7,8)分别连接到p层(6)和n + +层(4)。 一个凹槽(9)使电极(7,8)电绝缘。 选择各层(4,5,6)中的Al,Ga和In的组成比以满足n +层(3)中的GaN的晶格常数。 LED(10)被设计为提高发光强度并获得更纯的蓝色。